Abstract: A non-volatile memory device includes access circuitry that selects a word line during an operation, applies a selected word line voltage to the selected word line, applies a non-selected word line voltage to non-selected word lines among the word lines, and applies a dummy word line voltage to the dummy word line. The dummy word line voltage is a first dummy word line voltage when the selected word line is not adjacent to the dummy word line and a second dummy word line voltage different from the first dummy word line voltage when the selected word line is adjacent to the dummy word line.

Abstract: Disclosed is a flash memory device having multiple strings, where each string includes first memory cells and second memory cells. One second memory cell of the second memory cells in each string is set to a programmed state, and remaining second memory cells are set to an erased state.

Abstract: Embodiments of the current invention include methods of forming a strontium titanate (SrTiO3) film using atomic layer deposition (ALD). More particularly, the method includes forming a plurality of titanium oxide (TiO2) unit films using ALD and forming a plurality of strontium oxide (SrO) unit films using ALD. The combined thickness of the TiO2 and SrO unit films is less than approximately 5 angstroms. The TiO2 and SrO units films are then annealed to form a strontium titanate layer.

Abstract: A method of providing an operating voltage in a memory device includes applying a read voltage to a selected word line while applying a first pass voltage to at least one unselected word line among word lines adjacent to the selected word line; and while applying a second pass voltage to the remaining unselected word lines (other than the at least one unselected word line to which the first pass voltage is applied). The level of the first pass voltage is higher than the level of the second pass voltage. The level of the first pass voltage may be set based on the level of the read voltage.

Abstract: Sterically hindered imidazole ligands are described, along with their synthesis, which are capable of coordinating to Group 2 metals, such as: calcium, magnesium, strontium, in an eta-5 coordination mode which permits the formation of monomeric or dimeric volatile complexes. A compound comprising one or more polysubstituted imidazolate anions coordinated to a metal selected from the group consisting of barium, strontium, magnesium, radium or calcium or mixtures thereof. Alternatively, one anion can be substituted with and a second non-imidazolate anion.

Abstract: A cyclic deposition process to make a metal oxide film on a substrate, which comprises the steps: introducing a metal ketoiminate into a deposition chamber and depositing the metal ketoiminate on a heated substrate; purging the deposition chamber to remove unreacted metal ketominate and any byproduct; introducing an oxygen-containing source to the heated substrate; purging the deposition chamber to remove any unreacted chemical and byproduct; and, repeating the cyclic deposition process until a desired thickness of film is established.

Abstract: A method of programming a flash memory includes programming memory cells connected to a selected word line by applying a first voltage to the selected word line and a second voltage to non-selected word lines, the second voltage being lower than the first voltage, lowering the first voltage of the selected word line to a third voltage after programming the memory cells connected to the selected word line, the third voltage being lower than the first voltage, and recovering a fourth voltage of the selected word line and the non-selected word lines, the fourth voltage being lower than the second and third voltages.

Abstract: Nonvolatile memory devices, memory systems and related methods of operating nonvolatile memory devices are presented. During a programming operation, the nonvolatile memory device is capable of using bit line forcing, and is also capable of selecting a verification mode for use during a verification operation from a group of verification modes on the basis of an evaluated programming condition.

Abstract: Disclosed herein are a method for preparation of an inclusion-complex including a physiologically active hydrophobic substance in cjclodextrin and a derivative thereof, and use of the inclusion-complex prepared by the same. More particularly, the present invention provides a method for preparing an inclusion-complex, which includes agitating cjclodextrin and a derivative thereof in an agitator at high speed, spraying a physiologically active hydrophobic substance dissolved in alcohol onto the agitator, and drying and crushing the mixture obtained from the preceding step and, in addition, use of the prepared inclusion-complex. The present inventive method has merits of reduced inclusion time and increased inclusion rate. The prepared inclusion-complex has excellent cell and collagen proliferation effects compared to physiologically active hydrophobic substances which were not inclusion processed, thereby being used in production of a cosmetic composition with improved anti-wrinkle and anti-ageing effects.

