Abstract: A semiconductor light detecting element is provided with a silicon substrate having a semiconductor layer, and an epitaxial semiconductor layer grown on the semiconductor layer and having a lower impurity concentration than the semiconductor layer; and conductors provided on a surface of the epitaxial semiconductor layer. A photosensitive region is formed in the epitaxial semiconductor layer. Irregular asperity is formed at least in a surface opposed to the photosensitive region in the semiconductor layer. The irregular asperity is optically exposed.

Abstract: In a distance measurement device of an embodiment, a light source emits modulation light in a first charge transfer cycle, and emission of the modulation light of the light source is stopped in a second charge transfer cycle. In each of the first and second charge transfer cycles, the charges generated in a photosensitive region are distributed to a first accumulation region and a second accumulation region. A first value is obtained based on readout values corresponding to amounts of accumulated charges of the first accumulation region. A second value is obtained based on readout values corresponding to amounts of accumulated charges of the second accumulation region. A distance is calculated based on the first value and the second value.

Abstract: A distance sensor includes: a light receiving area including a first longer side and a second longer side; a photo gate electrode arranged on the light receiving area; a plurality of signal charge collection regions along the first longer side; a plurality of signal charge collection regions along the second longer side; a plurality of transfer electrodes along the first longer side provided with charge transfer signals having mutually-differing phases; a plurality of transfer electrodes along the second longer side provided with the charge transfer signals having mutually-differing phases; and a potential adjusting means positioned between the first and second longer sides and raises potential of an area extending in a direction in which the first and second longer sides extend to be higher than potential of side areas of the first and second longer sides.

Abstract: A charge generating region is arranged within a region of a polygonal pixel region excluding a corner portion thereof. A signal charge collecting region is arranged at a center portion of the pixel region on the inside of the charge generating region so as to be surrounded by the charge generating region. A photogate electrode is arranged on the charge generating region. A transfer electrode is arranged between the signal charge collecting region and the charge generating region. A semiconductor region has a portion located at the corner portion of the pixel region and the remaining portion located on the outside of the pixel region, and has a conductivity type opposite to that of the signal charge collecting region and an impurity concentration higher than that of surroundings thereof. A readout circuit is arranged in the semiconductor region.

Abstract: A photogate electrode PG has first and second sides opposed to each other. First and second semiconductor regions FD1, FD2 are arranged as spatially separated from each other on the side where the first side of the photogate electrode PG exists and along the first side. Third and fourth semiconductor regions FD3, FD4 are arranged as spatially separated from each other on the side where the second side of the photogate electrode PG exists and along the second side. First gate electrodes TX1 are provided between the photogate electrode PG and the first and third semiconductor regions FD1, FD3. Second gate electrodes TX2 are provided between the photogate electrode PG and the second and fourth semiconductor regions FD2, FD4. The first to fourth semiconductor regions FD1-FD4 are formed so as to overlap with respective p-type well regions W1-W4 and so as to be surrounded by the respective well regions W1-W4.

Abstract: In a composite sensor, an arrangement region of thermal image sensors and an arrangement region of range image sensors are arranged so as to overlap each other as seen in the mounting direction. This makes it possible to acquire thermal and range images coaxially, thereby suppressing image misalignment between the thermal and range images. In the composite sensor, a seal body formed by mounting the first and second substrates on top of each other seals a space about the thermal image sensors in a vacuum state. This can prevent the heat occurring about the range image sensors from affecting the thermal image sensor side. In addition, the substrate arranged with the thermal image sensors and the substrate arranged with the range image sensors are separate from each other, which can secure a degree of freedom in designing.

Abstract: Since the accumulation regions fd1, fd2 are connected only to a single capacitor C1, a pixel can be decreased in size to improve spatial resolution. And, charges transferred into the accumulation regions fd1, fd2 are temporarily accumulated, thereby improving a signal-noise ratio. The driving circuit DRV conducts dummy switching so that the number of switching of the first switch ?1 is equal to the number of switching of the second switch ?2 after termination of the reset period within one cycle, thus making it possible to cancel offset and obtain a more accurate range image.

