Patents by Inventor Mohith Verghese
Mohith Verghese has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9359672Abstract: An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.Type: GrantFiled: June 21, 2012Date of Patent: June 7, 2016Assignee: ASM America, Inc.Inventors: Mohith Verghese, Kyle Fondurulia, Carl White, Eric Shero, Darko Babic, Herbert Terhorst, Marko Peussa, Min Yan
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Publication number: 20160097121Abstract: A vapor deposition method and apparatus including at least two vessels containing a same first source chemical. A controller is programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels, each of the doses having a substantially consistent concentration of the first source chemical. The apparatus may also include at least two vessels containing a same second source chemical. The controller can be programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels containing the second source chemical, each of the doses having a substantially consistent concentration of the second source chemical. The second source chemical can be pulsed to the reaction space after the reaction space is purged of an excess of the first source chemical.Type: ApplicationFiled: December 11, 2015Publication date: April 7, 2016Inventors: Christophe Pomarede, Eric Shero, Mohith Verghese, Jan Willem Maes, Chang-Gong Wang
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Patent number: 9238865Abstract: A vapor deposition method and apparatus including at least two vessels containing a same first source chemical. A controller is programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels, each of the doses having a substantially consistent concentration of the first source chemical. The apparatus may also include at least two vessels containing a same second source chemical. The controller can be programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels containing the second source chemical, each of the doses having a substantially consistent concentration of the second source chemical. The second source chemical can be pulsed to the reaction space after the reaction space is purged of an excess of the first source chemical.Type: GrantFiled: February 6, 2012Date of Patent: January 19, 2016Assignee: ASM IP HOLDING B.V.Inventors: Christophe Pomarede, Eric Shero, Mohith Verghese, Jan Willem Maes, Chang-Gong Wang
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Patent number: 9177784Abstract: Embodiments related to methods for forming a film stack on a substrate are provided. One example method comprises exposing the substrate to an activated oxygen species and converting an exposed surface of the substrate into a continuous monolayer of a first dielectric material. The example method also includes forming a second dielectric material on the continuous monolayer of the first dielectric material without exposing the substrate to an air break.Type: GrantFiled: February 18, 2014Date of Patent: November 3, 2015Assignee: ASM IP Holdings B.V.Inventors: Petri Raisanen, Michael Givens, Mohith Verghese
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Patent number: 9117773Abstract: Methods are provided herein for forming thin films comprising oxygen by atomic layer deposition. The thin films comprising oxygen can be deposited by providing higher concentration water pulses, a higher partial pressure of water in the reaction space, and/or a higher flow rate of water to a substrate in a reaction space. Thin films comprising oxygen can be used, for example, as dielectric oxides in transistors, capacitors, integrated circuits, and other semiconductor applications.Type: GrantFiled: August 26, 2009Date of Patent: August 25, 2015Assignee: ASM America, Inc.Inventors: Eric J. Shero, Mohith Verghese, Jan Willem Maes
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Patent number: 8784563Abstract: A system and method for mixing a plurality of gases for an atomic layer deposition (ALD) reactor. The mixer is configured to mix the plurality of gases while minimizing the potential for re-circulation within the mixer. The mixer is further configured to maintain the flow velocity of the plurality of gases as the gases pass through the mixer.Type: GrantFiled: December 9, 2011Date of Patent: July 22, 2014Assignee: ASM America, Inc.Inventors: Ryan M Schmidt, Mohith Verghese
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Publication number: 20140159170Abstract: Embodiments related to methods for forming a film stack on a substrate are provided. One example method comprises exposing the substrate to an activated oxygen species and converting an exposed surface of the substrate into a continuous monolayer of a first dielectric material. The example method also includes forming a second dielectric material on the continuous monolayer of the first dielectric material without exposing the substrate to an air break.Type: ApplicationFiled: February 18, 2014Publication date: June 12, 2014Inventors: Petri Raisanen, Michael Givens, Mohith Verghese
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Patent number: 8728832Abstract: Embodiments related to methods for forming a film stack on a substrate are provided. One example method comprises exposing the substrate to an activated oxygen species and converting an exposed surface of the substrate into a continuous monolayer of a first dielectric material. The example method also includes forming a second dielectric material on the continuous monolayer of the first dielectric material without exposing the substrate to an air break.Type: GrantFiled: May 7, 2012Date of Patent: May 20, 2014Assignee: ASM IP Holdings B.V.Inventors: Petri Raisanen, Michael Givens, Mohith Verghese
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Publication number: 20130292807Abstract: Embodiments related to methods for forming a film stack on a substrate are provided. One example method comprises exposing the substrate to an activated oxygen species and converting an exposed surface of the substrate into a continuous monolayer of a first dielectric material. The example method also includes forming a second dielectric material on the continuous monolayer of the first dielectric material without exposing the substrate to an air break.Type: ApplicationFiled: May 7, 2012Publication date: November 7, 2013Applicant: ASM IP HOLDINGS B.V.Inventors: Petri Raisanen, Michael Givens, Mohith Verghese