Abstract: A method for forming metal-containing films by atomic layer deposition using precursors of the formula: M(OR1)(OR2)(R3C(O)C(R4)C(O)XR5y)2 wherein M is Group 4 metals; wherein R1 and R2 can be same or different selected from the group consisting of a linear or branched C1-10 alkyl and a C6-12 aryl; R3 can be selected from the group consisting of linear or branched C1-10 alkyls, preferably C1-3 alkyls and a C6-12 aryl; R4 is selected from the group consisting of hydrogen, C1-10 alkyls, and a C6-12 aryl, preferably hydrogen; R5 is selected from the group consisting of C1-10 linear or branched alkyls, and a C6-12 aryl, preferably a methyl or ethyl group; X?O or N wherein when X?O, y=1 and R1, 2 and 5 are the same, when X?N, y=2 and each R5 can be the same or different.

Abstract: The present invention is related to a family of Group 4 metal precursors represented by the formula: M(OR1)2(R2C(O)C(R3)C(O)OR1)2 wherein M is a Group 4 metals of Ti, Zr, or Hf; wherein R1 is selected from the group consisting of a linear or branched C1-10 alkyl and a C6-12 aryl, preferably methyl, ethyl or n-propyl; R2 is selected from the group consisting of branched C3-10 alkyls, preferably iso-propyl, tert-butyl, sec-butyl, iso-butyl, or tert-amyl and a C6-12 aryl; R3 is selected from the group consisting of hydrogen, C1-10 alkyls, and a C6-12 aryl, preferably hydrogen. In a preferred embodiment of this invention, the precursor is a liquid or a solid with a melting point below 60° C.

Abstract: The flash memory device includes a memory cell array having a plurality of memory cells, a high voltage generator configured to generate a plurality of pass voltages, with a first pass voltage of the plurality of pass voltages supplied to the memory cell array during a programming operation; and a main controller including a voltage controller configured to shift the first pass voltage at a plurality of time intervals during the programming operation.

Abstract: A method of programming a flash memory device comprises programming selected memory cells, performing a verification operation to determine whether the selected memory cells have reached a target program state, and determining a start point of the verification operation based on a programming characteristic associated with a detection of a pass bit during programming of an initial program state.

Abstract: Provided is a program method of a multi-bit flash memory device. The program method includes correspondingly programming multi-bit data into selected memory cells through pluralities of programming loops. In each programming loop, an increment of a programming voltage applied to the selected memory cells is variable in accordance with a result of program-verification to each of data states with the multi-bit data and the program-verification for the data state corresponding to program-pass is skipped if the result of the program-verification to the data state is passed.

Abstract: A flash memory device comprises a memory cell array comprising memory cells arranged in rows and columns. A first page of data is programmed in selected memory cells of the memory cell array, and a second page of data is subsequently programmed in the selected memory cells. The first page of data is programmed using a program voltage having a first start value, and the second page of data is programmed using a program voltage having a second start value determined by a programming characteristic of the selected memory cells.

Abstract: A nonvolatile memory device detects a first memory cell to be successfully programmed in a program operation for multiple memory cells connected to a wordline, and then detects a number of program loops required to successfully program the remaining memory cells connected to the wordline. An initial program voltage of subsequent program operations is then adjusted based on the detected number of loops.

Abstract: Provided are a non-volatile memory device and a method of programming the same. The method includes: performing a program operation; performing a program verify read operation; and performing a pass/fail determine operation simultaneously with one of a verify recovery operation and a bit line setup operation, after the performing of the program verify read operation.

Abstract: Embodiments of the current invention include methods of forming a strontium titanate (SrTiO3) film using atomic layer deposition (ALD). More particularly, the method includes forming a plurality of titanium oxide (TiO2) unit films using ALD and forming a plurality of strontium oxide (SrO) unit films using ALD. The combined thickness of the TiO2 and SrO unit films is less than approximately 5 angstroms. The TiO2 and SrO units films are then annealed to form a strontium titanate layer.

Abstract: Embodiments of the current invention include methods of forming a strontium titanate (SrTiO3) film using atomic layer deposition (ALD). More particularly, the method includes forming a plurality of titanium oxide (TiO2) unit films using ALD and forming a plurality of strontium oxide (SrO) unit films using ALD. The combined thickness of the TiO2 and SrO unit films is less than approximately 5 angstroms. The TiO2 and SrO units films are then annealed to form a strontium titanate layer.

Abstract: A method of programming a flash memory includes programming memory cells connected to a selected word line by applying a first voltage to the selected word line and a second voltage to non-selected word lines, the second voltage being lower than the first voltage, lowering the first voltage of the selected word line to a third voltage after programming the memory cells connected to the selected word line, the third voltage being lower than the first voltage, and recovering a fourth voltage of the selected word line and the non-selected word lines, the fourth voltage being lower than the second and third voltages.