Abstract: A buffering delay can be reduced and moving picture encoding in low delay is performed while deterioration of picture quality is minimized.

Abstract: There is provided a substrate processing system including an etching apparatus configured to supply a gas containing fluorocarbon to generate plasma so as to perform an etching process on a film including silicon formed on a substrate, wherein the etching process is performed by using plasma through a mask formed on the film including silicon, a film forming apparatus configured to supply a gas containing carbon so as to form a film including carbon on the etched film including silicon.

Abstract: A batch-type vertical substrate processing apparatus includes a processing chamber into which a substrate holder configured to stack and hold a plurality of target substrates in a height direction is inserted; and a plurality of flanges formed to protrude from an inner wall of the processing chamber toward an internal space of the processing chamber along a planar direction and configured to divide the interior of the processing chamber into a plurality of processing subspaces along the height direction, wherein the flanges include insertion holes through which the substrate holder is inserted, and diameters of the insertion holes are small at an upper side of the processing chamber and become gradually larger toward a lower side of the processing chamber.

Abstract: There is provided a method of forming a germanium (Ge) film on a surface of a target object, which includes: supplying an aminosilane-based gas into a processing chamber in which the target object is loaded; supplying a high-order silane-based gas of disilane or higher into the processing chamber; and supplying a Ge source gas into the processing chamber. A process temperature in supplying the Ge source gas is set to fall within a range from a temperature, at which the Ge source gas is thermally decomposed or higher, to 300 degrees C. or less.

Abstract: A management controller controls a data buffer and a flash controller, which controls I/O of data to and from flash memories, based on a search request. A data decompression engine includes a plurality of data decompression circuits for decompressing, in parallel, the compressed data transferred from the data buffer. A data search engine includes a plurality of data search circuits for searching, in parallel, data which satisfies search conditions among the respective data that were decompressed by the data decompression circuits, and transfers, to the search request source, the data obtained in the search performed by the data search circuits, wherein the flash controller reads, in parallel, a plurality of compressed data requested in the search request, and transfers the read compressed data to the data buffer, and the management controller transfers the compressed data to the data decompression engine when the compressed data is stored in the data buffer.

Abstract: There is provided a method of crystallizing amorphous silicones, which includes: forming a stacked structure of a second amorphous silicon film followed by a first amorphous silicon film on an underlay film, the second amorphous silicon film having a faster crystal growth rate than the first amorphous silicon film; and performing a crystallization treatment on the stacked structure to crystallize silicones contained in at least the second amorphous silicon film.

Abstract: A data memory device has a command transfer direct memory access (DMA) engine configured to obtain a command that is generated by an external apparatus to give a data transfer instruction from a memory of the external apparatus; obtain specifics of the instruction; store the command in a command buffer; obtain a command number that identifies the command being processed; and activate a transfer list generating DMA engine by transmitting the command number depending on the specifics of the instruction of the command. The transfer list generating DMA engine is configured to: identify, based on the command stored in the command buffer, an address in the memory to be transferred between the external apparatus and the data memory device; and activate the data transfer DMA engine by transmitting the address to the data transfer DMA engine which then transfers the data to/from the memory based on the received address.

Abstract: A video communication system having: an encoder coding input video data and outputting a video stream; and a packet processing part grouping into packets the output video stream from said encoder and outputting the same to a communication path; wherein said packet processing part generates an original data cluster consolidating a packet for each group of a prescribed number of MB processes and redundant data for correcting data errors of said original data cluster; and controls the insertion quantity of redundant data so that the combined number of bits of said original data cluster and said redundant data works out to be equal to or less than the target number of bits.

Abstract: Provided is a method of forming a silicon film in a groove formed on a surface of an object to be processed, which includes: forming a first silicon layer on the surface of the object to be processed to embed the groove; doping impurities near a surface of the first silicon layer; forming a seed layer on the doped first silicon layer; and forming a second silicon layer containing impurities on the seed layer.

Abstract: A method of vapor-diffusing impurities into a diffusion region of a target substrate to be processed using a dummy substrate is provided. The method includes loading the target substrate and the dummy substrate in a substrate loading jig, accommodating the substrate loading jig loaded with the target substrate and the dummy substrate in a processing chamber of a processing apparatus, and vapor-diffusing impurities into the diffusion region of the target substrate in the processing chamber having the accommodated substrate loading jig. The vapor-diffused impurities are boron, an outer surface of the dummy substrate includes a material having properties not allowing boron adsorption.

