Patents by Inventor Moon Gyu Han

Moon Gyu Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250227971
    Abstract: A quantum dot including a Group IIIA element and a Group VA element of the periodic table of elements, wherein the quantum dot has an absorption peak wavelength of greater than or equal to about 1,000 nm in a visible-infrared (Vis-IR) absorption spectrum, and includes a ligand derived from an aliphatic hydrocarbon compound substituted with a hydroxyl group (—OH) and a thiol group (—SH) on its surface, a method for preparing the quantum dot, and an electronic device including the quantum dot.
    Type: Application
    Filed: January 8, 2025
    Publication date: July 10, 2025
    Inventors: Moon Gyu HAN, Sohee Jeong, Meeree Kim, Heejae Lee, Shin Ae Jun, Seung Hwa Hong
  • Patent number: 12193252
    Abstract: A light emitting device includes: a first electrode and a second electrode with a surface facing the first electrode; an emission layer disposed between the first electrode and the second electrode and including a quantum dot (e.g., a plurality of quantum dots); and an electron auxiliary layer disposed between the emission layer and the second electrode. The electron auxiliary layer includes a first layer including a first metal oxide, and a second layer disposed on the first layer and including a second metal oxide. A roughness of an interface between the second layer and the second electrode is less than about 10 nm as determined by an electron microscopy analysis. An absolute value of a difference between a conduction band edge energy level of the second layer and a work function of the second electrode may be less than or equal to about 0.5 eV, and a conduction band edge energy level of the first layer may be less than the conduction band edge energy level of the second layer.
    Type: Grant
    Filed: April 14, 2023
    Date of Patent: January 7, 2025
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Heejae Lee, Sung Woo Kim, Eun Joo Jang, Dae Young Chung, Moon Gyu Han
  • Publication number: 20240357849
    Abstract: A method of manufacturing a patterned film includes forming a first film including a semiconductor nanoparticle and an additive, wherein the additive includes a polythiol compound, the semiconductor nanoparticle includes an organic ligand (for example, on a surface thereof), and the organic ligand includes a first functional group bonded to the surface of the semiconductor nanoparticle and a carbon-carbon unsaturated bond; exposing a portion of the first film to a radiation to cause a change in a solubility of the semiconductor nanoparticle in the exposed area with respect to a first solvent; contacting the radiation treated film with the first solvent to remove at least a portion of an unexposed area of the radiation treated film to obtain a patterned film. A light emitting device includes such a patterned film as a light emitting layer.
    Type: Application
    Filed: April 17, 2024
    Publication date: October 24, 2024
    Inventors: Moon Gyu HAN, Himchan CHO, Tae Ho KIM, Seongkyu MAENG, Sun Jae PARK, Shin Ae JUN
  • Publication number: 20240293031
    Abstract: A photoacoustic and ultrasonic imaging device includes a laser light source configured to generate a laser, an ultrasonic wave source configured to generate an ultrasonic wave generation signal, an imaging probe including a laser emitter configured to receive the laser and emit the laser to a target and an ultrasonic transducer configured to receive the ultrasonic wave generation signal, emit an ultrasonic wave to the target, and detect a photoacoustic signal and an ultrasonic signal generated and reflected from the target, and an operation unit configured to form an image of tissue in the target from the laser and an image of the tissue in the target from the ultrasonic wave on the basis of the photoacoustic signal and the ultrasonic signal detected by the ultrasonic transducer.
    Type: Application
    Filed: September 2, 2021
    Publication date: September 5, 2024
    Inventors: Chul Hong KIM, Won Seok CHOI, Eun Yeong PARK, Seung Wan JEON, Chang Yeop LEE, Moon Gyu HAN
  • Publication number: 20240224562
    Abstract: Disclosed are an electroluminescent device including a first electrode and a second electrode spaced apart from each other; a light-emitting layer disposed between the first and second electrodes; and an electron transport layer between the light-emitting layer and the second electrode; a production method thereof; and a display device including the same. The light-emitting layer includes a semiconductor nanoparticle, the electron transport layer includes a zinc oxide nanoparticle having a size of 1 nm or more to 15 nm or less, and the zinc oxide nanoparticle further includes magnesium and aluminum, and an amount of aluminum in the zinc oxide nanoparticle is greater than or equal to about 0.5 mol % and less than or equal to about 30 mol % based on a total amount of zinc, magnesium, and aluminum.
