Abstract: A vehicle light is provided which can form a light distribution pattern having a clear cut-off line. The vehicle light can include a semiconductor light emitting device as a light source. The semiconductor light emitting device can include a semiconductor light emitting element having a light emission surface thereof having a first end and a second end and at least one light extracting layer deposited on the light emission surface and including a wavelength conversion layer, and the light extracting layer includes an optical characteristic that can change from the first end to the second end in a direction parallel to the light emission surface so that the semiconductor light emitting device forms a luminance distribution with a maximum luminance at the first end and a minimum luminance at the second end.

Abstract: A difference of work functions in different metal thin films is suppressed without causing the increase of the manufacturing steps or the decrease of the optical performance. In a semi-transmissive reflective liquid crystal display apparatus 1 including a reflective electrode 62 and a transmissive electrode 63 in the pixel electrode 64, the surface of the reflective electrode 62 is subject to a plasma treatment, so that the work function of the reflective electrode 62 is controlled by changing by a value of 0.1 eV from the original value. Thus, it is possible to place the work function of the reflective electrode 62 within a difference of ±0.2 eV with respect to the work function of the transmissive electrode 63. As a result, a number of the manufacturing steps is not increased or no optical performance is decreased, unlike conventional liquid crystal display apparatuses.

Abstract: A light emitting device can make it hard for fluorescence emitted from each phosphor in a color conversion plate to be absorbed by other phosphor. The color conversion plate can include multiple types of phosphors, and the light from a light emitting element can be allowed to reach each of the phosphors efficiently. The color conversion plate can contain at least first and second phosphors which absorb light emitted from the light emitting element and outputs fluorescence. The color conversion plate can have multiple first regions containing the first phosphor on a light emitting element side, being arranged with a predetermined spacing therebetween, and second regions containing the second phosphor on the upper surface, being arranged with a predetermined spacing therebetween. A region where the first regions and the second regions are excluded, as viewed from a location on top of the conversion plate, contains no phosphor.

Abstract: A semiconductor light emitting device can vary color temperatures of its emission light and have a simple and small configuration. The semiconductor light emitting device can include a substrate, electrode wiring formed on the substrate, a plurality of semiconductor light emitting elements mounted on the electrode wiring, and a wavelength conversion layer surrounding the semiconductor light emitting elements. The semiconductor light emitting elements constitute a first semiconductor light emitting element group and a second semiconductor light emitting element group. The wavelength conversion layer has a thinner portion corresponding to the first group and a thicker portion corresponding to the second group and can be differentiated by a step provided on the substrate.

Abstract: A white LED light source module can have a white LED light source that includes a blue LED element and a fluorescent material in combination, and a member that can prevent the color of the fluorescent material itself from being directly observed when the light source module does not function as a light source. The white LED light source module can have a photosensor to detect external light. In a standby mode of the white LED light source module, the blue LED element can be supplied with a small driving current corresponding to the brightness of the external light detected by the photosensor, so that the white LED light source can be lit with the luminance substantially equal to the external light.

Abstract: A method is provided for preparing a polymer derivative of docetaxel provided by an ester linkage between at least one hydroxyl group of docetaxel and a carboxyl group of an aspartic acid side chain of a block copolymer containing polyethylene glycol and polyaspartic acid, which method includes a step of adjusting the ratio and/or the number of docetaxel molecules linked to the block copolymer to thereby control the release rate of docetaxel from the resultant polymer derivative of docetaxel.

Abstract: A semiconductor light emitting device can include a casing having a concave-shaped cavity with an opening, a semiconductor light emitting element installed in a bottom portion of the cavity, and a resin layer for filling an interior of the cavity. The resin layer can include a wavelength conversion material, and can be formed in a convex shape in a light radiation direction of the light emitting element. In the resin layer a layer with a high density of the wavelength conversion material can be formed near a surface of the convex shape.

Abstract: A semiconductor light emitting apparatus can be configured to reduce color variations and intensity variations with a simple configuration. The semiconductor light emitting apparatus can include a substrate having conductive members including chip mounting areas and electrode areas, a plurality of semiconductor light emitting device chips mounted in the chip mounting areas on the substrate, a reflector formed on this substrate so as to surround the semiconductor light emitting device chips, and a fluorescent material and a light diffusing material arranged distributedly inside this reflector. The semiconductor light emitting apparatus can be configured so that the semiconductor light emitting device chips emit light only from their top surfaces, and a first light transmitting resin containing the fluorescent material is applied only to the top surfaces of the semiconductor light emitting device chips.

Abstract: A pharmaceutical composition or combination drug, which contains, as active ingredients, (a) a coordination compound composed of a block copolymer represented by the following formula I or formula II and cisplatin, and (b) gemcitabine hydrochloride. In the formula I and II , R1, A, R2, R3, m and n are as defined in the description.

Abstract: The present invention provides a block copolymer for a drug conjugate which comprises a water-soluble polymer region consisting of polyethylene glycol and a polyamino acid region having a hydrazide group and a hydrophobic group in the side chain.

Abstract: The present invention provides an active targeting polymer micelle encapsulating a drug, preventing an inappropriate release of a drug which may damage a normal cell. A polymer micelle 100 includes a backbone polymer unit 10 that has a target binding site 11 and a backbone polymer unit 20 that has a drug 14 and is free from the target binding site 11, such polymer units 10 and 20 being disposed in a radial arrangement in a state where the target binding site 11 is directed outward and the drug 14 is directed inward, in which: i) when the micelle is bound to a target 40 while maintaining the radial arrangement, the micelle is taken up into a cell 50 supplying the target 40 through endocytosis, and the drug 14 is released into the cell 50 by collapse of the radial arrangement in the cell 50; and ii) when the radial arrangement collapses in blood 60 before the micelle is bound to a target 40, the unit 20 is excreted through metabolism, to thereby prevent a normal cell from being damaged by the drug 14.

