Patents by Inventor Mohith Verghese

Mohith Verghese has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10529542
    Abstract: Gas-phase reactors and systems are disclosed. Exemplary reactors include a reaction chamber having a tapered height. Tapering the height of the reactor is thought to reduce a pressure drop along the flow of gasses through the reactor. Exemplary reactors can also include a spacer within a gap to control a flow of gas between a region and a reaction chamber.
    Type: Grant
    Filed: March 11, 2015
    Date of Patent: January 7, 2020
    Assignee: ASM IP Holdings B.V.
    Inventors: Carl Louis White, Eric James Shero, Mohith Verghese
  • Patent number: 10468291
    Abstract: An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.
    Type: Grant
    Filed: April 6, 2016
    Date of Patent: November 5, 2019
    Assignee: ASM America, Inc.
    Inventors: Mohith Verghese, Kyle Fondurulia, Carl White, Eric Shero, Darko Babic, Herbert Terhorst, Marko Peussa, Min Yan
  • Publication number: 20190276934
    Abstract: A semiconductor processing apparatus is disclosed. The apparatus may include a multiple chamber module comprising at least a first reaction chamber and a second reaction chamber, and a first substrate support structure disposed within the first reaction chamber and a second substrate support structure disposed within the second reaction chamber. The apparatus may also include a wafer handling chamber comprising a transfer robot configured for transferring two or more substrates along a first transfer path between the wafer handling chamber and the first substrate support structure and a second transfer path between the wafer handling chamber and the second substrate support structure. The apparatus may also include at least a first pyrometer and a second pyrometer, wherein a first optical path of the first pyrometer intersects the first transfer path and a second optical path of the second pyrometer intersect the second transfer path.
    Type: Application
    Filed: March 9, 2018
    Publication date: September 12, 2019
    Inventors: Mohith Verghese, Todd Dunn, John Kevin Shugrue
  • Patent number: 10358599
    Abstract: Compositions, methods, and systems permit selectively etching metal oxide from reactor metal parts (e.g., titanium and/or titanium alloys). The etching composition comprises an alkali metal hydroxide and gallic acid. The method is useful for cleaning reaction chambers used in the deposition of metal oxide films such as aluminum oxide.
    Type: Grant
    Filed: September 12, 2016
    Date of Patent: July 23, 2019
    Assignee: ASM America, Inc.
    Inventors: Srini Raghavan, Eric Shero, Mohith Verghese
  • Publication number: 20190157054
    Abstract: Multi-zone reactors, systems including a multi-zone reactor, and methods of using the systems and reactors are disclosed. Exemplary multi-zone reactors include a movable susceptor assembly and a moveable plate. The movable susceptor assembly and movable plate can move vertically between reaction zones of a reactor to expose a substrate to multiple processes or reactants.
    Type: Application
    Filed: January 18, 2019
    Publication date: May 23, 2019
    Inventors: Carl Louis White, Mohith Verghese, Eric James Shero, Todd Robert Dunn
  • Patent number: 10276355
    Abstract: Multi-zone reactors, systems including a multi-zone reactor, and methods of using the systems and reactors are disclosed. Exemplary multi-zone reactors include a movable susceptor assembly and a moveable plate. The movable susceptor assembly and movable plate can move vertically between reaction zones of a reactor to expose a substrate to multiple processes or reactants.
    Type: Grant
    Filed: March 12, 2015
    Date of Patent: April 30, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Carl Louis White, Mohith Verghese, Eric James Shero, Todd Robert Dunn
  • Publication number: 20180094350
    Abstract: Herein disclosed are systems and methods related to solid source chemical vaporizer vessels and multiple chamber deposition modules. In some embodiments, a solid source chemical vaporizer includes a housing base and a housing lid. Some embodiments also include a first and second tray configured to be housed within the housing base, wherein each tray defines a first serpentine path adapted to hold solid source chemical and allow gas flow thereover. In some embodiments, a multiple chamber deposition module includes first and second vapor phase reaction chambers and a solid source chemical vaporizer vessel to supply each of the first and second vapor phase reaction chambers.
