Abstract: A method of processing signals from an image sensor outputting signals from rows of pixels in the image sensor having optical signals, outputting signals from rows of pixels in the image sensor not having optical signals, and correcting the signals from the rows of pixels having optical signals based on the signals corresponding to the rows of pixels not having optical signals.

Abstract: A linear-logarithmic image sensor includes a pixel array, a signal generation unit, and a control unit. The pixel array includes at least one unit pixel that generates a leakage signal corresponding to leakage photo-charges and that sequentially generates a first analog signal corresponding to a portion of accumulated photo-charges and a second analog signal corresponding to a whole of the accumulated photo-charges by resetting a floating diffusion node and transferring the accumulated photo-charges from a storage node to the floating diffusion node in response to first and second transfer control signals that are sequentially activated. The signal generation unit includes at least one signal generation block that generates a final analog signal based on the leakage signal, the first analog signal, and the second analog signal. The control unit controls the pixel array and the signal generation unit.

Abstract: Example embodiments relate to an image sensor supporting a global shutter for minimizing image distortion. An example image sensor includes a semiconductor layer having a first surface and a second surface that are opposite to each other; a photosensitive device, which is formed in the semiconductor layer near the first surface and accumulates charges based on light incident via the second surface; a charge storage device, which is formed in the semiconductor layer near the first surface and temporarily stores charges accumulated by the photosensitive device; a first transmission transistor, which transmits charges accumulated by the photosensitive device to the charge storage device and includes a first gate formed on the first surface of the semiconductor layer; and a leakage photogenerated charge drain region, which is formed in the semiconductor layer near the second surface, is apart from the charge storage device, and is arranged above the charge storage device.

Abstract: A depth pixel includes a photo detection region, first and second photo gates and first and second floating diffusion regions. The photo detection region collects photo charges based on light reflected by an object. The collected photo charges are drifted in a first direction and a second direction different from the first direction based on an internal electric field in the photo detection region. The first photo gate is activated in response to a first photo control signal. The first floating diffusion region accumulates first photo charges drifted in the first direction if the first photo gate is activated. The second photo gate is activated in response to the first photo control signal. The second floating diffusion region accumulates second photo charges drifted in the second direction if the second photo gate is activated.

Abstract: An image sensor is provided including a pixel array, a correlated double sampling (CDS) unit, an analog-digital converting (ADC) unit, a control unit, and an overflow power voltage control unit. The pixel array includes at least one unit pixel that generates accumulated charges corresponding to incident light in a photoelectric conversion period and outputs an analog signal based on the accumulated charges in a readout period. The CDS unit generates an image signal by performing a CDS operation on the analog signal. An ADC unit converts the image signal into a digital signal. A control unit controls the pixel array, the CDS unit, and the ADC unit. An overflow power voltage control unit controls an overflow power voltage to have a low voltage level in the photoelectric conversion period and controls the overflow power voltage to have a high voltage level in the readout period.

Abstract: An image sensor includes a light-electron conversion unit, a signal generation unit, and a selection unit. The light-electron conversion unit generates photo-charges from incident light. The signal generation unit accumulates photo-charges from the converter in a storage node during a detection period, and then generates a first analog signal and a second analog signal during an output period. The analog signals are generated based on an amount of photo-charges accumulated in the storage node. The selection unit generates an image signal based on one of the first analog signal and the second analog signal.

Abstract: Provided are a unit pixel, an image sensor including the same, a portable electronic device including the same, and a method of manufacturing the same. The method of manufacturing includes: forming a photoelectric conversion region in a substrate; forming, in the substrate, a first floating diffusion region spaced apart from the photoelectric conversion region of the substrate, and a second floating diffusion region spaced apart from the first floating diffusion region; forming a first recess spaced apart from the first floating diffusion region and the second floating diffusion region by removing a portion of the substrate from a first surface of the substrate; filling the first recess to form a dual conversion gain (DCG) gate that extends perpendicularly or substantially perpendicularly from the first surface of the substrate; and forming a conductive layer to fill an inside of the first recess.

Abstract: An apparatus and a method for capturing images are disclosed. The apparatus for capturing images includes an active pixel sensor (APS) array including a plurality of active pixels each including a photo diode and a storage diode, the plurality of active pixels being arranged in an array of N rows and M columns (where N and M are natural numbers of 2 or more), and an image signal processor that corrects an image signal output by the APS array. The APS array includes N pixel sensor rows, and the image signal processor removes noise from the image signal by using image signals that are sequentially output from non-adjacent ones of the pixel sensor rows.

Abstract: Pixel arrays of an image sensor that include a first pixel and a second pixel adjacent the first pixel are provided. The first pixel may include a first photoelectric conversion device, a first charge storage device, a first floating diffusion node and a first transfer gate. The second pixel may include a second photoelectric conversion device, a second charge storage device, a second floating diffusion node and a second transfer gate. The pixel arrays may also include a storage gate on both the first charge storage device and the second charge storage device. The storage gate may have a unitary structure.

Abstract: An image sensor includes a pixel array. The pixel array includes a plurality of sensing pixels and at least two focusing pixels adjacent to each other. Each of the sensing pixels is configured to output an image signal corresponding to an amount of light incident on the sensing pixels. The at least two focusing pixels are configured to output a focusing signal corresponding to a phase difference between light incident on the at least two focusing pixels. Each of the sensing pixels and the at least two focusing pixels includes a semiconductor layer including a photodetecting device. Each of the sensing pixels includes a light guide which guides incident light toward the photodetecting device, and each of the at least two focusing pixels does not include the light guide.

