Abstract: Shutter disks for use in process chambers are provided herein. In some embodiments, a shutter disk for use in a process chamber may include a body having an outer perimeter, a top surface of the body, wherein the top surface includes a central portion having a substantially horizontal planar surface, and at least one angled structure disposed radially outward of the central portion, each of the at least one angled structure having a top portion and an angled surface disposed at a downward angle in a radially outward direction from the top portion toward the outer perimeter, and a bottom surface of the body.

Abstract: A removable case is provided with a latch that allows users to remove the case from a memory card slot or peripheral interface slot of an electronic device. The removable case can be used to enclose removable media or peripheral devices, such as wireless network interface controllers. When inserted into the memory card slot or peripheral interface slot, the removable case is designed to sit flush with the surface the electronic device.

Abstract: Embodiments of apparatus for supporting a substrate are disclosed herein. In some embodiments, an apparatus for supporting a substrate includes: a support surface; and a plurality of substrate contact elements protruding from the support surface, wherein the plurality of substrate contact elements are formed of a material having a hardness less than or equal to a hardness of silicon, having a low adhesion, having a coefficient of static friction large enough to prevent sliding, having a surface roughness less than or equal to 10 Ra, and that is electrically conductive.

Abstract: A removable case is provided with a latch that allows users to remove the case from a memory card slot or peripheral interface slot of an electronic device. The removable case can be used to enclose removable media or peripheral devices, such as wireless network interface controllers. When inserted into the memory card slot or peripheral interface slot, the removable case is designed to sit flush with the surface the electronic device.

Abstract: A substrate cleaning apparatus may include a substrate support member to support a substrate having a first side and a contaminated second side; a liquid carbon dioxide source; a gaseous carbon dioxide source; and one or more nozzles coupled to the liquid carbon dioxide source and to the gaseous carbon dioxide source, wherein the one or more nozzles are configured to receive liquid carbon dioxide and to discharge a first mixture of solid and gaseous carbon dioxide from the liquid carbon dioxide source to the second side of the substrate and to receive gaseous carbon dioxide and to discharge a second mixture of solid and gaseous carbon dioxide from the gaseous carbon dioxide source to the second side of the substrate. Methods of cleaning a substrate may be performed in the substrate cleaning apparatus.

Abstract: A substrate cleaning apparatus may include a substrate support having a support surface to support a substrate to be cleaned, wherein the substrate support is rotatable about a central axis normal to the support surface; a first nozzle to provide a first cleaning gas to a region of the inner volume corresponding to the position of an edge of the substrate when the substrate is supported by the support surface of the substrate support; a first annular body disposed opposite and spaced apart from the support surface of the substrate support by a gap, the first annular body having a central opening defined by an inner wall shaped to provide a reducing size of the gap between the first annular body and the support surface in a radially outward direction; and a first gas inlet to provide a first gas to the central opening of the first annular body.

Abstract: Shutter disks for use in process chambers are provided herein. In some embodiments, a shutter disk for use in a process chamber may include a body having an outer perimeter, a top surface of the body, wherein the top surface includes a central portion having a substantially horizontal planar surface, and at least one angled structure disposed radially outward of the central portion, each of the at least one angled structure having a top portion and an angled surface disposed at a downward angle in a radially outward direction from the top portion toward the outer perimeter, and a bottom surface of the body.

Abstract: Shutter disk assemblies for use in process chambers to protect a substrate support disposed below the shutter disk assembly from undesired material deposition are provided herein. In some embodiments, a shutter disk assembly for use in a process chamber to protect a substrate support disposed below the shutter disk assembly may include an upper disk member having a top surface and a bottom surface; and a lower carrier member having at least a portion of the lower carrier member disposed below a portion of the upper disk member to support the upper disk member and to create a protective overlap region that prevents exposure of the substrate support upon deformation of the upper disk member.

Abstract: Embodiments of the invention include methods for in-situ chamber dry clean for metal deposition chambers.