    Type: Application
    Filed: September 30, 2016
    Publication date: April 5, 2018
    Inventors: Mohith Verghese, Eric James Shero, Carl Louis White, Kyle Fondurulia
  • Publication number: 20180094351
    Abstract: Herein disclosed are systems and methods related to solid source chemical vaporizer vessels and multiple chamber deposition modules. In some embodiments, a solid source chemical vaporizer includes a housing base and a housing lid. Some embodiments also include a first and second tray configured to be housed within the housing base, wherein each tray defines a first serpentine path adapted to hold solid source chemical and allow gas flow thereover. In some embodiments, a multiple chamber deposition module includes first and second vapor phase reaction chambers and a solid source chemical vaporizer vessel to supply each of the first and second vapor phase reaction chambers.
    Type: Application
    Filed: May 3, 2017
    Publication date: April 5, 2018
    Inventors: Mohith Verghese, Eric James Shero, Carl Louis White, Kyle Fondurulia, Herbert Terhorst
  • Patent number: 9873942
    Abstract: Methods of vapor deposition include multiple vapor sources. A vapor deposition method includes delivering pulses of a vapor containing a first source chemical to a reaction space from at least two separate source vessels simultaneously. The pulses can contain a substantially consistent concentration of the first source chemical. The method can include purging the reaction space of an excess of the first source chemical after the delivering, and delivering pulses of a vapor containing a second source chemical to the reaction space from at least two separate source vessels simultaneously after the purging.
    Type: Grant
    Filed: December 11, 2015
    Date of Patent: January 23, 2018
    Assignee: ASM IP Holding B.V.
    Inventors: Christophe Pomarede, Eric Shero, Mohith Verghese, Jan Willem Maes, Chang-Gong Wang
  • Publication number: 20170009136
    Abstract: Compositions, methods, and systems permit selectively etching metal oxide from reactor metal parts (e.g., titanium and/or titanium alloys). The etching composition comprises an alkali metal hydroxide and gallic acid. The method is useful for cleaning reaction chambers used in the deposition of metal oxide films such as aluminum oxide.
    Type: Application
    Filed: September 12, 2016
    Publication date: January 12, 2017
    Inventors: Srini Raghavan, Eric Shero, Mohith Verghese
  • Patent number: 9481937
    Abstract: Compositions, methods, and systems permit selectively etching metal oxide from reactor metal parts (e.g., titanium and/or titanium alloys). The etching composition comprises an alkali metal hydroxide and gallic acid. The method is useful for cleaning reaction chambers used in the deposition of metal oxide films such as aluminum oxide.
    Type: Grant
    Filed: April 30, 2009
    Date of Patent: November 1, 2016
    Assignee: ASM America, Inc.
    Inventors: Srini Raghavan, Eric Shero, Mohith Verghese
  • Publication number: 20160268102
    Abstract: Gas-phase reactors and systems are disclosed. Exemplary reactors include a reaction chamber having a tapered height. Tapering the height of the reactor is thought to reduce a pressure drop along the flow of gasses through the reactor. Exemplary reactors can also include a spacer within a gap to control a flow of gas between a region and a reaction chamber.
    Type: Application
    Filed: March 11, 2015
    Publication date: September 15, 2016
    Inventors: Carl Louis White, Eric James Shero, Mohith Verghese
  • Publication number: 20160268107
    Abstract: Multi-zone reactors, systems including a multi-zone reactor, and methods of using the systems and reactors are disclosed. Exemplary multi-zone reactors include a movable susceptor assembly and a moveable plate. The movable susceptor assembly and movable plate can move vertically between reaction zones of a reactor to expose a substrate to multiple processes or reactants.
    Type: Application
    Filed: March 12, 2015
    Publication date: September 15, 2016
    Inventors: Carl Louis White, Mohith Verghese, Eric James Shero, Todd Robert Dunn
  • Publication number: 20160233124
    Abstract: An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.
