Abstract: A semiconductor device includes: a film stack including a plurality of electrode layers and a plurality of first insulating films alternately stacked on top of one another; a charge storage layer provided between a side face of the electrode layers through a second insulating film; and a semiconductor layer provided between a side face of the charge storage layer through a third insulating film. At least one of the plurality of electrode layers includes a first layer and a second layer. The first layer is a polycrystalline layer including tungsten and nitrogen. The second layer is an amorphous layer including tungsten.

Abstract: A semiconductor memory device includes a first insulating layer, a first conductive layer, a first pillar, a second pillar, and a second insulating layer. The first conductive layer contains tungsten. The first conductive layer includes a first sub conductive layer and a second sub conductive layer. The first pillar and the second pillar pass through the first insulating layer and the first conductive layer. The second insulating layer divides the first insulating layer and the first conductive layer. The first sub conductive layer is in contact with the second sub conductive layer and is provided between the second sub conductive layer and the first insulating layer. A fluorine concentration in the first sub conductive layer is lower than that in the second sub conductive layer.

Abstract: According to one embodiment, a semiconductor storage device includes a memory pillar extending in a first direction. The memory pillar includes a tunnel insulation film, a charge storage layer on the tunnel insulation film, and a first block insulation film on the charge storage layer. A conductor layer extends in a second direction intersecting the first direction to meet a portion of the memory pillar. The conductor layer includes a first layer comprising molybdenum and a second layer comprising tungsten. The first layer is between the memory pillar and the second layer in the second direction.

Abstract: The metal graphite grounding brush including silver is made in slide contact with a peripheral surface of an axle and grounds the axle. The mass ratio between silver and carbonaceous components including a volatile component in the brush is silver above 30% and up to 90% and carbonaceous components less than 70% and down to 10%. When the total of silver and carbonaceous components is made 100%, the volatile component is down to 2.0% and up to 15%. The brush grounds the axle reliably so that noise from a car radio is reduced and has a long service life and mechanical strength.

Abstract: According to one embodiment, a semiconductor device includes a tunnel insulating film, a charge trap film on the tunnel insulating film, and a block insulating film on the charge trap film. The charge trap film is between the tunnel insulating film and the block insulating film. A conductive film is on the block insulating film. The block insulating film is between the charge trap film and the conductive film. The conductive film includes a first metal film adjacent to the block insulating film and a second metal film on the first metal film. The first metal film is between the block insulating film and the second metal film. The first metal film has an interfacial roughness on a side facing the second metal film that is greater than an interfacial roughness on a side facing the block insulating film.

Abstract: A semiconductor memory device includes a first insulating layer, a first conductive layer, a first pillar, a second pillar, and a second insulating layer. The first conductive layer contains tungsten. The first conductive layer includes a first sub conductive layer and a second sub conductive layer. The first pillar and the second pillar pass through the first insulating layer and the first conductive layer. The second insulating layer divides the first insulating layer and the first conductive layer. The first sub conductive layer is in contact with the second sub conductive layer and is provided between the second sub conductive layer and the first insulating layer. A fluorine concentration in the first sub conductive layer is lower than that in the second sub conductive layer.

Abstract: The metal graphite grounding brush including silver is made in slide contact with a peripheral surface of an axle and grounds the axle. The mass ratio between silver and carbonaceous components including a volatile component in the brush is silver above 30% and up to 90% and carbonaceous components less than 70% and down to 10%. When the total of silver and carbonaceous components is made 100%, the volatile component is down to 2.0% and up to 15%. The brush grounds the axle reliably so that noise from a car radio is reduced and has a long service life and mechanical strength.

Abstract: A semiconductor device according to an embodiment includes: a semiconductor substrate; a conductor including tungsten (W) or molybdenum (Mo); a first film provided between the conductor and the semiconductor substrate and including titanium (Ti) and silicon (Si); an insulating layer surrounding the conductor; and a second film provided between the conductor and the insulating layer, surrounding the conductor, and including titanium (Ti) and nitrogen (N). A first distance between the semiconductor substrate and an end portion of the second film on a side opposite to the semiconductor substrate is smaller than a second distance between the semiconductor substrate and an end portion of the conductor on a side opposite to the semiconductor substrate.

Abstract: According to one embodiment, a semiconductor device includes a substrate, a plurality of insulating films and a plurality of electrode films provided alternately on the substrate. The semiconductor device further includes a first insulating film, a first charge storage film, a third insulating film, a second charge storage film, a second insulating film, and a first semiconductor film that are sequentially provided along at least one side surface of each of the electrode films. The first charge storage film includes either (i) molybdenum, or (ii) titanium and nitrogen, and the second charge storage film includes a semiconductor film.

Abstract: A semiconductor device according to an embodiment includes: a semiconductor substrate; a conductor including tungsten (W) or molybdenum (Mo); a first film provided between the conductor and the semiconductor substrate and including titanium (Ti) and silicon (Si); an insulating layer surrounding the conductor; and a second film provided between the conductor and the insulating layer, surrounding the conductor, and including titanium (Ti) and nitrogen (N). A first distance between the semiconductor substrate and an end portion of the second film on a side opposite to the semiconductor substrate is smaller than a second distance between the semiconductor substrate and an end portion of the conductor on a side opposite to the semiconductor substrate.

