Abstract: Disclosed is a method of manufacturing a thin film, the method including: growing an epitaxial layer on a surface of a wafer at a growth pressure, wherein the growing of the epitaxial layer comprises controlling a defect present on a surface of the wafer. Also, disclosed is a wafer including: a substrate; and a buffer layer and an epitaxial layer located on the substrate, wherein a surface dislocation density of the epitaxial layer is equal to or less than 1/cm2.

Abstract: Disclosed are a hot plate and a method of manufacturing the same. The method includes the steps of preparing a first barrier layer, laminating a first heat transfer layer on the first barrier layer, and laminating a second barrier layer on the first heat transfer layer. The first barrier layer or the second barrier layer includes a plurality of first sub-nano-barrier layers and a plurality of second sub-nano-barrier layers. The hot plate includes a first barrier layer, a first heat transfer layer on the first barrier layer, and a second barrier layer on the first heat transfer layer. The first barrier layer or the second barrier layer includes a plurality of first sub-nano-barrier layers and a plurality of second sub-nano-barrier layers.

Abstract: A method for fabricating a wafer according to the embodiment comprises the steps of depositing an epi layer in an epi deposition part; transferring the wafer to an annealing part connected to the epi deposition part; annealing the wafer in the annealing part; transferring the wafer to a cooling part connected to the annealing part; and cooling the wafer in the cooling part, wherein the depositing of the wafer, the annealing of the wafer and the cooling of the wafer are continuously performed. An apparatus for fabricating a wafer according to the embodiment comprises an epi deposition part; an annealing part connected to the epi deposition part; and a cooling part connected to the annealing part.

Abstract: A deposition apparatus according to the embodiment includes a gas supply part for supplying a first gas; an ionization part connected to the gas supply part to supply a second gas, which is obtained by ionizing the first gas; and a reaction part into which the second gas is introduced to create a reaction. A deposition method according to the embodiment includes the steps of preparing a first gas; supplying a second gas, which is obtained by ionizing the first gas; and reacting the second gas with a substrate.

Abstract: A deposition apparatus and a method of forming a thin film are provided. The deposition apparatus includes a reaction gas supply unit supplying a reaction gas, a buffer unit temporarily storing the reaction gas supplied from the reaction gas supply unit, and a deposition unit forming a thin film by using the reaction gas supplied from the buffer unit.

Abstract: A method of fabricating a wafer according to the embodiment comprises the steps of growing an wafer on a surface of the wafer in a growth temperature; and cooling the wafer after the wafer has been grown, wherein a stepwise cooling is performed when cooling the wafer.

Abstract: Disclosed are a deposition apparatus and a deposition method. The deposition apparatus comprises a generator to produce an intermediate compound by using a source material, a storage part to collect and store the intermediate compound, and a reaction part in which the intermediate compound is introduced and reaction of the intermediate compound occurs. The deposition method comprises producing an intermediate compound by using a source material, collecting and storing the intermediate compound, and introducing the intermediate compound into a reaction furnace and allowing the intermediate compound to react to a substrate or a wafer.

Abstract: A semiconductor device according to the embodiment comprises a base substrate; patterns on the base substrate; and an epitaxial layer on the base substrate, wherein the epitaxial layer is formed on a surface of the substrate exposed among the patterns. A method for growing a semiconductor crystal comprises the steps of cleaning a silicon carbide substrate; forming patterns on the silicon carbide substrate; and forming an epitaxial layer on the silicon carbide substrate.

Abstract: An apparatus for removing a defect according to the embodiment includes an image processing part for observing a surface of a substrate; a layer forming part for forming a layer on the surface of the substrate; and a humidity controlling part for controlling humidity in a chamber in which the substrate is placed. A method for removing a defect according to the embodiment includes detecting the defect on a surface of a substrate; forming an oxide layer by oxidizing the defect; and removing the oxide layer. A method for removing a defect according to another embodiment includes forming an oxide layer on an entire surface of a substrate; and removing the oxide layer to remove the defect.

Abstract: A semiconductor device comprises a base substrate, a pattern on the base substrate, a buffer layer on the base substrate, and an epitaxial layer on the buffer. The pattern is a self-assembled pattern. A method for growing a semiconductor crystal comprises cleaning a silicon carbide substrate, forming a self-assembled pattern on the silicon carbide substrate, forming a buffer layer on the silicon carbide substrate, and forming an epitaxial layer on the buffer layer. A semiconductor device comprises a base substrate comprising a pattern groove and an epitaxial layer on the base substrate. A method for growing a semiconductor crystal comprises cleaning a silicon carbide substrate, forming a self-assembled projection on the silicon carbide substrate, forming a pattern groove in the silicon carbide, and forming an epitaxial layer on the silicon carbide.