Abstract: There is provided a film forming apparatus for performing a film forming process on substrates by heating the substrates while the substrates are held in a shelf shape by a substrate holder in a vertical reaction container. The film forming apparatus includes: an exhaust part configured to evacuate the reaction container; a gas supply part configured to supply a film forming gas into the reaction container; a heat insulating member provided above or below an arrangement region of the substrates to overlap with the arrangement region and configured to thermally insulate the arrangement region from an upper region above the arrangement region or a lower region below the arrangement region; and a through-hole provided in the heat insulating member at a position overlapping with central portions of the substrates to adjust a temperature distribution in a plane of each substrate held near the heat insulating member.

Abstract: Reduction in power consumption is not considered in the prior art documents. Provided is an encoding method for encoding image information and having: a step in which image information is input; an analysis step in which the characteristics of the input image information are analyzed; a bit depth output step in which the bit depth for video encoding is determined and output; and an encoding step in which the bit depth output in the bit depth output step is used and the input image information is encoded. The encoding method is characterized by the output bit depth being switched in the bit depth output step, on the basis of the analysis results from the analysis step.

Abstract: A management controller controls a data buffer and a flash controller, which controls I/O of data to and from flash memories, based on a search request. A data decompression engine includes a plurality of data decompression circuits for decompressing, in parallel, the compressed data transferred from the data buffer. A data search engine includes a plurality of data search circuits for searching, in parallel, data which satisfies search conditions among the respective data that were decompressed by the data decompression circuits, and transfers, to the search request source, the data obtained in the search performed by the data search circuits, wherein the flash controller reads, in parallel, a plurality of compressed data requested in the search request, and transfers the read compressed data to the data buffer, and the management controller transfers the compressed data to the data decompression engine when the compressed data is stored in the data buffer.

Abstract: A plasma processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) providing a substrate including a silicon-containing film and a mask formed on the film; (b) etching the silicon-containing film through the mask to the first depth, thereby forming a recess in the silicon-containing film; (c) forming a protection film at least on the mask and a side wall of the recess formed on the silicon-containing film after (a); and (d) etching the silicon containing film through the mask to a second depth, the second depth being greater than the first depth.

Abstract: A processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) etching a silicon-containing film to a first depth with a first plasma in the chamber, thereby forming a recess in the silicon-containing film; (b) forming a protection film on a side wall of the recess with a second plasma in the chamber, the protection film having a first thickness at an upper portion of the recess and a second thickness at a lower portion of the recess, the second thickness being smaller than the first thickness; and (c) etching the silicon-containing film to a second depth with the third plasma in the chamber, the second depth being greater than the first depth.

Abstract: A method for forming a boron-doped silicon germanium film on a base film in a surface of an object to be processed includes: forming a seed layer by adsorbing a chlorine-free boron-containing gas to a surface of the base film; and forming a boron-doped silicon germanium film on the surface of the base film to which the seed layer is adsorbed by using a silicon raw material gas, a germanium raw material gas, and a boron doping gas through a chemical vapor deposition method.

Abstract: There is provided a method of manufacturing a semiconductor device, which includes: forming a silicon film inside a recess formed in a surface of a workpiece by supplying a film forming gas containing silicon to the workpiece; subsequently, supplying a process gas, which includes a halogen gas for etching the silicon film and a roughness suppressing gas for suppressing roughening of a surface of the silicon film after being etched by the halogen gas, to the workpiece; etching the silicon film formed on a side wall of the recess to enlarge an opening width of the recess by applying thermal energy to the process gas and activating the process gas; and subsequently, filling silicon into the recess by supplying the film forming gas to the workpiece and depositing silicon on the silicon film remaining in the recess.

Abstract: A caulking die according to an embodiment of the present invention includes an end surface being connected to each of an upper surface and a lower surface. The end surface includes a first protruded part including a first top portion, a recessed groove, and a second protruded part including a second top portion in sequential order from the lower surface side toward the upper surface side. A length of the second top portion is larger than a length of the first top portion, and a height of the second protruded part is larger than a height of the first protruded part in a cross-sectional view perpendicular to a width direction of the end surface. A caulking tool includes the caulking die. A method for manufacturing a caulking joint uses the caulking tool.

Abstract: An information processing device having a processor and memory, and including one or more accelerators and one or more storage devices, wherein: the information processing device has one network for connecting the processor, the accelerators, and the storage devices; the storage devices have an initialization interface for accepting an initialization instruction from the processor, and an I/O issuance interface for issuing an I/O command; and the processor notifies the accelerators of the address of the initialization interface or the address of the I/O issuance interface.

Abstract: The PLD management system includes a PLD management unit that manages the usage status of each of one or more PLDs. The PLD management unit receives a PLD usage request from a request source module which is one of a plurality of processing modules sharing each of the one or more PLDs. when the PLD management unit receives the usage request, the PLD management unit performs control to prevent two or more processing modules including the request source module from utilizing the same PLD at the same time based on a current usage status of a PLD corresponding to the usage request and content of the usage request.