Abstract: A light emitting device is provided in which fluorescence emitted from each phosphor in the color conversion plate containing multiple types of phosphors is hard to be absorbed by the other phosphor, and the light from the light emitting element is allowed to reach each of the phosphors efficiently. The color conversion plate has a sea-island structure including a sea region and an island region, and the island region contains the first phosphor and the sea region contains the second phosphor. The fluorescent wavelength of the first phosphor is longer than the fluorescent wavelength of the second phosphor. With the sea-island structure as described above, the contact area between the region containing the first phosphor and the region containing the second phosphor is reduced. The fluorescence of the second phosphor is hard to be absorbed by the first phosphor which has a longer wavelength.

Abstract: A vehicle light and a road illumination device can include a semiconductor light emitting device capable of forming a luminance distribution where the light with a maximum value can be arranged at or near a light distribution cutoff line, thereby improving its light utilization efficiency. The vehicle light can include a semiconductor light emitting device including a semiconductor light emitting element and a wavelength conversion layer having a thickness-decreased portion that is formed substantially at a center line of the semiconductor light emitting element and extending to one end thereof so that the thickness is reduced from the center portion toward the one end. A projection optical system for forming a cutoff line can be configured to project a plurality of light source images each including an image portion corresponding to the thickness-decreased portion at its upper area, and to arrange the image portions in at least one of a horizontal direction and an oblique direction.

Abstract: A light source for vehicles can include a base having a cavity formed on its upper surface, an LED chip mounted in the cavity of the base, a resin portion for sealing the LED chip in the cavity, an optical member disposed above the base and apart from the LED chip, a light shielding portion disposed on the inner surface of the optical member and which forms a cutoff suited for a light distribution pattern, and a fluorescent substance layer disposed at least in regions other than the light shielding portion on the inner surface of the optical member.

Abstract: A light emitting device is provided, including a resin which can be manufactured according to a simple process and deliver a desired scattering property. The light emitting device is manufactured according to a step for mixing two or more types of immiscible liquid materials to obtain a composition containing at least two types of materials phase-separated in a sea-island structure, and a step for arranging the composition in proximity to an LED chip, curing the composition with the sea-island structure being maintained, thereby forming an encapsulation resin. Accordingly, it is possible to form an island region which serves as a scattering center, according to a simple step of mixing materials.

Abstract: A semiconductor light emitting device can be configured to maintain high luminance and to suppress the possibility of the occurrence of wire breakage with high quality and reliability. A method for producing such a semiconductor light emitting device with a high process yield is also disclosed. The semiconductor light emitting device can include a sealing member into which a reflective filler can be mixed in such an amount (concentration) range that luminous flux with a predetermined amount can be maintained and the possibility of the occurrence of wire breakage can be lowered. Various sealing members containing a reflective filler with a plurality of concentrations within this range can be prepared in advance.

Abstract: A semiconductor light emitting device can include a casing having a concave-shaped cavity with an opening, a semiconductor light emitting element installed in a bottom portion of the cavity, and a resin layer for filling an interior of the cavity. The resin layer can include a wavelength conversion material, and can be formed in a convex shape in a light radiation direction of the light emitting element.

Abstract: A light emitting apparatus can have a front luminous intensity distribution having a sharp difference at the interface between the light emitting area and the surrounding non-light emitting area (outer environment) so as to suppress or prevent light color unevenness. The semiconductor light emitting apparatus can include a substrate, a plurality of light emitting elements each having a top surface as a light emitting surface and disposed on the substrate with a predetermined gap between the adjacent light emitting elements, bridge portions each disposed at the gap between the adjacent light emitting elements so as to connect the light emitting elements, and a wavelength conversion layer disposed over the top surfaces of the plurality of the light emitting elements and the bridge portions entirely. The wavelength conversion layer can have a decreased thickness at least around its peripheral area and gradually tapering to its end portion.

Abstract: A difference of work functions in different metal thin films is suppressed without causing the increase of the manufacturing steps or the decrease of the optical performance. In a semi-transmissive reflective liquid crystal display apparatus 1 including a reflective electrode 62 and a transmissive electrode 63 in the pixel electrode 64, the surface of the reflective electrode 62 is subject to a plasma treatment, so that the work function of the reflective electrode 62 is controlled by changing by a value of 0.1 eV from the original value. Thus, it is possible to place the work function of the reflective electrode 62 within a difference of ±0.2 eV with respect to the work function of the transmissive electrode 63. As a result, a number of the manufacturing steps is not increased or no optical performance is decreased, unlike conventional liquid crystal display apparatuses.

Abstract: The present invention provides a semi-transmissive liquid crystal display device that can suppress flicker by adjusting an optimum value of a direct-current offset voltage that is applied to offset a bias electric field generated inside liquid crystal without increasing the number of production steps, and also provides a preferable production method of the semi-transmissive liquid crystal display device. The liquid crystal display device of the present invention is a semi-transmissive liquid crystal display device including: a substrate on aback face side, including a transmissive electrode and a reflective electrode; a substrate on an observation face side, facing the substrate on the back face side; and a liquid crystal layer arranged between the substrate on the back face side and the substrate on the observation face side, wherein the reflective electrode has a molybdenum-containing surface on a side of the liquid crystal layer.