Abstract: Method for producing a connection structure passing through a flexible substrate, in particular a plastic substrate, comprising: producing a hole passing through the thickness of the substrate, depositing in the hole a first conductive ink having a first viscosity, so as to form a conductive layer on at least one wall of the hole, depositing in the hole a second conductive ink having a second viscosity greater than the first viscosity, so as to fill the hole.

Abstract: An electronic circuit, including a substrate made of a first polymer having a first glass transition temperature lower than 200° C., the substrate having first and second opposite surfaces; a first layer or first tracks of a second polymer on the first surface; a second layer or second tracks of the second polymer or of a third polymer on the second surface, the second and third polymers being different from the first polymer and having a second glass transition temperature higher than 200° C.; and third electrically-conductive tracks on the first layer or the first tracks.

Abstract: An electronic device having at least a first portion including a metal oxide that is in contact with a second portion including the said metal oxide, the first portion being semiconducting and the second portion being electrically insulating.

Abstract: An optoelectronic device includes a stack of layers that are arranged on an electrically insulating substrate, including at least one cathode made of a material of work function ?1; one electron-collecting layer that is arranged above the cathode and that is made of a material of work function ?2 and of sheet resistance R; and one active layer comprising at least one p-type organic semiconductor the energy level of which is HO1, wherein the work function ?2 of the electron-collecting layer and the energy level HO1 of the active layer form a potential barrier able to block the injection of holes from the cathode into the active layer; and the sheet resistance R of the electron-collecting layer is higher than or equal to 108?.

Abstract: The invention relates to a manufacturing process of a pixel array of a thermal pattern sensor comprising the steps of: providing a substrate; depositing a first layer of electrically conductive material, including depositing electrically conductive tracks, depositing of connector pins and depositing a ground strip; depositing of second layer of pyroelectric material covering the tracks and leaving at least part of the connector pins free; depositing of third layer of electrically conductive material; depositing of fourth layer of dielectric material in contact with the third layer; depositing of a fifth layer including electrically conductive heating tracks; depositing of a sixth protective layer, wherein the step of depositing the second and/or third and/or fourth and/or sixth layer is carried out by slot-die coating.

Abstract: A photoresistor comprises two electrodes connected by a photosensitive layer of the photoresistor, and at least one additional layer which is in contact with the photosensitive layer in order to influence the behavior of the photoresistor regarding carrier collection between the two electrodes, in order to improve the sensitivity of the photoresistor.

Abstract: A photodetector is provided, including an active layer configured to generate charge carriers of a first type and of a second type by absorption of electromagnetic radiation; a first electrode configured to collect the charge carriers of the first type; and a second electrode configured to collect the charge carriers of the second type, the first electrode including a layer configured to collect the charge carriers of the first type, the layer including self-assembled monolayers, and nanowires comprising metal and functionalized by the self-assembled monolayers, the self-assembled monolayers of the layer are configured to functionalize the nanowires and to modify a work function of a material forming the nanowires. A method for manufacturing a photodetector and an electrode for a photodetector are also provided.

Abstract: A method for producing a stack, includes the following steps: forming a first layer able to conduct electricity, forming a layer of interest on the first layer, the layer of interest comprising at least one free volume, forming at least one repairing element, each repairing element at least partially filling a free volume, called the free volume of interest, the repairing element comprising at least one insulating layer and leaving free an upper surface of the layer of interest opposite the first layer located outside of the at least one free volume, forming a second layer, able to conduct electricity, on the layer of interest, the second layer covering the repairing element and the free surface, the step of forming the repairing element comprising the following steps: forming, on the layer of interest, a layer that extends at least partially into the free volume of interest, covering at least one portion of the buffer layer located in the volume of interest with a filling layer, the buffer layer and the fill

Abstract: The present application relates to a method for forming an active zone of metal oxide for an electronic component including the formation of a stack of IXZO layers produced by liquid phase deposition on a substrate, the layers of said stack having different atomic fractions to each other in order to make it possible to reduce the annealing temperature enabling them to be made functional.

Abstract: Thermal pattern sensor comprising several pixels located on a substrate, each pixel comprising a pyroelectric capacitor, the pyroelectric capacitor comprising a pyroelectric material located between two electrically conducting electrodes, the pyroelectric material comprising a sol-gel matrix in which first particles made of a first material and second particles made of a second material are dispersed. The first material being chosen from among calcium, lanthanum, tantalum, barium, lead and/or strontium oxides, the second material being chosen from among titanium, antimony, tin, zinc, gallium, vanadium and/or manganese oxides.