Abstract: A support component comprises a support structure having a support surface with one or more quartz contact tips. In one version, the support component comprises a robot blade capable of transferring a substrate into and out of a chamber. The robot blade comprises a plate having a plurality of raised mesas, each raised mesa comprising a quartz contact tip which minimizes contact with the substrate thereby generating fewer contaminant particles during substrate transportation. Other versions of the support component include a heat exchange pedestal, lift pin assembly, and lifting fin assembly.

Abstract: A transistor including a semiconductor substrate defined with an active region and a device isolation region, a gate formed on the semiconductor substrate, an insulating spacers formed on respective side walls of the gate, and source/drain junctions formed in the semiconductor substrate at opposite sides of the gate, the source/drain junctions having asymmetrical junction structures, respectively, wherein the gate has a lower portion arranged on the active region of the substrate, the lower gate portion having a stepped profile having a lower surface, an upper surface and a vertically-extending side surface. The invention also provides a method for manufacturing this transistor. In accordance with this transistor structure, an increase in the dopant concentration of a storage node is prevented. Accordingly, a reduction in the amount of leakage current is achieved, so that an improvement in the refresh characteristics of the transistor is achieved.

Abstract: Disclosed is a method for manufacturing a semiconductor device having recess channels and asymmetrical junctions. The method includes forming an impurity region for adjusting the threshold voltage by implanting ions into a bit line junction of a semiconductor substrate, which includes storage nodes junction, the bit line junction, and channel regions between the source and bit line junctions, and portions of the channel regions of the semiconductor substrate adjacent to the bit line junction; forming recess channel trenches by etching the channel regions of the semiconductor substrate to a designated depth; forming a gate stack on the semiconductor substrate provided with the recess channel trenches; and forming the storage nodes junction and the bit line junction on the semiconductor substrate provided with the gate stack via ion implantation.

Abstract: Disclosed are an asymmetric recessed gate MOSFET, and a method for manufacturing the same. The asymmetric recessed gate MOSFET comprises: recess regions formed at a predetermined depth in a semiconductor; recessed gate electrodes formed at a predetermined height on a semiconductor substrate by gap-filling the recess regions, and misaligned with the recess region corresponding to one of the source/drain regions; spacers formed on sides of the recessed gate electrodes; and source/drain regions implanted with a dopant formed in the semiconductor substrate exposed between the spacers. The overlap between the gate electrodes and the source/drain regions can be reduced by having one of the source/drain regions misaligned with the recess regions in the recessed gate structure, and abnormal leakage current caused by consistency between an electron field max point A and a stress max pint B can be sharply reduced by changing the profile of the source/drain regions.

Abstract: Disclosed herein are a recess-gate structure in which junctions have a thickness significantly smaller than the thickness of a device isolation layer to thereby prevent shorting of the junctions located at opposite lateral sides of the device isolation layer close thereto, resulting in an improvement in the operational reliability of a resultant device, and a method for forming the same. The recess-gate structure comprises a silicon substrate in which an active region and a device isolation region are defined, a plurality of gates formed on the substrate, gate spacers formed at the side wall of the respective gates, and junctions formed in the substrate at opposite lateral sides of the gates and defining an asymmetrical structure relative to each other. A gate recess is defined in the active region of the substrate to have a stepped profile consisting of a bottom plane, top plane, and vertical plane.

Abstract: A lifting assembly can lift a substrate from a substrate support and transport the substrate. The lift assembly has a hoop sized to fit about a periphery of the substrate support, and a pair of arcuate fins mounted on the hoop, each arcuate fin comprising a pair of opposing ends having ledges that extend radially inward, each ledge having a raised protrusion to lift a substrate so that the substrate contacts substantially only the raised protrusion, thereby minimizing contact with the ledge, when the pair of fins is used to lift the substrate off the substrate support. The lifting assembly and other process chamber components can have a diamond-like coating having interlinked networks of (i) carbon and hydrogen, and (ii) silicon and oxygen. The diamond-like coating has a contact surface having a coefficient of friction of less than about 0.3, a hardness of at least about 8 GPa, and a metal concentration level of less than about 5×1012 atoms/cm2 of metal.