Abstract: An apparatus for processing a substrate is disclosed. The apparatus includes a polishing section configured to polish a substrate, a transfer mechanism configured to transfer the substrate, and a cleaning section configured to clean and dry the polished substrate. The cleaning section has plural cleaning lines for cleaning plural substrates. The plural cleaning lines have plural cleaning modules and plural transfer robots for transferring the substrates.

Abstract: A substrate cleaning device 1 includes a substrate holding unit 10 configured to hold a substrate W, a first cleaning unit 11 having a first cleaning member 11a caused to come into contact with a first surface WA of the substrate W held by the substrate holding unit 10 to clean the first surface WA, a second cleaning unit 12 having a second cleaning member 12a caused to come into contact with the first surface WA of the substrate W held by the substrate holding unit 10 to clean the first surface WA, and a controller 50 configured to control the first and second cleaning units 11, 12 so that, when any one of the first cleaning member 11a and the second cleaning member 12a cleans the first surface WA of the substrate W held by the substrate holding unit 10, the other cleaning member is at a position apart from the substrate W held by the substrate holding unit 10.

Abstract: A substrate holding apparatus capable of reducing an amount of deflection of a substrate, such as a wafer, is disclosed. The substrate holding apparatus includes: a plurality of chucks configured to hold a peripheral edge of a substrate; at least one support member disposed below the substrate; and an actuating device configured to bring the chucks into contact with the peripheral edge of the substrate while elevating the support member to bring the support member into contact with a lower surface of the substrate, and configured to move the chucks in a direction away from the peripheral edge of the substrate while lowering the support member to separate the support member away from the lower surface of the substrate.

Abstract: A substrate processing apparatus has a substrate rotating device 10, 20 for holding and rotating a substrate W, a cleaning device 41 configured to clean a substrate W which is rotated by the substrate rotating device 10, 20 at predetermined rotating speed, a movement device 42 configured to move the cleaning device 41 between a cleaning position P3 and a separate position P2, and a control unit 64. The control unit 64 controls the movement device 42 so that the cleaning device 41 located at the separate position P2 starts moving toward the cleaning position P3 before a rotating speed of the substrate W held by the substrate rotating device 10, 20 reaches the predetermined rotating speed and the cleaning device 41 reaches the cleaning position P3 after a rotating speed of the substrate W reaches the predetermined rotating speed. Therefore, it is possible to improve the throughput in the substrate cleaning step.

Abstract: An apparatus for processing a substrate is disclosed. The apparatus includes a polishing section configured to polish a substrate, a transfer mechanism configured to transfer the substrate, and a cleaning section configured to clean and dry the polished substrate. The cleaning section has plural cleaning lines for cleaning plural substrates. The plural cleaning lines have plural cleaning modules and plural transfer robots for transferring the substrates.

Abstract: The present invention is intended to provide a seismic isolation device which, regardless of a load to be supported, is capable of reducing acceleration through lengthening a natural period of an upper structure, with excellent vibration energy absorbing capacity by obtaining a properly preferable frictional force as well as a returning characteristic, and others.

Abstract: An apparatus for processing a substrate is disclosed. The apparatus includes a polishing section configured to polish a substrate, a transfer mechanism configured to transfer the substrate, and a cleaning section configured to clean and dry the polished substrate. The cleaning section has plural cleaning lines for cleaning plural substrates. The plural cleaning lines have plural cleaning modules and plural transfer robots for transferring the substrates.

Abstract: The present invention relates to a substrate gripping apparatus includes a base, a plurality of support posts which are vertically movable relative to the base, a lifting mechanism configured to lift the support posts, and a substrate holder and a substrate guide member mounted to each of the support posts. Each of the support posts includes a relative movement mechanism configured to move the substrate holder in such a direction that the substrate holder releases a peripheral portion of a substrate, while raising the substrate guide member relative to the substrate holder, when the support post moves upward, and to move the substrate holder in such a direction that the substrate holder grips the peripheral portion of the substrate, while lowering the substrate guide member relative to the substrate holder, when the support post moves downward.

Abstract: A polishing apparatus is used for polishing a surface of a substrate such as a semiconductor wafer to planarize the surface of the substrate. The polishing apparatus includes a polishing table having a polishing surface, and a top ring configured to hold a substrate with an outer circumferential edge of the substrate surrounded by a retainer ring and to press the substrate against the polishing surface. The top ring is movable between a polishing position above the polishing table, a position laterally of the polishing table, and a cleaning position. The polishing apparatus includes a cleaning unit disposed in the cleaning position and configured to eject a cleaning liquid toward the lower surface of the top ring, which is being rotated, thereby cleaning the substrate held by the top ring together with the lower surface of the top ring.

Abstract: A substrate processing apparatus has a cleaning section for cleaning a substrate such as a semiconductor wafer and can be used as a polishing apparatus. The substrate processing apparatus includes a first cleaning chamber which houses at least one first cleaning module and two second cleaning modules arranged in a vertical array, a second cleaning chamber which houses two third cleaning modules arranged in a vertical array, and a first transport robot housed in a first transport chamber disposed between the first cleaning chamber and the second cleaning chamber. The first transport robot is configured to transfer substrates between the first cleaning module, the second cleaning modules, and the third cleaning modules.