    Type: Application
    Filed: December 29, 2023
    Publication date: July 4, 2024
    Inventors: Chan Su KIM, Sung Woo KIM, Ilyoung LEE, You Jung CHUNG, Moon Gyu HAN
  • Publication number: 20240224796
    Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode and including a plurality of quantum dots and a first hole transporting material having a substituted or unsubstituted C4 to C20 alkyl group attached to a backbone structure; a hole transport layer disposed between the emission layer and the first electrode and including a second hole transporting material; and an electron transport layer disposed between the emission layer and the second electrode.
    Type: Application
    Filed: March 8, 2024
    Publication date: July 4, 2024
    Inventors: Moon Gyu HAN, Dae Young CHUNG, Kwanghee KIM, Eun Joo JANG, Chan Su KIM, Kun Su PARK, Won Sik YOON
  • Publication number: 20240215283
    Abstract: A quantum dot light-emitting device including first electrode and a second electrode, a quantum dot layer between the first electrode and the second electrode, a first electron transport layer and a second electron layer disposed between the quantum dot layer and the second electrode. The second electron transport layer is disposed between the quantum dot layer and the first electron transport layer, wherein each of the first electron transport layer and the second electron transport layer includes an inorganic material. A lowest unoccupied molecular orbital energy level of the second electron transport layer is shallower than a lowest unoccupied molecular orbital energy level of the first electron transport layer, and a lowest unoccupied molecular orbital energy level of the quantum dot layer is shallower than a lowest unoccupied molecular orbital energy level of the second electron transport layer. An electronic device including the quantum dot light-emitting device.
    Type: Application
    Filed: January 23, 2024
    Publication date: June 27, 2024
    Inventors: Moon Gyu HAN, Heejae LEE, Eun Joo JANG, Tae Ho KIM, Kun Su PARK, Won Sik YOON, Hyo Sook JANG
  • Patent number: 12016190
    Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode and including a plurality of quantum dots and a first hole transporting material having a substituted or unsubstituted C4 to C20 alkyl group attached to a backbone structure; a hole transport layer disposed between the emission layer and the first electrode and including a second hole transporting material; and an electron transport layer disposed between the emission layer and the second electrode.
    Type: Grant
    Filed: May 12, 2021
    Date of Patent: June 18, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Moon Gyu Han, Dae Young Chung, Kwanghee Kim, Eun Joo Jang, Chan Su Kim, Kun Su Park, Won Sik Yoon
  • Patent number: 12016241
    Abstract: A quantum dot device including a first electrode and a second electrode each having a surface opposite the other, a quantum dot layer disposed between the first electrode and the second electrode, an electron transport layer disposed between the quantum dot layer and the second electrode and including first inorganic nanoparticles and a first organic material, and an electron injection layer disposed between the electron transport layer and the second electrode and including second inorganic nanoparticles and a second organic material, wherein a ratio by weight of an amount of the second organic material to a total amount of the second inorganic nanoparticles and the second organic material in the electron injection layer is less than a ratio by weight of an amount of the first organic material to a total amount of the first inorganic nanoparticles and the first organic material in the electron transport layer. An electronic device including the quantum dot device.
    Type: Grant
    Filed: February 9, 2021
    Date of Patent: June 18, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Won Sik Yoon, Moon Gyu Han, Kwanghee Kim, Heejae Lee, Eun Joo Jang, Tae Hyung Kim, Hyo Sook Jang
  • Patent number: 11957046
    Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode and including a plurality of quantum dots and a first hole transporting material having a substituted or unsubstituted C4 to C20 alkyl group attached to a backbone structure; a hole transport layer disposed between the emission layer and the first electrode and including a second hole transporting material; and an electron transport layer disposed between the emission layer and the second electrode.
