Abstract: A method for measuring angular displacement is disclosed. The method includes preparing a sensor, where the sensor includes a first semi-cylindrical dielectric rotatable relative to a rotation axis, a second semi-cylindrical dielectric fixed relative to the rotation axis, and a transmission line that is located between the first semi-cylindrical dielectric and the second semi-cylindrical dielectric. The first semi-cylindrical dielectric includes a first plurality of periodic air-gaps and the second semi-cylindrical dielectric includes a second plurality of periodic air-gaps.

Abstract: A method for measuring angular displacement is disclosed. The method includes preparing a sensor, where the sensor includes a first semi-cylindrical dielectric rotatable relative to a rotation axis, a second semi-cylindrical dielectric fixed relative to the rotation axis, and a transmission line that is located between the first semi-cylindrical dielectric and the second semi-cylindrical dielectric. The first semi-cylindrical dielectric includes a first plurality of periodic air-gaps and the second semi-cylindrical dielectric includes a second plurality of periodic air-gaps.

Abstract: Circuit arrangement and method for reducing electromagnetic interference. The circuit arrangement includes a supply potential connection, a reference-ground potential connection, a controllable impedance element, a signal generator, and a circuit unit. The controllable impedance element is connected between the supply potential connection and the reference-ground potential connection, and has a control connection for receiving a control signal for controlling the impedance of the impedance element. The signal generator is coupled to the control connection of the impedance element. The circuit unit is connected between the supply potential connection and the reference-ground potential connection, and originates the electromagnetic interference during operation. The signal generator is designed to produce the control signal, which varies over time, in such a manner that the electromagnetic interference which originates from the circuit unit during operation is changed.

Abstract: A sensor for sensing a measurand is described, the sensor comprising a coplanar waveguide with a first surface and a second surface opposite to the first surface; a first structure with a first periodically varying dielectric characteristic, the first structure being arranged on the first surface of the coplanar waveguide; and a second structure with a second periodically varying dielectric characteristic, the second structure being arranged on the second surface of the coplanar waveguide, wherein a unit-cell of the structures with periodically varying dielectric characteristics is dimensioned such that the sensor has a frequency dependent transfer behavior with at least one transfer minimum, and wherein the sensor is implemented such that the measurand influences the first periodically varying dielectric characteristic of the first structure or the second periodically varying dielectric characteristic of the second structure or a relation between such first structure and second structure.

Abstract: A component having at least one conductor path on a substrate, and a production method for fabricating such a component is provided. The component is made by providing at least one conductor path on a predefined area of the substrate. Then a dielectric insulating layer is formed over the at least one conductor path, and a an area of the substrate is completely back etched below the at least one conductor path beginning on the bottom side of the substrate in such a way that the at least one conductor path is supported across the completely back-etched area of the substrate by adhesion to the second insulating layer.

Abstract: A shielded circuit board includes a first metal layer with a first surface area, and first and second portions. A second metal layer includes first and second surface areas. At least one signal transmission line is arranged in a first dielectric material, the first dielectric material separating the first portion of the first metal layer and a first portion of the second metal layer. The first surface area of the first metal layer is arranged on the first portion facing the first surface area of the second metal layer and is arranged on the second portion facing the second surface area of the second metal layer. A method relates to shielding a circuit board.

Abstract: A device for application in the high frequency field and a method for forming a photonic band-gap structure are provided. The device being mountable on a primary substrate for forming the device. The device being formed by forming conformal coplanar waveguide metallizations on surface areas of two substrates, connecting the conformal coplanar waveguide metallizations of the two substrates, and structured back-etching of the two substrates, starting at surface areas of the two substrates that are opposite the coplanar waveguide metallizations.

Abstract: A sensor for sensing a measurand is described, the sensor comprising a coplanar waveguide with a first surface and a second surface opposite to the first surface; a first structure with a first periodically varying dielectric characteristic, the first structure being arranged on the first surface of the coplanar waveguide; and a second structure with a second periodically varying dielectric characteristic, the second structure being arranged on the second surface of the coplanar waveguide, wherein a unit-cell of the structures with periodically varying dielectric characteristics is dimensioned such that the sensor has a frequency dependent transfer behavior with at least one transfer minimum, and wherein the sensor is implemented such that the measurand influences the first periodically varying dielectric characteristic of the first structure or the second periodically varying dielectric characteristic of the second structure or a relation between such first structure and second structure.

Abstract: A device for application in the high frequency field and a method for forming a photonic band-gap structure are provided. The device being mountable on a primary substrate for forming the device. The device being formed by forming conformal coplanar waveguide metallizations on surface areas of two substrates, connecting the conformal coplanar waveguide metallizations of the two substrates, and structured back-etching of the two substrates, starting at surface areas of the two substrates that are opposite the coplanar waveguide metallizations.

Abstract: A distributed amplifier is provided that includes an input network that simulates an input signal transmission line, and having an output network that simulates an output signal transmission line, and also having multiple unit cells with amplifying characteristics that are connected in parallel to one another between the input network and the output network, that amplify a signal propagating through the input network and feed it into the output network with a predetermined phase relationship to a signal propagating through the output network.

