Abstract: Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device includes a lower electrode on a substrate, a metal oxide on the lower electrode, a buffer on the metal oxide, an oxide channel in the buffer, a gate insulating layer in the oxide channel, a gate electrode in the gate insulating layer, and an upper electrode on the gate electrode, and the buffer may include a silicide material.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a lower electrode provided on a substrate, a buffer layer provided on the lower electrode and including first indium, an oxide semiconductor layer provided on the buffer layer and including second indium, a gate electrode provided apart from the oxide semiconductor layer, and an upper electrode provided on the oxide semiconductor layer, wherein a content of the first indium is greater than a content of the second indium.

Abstract: A semiconductor package includes: a connection structure having a first surface and a second, and including a redistribution layer; a passive component disposed on the first surface of the connection structure, and electrically connected to the redistribution layer; a semiconductor chip disposed on the first surface of the connection structure, and electrically connected to the redistribution layer; a first encapsulant disposed on the first surface of the connection structure and covering at least a portion of the semiconductor chip; a second encapsulant disposed on the first surface of the connection structure and covering at least a portion of the passive component; an antenna substrate disposed on the first encapsulant and including a wiring layer, at least a portion of the wiring layer including an antenna pattern; and a through via penetrating at least a portion of each of the connection structure, the first encapsulant, and the antenna substrate.

Abstract: Provided are a vertical transistor and a method of manufacturing the same. The vertical transistor includes a substrate, a lower electrode on the substrate and including a metal material, a carbon thin film being conductive and on the lower electrode, an oxide semiconductor layer on the carbon thin film, a gate electrode apart from the oxide semiconductor layer, a gate insulating layer arranged between the oxide semiconductor layer and the gate electrode, and an upper electrode on the oxide semiconductor layer, wherein the lower electrode. The carbon thin film, the oxide semiconductor layer, and the upper electrode are arranged in a direction perpendicular to the substrate.

Abstract: Disclosed are a terahertz band waveguide module and a mounting method of an IC chip. The terahertz band waveguide module includes: a waveguide having a channel having a first size based on an E-plane; and an IC chip having a width of a second size and disposed at a preset position inside the waveguide, wherein the IC chip is disposed inside the waveguide with an air gap on at least two surfaces of the IC chip.

Abstract: A semiconductor package includes: a connection structure having a first surface and a second, and including a redistribution layer; a passive component disposed on the first surface of the connection structure, and electrically connected to the redistribution layer; a semiconductor chip disposed on the first surface of the connection structure, and electrically connected to the redistribution layer; a first encapsulant disposed on the first surface of the connection structure and covering at least a portion of the semiconductor chip; a second encapsulant disposed on the first surface of the connection structure and covering at least a portion of the passive component; an antenna substrate disposed on the first encapsulant and including a wiring layer, at least a portion of the wiring layer including an antenna pattern; and a through via penetrating at least a portion of each of the connection structure, the first encapsulant, and the antenna substrate.

Abstract: A semiconductor package includes: a connection structure including one or more redistribution layers; a core structure disposed on a surface of the connection structure; a semiconductor chip disposed on the surface and including connection pads electrically connected to the redistribution layers of the connection structure; a first encapsulant disposed on the surface and covering at least a portion of each of the core structure and the semiconductor chip; an antenna substrate disposed on the first encapsulant and including one or more wiring layers, at least a portion of the wiring layers including an antenna pattern; and a through via penetrating at least a portion of each of the connection structure, the core structure, the first encapsulant, and the antenna substrate.

Abstract: A semiconductor package includes: a connection structure including one or more redistribution layers; a core structure disposed on a surface of the connection structure; a semiconductor chip disposed on the surface and including connection pads electrically connected to the redistribution layers of the connection structure; a first encapsulant disposed on the surface and covering at least a portion of each of the core structure and the semiconductor chip; an antenna substrate disposed on the first encapsulant and including one or more wiring layers, at least a portion of the wiring layers including an antenna pattern; and a through via penetrating at least a portion of each of the connection structure, the core structure, the first encapsulant, and the antenna substrate.

Abstract: An apparatus of an antenna is provided. The apparatus includes a first conductor plate disposed on an upper side of a single plate and comprising an aperture, a plurality of vias inserted to vertically penetrate through the single plate, a second conductor plate disposed on a lower side of the single plate, and a feed line for applying a signal to radiate to a dielectric resonator embedded as a cavity which is formed by the first conductor plate, the second conductor plate, and the vias. The aperture is in a size which produces multiple-resonance at an operating frequency.

Abstract: An apparatus of an antenna is provided. The apparatus includes a first conductor plate disposed on an upper side of a single plate and comprising an aperture, a plurality of vias inserted to vertically penetrate through the single plate, a second conductor plate disposed on a lower side of the single plate, and a feed line for applying a signal to radiate to a dielectric resonator embedded as a cavity which is formed by the first conductor plate, the second conductor plate, and the vias. The aperture is in a size which produces multiple-resonance at an operating frequency.

Abstract: There is provided a differential mode amplifier driving circuit, including: a first port having one end connected to a single signal; a second port having one end connected to a differential signal; a first transmission line having one end grounded; and a third port having one end connected to the first transmission line and the other end connected to the differential signal.