    Type: Grant
    Filed: September 6, 2019
    Date of Patent: April 9, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Moon Gyu Han, Dae Young Chung, Kwanghee Kim, Eun Joo Jang, Chan Su Kim, Kun Su Park, Won Sik Yoon
  • Publication number: 20240099045
    Abstract: Provided are an electroluminescent device, a method of manufacturing the same, and a display device including the same, the electroluminescent device including a first electron auxiliary layer, a first light emitting layer, and a first electrode disposed on a first surface of a transparent electrode; and a second electron auxiliary layer, a second light emitting layer, and a second electrode disposed on a second surface of the transparent electrode, wherein the first electron auxiliary layer and the second electron auxiliary layer each include a plurality of zinc oxide nanoparticles, a ratio (t1/t0) of a thickness (t1) of the first electron auxiliary layer to a thickness (t0) of the transparent electrode and a ratio (t2/t0) of a thickness (t2) of the second electron auxiliary layer to the thickness (t0) of the transparent electrode are each in the range of about 0.1 to about 4.0.
    Type: Application
    Filed: September 13, 2023
    Publication date: March 21, 2024
    Inventors: Heejae LEE, Tae Ho KIM, Jun-Mo YOO, Ilyoung LEE, Shin Ae JUN, Dae Young CHUNG, Moon Gyu HAN
  • Publication number: 20240090252
    Abstract: An electroluminescent device including a first electrode and a second electrode facing each other; a light emitting layer disposed between the first electrode and the second electrode; and an electron transport layer disposed between the light emitting layer and the second electrode. The light emitting layer includes a plurality of semiconductor nanoparticles, and the electron transport layer includes a plurality of zinc oxide nanoparticles, the zinc oxide nanoparticles further include magnesium and gallium.
    Type: Application
    Filed: September 8, 2023
    Publication date: March 14, 2024
    Inventors: Sung Woo KIM, Tae Ho KIM, You Jung CHUNG, Taehyung KIM, Ilyoung LEE, Heejae LEE, Moon Gyu HAN
  • Patent number: 11925043
    Abstract: A quantum dot light-emitting device including first electrode and a second electrode, a quantum dot layer between the first electrode and the second electrode, a first electron transport layer and a second electron layer disposed between the quantum dot layer and the second electrode. The second electron transport layer is disposed between the quantum dot layer and the first electron transport layer, wherein each of the first electron transport layer and the second electron transport layer includes an inorganic material. A lowest unoccupied molecular orbital energy level of the second electron transport layer is shallower than a lowest unoccupied molecular orbital energy level of the first electron transport layer, and a lowest unoccupied molecular orbital energy level of the quantum dot layer is shallower than a lowest unoccupied molecular orbital energy level of the second electron transport layer. An electronic device including the quantum dot light-emitting device.
    Type: Grant
    Filed: October 16, 2020
    Date of Patent: March 5, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Moon Gyu Han, Heejae Lee, Eun Joo Jang, Tae Ho Kim, Kun Su Park, Won Sik Yoon, Hyo Sook Jang
  • Patent number: 11871594
    Abstract: An electroluminescent device and a display device including the electroluminescent device. The electroluminescent device includes a first electrode and a second electrode each having a surface opposite the other; a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer including quantum dots; and an electron transport layer disposed between the light emitting layer and the second electrode, the electron transport layer including inorganic material nanoparticles including an anion dopant including P, N, C, Cl, F, Br, S, or a combination thereof.
    Type: Grant
    Filed: October 19, 2022
    Date of Patent: January 9, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung woo Kim, Moon Gyu Han, Eun joo Jang, Kun su Park
  • Patent number: 11858911
    Abstract: A squarylium compound has high transmittance in a visible wavelength spectrum of light and is configured to selectively absorb light in an infrared/near infrared wavelength spectrum of light.