Abstract: A method for integrating an electronic component or the like into a substrate includes following process steps: formation of a dielectric insulating layer on the front side of a substrate; complete back-etching of an area of the substrate from the back of the substrate to form a cavity; formation of a photoresistive layer with a homogeneous thickness over the back of the substrate; placement of an electronic component on the photoresistive layer formed in the cavity for adhesion of the electronic component to the photoresistive layer; removal of the formed photoresistive layer except for the area on which the electronic component adheres to the photoresistive layer in the cavity; and formation of a fixing layer over the back of the substrate to fix the electronic component in the cavity of the substrate.

Abstract: A shielded circuit board includes a first metal layer with a first surface area, and first and second portions. A second metal layer includes first and second surface areas. At least one signal transmission line is arranged in a first dielectric material, the first dielectric material separating the first portion of the first metal layer and a first portion of the second metal layer. The first surface area of the first metal layer is arranged on the first portion facing the first surface area of the second metal layer and is arranged on the second portion facing the second surface area of the second metal layer. A method relates to shielding a circuit board.

Abstract: A component for the transmission of electromagnetic waves and a method for producing such a component is provided, whereby conductors of a coplanar waveguide system are embedded in a membrane such that they are at least partially suspended across a back-etched area of the substrate for the decoupling of the conductors from the substrate (1). An additional substrate is connected to the bottom side of the back-etched area of the substrate in such a way that a hollow cavity is formed.

Abstract: A method for constructing passive devices on a substrate and a device is provided that is fabricated in accordance with the a method. The method includes the steps of: forming a plurality of grooves on a surface of the substrate by using an anisotropic etching procedure to enlarge a surface area of the substrate; forming an insulating layer at least in the plurality of grooves; and a structured metallization at least in the plurality of grooves for constructing the device above the insulating layer such that for a maximum integration density, the passive device is essentially constructed to extend through the plurality of grooves.

Abstract: Circuit arrangement and method for reducing electromagnetic interference. The circuit arrangement includes a supply potential connection, a reference-ground potential connection, a controllable impedance element, a signal generator, and a circuit unit. The controllable impedance element is connected between the supply potential connection and the reference-ground potential connection, and has a control connection for receiving a control signal for controlling the impedance of the impedance element. The signal generator is coupled to the control connection of the impedance element. The circuit unit is connected between the supply potential connection and the reference-ground potential connection, and originates the electromagnetic interference during operation. The signal generator is designed to produce the control signal, which varies over time, in such a manner that the electromagnetic interference which originates from the circuit unit during operation is changed.

Abstract: A buffer circuit includes a signal input, a first and a second voltage tap and an inverter circuit including an inverter input coupled to the signal input, an output node and a first and a second supply tap. Furthermore, a first element having a diode-type transfer response is provided, which is coupled by an anode terminal to the first supply tap. The buffer circuit correspondingly includes a second element, which is coupled by a cathode terminal to the second supply tap. Furthermore, a transistor pair is provided, wherein a control terminal of a first transistor of the transistor pair is coupled to the anode terminal of the first element and a control terminal of a second transistor of the transistor pair is coupled to the cathode terminal of the second element.

Abstract: Field-effect transistor is disclosed that includes a gate oxide, a polycrystalline layer applied on the gate oxide, and at least one spacer of polycrystalline silicon, wherein the gate oxide has a first thickness in a first region beneath the polycrystalline silicon layer and a second thickness in a second region beneath the at least one spacer, and wherein the second thickness of the gate oxide in the second region is reduced as compared to the first thickness of the gate oxide in the first region.

Abstract: A circuit having an input amplifier and a second amplifier that provides the circuit with a unity gain crossover frequency that is higher than a unity gain crossover frequency of the input amplifier is provided. The circuit has a control input coupled to a control input of the input amplifier and also has a first current connection and a second current connection. The circuit further includes an additional amplifier that is connected in series with the second amplifier and is controlled by the input amplifier.

Abstract: A bipolar transistor and a method for manufacturing the bipolar transistor is disclosed. The bipolar transistor is formed by the steps of: doping of a surface region of a substrate with a first doping to form an active emitter region; formation of at least one cavity in the substrate; application of a dielectric isolation layer to the surface of the at least one cavity in the substrate; formation of a contiguous base region with a second doping both in the at least one cavity to provide a base connection region, electrically isolated from the substrate by the dielectric isolation layer, and also at least partially on the formed active emitter region to provide a base region electrically connected to the substrate; and formation of a collector region with a third doping at least on the formed base region to provide a collector electrically connected to the formed base region.

Abstract: A method for integrating an electronic component or the like into a substrate includes following process steps: formation of a dielectric insulating layer on the front side of a substrate; complete back-etching of an area of the substrate from the back of the substrate to form a cavity; formation of a photoresistive layer with a homogeneous thickness over the back of the substrate; placement of an electronic component on the photoresistive layer formed in the cavity for adhesion of the electronic component to the photoresistive layer; removal of the formed photoresistive layer except for the area on which the electronic component adheres to the photoresistive layer in the cavity; and formation of a fixing layer over the back of the substrate to fix the electronic component in the cavity of the substrate.