Abstract: Disclosed is a balun circuit using defected ground structure. The balun circuit using a defected ground structure includes: a substrate; a ground surface formed on one surface of the substrate, the ground surface being formed with defect structure in a previously set shape; and two transmission lines formed on the other surface of the substrate opposing the ground surface, and separated from each other, and the defect structure of the ground surface is configured to have open circuit impedance characteristics, and one of the two transmission lines is grounded. An even mode signal is removed by using the defect ground structure having the open circuit impedance characteristics, and termination of total reflection characteristics is performed by using the grounding of one of the transmission lines. Accordingly, a balun circuit can be obtained which is small in size, has little loss at high frequency, and shows little change in characteristics due to the process error.

Abstract: Embodiments of the invention provide a dielectric waveguide antenna including a dielectric waveguide transmitting a signal applied from a power feeder, a dielectric waveguide radiator radiating the signal transmitted from the dielectric waveguide to the air through a first aperture, and a matching unit formed in a portion of the dielectric waveguide and controlling a serial reactance and a parallel reactance to thereby perform impedance matching between the dielectric waveguide radiator and the air, in order to reduce reflection generated in the first aperture during the radiation of the signal through the first aperture. Reflection in the aperture is reduced through the matching unit having various structures, thereby making it possible to improve characteristics of the dielectric waveguide antenna.

Abstract: Disclosed is a balun circuit using defected ground structure. The balun circuit using a defected ground structure includes: a substrate; a ground surface formed on one surface of the substrate, the ground surface being formed with defect structure in a previously set shape; and two transmission lines formed on the other surface of the substrate opposing the ground surface, and separated from each other, and the defect structure of the ground surface is configured to have open circuit impedance characteristics, and one of the two transmission lines is grounded. An even mode signal is removed by using the defect ground structure having the open circuit impedance characteristics, and termination of total reflection characteristics is performed by using the grounding of one of the transmission lines. Accordingly, a balun circuit can be obtained which is small in size, has little loss at high frequency, and shows little change in characteristics due to the process error.

Abstract: Embodiments of the invention provide a dielectric waveguide antenna including a dielectric waveguide transmitting a signal applied from a power feeder, a dielectric waveguide radiator radiating the signal transmitted from the dielectric waveguide to the air through a first aperture, and a matching unit formed in a portion of the dielectric waveguide and controlling a serial reactance and a parallel reactance to thereby perform impedance matching between the dielectric waveguide radiator and the air, in order to reduce reflection generated in the first aperture during the radiation of the signal through the first aperture. Reflection in the aperture is reduced through the matching unit having various structures, thereby making it possible to improve characteristics of the dielectric waveguide antenna.

Abstract: A dielectric resonator antenna is disclosed that includes a multi-layer substrate on which a plurality of insulating layers and conductor layers are alternately stacked. The dielectric resonator antenna also includes a first conductor plate that has an opening part on the upper portion of the top insulating layer of the multi-layer substrate and a second conductor plate that is formed on the lower portion of the bottom insulating layer from the first conductor plate. The insulating layer is formed with at least two stacked layers and is disposed at a position corresponding to the opening part. The dielectric resonator antenna also includes a plurality of first metal via holes, a feeding part and a matching substrate that is stacked on the opening part and is stacked with at least one insulating layer.

Abstract: A dielectric resonator antenna embedded in a multilayer substrate is described. The dielectric resonator antenna includes a multilayer substrate, a first conductive plate, a second conductive plate, a plurality of first metal via holes, a feeding part configured to feed a dielectric resonator, and a conductive pattern part inserted into the dielectric resonator so that a vertical metal interface is formed in the dielectric resonator.

Abstract: Disclosed herein is a dielectric waveguide antenna including: a dielectric waveguide transmitting a signal applied from a power feeder; a dielectric waveguide radiator radiating the signal transmitted from the dielectric waveguide to the air through a first aperture; and a matching unit formed in a portion of the dielectric waveguide and controlling a serial reactance and a parallel reactance to thereby perform impedance matching between the dielectric waveguide radiator and the air, in order to reduce reflection generated in the first aperture during the radiation of the signal through the first aperture. Reflection in the aperture is reduced through the matching unit having various structures, thereby making it possible to improve characteristics of the dielectric waveguide antenna.

Abstract: Disclosed herein is a dielectric resonator array antenna including one or more series-feed type array elements installed to be arranged in parallel in a multilayer substrate, wherein first high frequency signals having the same or different phases or time delays are adjusted to be applied to the respective series-feed type array elements and respective radiated 1D array beams are individually used or combined to adjust beamforming of 2D array beams. Also, since the series-feed type array element is configured by connecting a plurality of dielectric resonator antennas in series, it can be easily and simply fed in series through coupling generated by the intervals between the feeding lines of the pertinent feeding unit of the plurality of dielectric resonator antennas connected in series. In addition, the broadband characteristics can be obtained by using the plurality of dielectric resonator antennas, whereby the overall antenna performance can be enhanced.

Abstract: There is provided a differential mode amplifier driving circuit, including: a first port having one end connected to a single signal; a second port having one end connected to a differential signal; a first transmission line having one end grounded; and a third port having one end connected to the first transmission line and the other end connected to the differential signal.