Abstract: Described herein are compositions, silicon nitride films and methods for forming silicon nitride films using at least on cyclodisilazane precursor. In one aspect, there is provided a method of forming a silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one cyclodisilazane comprising a hydrocarbon leaving group and two Si—H groups wherein the at least one cyclodisilazane reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2.

Abstract: A memory device and an operating method of the memory device, the memory device including a memory cell array including a plurality of memory cells respectively arranged at points at which a plurality of word lines and a plurality of bit lines cross; and a control logic circuit configured to precharge a selected word line connected to a selected memory cell and precharge a selected bit line connected to the selected memory cell in a read operation, wherein the control logic circuit is further configured to precharge a first unselected word line among unselected word lines to a second voltage when the selected word line is precharged to a first voltage, a level of the first voltage is lower than a level of a third voltage applied to an unselected bit line when the selected word line is precharged to the first voltage, and a level of the second voltage is higher than the level of the third voltage.

Abstract: A composition and method for using the composition in the fabrication of an electronic device are disclosed. Compounds, compositions and methods for depositing a high quality silicon nitride or carbon doped silicon nitride.

Abstract: A memory device includes a memory cell array including a plurality of memory cells arranged at points where a plurality of word lines and a plurality of bit lines intersect; a sense amplifier configured to amplify, in a read operation mode of the memory device, a voltage difference value between a voltage of a selected word line connected to a selected memory cell of the plurality of memory cells and a reference voltage; and a leakage current compensation circuit connected to a selected word line path between the selected memory cell and the sense amplifier and configured to compensate for a total leakage current generated by unselected memory cells connected to the selected word line in the read operation mode.

Abstract: In some example embodiments, a program pulse is applied to a resistive memory cell and a plurality of post pulses are applied to the resistive memory cell at a time point after a relaxation time from a time point when application of the program pulse is finished, the plurality of post pulses having voltage levels that increase sequentially. Programming speed and/or performance of the resistive memory device may be enhanced by accelerating resistance drift of the resistive memory cell using the plurality of post pulses having the voltage levels that increase sequentially.

Abstract: Described herein are boron-containing precursor compounds, and compositions and methods comprising same, for forming boron-containing films. In one aspect, the film is deposited from at least one precursor having the following Formula I or II described herein.

Abstract: A memory device includes a memory cell array including a plurality of memory cells arranged at points where a plurality of word lines and a plurality of bit lines intersect; a sense amplifier configured to amplify, in a read operation mode of the memory device, a voltage difference value between a voltage of a selected word line connected to a selected memory cell of the plurality of memory cells and a reference voltage; and a leakage current compensation circuit connected to a selected word line path between the selected memory cell and the sense amplifier and configured to compensate for a total leakage current generated by unselected memory cells connected to the selected word line in the read operation mode.

Abstract: Described herein are boron-containing precursor compounds, and compositions and methods comprising same, for forming boron-containing films. In one aspect, the film is deposited from at least one precursor having the following Formula I or II described herein.

Abstract: Described herein are methods for forming a Group 13 metal or metalloid nitride film. In one aspect, there is provided a method of forming an aluminum nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one aluminum precursor which reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising non-hydrogen containing nitrogen plasma into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2; and optionally purge the reactor with an inert gas; and wherein the steps are repeated until a desired thickness of the aluminum nitride film is obtained.

Abstract: In some example embodiments, a program pulse is applied to a resistive memory cell and a plurality of post pulses are applied to the resistive memory cell at a time point after a relaxation time from a time point when application of the program pulse is finished, the plurality of post pulses having voltage levels that increase sequentially. Programming speed and/or performance of the resistive memory device may be enhanced by accelerating resistance drift of the resistive memory cell using the plurality of post pulses having the voltage levels that increase sequentially.

Abstract: A composition and method for using the composition in the fabrication of an electronic device are disclosed. Compounds, compositions and methods for depositing a low dielectric constant (<4.0) and high oxygen ash resistance silicon-containing film such as, without limitation, a carbon doped silicon oxide, are disclosed.

