Abstract: A method of calibration for a vehicle comprises: obtaining speed data from at least one vehicle controller of the vehicle during travel; determining that the speed data satisfies a speed threshold; while the speed threshold is satisfied, and from a light detection and ranging (LiDAR) of the vehicle, collecting first and second pluralities of LIDAR data frames; calculating a first yaw angle using the first plurality of LIDAR data frames; calculating a second yaw angle using the second plurality of LIDAR data frames; determining whether the first and second yaw angles satisfy a consistency criterion; in response to the consistency criterion being satisfied, determining a third yaw angle for the LiDAR using the first and second yaw angles; and calibrating the LiDAR using the third yaw angle.

Abstract: A method of detecting L-shaped target objects within a point cloud includes rotating a target point cloud through a plurality of rotation angles and generating at least one weighted histogram for each of the plurality of rotation angles, wherein the weighted histogram includes a first plurality of bins, each bin having a width defined in a first axis, wherein each bin is weighted based on a number of points located within the bin and a distance between points in a direction perpendicular to a width of the bin. A score is generated for each of the plurality of rotation angles based on the at least one weighted histogram and determining whether a target point cloud is L-shaped based on the generated scores.

Abstract: A transistor includes a III-N channel layer; a III-N barrier layer on the III-N channel layer; a source contact and a drain contact, the source and drain contacts electrically coupled to the III-N channel layer; an insulator layer on the III-N barrier layer; a gate insulator partially on the insulator layer and partially on the III-N channel layer, the gate insulator including an amorphous Al1-xSixO layer with 0.2<x<0.8; and a gate electrode over the gate insulator, the gate electrode being positioned between the source and drain contacts.

Abstract: A method of detecting L-shaped target objects within a point cloud includes rotating a target point cloud through a plurality of rotation angles and generating at least one weighted histogram for each of the plurality of rotation angles, wherein the weighted histogram includes a first plurality of bins, each bin having a width defined in a first axis, wherein each bin is weighted based on a number of points located within the bin and a distance between points in a direction perpendicular to a width of the bin. A score is generated for each of the plurality of rotation angles based on the at least one weighted histogram and determining whether a target point cloud is L-shaped based on the generated scores.

Abstract: A transistor includes a III-N channel layer; a III-N barrier layer on the III-N channel layer; a source contact and a drain contact, the source and drain contacts electrically coupled to the III-N channel layer; an insulator layer on the III-N barrier layer; a gate insulator partially on the insulator layer and partially on the III-N channel layer, the gate insulator including an amorphous Al1-xSixO layer with 0.2<x<0.8; and a gate electrode over the gate insulator, the gate electrode being positioned between the source and drain contacts.

Abstract: A method of fabricating a III-N device includes forming a III-N channel layer on a substrate, a III-N barrier layer on the channel layer, an insulator layer on the barrier layer, and a trench in a first portion of the device. Forming the trench comprises removing the insulator layer and a part of the barrier layer in the first portion of the device, such that a remaining portion of the barrier layer in the first portion of the device has a thickness away from a top surface of the channel layer, the thickness being within a predetermined thickness range, annealing the III-N device in a gas ambient including oxygen at an elevated temperature to oxidize the remaining portion of the barrier layer in the first portion of the device, and removing the oxidized remaining portion of the barrier layer in the first portion of the device.

Abstract: A method of fabricating a III-N device includes forming a III-N channel layer on a substrate, a III-N barrier layer on the channel layer, an insulator layer on the barrier layer, and a trench in a first portion of the device. Forming the trench comprises removing the insulator layer and a part of the barrier layer in the first portion of the device, such that a remaining portion of the barrier layer in the first portion of the device has a thickness away from a top surface of the channel layer, the thickness being within a predetermined thickness range, annealing the III-N device in a gas ambient including oxygen at an elevated temperature to oxidize the remaining portion of the barrier layer in the first portion of the device, and removing the oxidized remaining portion of the barrier layer in the first portion of the device.

Abstract: A method of fabricating a III-N device includes forming a III-N channel layer on a substrate, a III-N barrier layer on the channel layer, an insulator layer on the barrier layer, and a trench in a first portion of the device. Forming the trench comprises removing the insulator layer and a part of the barrier layer in the first portion of the device, such that a remaining portion of the barrier layer in the first portion of the device has a thickness away from a top surface of the channel layer, the thickness being within a predetermined thickness range, annealing the III-N device in a gas ambient including oxygen at an elevated temperature to oxidize the remaining portion of the barrier layer in the first portion of the device, and removing the oxidized remaining portion of the barrier layer in the first portion of the device.

Abstract: A method of fabricating a III-N device includes forming a III-N channel layer on a substrate, a III-N barrier layer on the channel layer, an insulator layer on the barrier layer, and a trench in a first portion of the device. Forming the trench comprises removing the insulator layer and a part of the barrier layer in the first portion of the device, such that a remaining portion of the barrier layer in the first portion of the device has a thickness away from a top surface of the channel layer, the thickness being within a predetermined thickness range, annealing the III-N device in a gas ambient including oxygen at an elevated temperature to oxidize the remaining portion of the barrier layer in the first portion of the device, and removing the oxidized remaining portion of the barrier layer in the first portion of the device.

Abstract: The present invention, which enables to align a liquid crystal molecule, when no voltage is applied thereto, and also to control pretilt angle of the liquid crystal molecule, relates to a composition for a liquid crystal alignment film comprising components represented by the following (A) to (D): (A) a meta-phenylene diamine derivative represented by the general formula [1]; (B) a meta-phenylene diamine derivative represented by the general formula [2]; (C) a para-arylene diamine represented by the general formula [3]; (D) a tetracarboxylic acid represented by the general formula [4] or a tetracarboxylic acid anhydride represented by the general formula [4?]; (wherein R1 represents an alkyl group having 1 to 6 carbon atoms or the like, R2 represents an alkyl group having 8 to 20 carbon atoms or the like, t moieties of Ra represent an alkyl group having 1 to 3 carbon atoms or the like, n represents an integer of 1 to 3, t represents an integer of 0 to 4, T represents an oxygen atom or the like, Y repre