Abstract: An apparatus includes a beam scanner applying, during a non-uniform scanning mode, a plurality of different waveforms generating a scan of an ion beam along a scan direction, wherein a given waveform comprises a plurality of scan segments, wherein a first scan segment comprises a first scan rate and a second scan segment comprises a second scan rate different from the first scan rate; a current detector intercepting the ion beam outside of a substrate region and recording a measured integrated current of the ion beam for a given waveform; and a scan adjustment component coupled to the beam scanner and comprising logic to determine: when a beam width of the ion beam along the scan direction exceeds a threshold; and a plurality of current ratios based on the measured integrated current of the ion beam for at least two different waveforms of the plurality of waveforms.

Abstract: An electrostatic chuck with LED heating is disclosed. The electrostatic chuck with LED heating comprises a first subassembly, which comprises a LED heater, and a second subassembly, which comprises an electrostatic chuck. The LED substrate heater subassembly includes a base having a recessed portion. A plurality of light emitting diodes (LEDs) is disposed within the recessed portion. The LEDs may be GaN or GaP LEDs, which emit light at a wavelength which is readily absorbed by silicon, thus efficiently and quickly heating the substrate. The second subassembly, which comprises an electrostatic chuck, is disposed on the LED substrate heater subassembly. The electrostatic chuck includes a top dielectric layer and an interior layer that are transparent at the wavelength emitted by the LEDs. One or more electrodes are disposed between the top dielectric layer and the interior layer to create the electrostatic force.

Abstract: A system and method for heating a substrate while that substrate is being processed by an ion beam is disclosed. The system comprises two arrays of light emitting diodes (LEDs) disposed above and below the ion beam. The LEDs may be GaN or GaP LEDs, which emit light at a wavelength which is readily absorbed by silicon, thus efficiently and quickly heating the substrate. The LED arrays may be arranged so that the ion beam passes between the two LED arrays and strikes the substrate. As the substrate is translated relative to the ion beam, the LEDs from the LED arrays provide heating to the substrate.

Abstract: An electrostatic clamp having improved temperature uniformity is disclosed. The electrostatic clamp includes an LED array mounted along an annular ring so as to illuminate the outer edge of the workpiece. The LEDs in the LED array may emit light at a wavelength readily absorbed by the workpiece, such as between 0.4 ?m and 1.0 ?m. The center portion of the workpiece is heated using conductive heating provided by the heated electrostatic clamp. The outer portion of the workpiece is heated by light energy from the LED array. The LED array may be disposed on the base of the electrostatic clamp, or may be disposed on a separate ring. The diameter of the upper dielectric layer of the electrostatic clamp may be modified to accommodate the LED array.

Abstract: Methods for processing of a workpiece are disclosed. The actual rate at which different portions of an ion beam can process a workpiece, referred to as the processing rate profile, is determined by measuring the amount of material removed from, or added to, a workpiece by the ion beam as a function of ion beam position. An initial thickness profile of a workpiece to be processed is determined. Based on the initial thickness profile, a target thickness profile, and the processing rate profile of the ion beam, a first set of processing parameters are determined. The workpiece is then processed using this first set of processing parameters. In some embodiments, an updated thickness profile is determined after the first process and a second set of processing parameters are determined. A second process is performed using the second set of processing parameters. Optimizations to improve throughput are also disclosed.

Abstract: An electrostatic chuck with LED heating is disclosed. The electrostatic chuck with LED heating comprises a first subassembly, which comprises a LED heater, and a second subassembly, which comprises an electrostatic chuck. The LED substrate heater subassembly includes a base having a recessed portion. A plurality of light emitting diodes (LEDs) is disposed within the recessed portion. The LEDs may be GaN or GaP LEDs, which emit light at a wavelength which is readily absorbed by silicon, thus efficiently and quickly heating the substrate. The second subassembly, which comprises an electrostatic chuck, is disposed on the LED substrate heater subassembly. The electrostatic chuck includes a top dielectric layer and an interior layer that are transparent at the wavelength emitted by the LEDs. One or more electrodes are disposed between the top dielectric layer and the interior layer to create the electrostatic force.

Abstract: A system and method for heating a substrate while that substrate is being processed by an ion beam is disclosed. The system comprises two arrays of light emitting diodes (LEDs) disposed above and below the ion beam. The LEDs may be GaN or GaP LEDs, which emit light at a wavelength which is readily absorbed by silicon, thus efficiently and quickly heating the substrate. The LED arrays may be arranged so that the ion beam passes between the two LED arrays and strikes the substrate. As the substrate is translated relative to the ion beam, the LEDs from the LED arrays provide heating to the substrate.

