Abstract: Provided is a liquid ejection head, including: a flow path forming member including: an ejection orifice for ejecting liquid therefrom; and a liquid flow path communicated with the ejection orifice; a silicon substrate including a supply port for supplying the liquid to the liquid flow path; and a protective film which is formed on a wall surface of the supply port and which is formed of an organic resin which is the same as a material of a member forming the flow path forming member.

Abstract: When an insulating layer is provided in order to protect an energy generating element, there arises a possibility that the layer dissolves in a contacting liquid. Therefore, in order to eject liquid, a first protection layer containing metal is provided on the insulating layer facing a substrate for a liquid-ejection head and a second protection layer containing metal is provided on the surface of a liquid supply port to which a base containing silicon is exposed.

Abstract: The present invention provides an ink jet recording head which includes a substrate, an energy generating element which is disposed on the substrate and generates energy for discharging a liquid, an electrode which is disposed on the substrate and is electrically connected to the energy generating element, a passage-forming member which is disposed on the substrate, an adhesion layer which is disposed on the substrate and facilitates adhesion between the passage-forming member and the substrate, and a bump disposed on the electrode. The area of an upper surface of the bump is larger than the area of a lower surface of the bump, the lower surface being located on the substrate side, the upper surface being located opposite the lower surface, and a side face of the bump is covered with the adhesion layer. Thereby, a protective film is formed around the bump.

Abstract: A method for processing a silicon substrate includes preparing a first silicon substrate including an etching mask layer including first and second opening portions; forming a first recess in a portion of the silicon substrate corresponding to a region in the first opening portion; etching the silicon substrate by crystal anisotropic etching through the etching mask layer with an etching apparatus and an etchant, the etching proceeding in the first and second opening portions to form a through hole in a position corresponding to the first opening portion and to form a second recess in a position corresponding to the second opening portion; calculating an etching rate of the silicon substrate in terms of the etchant by using the second recess; and determining, by using the calculated etching rate, an etching condition for etching another silicon substrate with the etching apparatus after the etching of the first silicon substrate.

Abstract: Provided is a process of producing a liquid discharge head having a substrate, a passage-forming member, and a patterned layer. The process includes providing a resin layer on a substrate; providing a resist pattern on the resin layer for patterning the resin layer; forming a patterned layer by patterning the resin layer using the resist pattern as a mask; providing a layer for forming a passage pattern having a shape of passage on the resist pattern lying on the patterned layer; forming a passage pattern by patterning the layer for forming a passage pattern; removing the resist pattern; providing a passage-forming member so as to cover the passage pattern and the patterned layer; and removing the passage pattern to give the passage.

Abstract: A method for manufacturing a liquid-ejection head substrate including a silicon substrate having a supply port for supplying liquid is provided. The method includes: forming an etching mask layer on a surface of the silicon substrate, the etching mask layer having an opening in a portion corresponding to the supply port; forming a first recess in the surface of the silicon substrate by anisotropically etching the silicon substrate through the opening in the etching mask layer; forming a second recess that extends toward the other surface of the silicon substrate, in a surface of the first recess in the silicon substrate; and forming the supply port by anisotropically etching the silicon substrate from the surface provided with the second recess.

Abstract: The present invention provides an ink jet recording head which includes a substrate, an energy generating element which is disposed on the substrate and generates energy for discharging a liquid, an electrode which is disposed on the substrate and is electrically connected to the energy generating element, a passage-forming member which is disposed on the substrate, an adhesion layer which is disposed on the substrate and facilitates adhesion between the passage-forming member and the substrate, and a bump disposed on the electrode. The area of an upper surface of the bump is larger than the area of a lower surface of the bump, the lower surface being located on the substrate side, the upper surface being located opposite the lower surface, and a side face of the bump is covered with the adhesion layer. Thereby, a protective film is formed around the bump.

Abstract: A current path pattern of semiconductor material is formed on the insulating principal surface of a substrate. A gate pattern three-dimensionally crosses the current path pattern in first and second cross areas. A channel region of the current path pattern is defined in an area superposed upon by the gate pattern. A gate insulating film is disposed between the current path pattern and gate pattern. The current path pattern has a lightly doped drain structure on both sides of the channel region in the first cross area, and is not provided with the lightly doped drain structure in regions in contact with the channel region in the second cross area. TFTs are provided having a small off-current and being not necessary for high precision position alignment during manufacture processes even if a gate length is short.

Abstract: A current path pattern of semiconductor material is formed on the insulating principal surface of a substrate. A gate pattern three-dimensionally crosses the current path pattern in first and second cross areas. A channel region of the current path pattern is defined in an area superposed upon by the gate pattern. A gate insulating film is disposed between the current path pattern and gate pattern. The current path pattern has a lightly doped drain structure on both sides of the channel region in the first cross area, and is not provided with the lightly doped drain structure in regions in contact with the channel region in the second cross area. TFTs are provided having a small off-current and being not necessary for high precision position alignment during manufacture processes even if a gate length is short.

Abstract: A liquid crystal display substrate including gate and drain bus lines that are electrically insulated from each other at cross areas, pixel electrodes between the cross areas, and first thin film transistors connecting corresponding drain bus lines and pixel electrodes. Each first thin film transistor includes a channel region where current flows in a first direction, and first and second impurity doped regions of, respectively, first and second impurity concentrations. The first and second doped regions sandwich the channel region. The second impurity concentration is higher than the first. Also, a second thin film transistor is formed in the peripheral circuit area, and includes a channel region where current flows in a second direction that is perpendicular to the first direction. Third impurity doped regions, disposed on both sides of the channel region, have a third impurity concentration.

Abstract: A current path pattern of semiconductor material is formed on the insulating principal surface of a substrate. A gate pattern three-dimensionally crosses the current path pattern in first and second cross areas. A channel region of the current path pattern is defined in an area superposed upon by the gate pattern. A gate insulating film is disposed between the current path pattern and gate pattern. The current path pattern has a lightly doped drain structure on both sides of the channel region in the first cross area, and is not provided with the lightly doped drain structure in regions in contact with the channel region in the second cross area. TFTs are provided having a small off-current and being not necessary for high precision position alignment during manufacture processes even if a gate length is short.