Abstract: The invention relates to a heat pattern sensor including a matrix of pyroelectric capacitances. The sensor further includes an electromagnetic shielding stage, electrically conducting, situated between a stage including a pyroelectric material and a contact surface of the sensor. The electromagnetic shielding stage includes a shielding layer which comprises nanowires and/or nanotubes lying in a surrounding medium. The nanowires and/or nanotubes have a thermal conductivity greater than that of the surrounding medium. A ratio between a distribution pitch of the pixels of the matrix of pixels and a thickness of the shielding layer is greater than or equal to 20. The invention makes it possible to obtain at the same time rapid heat transfers through the electromagnetic shielding stage and low lateral heat transfers, from one pixel to the other of the sensor.

Abstract: The invention relates to a heat pattern sensor comprising a matrix of pyroelectric capacitances. The heat pattern sensor further comprises an electromagnetic shielding stage, electrically conducting, situated between a stage including a pyroelectric material and a protective layer of the matrix of pixels. The electromagnetic shielding stage includes an insulating layer, and a plurality of pads distributed in the insulating layer, the pads having a thermal conductivity greater than that of the insulating layer. The invention makes it possible to obtain at one and the same time rapid heat transfers through the electromagnetic shielding stage, and low lateral heat transfers, from one pixel to the other of the sensor.

Abstract: Thermal pattern sensor comprising several pixels arranged on a substrate, each pixel including at least: a pyroelectric capacitance formed by at least one portion of pyroelectric material arranged between at least one lower electrode and at least one upper electrode, with the lower electrode arranged between the substrate and the portion of pyroelectric material, a dielectric layer such that the upper electrode is arranged between the portion of pyroelectric material and the dielectric layer, a heating element including at least one deposition of electrically conductive particles and such that the dielectric layer is arranged between the upper electrode and the heating element, a protective layer arranged between the dielectric layer and the heating element and including at least one material of which the Shore A hardness is greater than or equal to around 60.

Abstract: Thermal pattern sensor comprising several pixels arranged on a substrate, each pixel including at least one pyroelectric capacitance formed by at least one portion of pyroelectric material arranged between at least one lower electrode and at least one upper electrode, with the lower electrode arranged between the substrate and the portion of pyroelectric material, and in which at least one protective dielectric layer is arranged between the portion of pyroelectric material and the upper electrode and comprises at least one of the following materials: fluoropolymer, self-assembled molecular monolayer, dielectric material soluble in a solvent orthogonal to the pyroelectric material.

Abstract: Thermal pattern sensor comprising several pixels located on a substrate, each pixel comprising a pyroelectric capacitance, the pyroelectric capacitance comprising, a layer of porous pyroelectric material located between a first electrically conducting electrode and a second electrically conducting electrode, particles made of a first material at least partially filling the pores of the layer of porous pyroelectric material, the first material being electrically insulating and having pyroelectric properties and a layer made of a second material being placed between the layer made of a pyroelectric material and the second electrode, the second material being electrically insulating and having pyroelectric properties.

Abstract: A method for manufacturing an electroactive actuator is provided. The method includes applying a layer of an electroactive polymer to an electrode surface, crystallizing the electroactive polymer by application of U.V. flash and applying a second electrode onto the crystallized electroactive polymer layer. According to the method a stack of multiple superimposed first electrode layers, electroactive polymer layers and second electrode layers may be obtained.

Abstract: An organic CMOS circuit including a substrate having an N-type organic transistor and a P-type organic transistor formed thereon, the transistors respectively including a layer of N-type semiconductor material and a layer of P-type semiconductor material. A surface of each of the semiconductor material layers, opposite to the substrate, is covered with an anti-ultraviolet layer made of electrically-insulating material absorbing and/or reflecting ultra-violet rays.

Abstract: A matrix-array optoelectronic device includes a substrate on which a matrix array of what are called bottom electrodes is deposited; an active structure, which is preferably continuous and organic, arranged above the matrix-array of bottom electrodes, the structure being suitable for detecting light; and at least one what is called top electrode lying above the active structure, the top electrode being transparent to the light emitted or detected by the active structure; and at least one conductive element that is borne by the substrate without interposition of the active structure and that is connected to the top electrode by at least one vertical interconnection, the conductive element having an electrical conductivity greater than that of the top electrode. The device may also comprise a layer made of scintillator material, the layer being fastened to the top electrode, so as to form an x-ray imager.

Abstract: An optoelectronic device includes a stack of layers that are arranged on an electrically insulating substrate, including at least one cathode made of a material of work function ?1; one electron-collecting layer that is arranged above the cathode and that is made of a material of work function ?2 and of sheet resistance R; and one active layer comprising at least one p-type organic semiconductor the energy level of which is HO1, wherein the work function ?2 of the electron-collecting layer and the energy level HO1 of the active layer form a potential barrier able to block the injection of holes from the cathode into the active layer; and the sheet resistance R of the electron-collecting layer is higher than or equal to 108?.

Abstract: The present application relates to a method for forming an active zone of metal oxide for an electronic component including the formation of a stack of IXZO layers produced by liquid phase deposition on a substrate, the layers of said stack having different atomic fractions to each other in order to make it possible to reduce the annealing temperature enabling them to be made functional.