Abstract: It is an object of the present invention to provide a variable gain amplifier of which impedance does not change when gains are switched. A transistor is turned on in a high-gain state and transistors are turned on in a low-gain state to switch between the gains, the area of the transistor is made equal to the area of the transistor to keep the same output load conditions and the same output impedance both in the high-gain state and the low-gain state. While the input impedance of a transistor becomes high because the transistor in a high-gain path is turned off in the low-gain mode, current passes through a transistor to lower the impedance of the collector of a transistor and, as a result, the input impedance is kept the same both in the high-gain state and the low-gain state.

Abstract: The diode of the present invention includes: a cathode electrode and an anode electrode that are disposed on a semiconductor substrate and are spaced apart from each other; and a shielding metal member placed between the cathode and anode electrodes.

Abstract: The present invention provides a surface material comprising a fibrous structure having a weight average single fiber thickness of from 0.0001 to 1 dtex, a thickness of from 0.10 to 5 mm and a unit weight of from 50 to 500 g/m2, and disposed on a surface of a body in order to convert at least a part of a surface wave, generated on the surface of the body by vibration of the body, into a vibration of the fibrous structure, and a method for suppressing the influence due to the surface wave. In the present invention, by disposing the surface material on surfaces of various members receiving vibration, a modulation of the vibration originating from the surface wave which greatly influences a human acoustic sense can be efficiently suppressed, and a sound quality and an image quality can be prevented from being deteriorated.

Abstract: A high frequency apparatus includes a dielectric substrate having a surface including a first area and at least one second area; a first dielectric thin layer provided on a portion of a first area; and a uniplanar transmission line provided on the first dielectric thin layer and on a portion of the second area, the uniplanar transmission line extending, continuously on the second area and the first dielectric thin layer.

Abstract: The present invention enables management of the copyright of content to which identification information is not added. An arithmetical unit 206 computes a hash value based on the data of a portion of content data recorded in an MD 209, and transmits the value from an input/output unit 201 to a personal computer. Based on the hash value, the personal computer identifies the content recorded in the MD 209, and performs management based on the display information of check-in and check-out of the content. The present invention can be applied to personal computers.

Abstract: A high frequency apparatus includes a dielectric substrate having a surface including a first area and at least one second area; a first dielectric thin layer provided on a portion of a first area; and a uniplanar transmission line provided on the first dielectric thin layer and on a portion of the second area, the uniplanar transmission line extending, continuously on the second area and the first dielectric thin layer.

Abstract: An undoped In0.52Al0.48As buffer layer (thickness: 500 nm), an undoped In0.53Ga0.47As channel layer (thickness: 30 nm), an n-type delta doped layer for shortening the distance between the channel layer and a gate electrode and attaining a desired carrier density, an undoped In0.52Al0.48As Schottky layer, and an n-type In0.53Ga0.47As cap layer doped with Si (thickness: 50 nm) are formed in this order on the principal surface of an Fe-doped InP semi-insulating substrate. An n-type GaAs protective layer doped with Si (thickness: 7.5 nm) is formed between the cap layer and source/drain electrodes for protecting the cap layer.

Abstract: A bipolar transistor device having first and second semiconductor layers each formed on a substrate and composed of a Group III-V compound semiconductor of a first conductivity type and a third semiconductor layer formed between the first and second semiconductor layers and composed of a group IV semiconductor of a second conductivity type.

Abstract: An information processing apparatus, an information processing method, and a storage medium are disclosed which determines whether or not to install program modules by acquiring environment information relevant to the types of the modules so that only those modules judged compatible with the environment of interest may be installed. This makes it possible for users to install only necessary program modules without becoming aware of specific conditions restricting the installation of the modules.

Abstract: It is an object of the present invention to provide a variable gain amplifier of which impedance does not change when gains are switched. A transistor is turned on in a high-gain state and transistors are turned on in a low-gain state to switch between the gains, the area of the transistor is made equal to the area of the transistor to keep the same output load conditions and the same output impedance both in the high-gain state and the low-gain state. While the input impedance of a transistor becomes high because the transistor in a high-gain path is turned off in the low-gain mode, current passes through a transistor to lower the impedance of the collector of a transistor and, as a result, the input impedance is kept the same both in the high-gain state and the low-gain state.

