Abstract: Appropriate network data for an indoor map can be efficiently generated using input data including a structure of an indoor space. In a network data generation device (10) that generates, from the input data including at least the structure of the indoor space and information indicating a property based on the structure of the indoor space, network data, the network data including a link representing a movable space on a map and a node that is a starting point or an ending point of the link, a link/node generation unit (142) generates a set of links and a set of nodes based on the input data.

Abstract: A plasma processing apparatus that performs plasma processing to a substrate held on a transport carrier including a frame and a holding sheet that covers an opening of the frame includes: a transport mechanism that transports the transport carrier; a position measuring section that measures a position of the substrate to the frame; a plasma processing section that includes a plasma processing stage on which the transport carrier is loaded and a cover that covers the frame and a part of the holding sheet loaded on the plasma processing stage, and has a window section for exposing a part of the substrate; and a control section that controls the transport mechanism such that the transport carrier is loaded on the plasma processing stage to satisfy a positional relationship between the window section and the substrate based on the position information of the substrate to the frame.

Abstract: A semiconductor chip manufacturing method includes preparing a semiconductor wafer including a front surface on which a bump is exposed, a rear surface located at a side opposite to the front surface, a plurality of element regions in each of which the bump is formed, and a dividing region defining each of the element regions, forming a mask which covers the bump and has an opening exposing the dividing region on the surface of the semiconductor wafer by spraying liquid which contains raw material of the mask along the bump by a spray coating method, and singulating the semiconductor wafer by exposing the surface of the semiconductor wafer to first plasma and etching the dividing region, which is exposed to the opening, until the rear surface is reached in a state where the bump is covered by the mask.

Abstract: In a plasma processing step that is used in the method of manufacturing the element chip for manufacturing a plurality of element chips by dividing a substrate having a plurality of element regions, the substrate is divided into element chips 10 by exposing the substrate to a first plasma. Therefore, element chips having a first surface, a second surface, and a side surface connecting the first surface and the second surface are held spaced from each other on a carrier. A protection film covering the element chip is formed only on the side surface and it is possible to suppress creep-up of a conductive material to the side surface in the mounting step by exposing the element chips to second plasma in which a mixed gas of fluorocarbon and helium is used as a raw material gas.

Abstract: An element chip manufacturing method includes a preparation process of preparing a substrate which includes a first surface having an exposed bump and a second surface opposite to the first surface and includes a plurality of element regions defined by dividing regions, a bump embedding process of embedding at least a head top part of the bump into the adhesive layer, a mask forming process of forming a mask in the second surface. The method for manufacturing the element chip includes a holding process of arranging the first surface to oppose a holding tape supported on a frame and holding the substrate on the holding tape, a placement process of placing the substrate on a stage provided inside of a plasma processing apparatus through the holding tape, after the mask forming process and the holding process.

Abstract: A method for manufacturing an element chip includes a protection film stacking step of staking a protection film to the element region, and the dividing region, the part of the exposed second damaged region and a protection film etching step of removing a part of the protection film which is stacked on the dividing region and the protection film which is stacked on the element region by exposing the substrate to second plasma and remaining the protection film for covering the part of the second damaged region. Furthermore, the method for manufacturing an element chip includes a plasma dicing step of dividing the substrate to a plurality of element chips by exposing the substrate to third plasma in a state where the second main surface is supported by a supporting member.

Abstract: An element chip manufacturing method includes a preparation process of preparing a substrate which includes a first surface provided with a bump and a second surface and includes a plurality of element regions defined by dividing regions, a bump embedding process of adhering a protection tape having an adhesive layer to the first surface and embedding. The element chip manufacturing method includes a thinning process of grinding the second surface in a state where the protection tape is adhered to the first surface and thinning the substrate, after the bump embedding process, a mask forming process of forming a mask in the second surface and exposes the dividing regions, after the thinning process, a holding process of arranging the first surface to oppose a holding tape supported on a frame and holding the substrate on the holding tape.

Abstract: The method includes a laser scribing step of forming an opening including an exposing portion, where the first layer is exposed, by irradiating the dividing region of the substrate with laser light from the first main surface side, forming a remaining region on which the second layer in the dividing region remains around the opening other than the exposing portion, and forming a first damaged region of a surface layer portion of the first layer including the exposing portion and a second damaged region of a surface layer portion of the first layer to be covered by the remaining region on the first layer of the dividing region.

Abstract: In a plasma processing step that is used in the method of manufacturing the element chip for manufacturing a plurality of element chips by dividing a substrate having a plurality of element regions, the substrate is divided into the element chips by exposing the substrate to first plasma. Therefore, the element chips having a first surface, a second surface, and a side surface on which a plurality of convex portions are formed are held spaced from each other on a carrier. A protection film is formed on the side surface of the element chip by exposing the element chip to second plasma, at least convex portions formed on the side surface are covered by the protection film in the protection film formation, and creep-up of a conductive material to the side surface is suppressed in the mounting step.

Abstract: A method for manufacturing an element chip includes a protection film etching step of removing a part of the protection film which is stacked on the dividing region and the protection film which is stacked on the element region through etching the protection film anisotropically by exposing the substrate to first plasma and remaining the protection film for covering an end surface of the element region. Furthermore, the method for manufacturing an element chip includes an isotropic etching step of etching the dividing region isotropically by exposing the substrate to second plasma and a plasma dicing step of dividing the substrate to a plurality of element chips including the element region by exposing the substrate to third plasma in a state where the second main surface is supported by a supporting member.

