Patents by Inventor Mitsuhiro Horikawa
Mitsuhiro Horikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9281357Abstract: A method for forming a capacitor stack includes forming a first bottom electrode layer including a conductive metal nitride material. A second bottom electrode layer is formed above the first bottom electrode layer. The second bottom electrode layer includes a conductive metal oxide material, wherein the crystal structure of the conductive metal oxide material promotes a desired high-k crystal phase of a subsequently deposited dielectric layer. A dielectric layer is formed above the second bottom electrode layer. Optionally, an oxygen-rich metal oxide layer is formed above the dielectric layer. Optionally, a third top electrode layer is formed above the oxygen-rich metal oxide layer. The third top electrode layer includes a conductive metal oxide material. A fourth top electrode layer is formed above the third top electrode layer. The fourth top electrode layer includes a conductive metal nitride material.Type: GrantFiled: January 19, 2015Date of Patent: March 8, 2016Assignees: Intermolecular, Inc., Elpida Memory, Inc.Inventors: Hanhong Chen, David Chi, Imran Hashim, Mitsuhiro Horikawa, Sandra G. Malhotra
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Publication number: 20150137315Abstract: A method for forming a capacitor stack includes forming a first bottom electrode layer including a conductive metal nitride material. A second bottom electrode layer is formed above the first bottom electrode layer. The second bottom electrode layer includes a conductive metal oxide material, wherein the crystal structure of the conductive metal oxide material promotes a desired high-k crystal phase of a subsequently deposited dielectric layer. A dielectric layer is formed above the second bottom electrode layer. Optionally, an oxygen-rich metal oxide layer is formed above the dielectric layer. Optionally, a third top electrode layer is formed above the oxygen-rich metal oxide layer. The third top electrode layer includes a conductive metal oxide material. A fourth top electrode layer is formed above the third top electrode layer. The fourth top electrode layer includes a conductive metal nitride material.Type: ApplicationFiled: January 19, 2015Publication date: May 21, 2015Inventors: Hanhong Chen, David Chi, Imran Hashim, Mitsuhiro Horikawa, Sandra G. Malhotra
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Publication number: 20150087130Abstract: A method for forming a capacitor stack includes forming a first bottom electrode layer including a conductive metal nitride material. A second bottom electrode layer is formed above the first bottom electrode layer. The second bottom electrode layer includes a conductive metal oxide material, wherein the crystal structure of the conductive metal oxide material promotes a desired high-k crystal phase of a subsequently deposited dielectric layer. A dielectric layer is formed above the second bottom electrode layer. Optionally, an oxygen-rich metal oxide layer is formed above the dielectric layer. Optionally, a third top electrode layer is formed above the oxygen-rich metal oxide layer. The third top electrode layer includes a conductive metal oxide material. A fourth top electrode layer is formed above the third top electrode layer. The fourth top electrode layer includes a conductive metal nitride material.Type: ApplicationFiled: September 20, 2013Publication date: March 26, 2015Applicants: Elpida Memory, Inc, Intermolecular, Inc.Inventors: Hanhong Chen, David Chi, Imran Hashim, Mitsuhiro Horikawa, Sandra G. Malhotra
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Patent number: 8969169Abstract: A method for forming a capacitor stack includes forming a first bottom electrode layer including a conductive metal nitride material. A second bottom electrode layer is formed above the first bottom electrode layer. The second bottom electrode layer includes a conductive metal oxide material, wherein the crystal structure of the conductive metal oxide material promotes a desired high-k crystal phase of a subsequently deposited dielectric layer. A dielectric layer is formed above the second bottom electrode layer. Optionally, an oxygen-rich metal oxide layer is formed above the dielectric layer. Optionally, a third top electrode layer is formed above the oxygen-rich metal oxide layer. The third top electrode layer includes a conductive metal oxide material. A fourth top electrode layer is formed above the third top electrode layer. The fourth top electrode layer includes a conductive metal nitride material.Type: GrantFiled: September 20, 2013Date of Patent: March 3, 2015Assignee: Intermolecular, Inc.Inventors: Hanhong Chen, David Chi, Imran Hashim, Mitsuhiro Horikawa, Sandra G. Malhotra
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Patent number: 8815695Abstract: A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive base layer and conductive metal oxide layer. A second electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the second electrode layer contains a conductive base layer and conductive metal oxide layer. In some embodiments, both the first electrode layer and the second electrode layer contain a conductive base layer and conductive metal oxide layer.Type: GrantFiled: December 27, 2012Date of Patent: August 26, 2014Assignees: Intermolecular, Inc., Elpida Memory, Inc.Inventors: Xiangxin Rui, Mitsuhiro Horikawa, Hiroyuki Ode, Karthik Ramani
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Publication number: 20140183696Abstract: A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive base layer and conductive metal oxide layer. A second electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the second electrode layer contains a conductive base layer and conductive metal oxide layer. In some embodiments, both the first electrode layer and the second electrode layer contain a conductive base layer and conductive metal oxide layer.Type: ApplicationFiled: January 9, 2013Publication date: July 3, 2014Applicant: INTERMOLECULAR INC.Inventors: Xiangxin Rui, Mitsuhiro Horikawa, Hiroyuki Ode, Karthik Ramani
