Abstract: A method for producing nanostructured multi-component or doped oxide particles and the particles produced therein. The process includes the steps of (i) dissolving salts of cations, which are either dopants or components of the final oxide, in an organic solvent; (ii) adding a dispersion of nanoparticles of a single component oxide to the liquid solution; (iii) heating the liquid solution to facilitate diffusion of cations into the nanoparticles; (iv) separating the solids from the liquid solution; and (v) heat treating the solids either to form the desired crystal structure in case of multi-component oxide or to render the homogeneous distribution of dopant cation in the host oxide structure. The process produces nanocrystalline multi-component or doped oxide nanoparticles with a particle size of 5–500 nm, more preferably 20–100 nm; the collection of particles have an average secondary (or aggregate) particle size is in the range of 25–2000 nm, preferably of less than 500 nm.

Abstract: A system and method is provided for identifying activity levels in a kitchen workspace and recommending zones which will facilitate the design and/or redesign of the kitchen workspace. In one embodiment, the invention relates to a software package for receiving user input relative to the user's activity level in the kitchen workspace and using that user input to identify the user's activity level and associate an identified activity level profile with one or more recommended zones for the kitchen workspace.

Abstract: An improved Built-In-Self-Test (BIST) architecture for Content Addressable Memory (CAM) devices, including a bit scanner for reading out the contents of the matchlines of the CAM cells as a serial bit stream; a bit transition detector that detects and determines the address of each bit transition in the serial bit stream; a state machine that generates bit addresses for each expected transition in the serial bit stream; and an analyser that compares expected transition bit addresses with detected transition addresses and declares a BIST failure if expected and detected transition addresses do not match at any point in the bit stream.

Abstract: A method of etching a magnetic material (e.g., nickel-iron alloy (NiFe), cobalt-iron alloy (CoFe), and the like) using a gas mixture comprising a hydrogen halide gas and a fluorocarbon-containing gas is disclosed. The method provides high etch selectivity for the magnetic materials over non-magnetic dielectric materials, such as aluminum oxide (Al2O3) and the like, as well as to photoresist.

Abstract: Techniques are disclosed for programmatically determining one or more logical choices to be offered to users as conditions of a data query (e.g., for searching a content source), and enabling extensions to already-established queries to be programmatically created. A number of different aspects are described, and include programmatically determining all query conditions as well as allowing a user to specify (or request programmatic determination of) further conditions.

Abstract: Techniques are disclosed for enabling end users to selectively subscribe to information content, without requiring the content provider to provide a subscription interface. A user preferably views a content source (such as a Web page) in a Web clipper, and selects content of interest. In preferred embodiments, the user's selection are then communicated to a component which transcodes them into a markup language document, and this document is used to create a set of one or more conditions to use when evaluating whether a subsequent version of the original content is of interest to this subscribing user. The conditions are preferably registered with a content matching component, and one or more actions to be taken upon a successful match are also stored for use at the time of the subsequent content evaluation.

Abstract: Techniques are disclosed for enabling end users to subscribe to information content, without requiring the end user to initiate the subscription process. User patterns are observed, and content subscriptions are offered to users based on these observations. Preferably, the user is allowed to customize the offered subscription, including conditions to be evaluated before content is considered as being of interest to this user, and/or one or more actions to be taken when the conditions are met.

Abstract: A substrate processing method comprises providing a substrate 105 comprising etch resistant material 210 in a process zone 155, such as an energized gas zone in a process chamber 110. The etch resistant material 210 may comprise a resist material 230 over mask material 240. The process may further comprise removing the etch resistant material 210, such as the resist material 230, in the process zone 155 before etching underlying layers.

Abstract: An improved Built-In-Self-Test (BIST) architecture for Content Addressable Memory (CAM) devices, comprising a bit scanner for reading out the contents of the matchlines of the CAM cells as a serial bit stream; a bit transition detector that detects and determines the address of each bit transition in the serial bit stream; a state machine that generates bit addresses for each expected transition in the serial bit stream; and an analyser that compares expected transition bit addresses with detected transition addresses and declares a BIST failure if expected and detected transition addresses do not match at any point in the bit stream.

Abstract: A substrate processing apparatus has a chamber having a substrate support, gas distributor, gas energizer, and gas exhaust port. A process monitor is provided to monitor features in a first region of the substrate and generate a corresponding first signal, and to monitor features in a second region of the substrate and generate a second signal. A chamber controller receives and evaluates the first and second signals, and operates the chamber in relation to the signals. For example, the chamber controller can select a process recipe depending upon the signal values. The chamber controller can also set a process parameter at a first level in a first processing sector and at a second level in a second processing sector. The apparatus provides a closed control loop to independently monitor and control processing of features at different regions of the substrate.

