Abstract: A semiconductor surface light-emitting device comprises, in a multi-layered structure formed on a substrate, a light-emitting part surrounded by a groove or grooves, provided with an active layer, a vertical cavity and a current aperture, a peripheral part external to the grooves, and a connecting portion connecting the light-emitting part with the peripheral part. There is provided an empty space or a high-resistance region on the upper part of this multi-layered connecting portion, which includes at least the current aperture formed layer or the active layer. This configuration effectively eliminates a path for a leakage current flowing into the peripheral part from the light-emitting part.

Abstract: A method of manufacturing a compound layer, containing a nitrified metal as a mayor component thereof and having a predetermined microstructure pattern, includes: an ion implantation step for implanting hydrogen ions into a predetermined region of a compound layer formed on a substrate to form an implanted region; and an etching step for selectively etching the implanted region by using a gas containing at least oxygen, to remove the implanted region of the compound layer while maintaining the other region as a microstructure pattern. By introducing a halogen element like fluorine in addition to hydrogen, fabrication of the pattern can be executed more reliably and more easily. As a result, volatility of reaction products produced upon etching the compound layer is enhanced, and micro-loading effects are suppressed.

Abstract: A method of manufacturing a compound layer, containing a nitrified metal as a major component thereof and having a predetermined microstructure pattern, includes: an ion implantation step for implanting hydrogen ions into a predetermined region of a compound layer formed on a substrate to form an implanted region; and an etching step for selectively etching the implanted region by using a gas containing at least oxygen, to remove the implanted region of the compound layer while maintaining the other region as a microstructure pattern. By introducing a halogen element like fluorine in addition to hydrogen, fabrication of the pattern can be executed more reliably and more easily. As a result, volatility of reaction products produced upon etching the compound layer is enhanced, and micro-loading effects are suppressed.

Abstract: A semiconductor surface light-emitting device comprises, in a multi-layered structure formed on a substrate, a light-emitting part surrounded by a groove or grooves, provided with an active layer, a vertical cavity and a current aperture, a peripheral part external to the grooves, and a connecting portion connecting the light-emitting part with the peripheral part. There is provided an empty space or a high-resistance region on the upper part of this multi-layered connecting portion, which includes at least the current aperture formed layer or the active layer. This configuration effectively eliminates a path for a leakage current flowing into the peripheral part from the light-emitting part.

Abstract: A method of manufacturing a compound layer, containing a nitrified metal as a major component thereof and having a predetermined microstructure pattern, includes: an ion implantation step for implanting hydrogen ions into a predetermined region of a compound layer formed on a substrate to form an implanted region; and an etching step for selectively etching the implanted region by using a gas containing at least oxygen, to remove the implanted region of the compound layer while maintaining the other region as a microstructure pattern. By introducing a halogen element like fluorine in addition to hydrogen, fabrication of the pattern can be executed more reliably and more easily. As a result, volatility of reaction products produced upon etching the compound layer is enhanced, and micro-loading effects are suppressed.

Abstract: A mask of certain type has a transparent base and a transparent film formed on the transparent base. The transparent film has at least one mask member formed in a predetermined mask pattern and having a relatively low exposure beam transparency. The mask member sometimes has a placement error from a designed placement. This is mainly because an in-plane stress distribution of the transparent film is nonuniformity. The transparent film is partially decreased in thickness to unity the in-plane stress distribution.

Abstract: In an X-ray exposure method of this invention, an X-ray mask unit in which a patterned X-ray absorber is formed on a membrane is supported. This patterned X-ray absorber contains one of an element having a density/atomic weight of 0.085 [g/cm3] or more and an L-shell absorption edge at a wavelength of 0.75 to 1.6 nm and an element having a density/atomic weight of 0.04 [g/cm3] or more and an M-shell absorption edge at a wavelength of 0.75 to 1.6 nm. Synchrotron radiation having maximum light intensity at a wavelength of 0.6 to 1 nm is applied onto the X-ray mask unit. This improves the exposure accuracy in X-ray exposure.

Abstract: In an X-ray exposure method of this invention, an X-ray mask unit in which a patterned X-ray absorber is formed on a membrane is supported. This patterned X-ray absorber contains one of an element having a density/atomic weight of 0.085 [g/cm3] or more and an L-shell absorption edge at a wavelength of 0.75 to 1.6 nm and an element having a density/atomic weight of 0.04 [g/cm3] or more and an M-shell absorption edge at a wavelength of 0.75 to 1.6 nm. Synchrotron radiation having maximum light intensity at a wavelength of 0.6 to 1 nm is applied onto the X-ray mask unit. This improves the exposure accuracy in X-ray exposure.

Abstract: A method of manufacturing a compound layer, containing a nitrified metal as a major component thereof and having a predetermined microstructure pattern, includes: an ion implantation step for implanting hydrogen ions into a predetermined region of a compound layer formed on a substrate to form an implanted region; and an etching step for selectively etching the implanted region by using a gas containing at least oxygen, to remove the implanted region of the compound layer while maintaining the other region as a microstructure pattern. By introducing a halogen element like fluorine in addition to hydrogen, fabrication of the pattern can be executed more reliably and more easily. As a result, volatility of reaction products produced upon etching the compound layer is enhanced, and micro-loading effects are suppressed.