Abstract: A piezoelectric device including a paper film including cellulose fibers and containing an additive selected from the group including 4-fluorophenethyl isocyanate, 2-2 diphenyl-ethyl isocyanate, nitrophenyl isocyanate, 1-adamantyl iso-cyanate, cyanophenyl isocyanate, and triphenylamine grafted to the cellulose fibers, the film further having a first surface and a second surface opposite to the first surface and a first electrode arranged on the first surface and a second electrode arranged on the second surface.

Abstract: The device intended to be thermoformed comprises a substrate capable of being thermoformed and an electrically conductive member integral with the said substrate. The electrically conductive member comprises: electrically conductive particles, an electrically conductive material, electrically conductive elements of elongated shape. The electrically conductive material has a melting point which is strictly less than the melting point of the electrically conductive particles and than the melting point of the elements of elongated shape.

Abstract: An organic CMOS circuit including a substrate having an N-type organic transistor and a P-type organic transistor formed thereon, the transistors respectively including a layer of N-type semiconductor material and a layer of P-type semiconductor material. A surface of each of the semiconductor material layers, opposite to the substrate, is covered with an anti-ultraviolet layer made of electrically-insulating material absorbing and/or reflecting ultra-violet rays.

Abstract: This touch-sensitive sensor includes a layer of piezoelectric material interposed between, on the one hand, first and second electrically-conductive elements and, on the other hand, at least one third conductive element including a surface opposite at least one of the first and second conductors.

Abstract: A tin-based material includes: from 50 to 100 wt. parts of grapheme; from 0 to 50 wt. parts of antimony-doped tin dioxide (ATO); from 0 to 50 wt. parts of indium-doped tin dioxide (ITO). The material includes at least ATO and/or ITO.

Abstract: A method for preparing coated metal nanoparticles, each nanoparticle comprising a core constituted of at least one metal M and a layer constituted of at least one polymer, the layer coating the metal core. The method comprises the steps: (a1) preparing a solution A comprising the at least one metal M in the form of cations Mn+, n being an integer comprised between 1 and 3, each metal M being a transition metal of atomic number comprised between 21 and 30, a polyol, and a noble metal salt; (a2) preparing a solution B comprising at least one organic monomer of the at least one polymer, in an organic solvent; (b) mixing solutions A and B, this mixture being heated to the boiling temperature of the polyol; and (c) recovering the coated metal nanoparticles.

Abstract: An electronic circuit, including a substrate made of a first polymer having a first glass transition temperature lower than 200° C., the substrate having first and second opposite surfaces; a first layer or first tracks of a second polymer on the first surface; a second layer or second tracks of the second polymer or of a third polymer on the second surface, the second and third polymers being different from the first polymer and having a second glass transition temperature higher than 200° C.; and third electrically-conductive tracks on the first layer or the first tracks.

Abstract: Method for producing a connection structure passing through a flexible substrate, in particular a plastic substrate, comprising: producing a hole passing through the thickness of the substrate, depositing in the hole a first conductive ink having a first viscosity, so as to form a conductive layer on at least one wall of the hole, depositing in the hole a second conductive ink having a second viscosity greater than the first viscosity, so as to fill the hole.

Abstract: An organic CMOS circuit including a substrate having an N-type organic transistor and a P-type organic transistor formed thereon, the transistors respectively including a layer of N-type semiconductor material and a layer of P-type semiconductor material. A surface of each of the semiconductor material layers, opposite to the substrate, is covered with an anti-ultraviolet layer made of electrically-insulating material absorbing and/or reflecting ultra-violet rays.

Abstract: The invention relates to an interface device including an array of pixels and an insulating, transparent substrate, the pixels being connected to the substrate by linking elements, the contact surface between the linking elements and the pixels being strictly smaller than the surface of the pixels facing the substrate.

Abstract: A device including an electrically conducting track arranged on a support includes a step of supply of the support, and a step of formation of the electrically conducting track on the support including a step of supply of a solution intended to be deposited on the support, a step of deposition of the solution by printing on the support. The step of supply of the solution is such that the solution supplied includes a mixture of a solvent, of a set of metal particles and of a metallic material having a melting point below that of the metal particles of the set of metal particles, and the method includes a step of melting of the metallic material which results in the formation of a solder of metallic material between metal particles of the set of metal particles.