Abstract: A memory device and an operating method thereof are provided. The memory device includes: a memory cell array including a plurality of memory cells respectively arranged at points at which a plurality of word lines and a plurality of bit lines cross; and a control logic circuit configured to precharge a select word line connected to a selected memory cell and precharge a select bit line connected to the selected memory cell in a read operation, wherein the control logic circuit is further configured to precharge a first unselect word line among unselect word lines to a second voltage when the select word line is precharged to a first voltage, a level of the first voltage is lower than a level of a third voltage applied to an unselect bit line when the select word line is precharged to the first voltage, and a level of the second voltage is higher than the level of the third voltage.

Abstract: A composition and method for using the composition in the fabrication of an electronic device are disclosed. Compounds, compositions and methods for depositing a high quality silicon nitride or carbon doped silicon nitride.

Abstract: A composition and method for using the composition in the fabrication of an electronic device are disclosed. Compounds, compositions and methods for depositing a low dielectric constant (<5.0) and high oxygen ash resistance silicon-containing film such as, without limitation, a carbon doped silicon oxide, are disclosed.

Abstract: An automatic batting training apparatus includes: a bottom part; a hopper assembly disposed on one side of the bottom part to sequentially discharge a plurality of balls stored therein; and a driving assembly disposed on the other side of the bottom part and including a transfer module adapted to transfer the balls discharged from the hopper assembly in a vertical direction and an ascending/descending module having a tee stand disposed movable upward and downward in such a manner as to allow the balls received from the transfer module to be seated one by one onto top thereof to perform tee batting.

Abstract: Described herein are cobalt compounds, processes for making cobalt compounds, cobalt compounds used as precursors for depositing cobalt-containing films (e.g., cobalt, cobalt oxide, cobalt nitride, cobalt silicide etc.); and cobalt films. Examples of cobalt precursor compounds are bis(diazadiene)cobalt compounds. Examples of surfaces for deposition of metal-containing films include, but are not limited to, metals, metal oxides, metal nitrides, and metal silicates; silicon, silicon oxide and silicon nitride. Alkylated diazadiene ligands are used to form cobalt complexes which are used for selective deposition on certain surfaces and/or superior film properties such as uniformity, continuity, and low resistance.

Abstract: Provided is a bit error rate equalizing method of a memory device. The memory device selectively performs an error correction code (ECC) interleaving operation according to resistance distribution characteristics of memory cells, when writing a codeword including information data and a parity bit of the information data to a memory cell array. In the ECC interleaving operation according to one example, an ECC sector including information data is divided into a first ECC sub-sector and a second ECC sub-sector, the first ECC sub-sector is written to memory cells of a first memory area having a high bit error rate (BER), and the second ECC sub-sector is written to memory cells of a second memory area having a low BER.

Abstract: A memory device includes a memory cell array including a plurality of memory cells arranged at points where a plurality of word lines and a plurality of bit lines intersect; a sense amplifier configured to amplify, in a read operation mode of the memory device, a voltage difference value between a voltage of a selected word line connected to a selected memory cell of the plurality of memory cells and a reference voltage; and a leakage current compensation circuit connected to a selected word line path between the selected memory cell and the sense amplifier and configured to compensate for a total leakage current generated by unselected memory cells connected to the selected word line in the read operation mode.

Abstract: A voltage generator of a nonvolatile memory device includes a charging circuit, a current mirror circuit, a discharging circuit and an output circuit. The charging circuit amplifies a difference between a reference voltage and a feedback voltage to generate a first current. The current mirror circuit is connected to the charging circuit and generates a second current based on the first current. The discharging circuit is connected to the current mirror circuit to draw the second current, and discharges the output voltage to a target level by adjusting discharging amount of the second current based on a sensing voltage which reflects a change of the feedback voltage. The output circuit is connected to the current mirror circuit, and provides the output voltage based on the first current and the second current to a first word-line connected to an output node.

Abstract: Described herein are methods and compositions for forming a silicon-containing film or material such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film in a semiconductor deposition process, such as without limitation, a plasma enhanced atomic layer deposition of silicon-containing film.