Abstract: A remote plasma source is disclosed that includes a core element and a first plasma block including one or more surfaces at least partially enclosing an annular-shaped plasma generating region that is disposed around a first portion of the core element. The remote plasma source further comprises one or more coils disposed around respective second portions of the core element. The remote plasma source further includes an RF power source configured to drive a RF power signal onto the one or more coils that is based on a determined impedance of the plasma generating region. Energy from the RF power signal is coupled with the plasma generating region via the one or more coils and the core element.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: Embodiments of the present invention relate to apparatus for improving uniformity and film stress of films deposited during plasma process of a substrate. According to embodiments, the apparatus includes a tuning electrode and/or a tuning ring electrically coupled to a variable capacitor for tuning high frequency RF impedance of the electrode and a low frequency RF termination to ground. The plasma profile and resulting film thickness can be controlled by adjusting the capacitance of the variable capacitor and the resulting impedance of the tuning electrode. The film stress of the film deposited on the substrate can be controlled, i.e., increased, by terminating the low frequency RF during processing.

Abstract: Embodiments of the present invention relate to apparatus for enhancing deposition rate and improving a plasma profile during plasma processing of a substrate. According to embodiments, the apparatus includes a tuning electrode disposed in a substrate support pedestal and electrically coupled to a variable capacitor. The capacitance is controlled to control the RF and resulting plasma coupling to the tuning electrode. The plasma profile and the resulting deposition rate and deposited film thickness across the substrate are correspondingly controlled by adjusting the capacitance and impedance at the tuning electrode.

Abstract: An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: Embodiments of the present invention relate to apparatus for enhancing deposition rate and improving a plasma profile during plasma processing of a substrate. According to embodiments, the apparatus includes a tuning electrode disposed in a substrate support pedestal and electrically coupled to a variable capacitor. The capacitance is controlled to control the RF and resulting plasma coupling to the tuning electrode. The plasma profile and the resulting deposition rate and deposited film thickness across the substrate are correspondingly controlled by adjusting the capacitance and impedance at the tuning electrode.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A plasma source is provided including a core element extending from a first end to a second end along a first axis. The plasma source further includes one or more coils disposed around respective one or more first portions of the core element. The plasma source further includes a plasma block having one or more interior walls at least partially enclosing an annular plasma-generating volume that is disposed around a second portion of the core element. The annular plasma-generating volume includes a first region that is symmetrical about a plurality of perpendicular axes that are perpendicular to a first point positioned on the first axis, the first region having a width in a direction parallel to the first axis and a depth in a direction perpendicular from the first axis. The first region has a width that is at least three times greater than the depth of the first region.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A plasma source is provided including a core element extending from a first end to a second end along a first axis. The plasma source further includes one or more coils disposed around respective one or more first portions of the core element. The plasma source further includes a plasma block having one or more interior walls at least partially enclosing an annular plasma-generating volume that is disposed around a second portion of the core element. The annular plasma-generating volume includes a first region that is symmetrical about a plurality of perpendicular axes that are perpendicular to a first point positioned on the first axis, the first region having a width in a direction parallel to the first axis and a depth in a direction perpendicular from the first axis. The first region has a width that is at least three times greater than the depth of the first region.

Abstract: Embodiments of the present disclosure generally relate to methods for detecting unstable plasma in a substrate processing chamber. In one embodiment, the method includes providing a forward power from a power source to the substrate processing chamber through a detection device, splitting the forward power passing through the detection device at a predetermined ratio to obtain a first value of the power to the substrate processing chamber, measuring a reflected power from the substrate processing chamber to obtain a second value of the power from the substrate processing chamber, and directing the power source to turn off the forward power if the second value of the power is different than the first value of the power.

Abstract: An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.

Abstract: The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.

Abstract: Embodiments of the present disclosure generally relate to methods for detecting unstable plasma in a substrate processing chamber. In one embodiment, the method includes providing a forward power from a power source to the substrate processing chamber through a detection device, splitting the forward power passing through the detection device at a predetermined ratio to obtain a first value of the power to the substrate processing chamber, measuring a reflected power from the substrate processing chamber to obtain a second value of the power from the substrate processing chamber, and directing the power source to turn off the forward power if the second value of the power is different than the first value of the power.

Abstract: A remote plasma source is disclosed that includes a core element and a first plasma block including one or more surfaces at least partially enclosing an annular-shaped plasma generating region that is disposed around a first portion of the core element. The remote plasma source further comprises one or more coils disposed around respective second portions of the core element. The remote plasma source further includes an RF power source configured to drive a RF power signal onto the one or more coils that is based on a determined impedance of the plasma generating region. Energy from the RF power signal is coupled with the plasma generating region via the one or more coils and the core element.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.