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Publication number: 20130203267Abstract: A vapor deposition method and apparatus including at least two vessels containing a same first source chemical. A controller is programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels, each of the doses having a substantially consistent concentration of the first source chemical. The apparatus may also include at least two vessels containing a same second source chemical. The controller can be programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels containing the second source chemical, each of the doses having a substantially consistent concentration of the second source chemical. The second source chemical can be pulsed to the reaction space after the reaction space is purged of an excess of the first source chemical.Type: ApplicationFiled: February 6, 2012Publication date: August 8, 2013Applicant: ASM IP HOLDING B.V.Inventors: Christophe Pomarede, Eric Shero, Mohith Verghese, Jan Willem Maes, Chang-Gong Wang
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Patent number: 8465801Abstract: A system and method for mixing a plurality of gases for an atomic layer deposition (ALD) reactor. The mixer is configured to mix the plurality of gases while minimizing the potential for re-circulation within the mixer. The mixer is further configured to maintain the flow velocity of the plurality of gases as the gases pass through the mixer.Type: GrantFiled: March 5, 2009Date of Patent: June 18, 2013Assignee: ASM America, Inc.Inventors: Ryan M. Schmidt, Mohith Verghese
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Patent number: 8309173Abstract: An apparatus and method improves heating of a solid precursor inside a sublimation vessel. In one embodiment, inert, thermally conductive elements are interspersed among units of solid precursor. For example the thermally conductive elements can comprise a powder, beads, rods, fibers, etc. In one arrangement, microwave energy can directly heat the thermally conductive elements.Type: GrantFiled: December 9, 2010Date of Patent: November 13, 2012Assignee: ASM International N.V.Inventors: Marko Tuominen, Eric Shero, Mohith Verghese
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Publication number: 20120266821Abstract: An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.Type: ApplicationFiled: June 21, 2012Publication date: October 25, 2012Applicant: ASM America, Inc.Inventors: Mohith Verghese, Kyle Fondurulia, Carl White, Eric Shero, Darko Babic, Herbert Terhorst, Marko Peussa, Min Yan
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Patent number: 8293658Abstract: Methods and structures relating to the formation of mixed SAMs for preventing undesirable growth or nucleation on exposed surfaces inside a reactor are described. A mixed SAM can be formed on surfaces for which nucleation is not desired by introducing a first SAM precursor having molecules of a first length and a second SAM precursor having molecules of a second length shorter than the first. Examples of exposed surfaces for which a mixed SAM can be provided over include reactor surfaces and select surfaces of integrated circuit structures, such as insulator and dielectric layers.Type: GrantFiled: February 17, 2010Date of Patent: October 23, 2012Assignee: ASM America, Inc.Inventors: Eric Shero, Mohith Verghese, Anthony Muscat, Shawn Miller
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Patent number: 8211230Abstract: An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.Type: GrantFiled: January 17, 2006Date of Patent: July 3, 2012Assignee: ASM America, Inc.Inventors: Mohith Verghese, Kyle Fondurulia, Carl White, Eric Shero, Darko Babic, Herbert Terhorst, Marko Peussa, Min Yan
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Patent number: 8152922Abstract: A system and method for mixing a plurality of gases for an atomic layer deposition (ALD) reactor. The mixer is configured to mix the plurality of gases while minimizing the potential for re-circulation within the mixer. The mixer is further configured to maintain the flow velocity of the plurality of gases as the gases pass through the mixer.Type: GrantFiled: August 30, 2004Date of Patent: April 10, 2012Assignee: ASM America, Inc.Inventors: Ryan M. Schmidt, Mohith Verghese
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Publication number: 20120079984Abstract: A system and method for mixing a plurality of gases for an atomic layer deposition (ALD) reactor. The mixer is configured to mix the plurality of gases while minimizing the potential for re-circulation within the mixer. The mixer is further configured to maintain the flow velocity of the plurality of gases as the gases pass through the mixer.Type: ApplicationFiled: December 9, 2011Publication date: April 5, 2012Applicant: ASM America, Inc.Inventors: Ryan M. Schmidt, Mohith Verghese
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Publication number: 20110198736Abstract: Methods and structures relating to the formation of mixed SAMs for preventing undesirable growth or nucleation on exposed surfaces inside a reactor are described. A mixed SAM can be formed on surfaces for which nucleation is not desired by introducing a first SAM precursor having molecules of a first length and a second SAM precursor having molecules of a second length shorter than the first. Examples of exposed surfaces for which a mixed SAM can be provided over include reactor surfaces and select surfaces of integrated circuit structures, such as insulator and dielectric layers.Type: ApplicationFiled: February 17, 2010Publication date: August 18, 2011Applicant: ASM America, Inc.Inventors: ERIC SHERO, Mohith Verghese, Anthony Muscat, Shawn Miller
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Publication number: 20110076402Abstract: An apparatus and method improves heating of a solid precursor inside a sublimation vessel. In one embodiment, inert, thermally conductive elements are interspersed among units of solid precursor. For example the thermally conductive elements can comprise a powder, beads, rods, fibers, etc. In one arrangement, microwave energy can directly heat the thermally conductive elements.Type: ApplicationFiled: December 9, 2010Publication date: March 31, 2011Applicant: ASM INTERNATIONAL N.V.Inventors: Marko Tuominen, Eric Shero, Mohith Verghese
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Patent number: 7914847Abstract: Protective layers are formed on a surface of an atomic layer deposition (ALD) or chemical vapor deposition (CVD) reactor. Parts defining a reaction space for an ALD or CVD reactor can be treated, in situ or ex situ, with chemicals that deactivate reactive sites on the reaction space surface(s). A pre-treatment step can maximize the available reactive sites prior to the treatment step. With reactive sites deactivated by adsorbed treatment reactant, during subsequent processing the reactant gases have reduced reactivity or deposition upon these treated surfaces. Accordingly, purge steps can be greatly shortened and a greater number of runs can be conducted between cleaning steps to remove built-up deposition on the reactor walls.Type: GrantFiled: November 30, 2006Date of Patent: March 29, 2011Assignee: ASM America, Inc.Inventors: Mohith Verghese, Eric J. Shero