Patents by Inventor Mitsuo Tokuda

Mitsuo Tokuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8796651
    Abstract: A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.
    Type: Grant
    Filed: January 20, 2011
    Date of Patent: August 5, 2014
    Assignee: Hitachi, Ltd.
    Inventors: Hiroyasu Shichi, Tohru Ishitani, Hidemi Koike, Kaoru Umemura, Eiichi Seya, Mitsuo Tokuda, Satoshi Tomimatsu, Hideo Kashima, Muneyuki Fukuda
  • Patent number: 8618520
    Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.
    Type: Grant
    Filed: July 12, 2012
    Date of Patent: December 31, 2013
    Assignee: Hitachi, Ltd.
    Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasuhiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, Hideo Kashima, Kaoru Umemura
  • Publication number: 20120273692
    Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.
    Type: Application
    Filed: July 12, 2012
    Publication date: November 1, 2012
    Applicant: HITACHI, LTD.
    Inventors: Mitsuo TOKUDA, Muneyuki FUKUDA, Yasuhiro MITSUI, Hidemi KOIKE, Satoshi TOMIMATSU, Hiroyasu SHICHI, Hideo KASHIMA, Kaoru UMEMURA
  • Patent number: 8222618
    Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.
    Type: Grant
    Filed: January 14, 2011
    Date of Patent: July 17, 2012
    Assignee: Hitachi, Ltd.
    Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasuhiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, Hideo Kashima, Kaoru Umemura
  • Publication number: 20110174974
    Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.
    Type: Application
    Filed: January 14, 2011
    Publication date: July 21, 2011
    Applicant: HITACHI, LTD.
    Inventors: Mitsuo TOKUDA, Muneyuki FUKUDA, Yasuhiro MITSUI, Hidemi KOIKE, Satoshi TOMIMATSU, Hiroyasu SHICHI, Hideo KASHIMA, Kaoru UMEMURA
  • Publication number: 20110114476
    Abstract: A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.
    Type: Application
    Filed: January 20, 2011
    Publication date: May 19, 2011
    Inventors: Hiroyasu Shichi, Tohru Ishitani, Hidemi Koike, Kaoru Umemura, Eiichi Seya, Mitsuo Tokuda, Satoshi Tomimatsu, Hideo Kashima, Muneyuki Fukuda
  • Patent number: 7897936
    Abstract: A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.
    Type: Grant
    Filed: July 5, 2007
    Date of Patent: March 1, 2011
    Assignee: Hitachi, Ltd.
    Inventors: Hiroyasu Shichi, Tohru Ishitani, Hidemi Koike, Kaoru Umemura, Eiichi Seya, Mitsuo Tokuda, Satoshi Tomimatsu, Hideo Kashima, Muneyuki Fukuda
  • Patent number: 7888639
    Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: February 15, 2011
    Assignee: Hitachi, Ltd.
    Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasuhiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, Hideo Kashima, Kaoru Umemura
  • Patent number: 7550750
    Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.
    Type: Grant
    Filed: February 15, 2007
    Date of Patent: June 23, 2009
    Assignee: Hitachi, Ltd.
    Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasuhiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, Hideo Kashima, Kaoru Umemura
  • Patent number: 7470918
    Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.
    Type: Grant
    Filed: February 15, 2007
    Date of Patent: December 30, 2008
    Assignee: Hitachi Ltd.
    Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasuhiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, Hideo Kashima, Kaoru Umemura
  • Patent number: 7465945
    Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.
    Type: Grant
    Filed: April 5, 2007
    Date of Patent: December 16, 2008
    Assignee: Hitachi, Ltd.
    Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasuhiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, Hideo Kashima, Kaoru Umemura
  • Publication number: 20080191151
    Abstract: A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.
    Type: Application
    Filed: July 5, 2007
    Publication date: August 14, 2008
    Inventors: Hiroyasu Shichi, Tohru Ishitani, Hidemi Koike, Kaoru Umemura, Eiichi Seya, Mitsuo Tokuda, Satoshi Tomimatsu, Hideo Kashima, Muneyuki Fukuda
  • Publication number: 20080067385
    Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.
    Type: Application
    Filed: October 31, 2007
    Publication date: March 20, 2008
    Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasuhiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, Hideo Kashima, Kaoru Umemura
  • Patent number: 7268356
    Abstract: A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.
    Type: Grant
    Filed: July 26, 2004
    Date of Patent: September 11, 2007
    Assignee: Hitachi, Ltd.
    Inventors: Hiroyasu Shichi, Tohru Ishitani, Hidemi Koike, Kaoru Umemura, Eiichi Seya, Mitsuo Tokuda, Satoshi Tomimatsu, Hideo Kashima, Muneyuki Fukuda
  • Publication number: 20070181831
    Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.
    Type: Application
    Filed: April 5, 2007
    Publication date: August 9, 2007
    Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasuhiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, Hideo Kashima, Kaoru Umemura
  • Publication number: 20070158591
    Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.
    Type: Application
    Filed: February 15, 2007
    Publication date: July 12, 2007
    Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasahiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, HIdeo Kashima, Kaoru Umemura
  • Publication number: 20070158564
    Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.
    Type: Application
    Filed: February 15, 2007
    Publication date: July 12, 2007
    Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasuhiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, Hideo Kashima, Kaoru Umemura
  • Patent number: 7205554
    Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.
    Type: Grant
    Filed: May 12, 2005
    Date of Patent: April 17, 2007
    Assignee: Hitachi, Ltd.
    Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasuhiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, Hideo Kashima, Kaoru Umemura
  • Patent number: 7205560
    Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.
    Type: Grant
    Filed: May 12, 2005
    Date of Patent: April 17, 2007
    Assignee: Hitachi, Ltd.
    Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasuhiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, Hideo Kashima, Kaoru Umemura
  • Publication number: 20050211927
    Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.
    Type: Application
    Filed: May 12, 2005
    Publication date: September 29, 2005
    Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasuhiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, Hideo Kashima, Kaoru Umemura