Abstract: There is provided a substrate processing system including an etching apparatus configured to supply a gas containing fluorocarbon to generate plasma so as to perform an etching process on a film including silicon formed on a substrate, wherein the etching process is performed by using plasma through a mask formed on the film including silicon, a film forming apparatus configured to supply a gas containing carbon so as to form a film including carbon on the etched film including silicon.

Abstract: A roller unit includes a base bracket (2) that supports a slide door, a cable holder (11) formed integrally with the base bracket (2) and that holds cable ends (112a and 113a) of cables (112 and 113), and a cable guide (40) detachably installed at the cable holder (11) and that guides the cables (112 and 113), wherein the cable guide (40) is formed to separate the cables (112 and 113) from the base bracket (2), and a load applied to the cable guide (40) by tensile forces of the cables (112 and 113) is received by the cable holder (11) and the base bracket (2).

Abstract: Provided is a heat insulation structure used for a vertical heat treatment apparatus that performs a heat treatment on a substrate. The vertical heat treatment apparatus includes: a processing container having a double tube structure including an inner tube and an outer tube closed upward, the processing container having an opening at a lower end thereof; a gas supply section and exhaust section provided on a lower side of the processing container; a lid configured to introduce or discharge the substrate into or from the opening and to open/close the opening; and a heating section provided to cover the processing container from an outside. The heat insulation structure is provided between the inner tube and the outer tube.

Abstract: There is provided a method of forming a silicon film, which includes: a film forming step of forming the silicon film on a base, the silicon film having a film thickness thicker than a desired film thickness; and an etching step of reducing the film thickness of the silicon film by supplying an etching gas containing bromine or iodine to the silicon film.

Abstract: There is provided a film forming method comprising an organic substance removal step of removing an organic substance adhering to an oxide film generated on a surface of a base by supplying a hydrogen-containing gas and an oxygen-containing gas to the base; an oxide film removal step of removing the oxide film formed on the surface of the base after the organic substance removal step; and a film forming step of forming a predetermined film on the surface of the base after the oxide film removal step.

Abstract: The disclosure provides a touch sensor unit. A conductive component is arranged between a pair of electrodes which are arranged inside an insulating tube, and the conductive component includes: a body section, which extends in a longitudinal direction of the insulating tube; and a convex section, which is arranged on an outer circumference of the body section, extends along the longitudinal direction of the body section, and sinks into the pair of electrodes. Short circuit or non-short circuit and so on of the electrodes can be detected by detecting the resistance value of the conductive component. Merely by inserting the conductive component into one end in the longitudinal direction of the electrodes, the pair of electrodes are electrically connected, and only the convex section sinks into the pair of electrodes, therefore the insertion load of the conductive component can be reduced, and the terminal treatment can be simplified.

Abstract: Disclosed is a resin modifier containing a polymer comprising a monomer unit having an epoxy group. In a 13C NMR spectrum of the polymer measured in deuterated orthodichlorobenzene to which tetramethylsilane is added, a signal X1 at a chemical shift of 69.4±0.5 ppm and a signal X2 at a chemical shift of 75.1±0.5 ppm are observed when a chemical shift of a signal attributed to tetramethylsilane is taken as 0 ppm.

Abstract: The semiconductor memory device comprises a memory element group (one or more semiconductor memory elements) and a memory controller. The memory controller comprises a processor configured to process at least a part of an I/O command from a higher-level apparatus when the part of the I/O command satisfies a predetermined condition, and one or more hardware logic circuits configured to process the entire I/O command when the I/O command does not satisfy the predetermined condition.

Abstract: A first separator that prevents a pair of electrodes from short-circuiting each other is provided on end parts of the pair of electrodes in a longitudinal direction thereof, a first molded resin part that covers the first separator is provided on an end part of an insulation tube in a longitudinal direction thereof, a part of the first separator) on one side in a direction intersecting the longitudinal direction and another part of the first separator on the other side in the direction intersecting the longitudinal direction are each exposed to outside. When the first separator is embedded in the first molded resin part through insert molding, the first separator can be supported by a lower mold and an upper mold, portions of the first separator supported by the pair of molds at this time are portions exposed to outside.

Abstract: There is provided a cleaning method of a film forming apparatus in which a process of forming a silicon film, a germanium film or a silicon germanium film on a substrate mounted on a substrate holder in a processing container is performed, comprising: etching away the silicon film, the germanium film or the silicon germanium film adhered to an interior of the processing container including the substrate holder by supplying a halogen-containing gas not containing fluorine into the processing container in a state where the substrate holder, which was stored in a dew point-controlled atmosphere after the film forming process, is accommodated in the processing container with no substrate being mounted thereon.