Abstract: Provided are a pixel circuit, a photoelectric converter, and an image sensing system thereof. The pixel circuit includes a photodiode and an output unit. The photodiode generates a first photo charge to detect the distance from an object and a second photo charge to detect the color of the object. The output unit generates at least one depth signal used to detect the distance based on the first photo charge generated by the photodiode, and a color signal used to detect the color of the object based on the second photo charge.

Abstract: A pixel circuit array may include pixel circuits and/or a global reset transistor that has a first end connected to a second end of a reset transistor and is turned on or off in response a global reset signal. Each pixel circuit may include: a transmission transistor that may receive and/or transmit photocharges through ends of the transmission transistor in response to a transmission control signal; the reset transistor that may have a first end connected to the second end of the transmission transistor and may be turned on or off in response a reset control signal; a source-follower transistor that may receive a signal from the second end of the reset transistor and/or may be turned on or off in response the received signal; and/or a selection transistor that may be connected to the source-follower transistor and/or may be turned on or off in response a selection control signal.

Abstract: An image sensor includes a photoelectric converter, a reflector, and a charge carrier guiding region. The reflector is disposed under the photoelectric converter, and the charge carrier guiding region is disposed between the photoelectric converter and the reflector. The reflector reflects incident light passed by the photoelectric converter back through the photoelectric converter for increasing photoelectric conversion efficiency and reduced crosstalk. The charge carrier guiding region dissipates undesired charge carriers for further increasing photoelectric conversion efficiency.

Abstract: Disclosed is a method for integrating an image sensor capable of removing a flicker noise without causing any burdens on a hardware due to setting up additional logics. The method for integrating an exposure time of an image sensor employing a line scan method, including the steps of: performing an integration to a first line when an integer multiple of a light source frequency is different from an integration time; and performing an integration to a second line at a phase substantially equal to a phase in which the integration to the first line is started.

Abstract: Disclosed is a method for integrating an image sensor capable of removing a flicker noise without causing any burdens on a hardware due to setting up additional logics. The method for integrating an exposure time of an image sensor employing a line scan method, including the steps of: performing an integration to a first line when an integer multiple of a light source frequency is different from an integration time; and performing an integration to a second line at a phase substantially equal to a phase in which the integration to the first line is started.

Abstract: Disclosed is a method for integrating an image sensor capable of removing a flicker noise without causing any burdens on a hardware due to setting up additional logics. The method for integrating an exposure time of an image sensor employing a line scan method, including the steps of: performing an integration to a first line when an integer multiple of a light source frequency is different from an integration time; and performing an integration to a second line at a phase substantially equal to a phase in which the integration to the first line is started.

Abstract: A shorted anode lateral insulated gate bipolar transistor includes a semiconductor layer of a first conductivity type, a first current electrode, a second current electrode, a first insulation layer, a first gate electrode, a second gate electrode, a first high concentration impurity region of a second conductivity type, a low concentration impurity region of the second conductivity type, a first high concentration impurity region of the first conductivity type, a second high concentration impurity region of the second conductivity type, a third high concentration impurity region of the second conductivity type, and a second high concentration impurity region of the first conductivity type.