Abstract: A range sensor includes a charge generating region, a signal charge collecting region, an unnecessary charge collecting region, a photogate electrode, a transfer electrode, and an unnecessary charge collecting gate electrode. Outer peripheries of the charge generating region extend to sides of a polygonal pixel region except for corner portions thereof. The signal charge collecting region is disposed at a center portion of the pixel region and inside the charge generating region so as to be surrounded by the charge generating region. The unnecessary charge collecting region is disposed in the corner portion of the pixel region and outside the charge generating region. The photogate electrode is disposed on the charge generating region. The transfer electrode is disposed between the signal charge collecting region and the charge generating region. The unnecessary charge collecting gate electrode is disposed between the unnecessary charge collecting region and the charge generating region.

Abstract: The range image sensor is a range image sensor which is provided on a semiconductor substrate with an imaging region composed of a plurality of two-dimensionally arranged units (pixel P), thereby obtaining a range image on the basis of charge quantities QL, QR output from the units. One of the units is provided with a charge generating region (region outside a transfer electrode 5) where charges are generated in response to incident light, at least two semiconductor regions 3 which are arranged spatially apart to collect charges from the charge generating region, and a transfer electrode 5 which is installed at each periphery of the semiconductor region 3, given a charge transfer signal different in phase, and surrounding the semiconductor region 3.

Abstract: A range image sensor RS is provided with an imaging region consisting of a plurality of units arranged in a two-dimensional pattern, on a semiconductor substrate 1 and obtains a range image, based on charge quantities output from the units. One unit is provided with a photosensitive region, a plurality of third semiconductor regions 9a, 9b opposed to each other with a photogate electrode PG in between in a direction in which first and second long sides L1, L2 are opposed to each other, first and second transfer electrodes TX1, TX2 provided between the plurality of third semiconductor regions 9a, 9b and the photogate electrode PG, a plurality of fourth semiconductor regions 11a, 11b arranged with the third semiconductor regions 9a, 9b in between in the direction in which the first and second long sides L1, L2 are opposed to each other, and a plurality of third transfer electrodes TX3 provided respectively between the plurality of fourth semiconductor regions 11a, 11b and the photogate electrode PG.

Abstract: A photogate electrode has a planar shape of a rectangular shape having first and second long sides opposed to each other and first and second short sides opposed to each other. First and second semiconductor regions are arranged opposite to each other with the photogate electrode in between in a direction in which the first and second long sides are opposed. Third semiconductor regions are arranged opposite to each other with the photogate electrode in between in a direction in which the first and second short sides are opposed. The third semiconductor regions make a potential on the sides of the first and second short sides higher than a potential in a region located between the first and second semiconductor regions in a region immediately below the photogate electrode.

Abstract: A range image sensor capable of improving its aperture ratio and yielding a range image with a favorable S/N ratio is provided. A range image sensor RS has an imaging region constituted by a plurality of one-dimensionally arranged units on a semiconductor substrate 1 and yields a range image according to a charge amount issued from the units.

Abstract: A signal charge collecting region is disposed inside a charge generating region so as to be surrounded by the charge generating region, and collects signal charges from the charge generating region. An unnecessary charge collecting region is disposed outside the charge generating region so as to surround the charge generating region, and collects unnecessary charges from the charge generating region. A transfer electrode is disposed between the signal charge collecting region and the charge generating region, and causes the signal charges from the charge generating region to flow into the signal charge collecting region in response to an input signal. An unnecessary charge collecting gate electrode is disposed between the unnecessary charge collecting region and the charge generating region, and causes the unnecessary charges from the charge generating region to flow into the unnecessary charge collecting region in response to an input signal.

Abstract: In a distance measurement device of an embodiment, a light source emits modulation light in a first charge transfer cycle, and emission of the modulation light of the light source is stopped in a second charge transfer cycle. In each of the first and second charge transfer cycles, the charges generated in a photosensitive region are distributed to a first accumulation region and a second accumulation region. A first value is obtained based on readout values corresponding to amounts of accumulated charges of the first accumulation region. A second value is obtained based on readout values corresponding to amounts of accumulated charges of the second accumulation region. A distance is calculated based on the first value and the second value.