Abstract: A vertical heat treatment apparatus includes a plurality of gas supply pipes installed in one of left-right-half regions of a reaction vessel and configured to supply a process gas to division regions obtained by dividing a processing region; an exhaust opening formed in a wall of the reaction vessel in the other of the left-right-half regions; and a vacuum exhaust path in communication with the exhaust opening. The plurality of gas supply pipes are installed to extend from an inner wall portion of the reaction vessel at a position lower than the processing region. At least one of the gas supply pipes includes a bent portion formed by bending downward a leading end portion that is extended upward, and a plurality of gas discharge holes are formed at a downstream side from the bent portion.

Abstract: A variable wavelength optical filter module according to the present invention includes a package, a variable wavelength optical filter, and a detector. The package includes a reflection part (reflecting faces) in the inside of the package. The variable wavelength optical filter is disposed in the inside of the package and includes a first reflecting plate and a second reflecting plate facing each other, with a clearance between the first reflecting plate and the second reflecting plate being variable. The detector is disposed in the inside of the package and detects a ray of light having passed through the variable wavelength optical filter. Then, the variable wavelength optical filter and the detector are disposed on the opposite side to the reflection part (reflecting faces). The ray of the light incident into the inside of the package via the variable wavelength optical filter enters the detector via the reflection part (reflecting faces).

Abstract: A method for crystallizing a group IV semiconductor to form group IV semiconductor crystals on a process surface of a workpiece on which a process is performed, includes forming an additive-containing group IV semiconductor film on the process surface of the workpiece by supplying a group IV semiconductor precursor gas serving as a precursor of the group IV semiconductor and an additive gas which lowers a melting point of the group IV semiconductor and which includes an additive whose segregation coefficient is smaller than “1”, liquefying the additive-containing group IV semiconductor film, and solidifying the liquefied additive-containing group IV semiconductor film from the side of the process surface of the workpiece to form the group IV semiconductor crystals.

Abstract: A photoelectric conversion device that includes a work electrode, an opposed electrode, and an electrolyte-containing layer. In the work electrode, a metal oxide semiconductor layer supporting a dye is provided. The dye contains a cyanine compound that has a methine chain, an indolenine skeleton bonded with both ends of the methine chain, and anchor groups introduced to a nitrogen atom included in the indolenine skeleton. Electron injection efficiency to the metal oxide semiconductor layer is improved, and the dye is hardly exfoliated from the metal oxide semiconductor layer.

Abstract: The present disclosure provides a method for filling a trench formed on an insulating film of a workpiece. The method includes forming a first impurity-containing amorphous silicon film on a wall surface which defines the trench, forming a second amorphous silicon film on the first amorphous silicon film, and annealing the workpiece after the second amorphous silicon film is formed.

Abstract: There is provided a method of forming a silicon film on a target surface of a target object, including: performing a gas process on the target surface of the target object using an oxygen gas and a hydrogen gas; forming the silicon film on the target surface to which the gas process has been performed, wherein the performing a gas process and the forming the silicon film are performed within a single processing chamber.

Abstract: Provided is an apparatus for forming a silicon-containing thin film, the apparatus including a controller which is configured to control a process gas supplying mechanism, a heating device, and an exhauster to perform: forming a first seed layer on a base by adsorbing at least silicon included in an aminosilane-based gas on the base, using the aminosilane-based gas; forming a second seed layer on the first seed layer by depositing at least silicon included in a higher-order silane-based gas having an order that is equal to or higher than disilane, using the higher-order silane-based gas having an order that is equal to or higher than the disilane, wherein the first seed layer and the second seed layer form a dual seed layer; and forming the silicon-containing thin film on the dual seed layer.

Abstract: A method of forming a silicon film includes a first film forming process, an etching process, a doping process, and a second film forming process. In the first film forming process, a silicon film doped with impurities containing boron is formed so as to embed a groove provided on an object to be processed. In the etching process, the silicon film formed in the first film forming process is etched. In the doping process, the silicon film etched in the etching process is doped with impurities containing boron. In the second film forming process, a silicon film doped with impurities containing boron is formed so as to embed the silicon film that is doped in the doping process.

Abstract: Reduction in power consumption is not considered in the prior art documents. Provided is an encoding method for encoding image information and having: a step in which image information is input; an analysis step in which the characteristics of the input image information are analyzed; a bit depth output step in which the bit depth for video encoding is determined and output; and an encoding step in which the bit depth output in the bit depth output step is used and the input image information is encoded. The encoding method is characterized by the output bit depth being switched in the bit depth output step, on the basis of the analysis results from the analysis step.

Abstract: There is provided a method of forming a germanium (Ge) film on a surface of a target object, which includes: supplying an aminosilane-based gas into a processing chamber in which the target object is loaded; supplying a high-order silane-based gas of disilane or higher into the processing chamber; and supplying a Ge source gas into the processing chamber. A process temperature in supplying the Ge source gas is set to fall within a range from a temperature, at which the Ge source gas is thermally decomposed or higher, to 300 degrees C. or less.