Patents by Inventor Mitsuo Tokuda
Mitsuo Tokuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20050199828Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.Type: ApplicationFiled: May 12, 2005Publication date: September 15, 2005Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasuhiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, Hideo Kashima, Kaoru Umemura
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Patent number: 6927391Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.Type: GrantFiled: June 29, 2004Date of Patent: August 9, 2005Assignee: Hitachi, Ltd.Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasuhiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, Hideo Kashima, Kaoru Umemura
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Publication number: 20050006600Abstract: A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.Type: ApplicationFiled: July 26, 2004Publication date: January 13, 2005Inventors: Hiroyasu Shichi, Tohru Ishitani, Hidemi Koike, Kaoru Umemura, Eiichi Seya, Mitsuo Tokuda, Satoshi Tomimatsu, Hideo Kashima, Muneyuki Fukuda
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Publication number: 20050001164Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.Type: ApplicationFiled: June 29, 2004Publication date: January 6, 2005Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasuhiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, Hideo Kashima, Kaoru Umemura
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Patent number: 6794663Abstract: A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.Type: GrantFiled: November 4, 2003Date of Patent: September 21, 2004Assignee: Hitachi, Ltd.Inventors: Hiroyasu Shichi, Tohru Ishitani, Hidemi Koike, Kaoru Umemura, Eiichi Seya, Mitsuo Tokuda, Satoshi Tomimatsu, Hideo Kashima, Muneyuki Fukuda
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Patent number: 6781125Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.Type: GrantFiled: September 24, 2001Date of Patent: August 24, 2004Assignee: Hitachi, Ltd.Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasuhiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, Hideo Kashima, Kaoru Umemura
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Publication number: 20040089821Abstract: A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.Type: ApplicationFiled: November 4, 2003Publication date: May 13, 2004Applicant: Hitachi, Ltd.Inventors: Hiroyasu Shichi, Tohru Ishitani, Hidemi Koike, Kaoru Umemura, Eiichi Seya, Mitsuo Tokuda, Satoshi Tomimatsu, Hideo Kashima, Muneyuki Fukuda
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Patent number: 6664552Abstract: A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.Type: GrantFiled: November 5, 2001Date of Patent: December 16, 2003Assignee: Hitachi, Ltd.Inventors: Hiroyasu Shichi, Tohru Ishitani, Hidemi Koike, Kaoru Umemura, Eiichi Seya, Mitsuo Tokuda, Satoshi Tomimatsu, Hideo Kashima, Muneyuki Fukuda
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Publication number: 20020079463Abstract: The invention provides a sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated.Type: ApplicationFiled: November 5, 2001Publication date: June 27, 2002Inventors: Hiroyasu Shichi, Tohru Ishitani, Hidemi Koike, Kaoru Umemura, Eiichi Seya, Mitsuo Tokuda, Satoshi Tomimatsu, Hideo Kashima, Muneyuki Fukuda
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Publication number: 20020050565Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.Type: ApplicationFiled: September 24, 2001Publication date: May 2, 2002Applicant: Hitachi, Ltd.Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasuhiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, Hideo Kashima, Kaoru Umemura
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Patent number: 5134965Abstract: Disclosed is a plasma CVD apparatus and a method therefor, the apparatus comprising: a microwave generating portion; a coaxial cavity resonator for making a microwave supplied from the microwave generating portion resonate; a plurality of gas leading inlets provided in under portions of an axis of the cavity resonator and in peripheral wall portions of the cavity resonator for leading-in a supplied CVD gas; and a plasma generating chamber in which the CVD gas lead into the plasma generating chamber through the gas leading inlets and made to flow uniformly onto a surface of a substrate is subject to the microwave made intensive through resonance in the cavity resonator and radiated through a coupling plate so that uniform plasma is generated to thereby form a thin film on the surface of the substrate.Type: GrantFiled: June 14, 1990Date of Patent: August 4, 1992Assignee: Hitachi, Ltd.Inventors: Mitsuo Tokuda, Junzou Azuma, Toru Otsubo, Yasuhiro Yamaguchi, Ichirou Sasaki
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Patent number: 4985109Abstract: A plasma processing apparatus including a microwave generator, a waveguide for supplying microwaves generated by the microwave generator, a cavity resonator for resonating the microwaves supplied by the waveguide, and a plasma processing chamber. The plasma processing chamber is coupled to the cavity resonator for receiving resonated microwaves therefrom and for generating a plasma therein. The plasma processing chamber is provided with a stage for holding a substrate for plasma processing, and apparatus for introducing a plasma processing gas to the plasma processing chamber for exhausting gas therefrom. A separation plate separates the cavity resonator and the plasma processing chamber and enables resonated microwaves to be transmitted therethrough from the cavity resonator means to the plasma processing chamber.Type: GrantFiled: February 6, 1990Date of Patent: January 15, 1991Assignee: Hitachi, Ltd.Inventors: Toru Otsubo, Mitsuo Tokuda, Yasuhiro Yamaguchi, Ichirou Sasaki, Kazuhiro Ohara, Hirohisa Usuami, Junzou Azuma