Abstract: The present invention provides a process of etching polysilicon gates using a silicon dioxide hard mask. The process includes exposing a substrate with a polysilicon layer formed thereon to a plasma of a process gas, which includes a base gas and an additive gas. The base gas includes HBr, Cl2, O2, and the additive gas is NF3 and/or N2. By changing a volumetric flow ratio of the additive gas to the base gas, the etch rate selectivity of polysilicon to silicon dioxide may be increased, which allows for a thinner hard mask, better protection of the gate oxide layer, and better endpoint definition and control. Additionally, when the polysilicon layer includes both N-doped and P-doped regions, the additive gas includes both NF3 and N2, and by changing a volumetric flow ratio of NF3 to N2, the etching process may be tailored to provide optimal results in N/P loading and microloading.

Abstract: In a method of generating a virtual map to a plurality of data files necessary for installing software on a computer that is coupled to a network, a primary directory that includes a plurality of links is generated. Each link points to a subdirectory that lists at least one file that is necessary for installing the software. Any subdirectories pointed to by any of the of links that contain redundant files are detected and any links pointing to redundant files are removed from the primary directory. All conflicts between files pointed to by any links of the plurality of links are detected and listed in a conflict report.

Abstract: A method of etching a magnetic material (e.g., nickel-iron alloy (NiFe), cobalt-iron alloy (CoFe), and the like) using a gas mixture comprising a hydrogen halide gas and a fluorocarbon-containing gas is disclosed. The method provides high etch selectivity for the magnetic materials over non-magnetic dielectric materials, such as aluminum oxide (Al2O3) and the like, as well as to photoresist.

Abstract: The present invention generally provides a method for processing a semiconductor substrate, wherein the method includes positioning a substrate in a processing chamber having at least a first and second coils positioned above the substrate and supplying a first electrical current to the first coil. The method further includes supplying a second current to the second coil and regulating a current ratio of electrical current supplied to the first and second coils with a power distribution network in communication with the first and second coils and a single power supply.

Abstract: The present invention provides a method for the simultaneous removal of an oxygen and/or nitrogen-containing dielectric antireflective coating (“DARC”) during plasma etching of an underlying layer in a film stack. According to the method of the invention, the film stack is etched using a plasma containing reactive fluorine species. The concentration of reactive fluorine species within the plasma is controlled based on one or more of the following factors: the oxygen content of the antireflective coating, the nitrogen content of the antireflective coating, the thickness of the antireflection coating layer, and the thickness of the underlying film stack layer. The disclosure of the invention provides preferred combinations of plasma source gases which provide for the simultaneous removal of an oxygen and/or nitrogen-containing DARC layer during etching of an underlying etch stack layer, where the underlying stack layer comprises a metal silicide, polysilicon, or a metal.

Abstract: A method for processing a substrate disposed in a substrate processing chamber to modify the contour of a trench formed on the substrate. The substrate processing chamber is the type that has a coil and a plasma generation system including a source power system operatively coupled to the coil and a bias power system operatively coupled to the substrate process chamber. The method includes transferring the substrate into the substrate process chamber. Thereafter, the substrate is exposed to a plasma formed from a first process gas consisting essentially of a sputtering agent by applying RF energy from the source power system to the coil. The plasma is biased toward the substrate by applying bias power to the substrate process chamber. Thereafter, the substrate is exposed to a plasma formed from a second process gas without applying bias power or applying minimal bias power to the substrate process chamber.

Abstract: A method for processing a substrate disposed in a substrate processing chamber to modify the contour of a trench formed on the substrate. The substrate processing chamber is the type that has a coil and a plasma generation system including a source power system operatively coupled to the coil and a bias power system operatively coupled to the substrate process chamber. The method includes transferring the substrate into the substrate process chamber. Thereafter, the substrate is exposed to a plasma formed from a first process gas consisting essentially of a sputtering agent by applying RF energy from the source power system to the coil. The plasma is biased toward the substrate by applying bias power to the substrate process chamber. Thereafter, the substrate is exposed to a plasma formed from a second process gas without applying bias power or applying minimal bias power to the substrate process chamber.

Abstract: The present invention generally provides a method for processing a semiconductor substrate, wherein the method includes positioning a substrate in a processing chamber having at least a first and second coils positioned above the substrate and supplying a first electrical current to the first coil. The method further includes supplying a second current to the second coil and regulating a current ratio of electrical current supplied to the first and second coils with a power distribution network in communication with the first and second coils and a single power supply.