Abstract: Disclosed is an imaging apparatus for generating data of a phase image based on an interference pattern acquired by a shearing interferometer, including: a differential phase data calculating unit that calculates first differential phase data expressing a change of a phase in a first direction and second differential phase data expressing a change of a phase in a second direction, based on interference pattern data generated by an electromagnetic wave transmitted through a subject; a second-order differential phase data calculating unit that calculates first second-order differential phase data by differentiating the first differential phase data in the first direction, and calculates second second-order differential phase data by differentiating the second differential phase data in the second direction; and a phase data calculating unit that calculates the phase image by solving a second-order differential equation including the first and second second-order differential phase data as functions.

Abstract: Disclosed is an imaging apparatus for generating data of a phase image based on an interference pattern acquired by a shearing interferometer, including: a differential phase data calculating unit that calculates first differential phase data expressing a change of a phase in a first direction and second differential phase data expressing a change of a phase in a second direction, based on interference pattern data generated by an electromagnetic wave transmitted through a subject; a second-order differential phase data calculating unit that calculates first second-order differential phase data by differentiating the first differential phase data in the first direction, and calculates second second-order differential phase data by differentiating the second differential phase data in the second direction; and a phase data calculating unit that calculates the phase image by solving a second-order differential equation including the first and second second-order differential phase data as functions.

Abstract: Disclosed is a tunnel excavating apparatus for excavating tunnels in earth. This tunnel excavating apparatus comprises shell bodies, an excavating mechanism disposed on front of the excavating portion shell body, and a propelling mechanism disposed within the shell body. The shell bodies include an excavating portion shell body, a front shell body, and a rear shell body disposed in order from the leading end side in the advancing direction of excavation. The propelling mechanism comprises a projection mechanism and an extension mechanism. The projection mechanism includes front circumferential jacks in the front shell body and rear circumferential jacks in the rear shell body, both of which are capable of extension and contraction in the outer circumferential direction.

Abstract: A displacement detection method detects a displacement from phase singularities before and after the displacement, by specifying the phase singularities based on predetermined elements by acquiring the elements from a phase structure of the phase singularities, and detecting positions of the phase singularities after the displacement based on the elements acquired by specifying of the phase singularity.

Abstract: Three-dimensional shape measuring instrument (white interferometer) for measuring the three-dimensional shape of an object to be measured by using white interference fringes, which detects the position where the amplitude of the white interference fringes takes on a maximum value with high accuracy in a short calculation processing time. An envelope distribution of the amplitude of the white interference fringes produced by the interference between the returning light from a reference mirror (6) and the returning light from an object (7) to be measured is determined, and an approximate position where the contrast of the white interference fringes is the highest is determined using this envelope distribution.

Abstract: A three-dimensional fractal-structure body partially or entirely comprises a three-dimensional fractal structure, the fractal structure body having a local minimum value at a particular wavelength determined by structural and material factors of the fractal structure in a transmissivity for electromagnetic waves and/or a local minimum value at a particular wavelength determined by structural and material factors of the fractal structure in the reflectivity for electromagnetic waves.

Abstract: The present invention relates to a displacement detection method for detecting a displacement from phase singularities before and after the displacement, a displacement detection device, a displacement detection program, a feature point matching method and a feature point matching program. The displacement detection method for detecting the displacement from the phase singularities before and after the displacement acquires predetermined specifies the phase singularities based on predetermined elements by acquiring the elements from a phase structure of the phase singularities, and detects positions of the phase singularities. Hence, it is possible to reliably specify the phase singularities before and after the displacement, and easily and reliably detect the displacement. Various displacements, including rotary displacement, are detectable.

Abstract: Without using an interferometer, small displacement and/or three-dimensional shape of an object is detected in a noncontact way with high accuracy using pseudo-phase information calculated from e.g., a speckle pattern having a spatially random structure. A speckle image of the test object of the before displacement is obtained, and a spatial frequency spectrum is calculated by executing an N-dimensional Fourier transform for this. The complex analytic signal is obtained by setting the amplitude of frequency spectrum in the half plane including zero frequency in this amplitude distribution to zero, and executing the frequency spectrum amplitude in the half plane of the remainder in the inverse Fourier transform. And then, the amplitude value of this complex analytic signal is replaced with the constant value, a part of the obtained analytic signal domain is clipped, the phase information is calculated by the phase-only correlation function, and the cross-correlation peak in N-dimension is obtained.

Abstract: There are provided: compound semiconductor particles that can display more excellent performance in functions peculiar to the compound semiconductor (e.g. luminosity and luminescence efficiency); and a production process for obtaining such compound semiconductor particles with economy, good productivity, and ease. Compound semiconductor particles, according to the present invention, are characterized by comprising body particles and a metal oxide, wherein the body particles have particle diameters of smaller than 1 ?m and are covered with the metal oxide and include a compound semiconductor including an essential element combination of at least one element X selected from the group consisting of C, Si, Ge, Sn, Pb, N, P, As, Sb, S, Se, and Te and at least one metal element M that is not identical with the element X, and wherein the metal oxide is a metal oxide to which an acyloxyl group is bonded.

Abstract: Three-dimensional shape measuring instrument (white interferometer) for measuring the three-dimensional shape of an object to be measured by using white interference fringes, which detects the position where the amplitude of the white interference fringes takes on a maximum value with high accuracy in a short calculation processing time. An envelope distribution of the amplitude of the white interference fringes produced by the interference between the returning light from a reference mirror (6) and the returning light from an object (7) to be measured is determined, and an approximate position where the contrast of the white interference fringes is the highest is determined using this envelope distribution.

