Patents by Inventor Mitsuru Ikeda

Mitsuru Ikeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4860076
    Abstract: A solid state imaging device comprises a transparent electrode, a photoconductive layer, and a plurality of scanning circuits for consecutively selecting signals in the photoconductive layer. The photoconductive layer is formed of amorphous semiconductor comprising amorphous silicon as the major component and further containing an element serving to lower the capture level within the energy gap and a trace amount of chalcogen element as a chemical modifier.
    Type: Grant
    Filed: November 29, 1988
    Date of Patent: August 22, 1989
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Masatoshi Tabei, Mitsuru Ikeda, Yosuke Nakajima
  • Patent number: 4735908
    Abstract: A solid-state imaging device having a scanning circuit and a photoconductive film formed in layers on a semiconductor substrate, and a process for forming the same, wherein high resolution with substantially no color mixing is attained. An electrode layer is formed over the semiconductor substrate for providing the plural electrodes, and a photoconductive film is formed over the electrode layer. A first transparent electrode is produced over the photoconductive film, after which a resist pattern is formed on the first transparent electrode layer corresponding to the pixels. The first transparent layer and the photoconductive film are etched according to the resist pattern to spatially isolate adjacent pixels in the first transparent layer and the photoconductive film. Adjacent pixels are isolated by etching, using the resist pattern, that part of the electrode layer on which are disposed the first transparent electrode layer and the photoconductive film between isolated pixels.
    Type: Grant
    Filed: July 24, 1987
    Date of Patent: April 5, 1988
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Akio Higashi, Haruji Shinada, Kazuhiro Kawajiri, Yoshihiro Ono, Mitsuo Saitou, Hiroshi Tamura, Mitsuru Ikeda
  • Patent number: 4698308
    Abstract: A device for continuously and accurately measuring the number of bacteria present in superpure water such as may be used in the manufacture of semiconductor devices and the like. A sample flow of the superpure water is passed through a generally rectangular measuring flow path having a small thickness and large width. A reagent is added to the flow in the measuring flow path of a type which reacts with bacteria to produce products which fluoresce upon application of an exciting light beam. The light produced by such fluorescence is detected and the detection output converted to a signal indicative of the number of bacteria present in the sample flow.
    Type: Grant
    Filed: February 14, 1986
    Date of Patent: October 6, 1987
    Assignee: Fuji Photo Film Co., Ltd.
    Inventor: Mitsuru Ikeda
  • Patent number: 4694317
    Abstract: A solid-state imaging device having a scanning circuit and a photoconductive film formed in layers on a semiconductor substrate, and a process for forming the same, wherein high resolution with substantially no color mixing is attained. An electrode layer is formed over the semiconductor substrate for providing the plural electrodes, and a photoconductive film is formed over the electrode layer. A first transparent electrode is produced over the photoconductive film, after which a resist pattern is formed on the first transparent electrode layer corresponding to the pixels. The first transparent layer and the photoconductive film are etched according to the resist pattern to spatially isolate adjacent pixels in the first transparent layer and the photoconductive film. Adjacent pixels are isolated by etching, using the resist pattern, that part of the electrode layer on which are disposed the first transparent electrode layer and the photoconductive film between isolated pixels.
    Type: Grant
    Filed: October 22, 1985
    Date of Patent: September 15, 1987
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Akio Higashi, Haruji Shinada, Kazuhiro Kawajiri, Yoshihiro Ono, Mitsuo Saitou, Hiroshi Tamura, Mitsuru Ikeda
  • Patent number: 4652735
    Abstract: An image reader having a high sensitive detection system for detecting a variation in a first light quantity to generate a first output, a low sensitive detection system for detecting a variation in a second light quantity to generate a second output where the second light quantity is greater than the said first light quantity, and a signal composing circuit for receiving the outputs of the high and low sensitive detection systems, each of the detection systems being so disposed as to detect simultaneously or substantially simultaneously a ray bundle from a picture element of a picture, and the output of the signal composing circuit being (a) the output of the high sensitive detection system when the received light quantity is smaller than a threshold light quantity which can be detected with substantially the same degree of accuracy by both the detection systems or (b) the sum of (i) the output of the low sensitive detection system and (ii) the difference between the outputs of the detection systems at the t
    Type: Grant
    Filed: April 30, 1984
    Date of Patent: March 24, 1987
    Assignee: Hitachi Medical Corporation
    Inventors: Ken Ishikawa, Mitsuru Ikeda, Shigeru Watanabe
  • Patent number: 4596605
    Abstract: In a process for fabricating a static induction transistor having a gate region which is formed in a semiconductor layer including a channel region, ions of an impurity element are implanted into the semiconductor layer from the surface thereof to form the gate region. Ions of an element lighter than the impurity element are implanted into the gate region from the surface of the semiconductor layer in such a way that the concentration of the light element exhibits a plurality of profiles in the depth direction of the semiconductor layer. The semiconductor layer is annealed at a relatively low temperature after the two implanting steps to form the gate region in the semiconductor layer. A solid-state image sensor device is fabricated by using the static induction transistor as a picture cell.
    Type: Grant
    Filed: December 14, 1983
    Date of Patent: June 24, 1986
    Inventors: Junichi Nishizawa, Sohbe Suzuki, Mitsuru Ikeda, Hideki Mutoh
  • Patent number: 4569068
    Abstract: An X-ray lithography apparatus wherein a linear X-ray source is formed by line scanning a target with electron lines, a band-slit having slits which extend in the direction similar to the longitudinal direction of said linear X-ray source and a solar-slit having plural slits in the direction perpendicular to said band-slit are interposed between the X-ray source and a wafer in order to irradiate only the component which is substantially perpendicular to the surface of the wafer out of the X-ray generated from the linear source, and said wafer is made to move continuously or stepwise in respect of a rectangular region which is highly collimated in order to conduct X-ray transfer against a predetermined region.
    Type: Grant
    Filed: April 6, 1984
    Date of Patent: February 4, 1986
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Mitsuru Ikeda, Mitsunori Suzuki, Teruo Someya
  • Patent number: 4126032
    Abstract: A system for determining photo-chemical reaction heat evolved from a sample material irradiated with radiant energy comprises a calorimeter having a pair of sample holders connected to heat-leakage type thermo-electric elements which develop electric output signals proportionate to the amount of heat energy conducted therethrough. Both sample holders are initially irradiated with radiant energy before disposing the sample material thereon to heat the sample holders and thereby develop electric output reference signals. The amount of radiant energy being irradiated on at least one of the sample holders is then selectively adjusted to effectively compensate for any difference between the two reference signals.
    Type: Grant
    Filed: March 16, 1977
    Date of Patent: November 21, 1978
    Assignees: Kabushiki Kaisha Daini Seikosha, Fuji Film Co., Ltd.
    Inventors: Mitsuru Ikeda, Teppei Ikeda, Yoshihiko Teramoto, Masatoshi Yasutake, Yoshimi Nakamine