Abstract: A method according to the present invention includes forming a silicon nitride film on a lower electrode, oxidizing the silicon nitride film, and forming a dielectric film including aluminum on the oxidized silicon nitride film.

Abstract: A semiconductor device includes memory cells each having an MISFET for memory selection formed on one major surface of a semiconductor substrate and a capacitive element comprised of a lower electrode electrically connected at a bottom portion to one of a source and drain of the MISFET for memory selection via a first metal layer and an upper electrode formed on the lower electrode via a capacitive insulating film. The lower electrode has a thickness of 30 nm or greater at the bottom portion thereof. Sputtering with a high ionization ratio and high directivity, such as PCM, is adapted to the formation of the lower electrode to make only the bottom portion of a capacitor thicker.

Abstract: A semiconductor device includes memory cells each having an MISFET for memory selection formed on one major surface of a semiconductor substrate and a capacitive element comprised of a lower electrode electrically connected at a bottom portion to one of a source and drain of the MISFET for memory selection via a first metal layer and an upper electrode formed on the lower electrode via a capacitive insulating film. The lower electrode has a thickness of 30 nm or greater at the bottom portion thereof. Sputtering with a high ionization ratio and high directivity, such as PCM, is adapted to the formation of the lower electrode to make only the bottom portion of a capacitor thicker.

Abstract: A semiconductor device includes memory cells each having an MISFET for memory selection formed on one major surface of a semiconductor substrate and a capacitive element comprised of a lower electrode electrically connected at a bottom portion to one of a source and drain of the MISFET for memory selection via a first metal layer and an upper electrode formed on the lower electrode via a capacitive insulating film. The lower electrode has a thickness of 30 nm or greater at the bottom portion thereof. Sputtering with a high ionization ratio and high directivity, such as PCM, is adapted to the formation of the lower electrode to make only the bottom portion of a capacitor thicker.

Abstract: There is prepared a wafer (10) having a gettering capability such as PBS wafer having deposition of polysilicon on its back surface thereof, IG wafer containing oxygen precipitates. An element separation silicon oxide film (2) is formed on the wafer (10), and a first silicon oxide film (3) is formed on the wafer (10). Then the wafer (10) is gradually cooled to a low temperature, or the wafer (10) is cooled to a low temperature and then kept at the low temperature for a fixed time. Thereafter, the first silicon oxide film (3) is removeed from the wafer (10) and then the wafer (30) is cleaned. Thereafter, a gate silicon oxide film (4) and a gate electrode (5) are formed. Subsequently, ion implantation to form a source (6) and a drain (7) and a heat treatment to activate implanted impurities are performed to form a basic MOS transistor.

Abstract: In a method of manufacturing a semiconductor device, a first polysilicon film is formed on a surface of a semiconductor substrate for a semiconductor element to be formed thereon. Ion implantation is performed in such a manner that impurity ions are implanted into the semiconductor substrate surface through the first polysilicon film. The semiconductor substrate is heated to a first temperature after the step of performing ion implantation. Then, the semiconductor substrate is gradually cooled with a predetermined cooling rate at least from a second temperature to a third temperature while the semiconductor substrate is cooled from the first temperature. The second and third temperatures are lower than the first temperature. Subsequently, the polysilicon film is removed after the gradually cooling step.

Abstract: There is prepared a wafer (10) having a gettering capability such as PBS wafer having deposition of polysilicon on the back surface thereof, IG wafer containing oxygen precipitates therein, or the like. An element separation silicon oxide film (2) is formed on the wafer (10), and a first silicon oxide film (3) is formed on the wafer (10). Then the wafer (10) is gradually cooled to a low temperature, or the wafer (10) is cooled to a low temperature and then kept at the low temperature for a fixed time. Thereafter, the first silicon oxide film (3) is removeed from the wafer (10) and then the wafer (30) is cleaned. Thereafter, a gate silicon oxide film (4) and a gate electrode (5) are formed. Subsequently, ion implantation to form a source (6) and a drain (7) and a heat treatment to activate implanted impurities are performed to form a basic MOS transistor.

Abstract: A semiconductor substrate is provided which maintains its gettering capabilities throughout the manufacturing process of a semiconductor device and which prevents previously gettered contaminating impurities from being released again into an operating region of a semiconductor device. The semiconductor substrate includes a silicon substrate, a polysilicon layer, and a high density boron layer. The silicon substrate has a first main surface and a second main surface opposed to the first main surface, and the silicon substrate is used to form a semiconductor device at least indirectly on the first main surface. The polysilicon film is formed at least indirectly on the second main surface, and the high density boron layer is disposed between the silicon substrate and the polysilicon film. Also a ratio of a highest boron density value in the high density boron layer to a lowest boron density value in the silicon substrate is greater than or equal to approximately 100.

Abstract: On the back side of a base body, three layers of polysilicon layer are formed. These polysilicon layers contain boron. A boron concentration C.sub.B(1), C.sub.B(2) and C.sub.B(3) of the first, second and third polysilicon layers from the base body side have a relationship of C.sub.B(1) .ltoreq.C.sub.B(2) .ltoreq.C.sub.B(3). On the other hand, between the polysilicon layers, silicon oxide layers are formed respectively. Upon fabrication of a semiconductor device, at first, a gettering heat treatment is effected for the substrate under a given condition. Thus, contaminating impurity is captured at the grain boundary of polysilicon layers formed on the back side of the base body. Next, the polysilicon formed at the most back side is removed by etching. By this, contaminated impurity is removed from the semiconductor substrate.

Abstract: On the back side of a base body, three layers of polysilicon layer are formed. These polysilicon layers contain boron. A boron concentration C.sub.B(1), C.sub.B(2) and C.sub.B(3) of the first, second and third polysilicon layers from the base body side have a relationship of C.sub.B(1) .ltoreq.C.sub.B(2) .ltoreq.C.sub.B(3). On the other hand, between the polysilicon layers, silicon oxide layers are formed respectively. Upon fabrication of a semiconductor device, at first, a gettering heat treatment is effected for the substrate under a given condition. Thus, contaminating impurity is captured at the grain boundary of polysilicon layers formed on the back side of the base body. Next, the polysilicon formed at the most back side is removed by etching. By this, contaminated impurity is removed from the semiconductor substrate.

Abstract: An actuator rotatable about a support shaft rectilinearly movable along axis of a shaft and rotatably movable about the shaft includes a cylindrical magnet extending about the shaft. The cylindrical magnet has a plurality of poles in the radial direction and magnetized boundaries between poles of opposite polarity extending in a circumferential direction of the magnet and extending in an axial direction of the magnet. A plurality of yokes are provided to define magnetic poles coupled in facing relationship with the magnetic boundaries of a cylindrical magnet and having coils coupled thereto to define the magnetic poles.