Abstract: Without using an interferometer, small displacement and/or three-dimensional shape of an object is detected in a noncontact way with high accuracy using pseudo-phase information calculated from e.g., a speckle pattern having a spatially random structure. A speckle image of the test object of the before displacement is obtained, and a spatial frequency spectrum is calculated by executing an N-dimensional Fourier transform for this. The complex analytic signal is obtained by setting the amplitude of frequency spectrum in the half plane including zero frequency in this amplitude distribution to zero, and executing the frequency spectrum amplitude in the half plane of the remainder in the inverse Fourier transform. And then, the amplitude value of this complex analytic signal is replaced with the constant value, a part of the obtained analytic signal domain is clipped, the phase information is calculated by the phase-only correlation function, and the cross-correlation peak in N-dimension is obtained.

Abstract: An object of the present invention is to provide a metal oxide particle which exercises more excellent ultraviolet absorbency as a matter of course and combines therewith merits of, for example, either being shifted in ultraviolet absorption edge toward the longer wavelength side and being excellent also in the absorption efficiency of a long-wavelength range of ultraviolet rays, or having good transparency and, for example, even in cases where added into or coated onto substrates, not damaging the transparency or hue of the substrates.

Abstract: A three-dimensional fractal structure body that had not been realized by the prior art and newly developed technologies is provided. The fractal structure body partially or entirely comprises a three-dimensional fractal structure, the fractal structure body having a local minimum value at a particular wavelength determined by structural and material factors of the fractal structure in a transmissivity for electromagnetic wave and/or a local minimum value at a particular wavelength determined by structural and material factors of the fractal structure in the reflectivity for electromagnetic wave.

Abstract: There are provided: compound semiconductor particles that can display more excellent performance in functions peculiar to the compound semiconductor (e.g. luminosity and luminescence efficiency); and a production process for obtaining such compound semiconductor particles with economy, good productivity, and ease. Compound semiconductor particles, according to the present invention, are characterized by comprising body particles and a metal oxide, wherein the body particles have particle diameters of smaller than 1 ?m and are covered with the metal oxide and include a compound semiconductor including an essential element combination of at least one element X selected from the group consisting of C, Si, Ge, Sn, Pb, N, P, As, Sb, S, Se, and Te and at least one metal element M that is not identical with the element X, and wherein the metal oxide is a metal oxide to which an acyloxyl group is bonded.

Abstract: A surface acoustic wave filter includes multiple serial surface acoustic wave resonators and parallel surface acoustic wave resonators arranged in a ladder configuration between an input electrode pad and an output electrode pad on a piezoelectric substrate, and a grounded electrode pattern is arranged on the piezoelectric substrate so as to surround at least one of the input electrode pad and the output electrode pad. This provides a small-sized surface acoustic wave filter with improved attenuation near the pass band on the high-frequency side.

Abstract: A surface acoustic wave filter device includes a surface acoustic wave filter element having a ladder type circuit electrically connected and mechanically fixed to a package by a face down mounting method. A micro-strip line connected to series arm resonator and/or a parallel arm resonator is provided inside the package, whereby excellent filter characteristics are provided by the addition of the inductance component thereof.

Abstract: An electronic component includes an electronic element and a substrate to which the electronic element is mounted, the electronic element and the substrate being electrically or mechanically connected to each other by at least three bumps. Both the value obtained by dividing the total bonding-area of the bumps bonded to the electronic element by the mass of the electronic element and the value obtained by dividing the total bonding-area of the bumps bonded to the substrate by the mass of the electronic element are at least about 8.8 mm2/g.

Abstract: A three-dimensional shape measuring method by which measurement of a three-dimensional shape is realized with an improved precision. Grid patterns comprising a plurality of one-dimensional grids 1, 2 and 3, each having a period and direction different from those of the others, are simultaneously projected upon objects to be measured, using different colors for each of the one-dimensional grids 1, 2 and 3. Subsequently, a grid image deformed in accordance with the three-dimensional shapes of the objects to be measured is imaged, the grid image is separated by colors into one-dimensional grid components of each color, a phase for each of the one-dimensional grid components is detected, and then, measurement values of the three-dimensional shapes are obtained on the basis of the detected phases. At the same time, by imaging the objects to be measured by use of white light, color information on the objects to be measured are measured as well.

Abstract: A surface acoustic wave filter includes multiple serial surface acoustic wave resonators and parallel surface acoustic wave resonators arranged in a ladder configuration between an input electrode pad and an output electrode pad on a piezoelectric substrate, and a grounded electrode pattern is arranged on the piezoelectric substrate so as to surround at least one of the input electrode pad and the output electrode pad. This provides a small-sized surface acoustic wave filter with improved attenuation near the pass band on the high-frequency side.

Abstract: An electronic part is provided (1) containing an electronic element (2) and a substrate (3) to which the electronic element (2) is mounted, the electronic element (2) and the substrate (3) being electrically or mechanically connected to each other by means of at least three bumps (4). Both the value obtained by dividing the total bonding-area of the bumps (4) bonded to the electronic element (2) by the mass of the electronic element (2) and the value obtained by dividing the total bonding-area of the bumps (4) bonded to the substrate (3) by the mass of the electronic element (2) are at least 8.8 mm2/g.