Abstract: An electronic device which includes at least one optoelectronic component including a first active layer, a first electrode, and a second interface layer between the first layer and the first electrode; and at least one first field effect transistor including a first semiconductor portion, a first gate, and at least one third layer, between the first gate and the first semiconductor portion. The third layer is made of the same material as the second layer. The electronic device includes a second electrode and a fourth interface layer between the first layer and the second electrode and includes a second field effect transistor that includes a second semiconductor portion, a second gate, and at least one fifth layer between the second gate and the second semiconductor portion. The fifth layer is made of the same material as the fourth layer.

Abstract: An organic transistor including at least one lower substrate made of plastic material, two electrodes, respectively a source electrode and a drain electrode, deposited on the plastic substrate, a semiconductor layer made of an organic semiconductor material and deposited on the electrodes and the plastic substrate, a dielectric layer deposited on the semiconductor layer, and a gate electrode formed on said dielectric layer. It further includes a porous layer extending between the plastic substrate and the semiconductor layer, said porous layer extending at least between the source and drain electrodes, to decrease the dielectric constant of the surface of said plastic substrate.

Abstract: An electronic device having at least a first portion including a metal oxide that is in contact with a second portion including the said metal oxide, the first portion being semiconducting and the second portion being electrically insulating.

Abstract: The invention relates to a method for manufacturing an electroactive actuator from a stack comprising a first electrode (20) and a layer comprising an electroactive polymer superposed on the electrode (20), the electroactive polymer being deformed when it is in a crystalline state and when an electric field is applied thereto, with the method comprising: a step of obtaining an electroactive layer (30) comprising a step of crystallisation the layer comprising the electroactive polymer superposed on the stack; a step of forming a second electrode (21) in such a way that the electroactive layer (30) is disposed between the two electrodes (20, 21); characterised in that the electroactive polymer is formed from a material which crystallises under the effect of an ultraviolet flash and in that the crystallisation step includes a UV flash step. The invention further relates in particular to electroactive actuator.

Abstract: A method of manufacturing an electronic device including a film, including the steps of forming at least one layer of a solution including a solvent and a compound including a polymer selected from the group including poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)), poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene) (P(VDF-TrFE-CTFE)) and a mixture of these compounds, the molecular rate of chlorine in the copolymer being greater than or equal to 3%; and irradiating at least the layer with pulses of at least one ultraviolet radiation.

Abstract: Method for the oriented crystallization of materials. The present invention relates to a method useful for orienting the crystallization of a material over a surface zone of at least one face of a substrate, comprising at least the steps consisting in: i. determining, on said face, the surface over which the crystalline deposit must be formed, referred to as the zone of interest, ii. depositing, on said face and at the periphery of said zone of interest, at least one particle dedicated to forming a crystallization nucleus, iii. bringing said particle into contact with at least said material to be crystallized, iv.

Abstract: An electronic device which includes at least one optoelectronic component including a first active layer, a first electrode, and a second interface layer between the first layer and the first electrode; and at least one first field effect transistor including a first semiconductor portion, a first gate, and at least one third layer, between the first gate and the first semiconductor portion. The third layer is made of the same material as the second layer. The electronic device includes a second electrode and a fourth interface layer between the first layer and the second electrode and includes a second field effect transistor that includes a second semiconductor portion, a second gate, and at least one fifth layer between the second gate and the second semiconductor portion. The fifth layer is made of the same material as the fourth layer.

Abstract: The invention relates to a process for manufacturing a self-assembled injection monolayer (SAM) on the surface of a metal supporting member, the SAM comprising molecules with a thiol end group. The manufacturing process of the invention comprises the following steps: a) depositing the SAM of desired molecules on a zone in relief of a buffer; and b) transferring the SAM onto the surface of the supporting member by hot pressing of the zone in relief of the buffer obtained in step a). The invention is applicable in particular to the field of electronics.

Abstract: A piezoelectric device including a paper film including cellulose fibers and containing an additive selected from the group including 4-fluorophenethyl isocyanate, 2-2 diphenyl-ethyl isocyanate, nitrophenyl isocyanate, 1-adamantyl iso-cyanate, cyanophenyl isocyanate, and triphenylamine grafted to the cellulose fibers, the film further having a first surface and a second surface opposite to the first surface and a first electrode arranged on the first surface and a second electrode arranged on the second surface.