Abstract: An image sensor capable of boosting a voltage of a floating diffusion node is provided. The image sensor includes a floating diffusion node and a storage element which are in a semiconductor substrate. The image sensor includes a first light-shielding material formed over the floating diffusion node, and a second light-shielding material formed over the storage diode. The second light-shielding material is separated from the first light-shielding material. The image sensor also includes a first voltage supply line configured to apply a first voltage to the first light-shielding material and a second voltage supply line configured to apply a second voltage lower than the first voltage to the second light-shielding material.

Abstract: An image sensor includes a pixel array including at least one unit pixel configured to generate accumulated charges, a correlated double sampler configured to perform a correlated double sampling operation to extract an effective signal component based on a signal component and a reset component from the unit pixel for at least first and second read-out periods, the correlated double sampler configured to read out an image signal during the first read-out period and to read out a light noise signal during the second read-out period, an analog-digital converter configured to convert the image signal into a first digital signal and to convert the light noise signal into a second digital signal and an image compensator configured to generate a compensated image signal based on the second digital signal and the first digital signal.

Abstract: A linear-logarithmic image sensor includes a pixel array, a signal generation unit, and a control unit. The pixel array includes at least one unit pixel that generates a leakage signal corresponding to leakage photo-charges and that sequentially generates a first analog signal corresponding to a portion of accumulated photo-charges and a second analog signal corresponding to a whole of the accumulated photo-charges by resetting a floating diffusion node and transferring the accumulated photo-charges from a storage node to the floating diffusion node in response to first and second transfer control signals that are sequentially activated. The signal generation unit includes at least one signal generation block that generates a final analog signal based on the leakage signal, the first analog signal, and the second analog signal. The control unit controls the pixel array and the signal generation unit.

Abstract: Provided are a unit pixel, an image sensor including the same, a portable electronic device including the same, and a method of manufacturing the same. The method of manufacturing includes: forming a photoelectric conversion region in a substrate; forming, in the substrate, a first floating diffusion region spaced apart from the photoelectric conversion region of the substrate, and a second floating diffusion region spaced apart from the first floating diffusion region; forming a first recess spaced apart from the first floating diffusion region and the second floating diffusion region by removing a portion of the substrate from a first surface of the substrate; filling the first recess to form a dual conversion gain (DCG) gate that extends perpendicularly or substantially perpendicularly from the first surface of the substrate; and forming a conductive layer to fill an inside of the first recess.

Abstract: Provided are an image sensor and a method of manufacturing the same. The method may include forming a photo-electric conversion region and a charge storage region in a semiconductor layer; forming a transistor on a front surface of the semiconductor layer; forming a recess by etching a portion of the semiconductor layer between the charge storage region and a rear surface of the semiconductor layer; and forming on a bottom surface of the recess a shield film that blocks light incident on the charge storage region.

Abstract: A method of processing signals from an image sensor outputting signals from rows of pixels in the image sensor having optical signals, outputting signals from rows of pixels in the image sensor not having optical signals, and correcting the signals from the rows of pixels having optical signals based on the signals corresponding to the rows of pixels not having optical signals.

Abstract: Provided are an image sensor and an image capturing apparatus including the image sensor. The image sensor includes a pixel array including: multiple sensing pixels outputting image signals respectively corresponding to intensities of incident light; and at least one pair of focusing pixels that are adjacent each other, and each outputting a phase difference of the incident light as a focusing signal; wherein each focusing pixel includes: a semiconductor layer including a photodetecting device accumulating electric charges generated according to absorbed light from among the incident light; a wiring layer formed on a first surface of the semiconductor layer and including wirings; a planarization layer having a first surface on a second surface of the semiconductor layer; a shielding layer formed in the planarization layer to block some of the incident light to be incident to the photodetecting device; and a color filter layer and a micro lens layer.

Abstract: A 3D image sensor includes a depth pixel that includes; a photo detector generating photo-charge, first and second floating diffusion regions, a first transfer transistor transferring photo-charge to the first floating diffusion region during a first transfer period in response to a first transfer gate signal, a second transfer transistor transferring photo-charge to the second floating diffusion region during a second transfer period in response to a second transfer gate signal, and an overflow transistor that discharges surplus photo-charge in response to a drive gate signal. Control logic unit controlling operation of the depth pixel includes a first logic element providing the first transfer gate signal, a second logic element providing the second transfer gate signal, and another logic element providing the drive gate signal to the overflow transistor when the first transfer period overlaps, at least in part, the second transfer period.

Abstract: A unit pixel for an image sensor includes an accumulation circuit configured to generate an accumulated dark current by accumulating a charge corresponding to a dark current during a time of flight (TOF), the accumulation circuit being optically shaded to generate the dark current, an output voltage generation circuit configured to generate and output an output voltage corresponding to the TOF based on a charge corresponding to the accumulated dark current, a control circuit configured to control an operation of the output voltage generation circuit based on a light signal that is input to the unit pixel after being reflected by an object, the light signal being emitted by a light source, and an initialization circuit configured to initialize the accumulation circuit at a predetermined cycle.

Abstract: An image sensor may include a photodiode configured to convert an optical signal into photogenerated charge, a sensing node adjacent to the photodiode and configured to sense the photogenerated charge, a read-out circuit configured to convert the photogenerated charge into an electrical signal and to output the electrical signal through an output line, and/or at least one capacitor formed between the sensing node and a conversion gain control line. The conversion gain control line corresponding to the at least one capacitor may be selectively connected to a ground line or the output line based on at least one control signal.