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Publication number: 20140187015Abstract: A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive base layer and conductive metal oxide layer. A second electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the second electrode layer contains a conductive base layer and conductive metal oxide layer. In some embodiments, both the first electrode layer and the second electrode layer contain a conductive base layer and conductive metal oxide layer.Type: ApplicationFiled: December 27, 2012Publication date: July 3, 2014Applicants: ELPIDA MEMORY, INC, INTERMOLECULAR, INC.Inventors: Xiangxin Rui, Mitsuhiro Horikawa, Hiroyuki Ode, Karthik Ramani
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Patent number: 8748325Abstract: A polyimide film is effectively formed on a complicated surface. The polyimide film is formed by reacting, on the surface, diamine monomer and tetracarboxylic acid dianhydride monomer both of which are dissolved within carbon dioxide in a supercritical states, together with a polyamic acid resulting from a reaction between the diamine monomer and the tetracarboxylic acid dianhydride reached to the surface.Type: GrantFiled: March 1, 2013Date of Patent: June 10, 2014Inventors: Mitsuhiro Horikawa, Hiroyuki Ode, Masashi Haruki, Shigeki Takishima, Shinichi Kihara
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Publication number: 20140038424Abstract: A polyimide film is effectively formed on a complicated surface. The polyimide film is formed by reacting, on the surface, diamine monomer and tetracarboxylic acid dianhydride monomer both of which are dissolved within carbon dioxide in a supercritical states, together with a polyamic acid resulting from a reaction between the diamine monomer and the tetracarboxylic acid dianhydride reached to the surface.Type: ApplicationFiled: March 1, 2013Publication date: February 6, 2014Applicant: ELPIDA MEMORY, INC.Inventors: Mitsuhiro HORIKAWA, Hiroyuki ODE, Masashi HARUKI, Shigeki TAKISHIMA, Shinichi KIHARA
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Patent number: 8546236Abstract: A method for fabricating a DRAM capacitor stack is described wherein the dielectric material is a multi-layer stack formed from a highly-doped material combined with a lightly or non-doped material. The highly-doped material remains amorphous with a crystalline content of less than 30% after an annealing step. The lightly or non-doped material becomes crystalline with a crystalline content of equal to or greater than 30% after an annealing step. The dielectric multi-layer stack maintains a high k-value while minimizing the leakage current and the EOT value.Type: GrantFiled: January 10, 2013Date of Patent: October 1, 2013Assignee: Intermolecular, Inc.Inventors: Sandra G. Malhotra, Hanhong Chen, Wim Deweerd, Mitsuhiro Horikawa, Kenichi Koyanagi, Hiroyuki Ode, Xiangxin Rui
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Patent number: 8541283Abstract: A method for fabricating a DRAM capacitor stack is described wherein the dielectric material is a multi-layer stack formed from a highly-doped material combined with a lightly or non-doped material. The highly-doped material remains amorphous with a crystalline content of less than 30% after an annealing step. The lightly or non-doped material becomes crystalline with a crystalline content of equal to or greater than 30% after an annealing step. The dielectric multi-layer stack maintains a high k-value while minimizing the leakage current and the EOT value.Type: GrantFiled: March 14, 2013Date of Patent: September 24, 2013Assignees: Intermolecular, Inc., Elpida Memory, Inc.Inventors: Sandra G. Malhotra, Hanhong Chen, Wim Y. Deweerd, Mitsuhiro Horikawa, Kenichi Koyanagi, Hiroyuki Ode, Xiangxin Rui
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Patent number: 8476141Abstract: A method for fabricating a DRAM capacitor stack is described wherein the dielectric material is a multi-layer stack formed from a highly-doped material combined with a lightly or non-doped material. The highly-doped material remains amorphous with a crystalline content of less than 30% after an annealing step. The lightly or non-doped material becomes crystalline with a crystalline content of equal to or greater than 30% after an annealing step. The dielectric multi-layer stack maintains a high k-value while minimizing the leakage current and the EOT value.Type: GrantFiled: January 9, 2013Date of Patent: July 2, 2013Assignees: Intermolecular, Inc., Elpida Memory, Inc.Inventors: Sandra Malhotra, Hanhong Chen, Wim Deweerd, Mitsuhiro Horikawa, Kenichi Koyanagi, Hiroyuki Ode, Xiangxin Rui
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Patent number: 8415227Abstract: A method for fabricating a DRAM capacitor stack is described wherein the dielectric material is a multi-layer stack formed from a highly-doped material combined with a lightly or non-doped material. The highly-doped material remains amorphous with a crystalline content of less than 30% after an annealing step. The lightly or non-doped material becomes crystalline with a crystalline content of equal to or greater than 30% after an annealing step. The dielectric multi-layer stack maintains a high k-value while minimizing the leakage current and the EOT value.Type: GrantFiled: August 29, 2011Date of Patent: April 9, 2013Assignees: Intermolecular, Inc., Elpida Memory, Inc.Inventors: Sandra Malhotra, Wim Deweerd, Hanhong Chen, Xiangxin Rui, Hiroyuki Ode, Mitsuhiro Horikawa, Kenichi Koyanagi