Abstract: A pair of first gate electrodes IGR, IGL are provided on a semiconductor substrate 100 so that potentials ?TX1, ?TX2 between a light-sensitive area SA and a pair of first accumulation regions AR, AL alternately ramp. A pair of second gate electrodes IGR, IGL are provided on the semiconductor substrate 100 so as to control the height of first potential barriers ?BG each interposed between the first accumulation region AR, AL and a second accumulation region FDR, FDL, and increase the height of the first potential barrier ?BG to carriers as a higher output of a background light is detected by a photodetector.

Abstract: The range image sensor is a range image sensor which is provided on a semiconductor substrate with an imaging region composed of a plurality of two-dimensionally arranged units (pixel P), thereby obtaining a range image on the basis of charge quantities QL, QR output from the units. One of the units is provided with a charge generating region (region outside a transfer electrode 5) where charges are generated in response to incident light, at least two semiconductor regions 3 which are arranged spatially apart to collect charges from the charge generating region, and a transfer electrode 5 which is installed at each periphery of the semiconductor region 3, given a charge transfer signal different in phase, and surrounding the semiconductor region 3.

Abstract: Two charge quantities (Q1,Q2) are output from respective pixels P (m,n) of the back-illuminated distance measuring sensor 1 as signals d?(m,n) having the distance information. Since the respective pixels P (m,n) output signals d?(m,n) responsive to the distance to an object H as micro distance measuring sensors, a distance image of the object can be obtained as an aggregate of distance information to respective points on the object H if reflection light from the object H is imaged on the pickup area 1B. If carriers generated at a deep portion in the semiconductor in response to incidence of near-infrared light for projection are led in a potential well provided in the vicinity of the carrier-generated position opposed to the light incident surface side, high-speed and accurate distance measurement is enabled.

Abstract: A range image sensor 1 is provided with a semiconductor substrate 1A having a light incident surface 1BK and a surface 1FT opposite to the light incident surface 1BK, a photogate electrode PG, first and second gate electrodes TX1, TX2, first and second semiconductor regions FD1, FD2, and a third semiconductor region SR1. The photogate electrode PG is provided on the surface 1FT. The first and second gate electrodes TX1, TX2 are provided next to the photogate electrode PG. The first and second semiconductor regions FD1, FD2 accumulate respective charges flowing into regions immediately below the respective gate electrodes TX1, TX2. The third semiconductor region SR1 is located away from the first and second semiconductor regions FD1, FD2 and on the light incident surface 1BK side and has the conductivity type opposite to that of the first and second semiconductor regions FD1, FD2.

Abstract: The range image sensor is a range image sensor which is provided on a semiconductor substrate with an imaging region composed of a plurality of two-dimensionally arranged units (pixel P), thereby obtaining a range image on the basis of charge quantities QL, QR output from the units. One of the units is provided with a charge generating region (region outside a transfer electrode 5) where charges are generated in response to incident light, at least two semiconductor regions 3 which are arranged spatially apart to collect charges from the charge generating region, and a transfer electrode 5 which is installed at each periphery of the semiconductor region 3, given a charge transfer signal different in phase, and surrounding the semiconductor region 3.

Abstract: A range image sensor 1 is provided with a semiconductor substrate 1A having a light incident surface 1BK and a surface 1FT opposite to the light incident surface 1BK, a photogate electrode PG, first and second gate electrodes TX1, TX2, first and second semiconductor regions FD1, FD2, and a third semiconductor region SR1. The photogate electrode PG is provided on the surface 1FT. The first and second gate electrodes TX1, TX2 are provided next to the photogate electrode PG The first and second semiconductor regions FD1, FD2 accumulate respective charges flowing into regions immediately below the respective gate electrodes TX1, TX2. The third semiconductor region SR1 is located away from the first and second semiconductor regions FD1, FD2 and on the light incident surface 1BK side and has the conductivity type opposite to that of the first and second semiconductor regions FD1, FD2.