    Type: Application
    Filed: April 6, 2016
    Publication date: August 11, 2016
    Inventors: Mohith Verghese, Kyle Fondurulia, Carl White, Eric Shero, Darko Babic, Herbert Terhorst, Marko Peussa, Min Yan
  • Patent number: 9359672
    Abstract: An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.
    Type: Grant
    Filed: June 21, 2012
    Date of Patent: June 7, 2016
    Assignee: ASM America, Inc.
    Inventors: Mohith Verghese, Kyle Fondurulia, Carl White, Eric Shero, Darko Babic, Herbert Terhorst, Marko Peussa, Min Yan
  • Publication number: 20160097121
    Abstract: A vapor deposition method and apparatus including at least two vessels containing a same first source chemical. A controller is programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels, each of the doses having a substantially consistent concentration of the first source chemical. The apparatus may also include at least two vessels containing a same second source chemical. The controller can be programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels containing the second source chemical, each of the doses having a substantially consistent concentration of the second source chemical. The second source chemical can be pulsed to the reaction space after the reaction space is purged of an excess of the first source chemical.
    Type: Application
    Filed: December 11, 2015
    Publication date: April 7, 2016
    Inventors: Christophe Pomarede, Eric Shero, Mohith Verghese, Jan Willem Maes, Chang-Gong Wang
  • Patent number: 9238865
    Abstract: A vapor deposition method and apparatus including at least two vessels containing a same first source chemical. A controller is programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels, each of the doses having a substantially consistent concentration of the first source chemical. The apparatus may also include at least two vessels containing a same second source chemical. The controller can be programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels containing the second source chemical, each of the doses having a substantially consistent concentration of the second source chemical. The second source chemical can be pulsed to the reaction space after the reaction space is purged of an excess of the first source chemical.
    Type: Grant
    Filed: February 6, 2012
    Date of Patent: January 19, 2016
    Assignee: ASM IP HOLDING B.V.
    Inventors: Christophe Pomarede, Eric Shero, Mohith Verghese, Jan Willem Maes, Chang-Gong Wang
  • Patent number: 9177784
    Abstract: Embodiments related to methods for forming a film stack on a substrate are provided. One example method comprises exposing the substrate to an activated oxygen species and converting an exposed surface of the substrate into a continuous monolayer of a first dielectric material. The example method also includes forming a second dielectric material on the continuous monolayer of the first dielectric material without exposing the substrate to an air break.
    Type: Grant
    Filed: February 18, 2014
    Date of Patent: November 3, 2015
    Assignee: ASM IP Holdings B.V.
    Inventors: Petri Raisanen, Michael Givens, Mohith Verghese
  • Patent number: 9117773
    Abstract: Methods are provided herein for forming thin films comprising oxygen by atomic layer deposition. The thin films comprising oxygen can be deposited by providing higher concentration water pulses, a higher partial pressure of water in the reaction space, and/or a higher flow rate of water to a substrate in a reaction space. Thin films comprising oxygen can be used, for example, as dielectric oxides in transistors, capacitors, integrated circuits, and other semiconductor applications.
    Type: Grant
    Filed: August 26, 2009
    Date of Patent: August 25, 2015
    Assignee: ASM America, Inc.
    Inventors: Eric J. Shero, Mohith Verghese, Jan Willem Maes
  • Patent number: 8784563
    Abstract: A system and method for mixing a plurality of gases for an atomic layer deposition (ALD) reactor. The mixer is configured to mix the plurality of gases while minimizing the potential for re-circulation within the mixer. The mixer is further configured to maintain the flow velocity of the plurality of gases as the gases pass through the mixer.
    Type: Grant
    Filed: December 9, 2011
    Date of Patent: July 22, 2014
    Assignee: ASM America, Inc.
    Inventors: Ryan M Schmidt, Mohith Verghese