Abstract: In a method of fabricating element chips, a method of forming a mask pattern, and a method of processing a substrate, a process sequence is set such that developing in which the exposure-ended protection film is patterned is performed, after grinding in which the substrate is thinned by grinding a second surface opposite to a first surface to which a photosensitive protection film is pasted. Thereby, it is possible to perform the grinding for thinning in a state where the protection film is stable without being patterned, and to prevent the substrate or the protection film on which a mask pattern of the substrate is formed from being damaged at the time of the grinding, even in a case where a thin substrate of a wafer shape becomes a target.

Abstract: A semiconductor chip manufacturing method includes preparing a semiconductor wafer including a front surface on which a bump is exposed, a rear surface located at a side opposite to the front surface, a plurality of element regions in each of which the bump is formed, and a dividing region defining each of the element regions, forming a mask which covers the bump and has an opening exposing the dividing region on the surface of the semiconductor wafer by spraying liquid which contains raw material of the mask along the bump by a spray coating method, and singulating the semiconductor wafer by exposing the surface of the semiconductor wafer to first plasma and etching the dividing region, which is exposed to the opening, until the rear surface is reached in a state where the bump is covered by the mask.

Abstract: An element chip manufacturing method includes a preparation process of preparing a substrate which includes a first surface provided with a bump and a second surface and includes a plurality of element regions defined by dividing regions, a bump embedding process of adhering a protection tape having an adhesive layer to the first surface and embedding. The element chip manufacturing method includes a thinning process of grinding the second surface in a state where the protection tape is adhered to the first surface and thinning the substrate, after the bump embedding process, a mask forming process of forming a mask in the second surface and exposes the dividing regions, after the thinning process, a holding process of arranging the first surface to oppose a holding tape supported on a frame and holding the substrate on the holding tape.

Abstract: An element chip manufacturing method includes a preparation process of preparing a substrate which includes a first surface having an exposed bump and a second surface opposite to the first surface and includes a plurality of element regions defined by dividing regions, a bump embedding process of embedding at least a head top part of the bump into the adhesive layer, a mask forming process of forming a mask in the second surface. The method for manufacturing the element chip includes a holding process of arranging the first surface to oppose a holding tape supported on a frame and holding the substrate on the holding tape, a placement process of placing the substrate on a stage provided inside of a plasma processing apparatus through the holding tape, after the mask forming process and the holding process.

Abstract: Provided is a plasma treatment method including: placing a substrate carrier holding a substrate on a stage; adjusting a distance between a cover and the stage to a first distance in which the cover covers a frame without coming into contact with the substrate carrier; performing a plasma treatment on the substrate placed on the stage after the adjusting of the distance; carrying the substrate together with the substrate carrier out from a reaction chamber after the performing of the plasma treatment; and removing an adhered substance adhered to the cover by generating plasma in the inside of the reaction chamber after the carrying of the substrate, in which the distance between the cover and the stage in the removing of the adhered substance is a second distance greater than the first distance.

Abstract: The method includes a laser scribing step of forming an opening including an exposing portion, where the first layer is exposed, by irradiating the dividing region of the substrate with laser light from the first main surface side, forming a remaining region on which the second layer in the dividing region remains around the opening other than the exposing portion, and forming a first damaged region of a surface layer portion of the first layer including the exposing portion and a second damaged region of a surface layer portion of the first layer to be covered by the remaining region on the first layer of the dividing region.

Abstract: A method for manufacturing an element chip includes a laser dicing step of dividing the substrate to a plurality of element chips including the element region by irradiating the dividing region of the substrate with laser light, in a state of supported by a supporting member and forming a damaged region on an end surface of the element chip. Furthermore, the method for manufacturing an element chip includes a protection film stacking step of stacking a protection film on the first main surface and the end surface of the element chip, after the laser dicing step and a protection film etching step of removing the protection film stacked on the first main surface through etching the protection film anisotropically by exposing the element chip to plasma, after the protection film stacking, step and remaining the protection film for covering the damaged region.

Abstract: A method for manufacturing an element chip includes a protection film stacking step of staking a protection film to the element region, and the dividing region, the part of the exposed second damaged region and a protection film etching step of removing a part of the protection film which is stacked on the dividing region and the protection film which is stacked on the element region by exposing the substrate to second plasma and remaining the protection film for covering the part of the second damaged region. Furthermore, the method for manufacturing an element chip includes a plasma dicing step of dividing the substrate to a plurality of element chips by exposing the substrate to third plasma in a state where the second main surface is supported by a supporting member.

Abstract: A method for manufacturing an element chip includes a protection film etching step of removing a part of the protection film which is stacked on the dividing region and the protection film which is stacked on the element region through etching the protection film anisotropically by exposing the substrate to first plasma and remaining the protection film for covering an end surface of the element region. Furthermore, the method for manufacturing an element chip includes an isotropic etching step of etching the dividing region isotropically by exposing the substrate to second plasma and a plasma dicing step of dividing the substrate to a plurality of element chips including the element region by exposing the substrate to third plasma in a state where the second main surface is supported by a supporting member.

Abstract: A method of manufacturing an element chip includes an isotropic etching step of removing the first damaged region and the second damaged region through etching the first layer isotropically by exposing the substrate to first plasma after the laser scribing step. The method of manufacturing an element chip further includes a plasma, dicing step of dividing the substrate to a plurality of element chips including the element region through etching the first layer anisotropically by exposing the substrate to second plasma in a state where the second main surface is supported by a supporting member, after the isotropic etching step.