Abstract: An undoped In0.52Al0.48As buffer layer (thickness: 500 nm), an undoped In0.53Ga0.47As channel layer (thickness: 30 nm), an n-type delta doped layer for shortening the distance between the channel layer and a gate electrode and attaining a desired carrier density, an undoped In0.52Al0.48As Schottky layer, and an n-type In0.53Ga0.47As cap layer doped with Si (thickness: 50 nm) are formed in this order on the principal surface of an Fe-doped InP semi-insulating substrate. An n-type GaAs protective layer doped with Si (thickness: 7.5 nm) is formed between the cap layer and source/drain electrodes for protecting the cap layer.

Abstract: The diode of the present invention includes: a cathode electrode and an anode electrode that are disposed on a semiconductor substrate and are spaced apart from each other; and a shielding metal member placed between the cathode and anode electrodes.

Abstract: There is provided a personal computer which increments and thereby restores a lendable number upon receiving a content returned from a portable device, and which confirms the return of the content and increments the lendable number even when the portable device does not have or deletes the content borrowed from the personal computer before returning the content.

Abstract: The present invention has an object to provide a high frequency integrated device which can obtain sufficient isolation even in a high frequency region of which handling frequency exceeds gigalhertz[GHz]. In a semiconductor device having an element isolation structure obtained by trench isolation, in which an insulator fills the inside of a trench formed in a semiconductor substrate, the insulator filling the trench includes a conductive material region, and the conductive material region is grounded through coupling at high frequency. With this configuration, electromagnetic waves coupled to the conductive material inside the trench are propagated to ground, thereby preventing high-frequency interference with other regions.

Abstract: The diode of the present invention includes: a cathode electrode and an anode electrode that are disposed on a semi-conductor substrate and are spaced apart from each other; and a shielding metal member placed between the cathode and anode electrodes.

Abstract: A music piece managing unit judges whether or not a music piece file name corresponding to a music piece ID received from a playing processing unit exists in a corresponding music piece file storing unit, and in the event that judgment is made that the file name does not exist, a drive letter in the obtained file name is changed to the drive letter of a currently-connected drive, thereby generating a new file name. The music piece managing unit then judges whether or not the newly-generated file name exists in the corresponding music piece file storing unit, and in the event that judgment is made that the file name exists, the file name of the music piece is updated to the newly-generated file name. Thus, music piece files can be readily searched for, even in the event that the configuration of the drives has been changed.

Abstract: A microstrip line includes a ground conductor layer, a dielectric layer formed on the ground conductor layer, and a linear conductor layer formed on the dielectric layer to have a linear configuration. The linear conductor layer has a wider portion in the upper part of a cross section thereof taken in a direction perpendicular to the direction in which the linear conductor layer extends and a narrower portion in the lower part of the cross section. The narrower portion is smaller in width than the wider portion.

Abstract: In order to obtain coded data which does not strike viewers and listeners as being incongruous, when plural audio data are to be coded, a coding program groups the respective audio data into one audio data, codes the grouped audio data in sequence with a predetermined number of samples being treated as units, and sets delimitations corresponding to the delimitations of the plural audio data in the coded data at coding units of the coded data.

Abstract: A first resist film for EB exposure, a buffer film, and a second resist film for i-line exposure are applied sequentially onto a substrate. Thereafter, the second resist film and the buffer film are subjected to patterning for forming a first opening. Then, dry etching is performed with respect to the first resist film masked with the second resist film to transfer the pattern of the second resist film to the first resist film and thereby form a second opening in the first resist film. Subsequently, a third resist film of chemically amplified type is applied to the entire surface of the first resist film to form a mixing layer in conjunction with the first resist film. As a result, the wall faces of the second opening are covered with the mixing layer and the width of the second opening is thereby reduced.

Abstract: A lower resist film, which is made of PMMA for EB exposure and has a thickness of about 200 nm, is applied onto a substrate, and then an upper resist film to be exposed to i-rays is applied on the lower resist film. Thereafter, a mixed layer, in which the upper and lower resist films are mixed, is formed in the interface between the upper and lower resist films. Next, the upper resist film, except for the head-forming region thereof, is exposed to i-rays and developed, thereby forming an upper-layer opening. And then the mixed layer and a leg-forming region of the lower resist film are exposed to EB and developed, thereby forming a lower-layer opening having an upper part like a taper progressively expanding upward.