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Publication number: 20130052792Abstract: A method for fabricating a DRAM capacitor stack is described wherein the dielectric material is a multi-layer stack formed from a highly-doped material combined with a lightly or non-doped material. The highly-doped material remains amorphous with a crystalline content of less than 30% after an annealing step. The lightly or non-doped material becomes crystalline with a crystalline content of equal to or greater than 30% after an annealing step. The dielectric multi-layer stack maintains a high k-value while minimizing the leakage current and the EOT value.Type: ApplicationFiled: August 29, 2011Publication date: February 28, 2013Applicants: ELPIDA MEMORY, INC., INTERMOLECULAR, INC.Inventors: Sandra Malhotra, Wim Deweerd, Hanhong Chen, Xiangxin Rui, Hiroyuki Ode, Mitsuhiro Horikawa, Kenichi Koyanagi
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Patent number: 8026184Abstract: Disclosed is a method of manufacturing a semiconductor device formed by laminating a capacitor including a bottom metal electrode, a capacitive insulating film, and an upper metal electrode. When the capacitive insulating film is formed by performing a first step of forming a first dielectric layer on the bottom metal electrode by a vapor phase film forming method using a precursor gas that contains constituent elements of a dielectric; and a second step of forming a second dielectric layer on the first dielectric layer by a vapor phase film forming method using a precursor gas that contains constituent elements of a dielectric, a film forming temperature in the first step is set so as to be lower than a film forming temperature in the second step.Type: GrantFiled: December 28, 2007Date of Patent: September 27, 2011Assignee: Elpida Memory, Inc.Inventor: Mitsuhiro Horikawa
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Patent number: 7790613Abstract: A semiconductor device includes: a semiconductor substrate; a memory cell selection transistor that is formed on the semiconductor substrate and has a source and a drain; a contact plug; a polysilicon interlayer film that is formed above the memory cell selection transistor and has a cylinder-shaped through-hole; and a storage capacity part that is formed in the through-hole and is connected to the source and the drain of the memory cell selection transistor via the contact plug, wherein a boundary between a bottom and a side wall of the through-hole has a curved surface.Type: GrantFiled: January 28, 2008Date of Patent: September 7, 2010Assignee: Elpida Memory, Inc.Inventor: Mitsuhiro Horikawa
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Publication number: 20090230510Abstract: A rutile phase can be formed even in the case of a thin film by adding nickel or cobalt to titanium dioxide in the range of 0.5 to 10 atm %, and the use of this element-added titanium dioxide film in a capacitor dielectric film results in an increase in capacitance per unit area of a DRAM memory cell and enables a high-integration DRAM to be realized at low cost.Type: ApplicationFiled: March 9, 2009Publication date: September 17, 2009Applicant: Elpida Memory, Inc.Inventors: Hiroshi Miki, Tomoko Sekiguchi, Naomi Inada, Mitsuhiro Horikawa
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Publication number: 20090152677Abstract: A semiconductor device including: a conducting plug provided in an interlayer insulating film over a semiconductor substrate; and a capacitor including a lower electrode provided over the conducting plug, the lower electrode being connected to the conducting plug, a dielectric film provided on the lower electrode, and an upper electrode provided on the dielectric film. The lower electrode includes a conducting pillar and a conducting outer layer provided over at least a circumferential side surface of the conducting pillar. The dielectric film covers at least a circumferential side surface of the lower electrode, and is contact with the conducting outer layer.Type: ApplicationFiled: November 26, 2008Publication date: June 18, 2009Applicant: Elpida Memory, Inc.Inventor: Mitsuhiro Horikawa
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Publication number: 20080210999Abstract: A semiconductor device includes: a semiconductor substrate; a memory cell selection transistor that is formed on the semiconductor substrate and has a source and a drain; a contact plug; a polysilicon interlayer film that is formed above the memory cell selection transistor and has a cylinder-shaped through-hole; and a storage capacity part that is formed in the through-hole and is connected to the source and the drain of the memory cell selection transistor via the contact plug, wherein a boundary between a bottom and a side wall of the through-hole has a curved surface.Type: ApplicationFiled: January 28, 2008Publication date: September 4, 2008Applicant: ELPIDA MEMORYInventor: Mitsuhiro HORIKAWA
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Publication number: 20080157279Abstract: Disclosed is a method of manufacturing a semiconductor device formed by laminating a capacitor including a bottom metal electrode, a capacitive insulating film, and an upper metal electrode. When the capacitive insulating film is formed by performing a first step of forming a first dielectric layer on the bottom metal electrode by a vapor phase film forming method using a precursor gas that contains constituent elements of a dielectric; and a second step of forming a second dielectric layer on the first dielectric layer by a vapor phase film forming method using a precursor gas that contains constituent elements of a dielectric, a film forming temperature in the first step is set so as to be lower than a film forming temperature in the second step.Type: ApplicationFiled: December 28, 2007Publication date: July 3, 2008Applicant: ELPIDA MEMORY, INC.Inventor: Mitsuhiro HORIKAWA