Abstract: According to one embodiment, a semiconductor device includes a substrate, a plurality of insulating films and a plurality of electrode films provided alternately on the substrate. The semiconductor device further includes a first insulating film, a first charge storage film, a third insulating film, a second charge storage film, a second insulating film, and a first semiconductor film that are sequentially provided along at least one side surface of each of the electrode films. The first charge storage film includes either (i) molybdenum, or (ii) titanium and nitrogen, and the second charge storage film includes a semiconductor film.

Abstract: A video signal generation apparatus for decoding a bit stream to generate a video signal, includes: a writing unit configured to write a flag value indicating whether a decoding target block has been coded by intra-coding or inter-coding in a specified bit position on one bit plane having a size the same as that of the decoding target block, to write information indicating a coding division form of the decoding target block in a specified common area on the one bit plane, and to write the coding information in a specified switch interpretation area on the one bit plane according to a data format conforming to the intra-coding if the decoding target block has been coded by intra-coding, and to write the coding information in the specified switch interpretation area according to a data format conforming to the inter-coding if the decoding target block has been coded by inter-coding; and a generation unit configured to generate a video signal by superimposing the one bit plane on a decoded image of the decoding

Abstract: In order to actualize a power feeding control apparatus and a charging system that are capable of efficiently charging plural storage batteries using a load-capacity controlled power source, the power feeding control apparatus 1 is configured so that a changeover control of the feeding of the alternating-current voltage to each charger will be performed monitoring the magnitude of the alternating current flowing in each of the plural chargers 4 to 6, therewith, the power feeding control apparatus performs the feeding changeover control comprising the steps of: feeding only to a predetermined one particular charger at the early stage of the start of charging, in which stage a large charging current flows into a storage battery; monitoring inflow current of the predetermined one particular charger; and switching power feeding to another charger to start feeding thereto when the inflow current reduces to the charging saturation current (a current still flowing even at the fully charged state).

Abstract: A method includes generating a plurality of beams that each illuminate a separate portion of a spatial light modulator. The spatial light modulator has a first dimension of a first length and a second dimension of a second length. Each of the beams spans a portion of the first length of the first dimension and a portion of the second length of the second dimension. The method also includes scrolling the plurality of beams along the second dimension of the spatial light modulator while maintaining at least a first gap between each of the plurality of beams.

Abstract: A method includes generating a plurality of beams that each illuminate a separate portion of a spatial light modulator. The spatial light modulator has a first dimension of a first length and a second dimension of a second length. Each of the beams spans a portion of the first length of the first dimension and a portion of the second length of the second dimension. The method also includes scrolling the plurality of beams along the second dimension of the spatial light modulator while maintaining at least a first gap between each of the plurality of beams.

Abstract: A video signal generation apparatus for decoding a bit stream to generate a video signal, includes: a writing unit configured to write a flag value indicating whether a decoding target block has been coded by intra-coding or inter-coding in a specified bit position on one bit plane having a size the same as that of the decoding target block, to write information indicating a coding division form of the decoding target block in a specified common area on the one bit plane, and to write the coding information in a specified switch interpretation area on the one bit plane according to a data format conforming to the intra-coding if the decoding target block has been coded by intra-coding, and to write the coding information in the specified switch interpretation area according to a data format conforming to the inter-coding if the decoding target block has been coded by inter-coding; and a generation unit configured to generate a video signal by superimposing the one bit plane on a decoded image of the decoding

Abstract: A method includes generating a plurality of beams that each illuminate a separate portion of a spatial light modulator. The spatial light modulator has a first dimension of a first length and a second dimension of a second length. Each of the beams spans a portion of the first length of the first dimension and a portion of the second length of the second dimension. The method also includes scrolling the plurality of beams along the second dimension of the spatial light modulator while maintaining at least a first gap between each of the plurality of beams.

Abstract: A gene encoding a methylated catechin synthase that can effectively synthesize methylated catechins having high antiallergic activity. The gene encoding a methylated catechin synthase contains at least one nucleotide sequence selected from the group consisting of SEQ ID NOs: 1, 3 and 5.

Abstract: To make such an ordinary hub as works on the power fed through a power adapter connected to a commercial power supply be capable of maintaining its hub-function without interruption even when a commercial power supply failure occurs. The ordinary hub is connected to a line securement power supply unit 8 that is power-fed from a POE-compliant power-feeding hub 3 through a communication cable 5c, wherein a means for producing a power for an ordinary hub using a power fed through said communication cable 5c so as to feed produced power to an ordinary hub 2; and a storage battery 806, which stores power while power-receiving, to be used as the power source for producing a power for said ordinary hub when a power failure, are provided in said line securement power supply unit 8.

Abstract: In order to actualize a power feeding control apparatus and a charging system that are capable of efficiently charging plural storage batteries using a load-capacity controlled power source, the power feeding control apparatus 1 is configured so that a changeover control of the feeding of the alternating-current voltage to each charger will be performed monitoring the magnitude of the alternating current flowing in each of the plural chargers 4 to 6, therewith, the power feeding control apparatus performs the feeding changeover control comprising the steps of: feeding only to a predetermined one particular charger at the early stage of the start of charging, in which stage a large charging current flows into a storage battery; monitoring inflow current of the predetermined one particular charger; and switching power feeding to another charger to start feeding thereto when the inflow current reduces to the charging saturation current (a current still flowing even at the fully charged state).