    Type: Grant
    Filed: February 17, 2022
    Date of Patent: January 2, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Moon Gyu Han, Kyung Bae Park, Dongseon Lee, Yong Wan Jin, Chul Joon Heo
  • Patent number: 11812627
    Abstract: A quantum dot device including an anode; a cathode disposed substantially opposite to the anode; a hole injection layer disposed on the anode between the anode and the cathode; a hole transport layer disposed on the hole injection layer between the hole injection layer and the cathode; and a quantum dot layer disposed on the hole transport layer between the hole transport layer and the cathode, wherein the quantum dot layer includes a plurality of quantum dots, wherein the hole transport layer includes a hole transport material and an electron transport material, and wherein a lowest unoccupied molecular orbital (LUMO) energy level of the electron transport material and a lowest unoccupied molecular orbital (LUMO) energy level of the quantum dot layer is about 0.5 electron volts or less.
    Type: Grant
    Filed: October 27, 2021
    Date of Patent: November 7, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hongkyu Seo, Eun Joo Jang, Moon Gyu Han, Tae Ho Kim, Dae Young Chung
  • Publication number: 20230345753
    Abstract: An electroluminescent device including a light emitting layer disposed between a first electrode and a second electrode, and an electron transport layer disposed between the multi-layered light emitting film and the second electrode, where the multi-layered light emitting film includes a first layer and a second layer disposed on the first layer, the first layer including a plurality of first semiconductor nanoparticles surrounded by a p-type organic semiconductor polymer, and the second layer including a plurality of second semiconductor nanoparticles
    Type: Application
    Filed: April 21, 2023
    Publication date: October 26, 2023
    Inventors: Moon Gyu HAN, Dae Young CHUNG, Taehyung KIM, Heejae LEE
  • Publication number: 20230276643
    Abstract: A light emitting device includes: a first electrode and a second electrode with a surface facing the first electrode; an emission layer disposed between the first electrode and the second electrode and including a quantum dot (e.g., a plurality of quantum dots); and an electron auxiliary layer disposed between the emission layer and the second electrode. The electron auxiliary layer includes a first layer including a first metal oxide, and a second layer disposed on the first layer and including a second metal oxide. A roughness of an interface between the second layer and the second electrode is less than about 10 nm as determined by an electron microscopy analysis. An absolute value of a difference between a conduction band edge energy level of the second layer and a work function of the second electrode may be less than or equal to about 0.5 eV, and a conduction band edge energy level of the first layer may be less than the conduction band edge energy level of the second layer.
    Type: Application
    Filed: April 14, 2023
    Publication date: August 31, 2023
    Inventors: Heejae LEE, Sung Woo KIM, Eun Joo JANG, Dae Young CHUNG, Moon Gyu HAN
  • Patent number: 11737301
    Abstract: An electroluminescent device including a first electrode, a hole transport layer disposed on the first electrode, a first emission layer disposed on the hole transport layer, the first emission layer including a first light emitting particle on which a first ligand and a second ligand having a hole transporting property are attached, a second emission layer disposed on the first emission layer, the second emission layer including a second light emitting particle on which a first ligand and a third ligand having an electron transporting property are attached, an electron transport layer disposed on the second emission layer, and a second electrode disposed on the electron transport layer, wherein a solubility of the second ligand in a solvent is different than a solubility of the third ligand in the solvent and a display device including the same.
    Type: Grant
    Filed: April 9, 2021
    Date of Patent: August 22, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dae Young Chung, Moon Gyu Han, Oul Cho, Tae Hyung Kim, Sujin Park, Hongkyu Seo, Eun Joo Jang
  • Patent number: 11706936
    Abstract: A light emitting device including a first electrode and a second electrode spaced from each other, and, a light emitting film between the first electrode and the second electrode, wherein the light emitting film has a first surface facing the second electrode and a second surface opposite thereto, the light emitting film includes a quantum dot layer including a plurality of quantum dots and a matrix including a metal chalcogenide, the plurality of quantum dots includes selenium, the matrix covers at least a portion of the quantum dot layer, the metal chalcogenide comprises zinc and sulfur, and in an X-ray photoelectron spectroscopic analysis of the first surface of the light emitting film, a mole ratio of zinc with respect to selenium is greater than or equal to about 2:1 and a mole ratio of sulfur with respect to selenium is greater than or equal to about 1.1:1.
    Type: Grant
    Filed: October 21, 2022
    Date of Patent: July 18, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kwanghee Kim, Moon Gyu Han, Eun Joo Jang, Hyo Sook Jang