Abstract: A semiconductor device including a semiconductor layer, a plurality of electrode portions each overlapping the semiconductor layer, and an insulating film placed between the plurality of electrode portions to lie on the semiconductor layer is fabricated. The fabrication method includes the steps of: forming an oxide semiconductor layer part of which is covered with the insulating film; forming a conductive material layer to cover the oxide semiconductor layer and the insulating film; forming the plurality of electrode portions from the conductive material layer by photolithography and plasma dry etching, to expose part of the oxide semiconductor layer from the plurality of electrode portions and the insulating film; and removing the part of the oxide semiconductor layer exposed from the plurality of electrode portions and the insulating film to form the semiconductor layer.

Abstract: A method of manufacturing a thin film transistor substrate (1) includes at least the steps of: forming a gate electrode (15) on an insulating substrate (10) by using a first photomask; forming a channel protective film (21) on an oxide semiconductor layer (13) so as to cover a channel region (C) by using a second photomask; forming a source electrode (19) on the oxide semiconductor layer (13) by using a third photomask; and forming a planarizing film (18) on an interlayer insulating film (17) by using a fourth photomask.

Abstract: A semiconductor device has a planarizing layer that is made of an inorganic film, and has a recessed portion formed in a region thereof in which a conductive film is disposed. A first contact hole penetrating through at least an interlayer insulating film is formed on a first wiring layer, while a second contact hole penetrating through at least the interlayer insulating film is formed on the conductive film so as to run through the inside of the recessed portion.

Abstract: A first contact hole that passes through a planarizing film layered on a first interlayer insulating film, a second interlayer insulating film that covers the surface of the planarizing film and the inner surface of the first contact hole, a third interlayer insulating film layered on the second interlayer insulating film, and a second contact hole formed with a small inner diameter inside the first contact hole and passing through the first to the third interlayer insulating films are formed. Over the third interlayer insulating film and inside the second contact hole, a second conductive film electrically connected to a first conductive film is formed.

Abstract: A semiconductor device has a planarizing layer that is made of an inorganic film, and has a recessed portion formed in a region thereof in which a conductive film is disposed. A first contact hole penetrating through at least an interlayer insulating film is formed on a first wiring layer, while a second contact hole penetrating through at least the interlayer insulating film is formed on the conductive film so as to run through the inside of the recessed portion.

Abstract: A first contact hole that passes through a planarizing film layered on a first interlayer insulating film, a second interlayer insulating film that covers the surface of the planarizing film and the inner surface of the first contact hole, a third interlayer insulating film layered on the second interlayer insulating film, and a second contact hole formed with a small inner diameter inside the first contact hole and passing through the first to the third interlayer insulating films are formed. Over the third interlayer insulating film and inside the second contact hole, a second conductive film electrically connected to a first conductive film is formed.