Abstract: A mask pattern for semiconductor device fabrication comprises a resist pattern formed on a semiconductor substrate, and an interpolymer complex film formd on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.

Abstract: A polymer, a top coating layer, a top coating composition and an immersion lithography process using the same are disclosed. The top coating layer polymer may include a deuterated carboxyl group having a desired acidity such that the top coating layer polymer may be insoluble with water and a photoresist, and soluble in a developer. The polymer may be included in a top coating layer and a top coating composition.

Abstract: A coating composition for forming etch mask patterns may include a polymer and an organic solvent. The polymer may have an aromatic ring substituted by a vinyl ether functional group. The polymer may be, for example, a Novolak resin partially substituted by a vinyl ether functional group or poly(hydroxystyrene) partially substituted by a vinyl ether functional group.

Abstract: Provided are a barrier coating composition and a method of forming photoresist pattern by an immersion photolithography process using the same. The barrier coating composition includes a polymer corresponding to formula I having a weight average molecular weight (Mw) of 5,000 to 100,000 daltons and an organic solvent, wherein the expressions 1+m+n=1;0.1?1/(l+m+n)?0.7; 0.3?m/(l+m+n)?0.9; and 0.0?n/(1+m+n)?0.6 are satisfied; Rf is a C1 to C5 fluorine-substituted hydrocarbon group; and Z, if present, includes at least one hydrophilic group. Compositions according to the invention may be used to form barrier layers on photoresist layers to suppress dissolution of photoresist components during immersion photolithography while allowing the barrier layer to be removed by alkaline developing solutions.

Abstract: Provided are example embodiments of the invention including a range of polymer structures suitable for incorporation in barrier compositions for use, for example, in immersion photolithography in combination with a suitable solvent or solvent system. These polymers exhibit a weight average molecular weight (Mw) of 5,000 to 200,000 daltons and may be generally represented by formula I: wherein the expressions (1+m+n)=1; 0.1?(1/(1+m+n))?0.7; 0.3?(m/(1+m+n))?0.9; and 0.0?(n/(1+m+n))?0.6 are satisfied; R1, R2 and R3 are C1 to C5 alkyl, C1 to C5 alkoxy and hydroxyl groups; and Z represents an alkene that includes at least one hydrophilic group. Barrier coating compositions will include an organic solvent or solvent system selected from C3 to C10 alcohol-based organic solvents, C4 to C12 alkane-based organic solvents and mixtures thereof.

Abstract: Provided are barrier polymers, barrier coating compositions incorporating such polymers and methods for utilizing such barrier coating compositions for suppressing dissolution of photoresist components during immersion photolithography. The barrier polymers may be synthesized from one or more monomers including at least one monomer having a tris(trimethylsiloxy)silyl group and will have a weight average molecular weight (Mw) of 5,000 to 200,000 daltons. The barrier polymer(s) may be combined with one or more organic solvents to form a barrier coating composition that can be applied to a photoresist layer to form a barrier coating layer sufficient to suppress dissolution of components such as PAG into an immersion liquid during exposure processing. The tris(trimethylsiloxy)silyl group monomer(s) may be combined with other monomers, particularly monomers including a polar group, for modifying the hydrophobicity and/or solubility of the resulting barrier coating layer in, for example, a developing solution.

Abstract: Provided are a top coating composition for a photoresist which can be used in immersion lithography, and a method of forming a photoresist pattern using the same. The top coating composition includes: a polymer including at least three different structural repeating units including a first repeating unit comprising a carboxy group substituted by an alkyl protecting group or an acid-labile group, a second repeating unit comprising an acid group, and a third repeating unit comprising a polar group, and an organic solvent comprising an alcohol.

Abstract: The present invention provides a double photolithography method in which, after a first photoresist pattern including a crosslinkable agent is formed on a semiconductor substrate, a crosslinkage is formed in a molecular structure of the first photoresist pattern. A second photoresist film may be formed on a surface of the semiconductor substrate on which the crosslinked first photoresist patterns are formed. Second photoresist patterns may be formed by exposing, post-exposure baking, and developing the second photoresist film.

Abstract: In one aspect, a bottom layer resist polymer has an expanded p-electron conjugation system based on a monomer unit having a 3,3?-diindenyl structure. The bottom layer resist polymer of this aspect is composed of a repeat unit having the 3,3?-diindenyl structure represented by the following formula: where l, m and n are respective mole fractions of monomer units of the polymer, where l+m+n=1, where l=0.1 to 0.9, m=0.1 to 0.9, and n=0 to 0.8, where each of k1 and k2 is independently 0 or 1, and each of R1, R2, R3 and R4 is independently a hydrogen atom or an unsaturated hydrocarbon, and where Z is a monomer unit including a bisphenol derivative.

Abstract: Top coating compositions capable of being used in immersion lithography, and methods of forming photoresist patterns using the same, are provided. The top coating composition includes: a polymer, a base; and a solvent, wherein the polymer may be represented by Formula I: wherein R1 and R2 are independently selected from the group consisting of hydrogen, fluoro, methyl, and trifluoromethyl; X is a carboxylic acid group or a sulfonic acid group; Y is a carboxylic acid group or a sulfonic acid group, wherein the carboxylic acid group or sulfonic acid group is protected; Z is a monomer selected from the group consisting of a vinyl monomer, an alkyleneglycol, a maleic anhydride, an ethyleneimine, an oxazoline-containing monomer, acrylonitrile, an allylamide, a 3,4-dihydropyran, a 2,3-dihydrofuran, tetrafluoroethylene, or a combination thereof; and m, n, and q are integers wherein 0.03?m/(m+n+q)?0.97, 0.03?n/(m+n+q)?0.97, 0?q/(m+n+q)?0.5; and wherein the solvent includes deionized water.

Abstract: Methods of forming an integrated circuit device may include forming a resist pattern on a layer of an integrated circuit device with portions of the layer being exposed through openings of the resist pattern. An organic-inorganic hybrid siloxane network film may be formed on the resist pattern. Portions of the layer exposed through the resist pattern and the organic-inorganic hybrid siloxane network film may then be removed. Related structures are also discussed.

Abstract: Mask patterns include a resist pattern and a gel layer on a surface of the resist pattern having a junction including hydrogen bonds between a proton donor polymer and a proton acceptor polymer. Methods of forming the mask patterns and methods of fabricating a semiconductor device using the mask patterns as etching masks are also provided.

Abstract: Provided are a mask pattern including a self-assembled molecular layer, a method of forming the same, and a method of fabricating a semiconductor device. The mask pattern includes a resist pattern formed on a semiconductor substrate and the self-assembled molecular layer formed on at least a sidewall of the resist pattern. To form the mask pattern, first, the resist pattern is formed with openings on an underlayer covering the substrate to expose the underlayer to a first width. Then, the self-assembled molecular layer is selectively formed on a surface of the resist pattern to expose the underlayer to a second width smaller than the first width. The underlayer is etched using the resist pattern and the self-assembled molecular layer as an etching mask to obtain a fine pattern.

Abstract: A mask pattern for semiconductor device fabrication comprises a resist pattern formed on a semiconductor substrate, and an interpolymer complex film formd on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.