Abstract: An active dynamic vibration absorber 1 includes a weight 2; a frame 3 which is adjacent to the weight 2 in such a manner as to surround the weight 2 with clearances X1 and Y1; a holding mechanism 4 which is interposed between the weight 2 and the frame 3 and holds the weight 2 movably in an X direction with respect to the frame 3, while holding the weight 2 immovably in a Y direction and a vertical direction V; a detecting means 5 for detecting the relative vibration of a predetermined value in the X direction of the weight 2 with respect to the frame 3; and a moving means 6 for relatively moving the weight 2 in the X direction with respect to the frame 3 on the basis of a detection signal from the detecting means 5 such that the relative movement of the weight 2 in the X direction with respect to the frame 3 is allowed, while the vibrational displacement of the weight 2 in the X direction with respect to the frame 3 is reduced.

Abstract: A substrate processing method includes jetting at least one fluid from a fluid nozzle toward a rotating substrate surface while moving the fluid nozzle from a center toward a periphery of the rotating substrate. The fluid nozzle is moved from the center of the substrate to a predetermined point at a constant initial movement speed. The fluid nozzle is subsequently moved from the predetermined point at a movement speed V(r) which satisfies the following relational expression: V(r)×r?=C (constant), where V(r) represents the movement speed of the fluid nozzle when it passes a position corresponding to a position on the substrate surface at a distance “r” from the center of the substrate, and ? represents a power index.

Abstract: A substrate processing apparatus can prevent photo-corrosion of, e.g., copper interconnects due to exposure of a surface to be processed of a substrate to light, and can perform processing, such as cleaning, of a substrate surface while preventing photo-corrosion of, e.g., copper interconnects due to exposure to light. The substrate processing apparatus includes a plurality of processing areas housing therein processing units which have been subjected to light shielding processing; and at least one transfer area housing therein a transfer robot and disposed between two adjacent ones of the plurality of processing areas. A light shielding wall is provided between the transfer area and each of the two adjacent processing areas, and a light-shielding maintenance door is provided for the front opening of the transfer area. The processing units are coupled to the light shielding walls in a light-shielding manner.

Abstract: An active dynamic vibration absorber 1 includes a weight 2; a frame 3 which is adjacent to the weight 2 in such a manner as to surround the weight 2 with clearances X1 and Y1; a holding mechanism 4 which is interposed between the weight 2 and the frame 3 and holds the weight 2 movably in an X direction with respect to the frame 3, while holding the weight 2 immovably in a Y direction and a vertical direction V; a detecting means 5 for detecting the relative vibration of a predetermined value in the X direction of the weight 2 with respect to the frame 3; and a moving means 6 for relatively moving the weight 2 in the X direction with respect to the frame 3 on the basis of a detection signal from the detecting means 5 such that the relative movement of the weight 2 in the X direction with respect to the frame 3 is allowed, while the vibrational displacement of the weight 2 in the X direction with respect to the frame 3 is reduced.

Abstract: A substrate processing method and apparatus can securely carry out a pre-plating treatment that enables uniform plating in the necessary area of the surface of a substrate. The substrate processing method carries out a cleaning treatment and a catalyst-imparting treatment of a surface of a substrate as pre-plating treatments and then electroless plates a metal film on the catalyst-imparted surface of the substrate. The cleaning treatment is carried out in a wider area of the surface of the substrate than that area to which a catalyst is imparted by the catalyst-imparting treatment.

Abstract: A substrate polishing apparatus includes a substrate holding mechanism having a head for holding a substrate to be polished, and a polishing mechanism including a polishing table with a polishing pad mounted thereon. The substrate held by the head is pressed against the polishing pad on the polishing table to polish the substrate by relative movement of the substrate and the polishing pad. The substrate polishing apparatus also includes a substrate transfer mechanism for delivering the substrate to be polished to the head and receiving the polished substrate. The substrate transfer mechanism includes a substrate to-be-polished receiver for receiving the substrate to be polished, and a polished substrate receiver for receiving the substrate which has been polished.

Abstract: The present invention is intended to provide a seismic isolation device which, regardless of a load to be supported, is capable of reducing acceleration through lengthening a natural period of an upper structure, with excellent vibration energy absorbing capacity by obtaining a properly preferable frictional force as well as a returning characteristic, and others.

Abstract: A substrate processing method and apparatus can securely carry out a pre-plating treatment that enables uniform plating in the necessary area of the surface of a substrate. The substrate processing method carries out a cleaning treatment and a catalyst-imparting treatment of a surface of a substrate as pre-plating treatments and then electroless plates a metal film on the catalyst-imparted surface of the substrate. The cleaning treatment is carried out in a wider area of the surface of the substrate than that area to which a catalyst is imparted by the catalyst-imparting treatment.

Abstract: A damper includes a hollow outer elongated body; a hollow inner elongated body; a liquid viscous body or liquid viscoelastic body disposed in a gap between an inner surface of the elongated body and an outer surface of the elongated body in such a manner as to be in contact with the inner surface and the outer surface of these elongated bodies, respectively; and first and second attaching structures. Further, a controller may be provided to control an increase or decrease in the internal pressure of the liquid viscous body or the liquid viscoelastic body.

Abstract: A substrate polishing apparatus includes a substrate holding mechanism having a head for holding a substrate to be polished, and a polishing mechanism including a polishing table with a polishing pad mounted thereon. The substrate held by the head is pressed against the polishing pad on the polishing table to polish the substrate by relative movement of the substrate and the polishing pad. The substrate polishing apparatus also includes a substrate transfer mechanism for delivering the substrate to be polished to the head and receiving the polished substrate. The substrate transfer mechanism includes a substrate to-be-polished receiver for receiving the substrate to be polished, and a polished substrate receiver for receiving the substrate which has been polished.