Abstract: A system for heating substrates while being transported between the load lock and the platen is disclosed. The system comprises an array of light emitting diodes (LEDs) disposed above the alignment station. The LEDs may be GaN or GaP LEDs, which emit light at a wavelength which is readily absorbed by silicon, thus efficiently and quickly heating the substrate. The LEDs may be arranged so that the rotation of the substrate during alignment results in a uniform temperature profile of the substrate. Further, heating during alignment may also increase throughput and eliminate preheating stations that are currently associated with the processing chamber.

Abstract: An apparatus includes a beam scanner applying, during a non-uniform scanning mode, a plurality of different waveforms generating a scan of an ion beam along a scan direction, wherein a given waveform comprises a plurality of scan segments, wherein a first scan segment comprises a first scan rate and a second scan segment comprises a second scan rate different from the first scan rate; a current detector intercepting the ion beam outside of a substrate region and recording a measured integrated current of the ion beam for a given waveform; and a scan adjustment component coupled to the beam scanner and comprising logic to determine: when a beam width of the ion beam along the scan direction exceeds a threshold; and a plurality of current ratios based on the measured integrated current of the ion beam for at least two different waveforms of the plurality of waveforms.

Abstract: An electrostatic clamp having improved temperature uniformity is disclosed. The electrostatic clamp includes an LED array mounted along an annular ring so as to illuminate the outer edge of the workpiece. The LEDs in the LED array may emit light at a wavelength readily absorbed by the workpiece, such as between 0.4 ?m and 1.0 ?m. The center portion of the workpiece is heated using conductive heating provided by the heated electrostatic clamp. The outer portion of the workpiece is heated by light energy from the LED array. The LED array may be disposed on the base of the electrostatic clamp, or may be disposed on a separate ring. The diameter of the upper dielectric layer of the electrostatic clamp may be modified to accommodate the LED array.

Abstract: Methods for the selective processing of the outer portion of a workpiece are disclosed. The outer portion is processed by directing an ion beam toward the workpiece, where the ion beam extends beyond the outer edge of the workpiece at two locations. The workpiece is then rotated relative to the ion beam about the center so that all regions of the outer portion are exposed to the ion beam. The workpiece may be rotated an integral number of rotations. The ion beam may perform any process, such as ion implantation, etching or deposition. The outer portion may be an annular ring having an outer diameter equal to that of the workpiece and having a width of 1 to 30 millimeters. The rotation of the workpiece may be aligned with a notch on the outer edge of the workpiece.

Abstract: A system for heating substrates while being transported between processing chambers is disclosed. The system comprises an array of light emitting diodes (LEDs) disposed in the transfer chamber. The LEDs may be GaN LEDs, which emit light at a wavelength which is readily absorbed by silicon, thus efficiently and quickly heating the substrate. A controller is in communication with the LEDs. The LEDs may be independently controllable, so that the LEDs that are disposed above the substrate as it is moved from one processing chamber to another are illuminated. In other words, the illumination of the LEDs and the movements of the substrate handling robot may be synchronized by the controller.

Abstract: A system and method for processing a workpiece is disclosed. A plasma chamber is used to create a ribbon ion beam, extracted through an extraction aperture. A workpiece is translated proximate the extraction aperture so as to expose different portions of the workpiece to the ribbon ion beam. As the workpiece is being exposed to the ribbon ion beam, at least one parameter associated with the plasma chamber is varied. The variable parameters include extraction voltage duty cycle, workpiece scan velocity and the shape of the ion beam. In some embodiments, after the entire workpiece has been exposed to the ribbon ion beam, the workpiece is rotated and exposed to the ribbon ion beam again, while the parameters are varied. This sequence may be repeated a plurality of times.

Abstract: A system and method for dynamic heating of a workpiece during processing is disclosed. The system includes an ion source and a plurality of LEDs arranged in an array, which are directed at a portion of the surface of the workpiece. The LEDs are selected so that they emit light in a frequency range that is readily absorbed by the workpiece, thus heating the workpiece. In some embodiments, the LEDs heat a portion of the workpiece just before that portion is processed by an ion beam. In another embodiment, the LEDs heat a portion of the workpiece as it is being processed. The LEDs may be arranged in an array, which may have a width that is at least as wide as the width of the ion beam. The array also has a length, perpendicular to its width, having one or more rows of LEDs.

Abstract: A workpiece is implanted to affect growth of a compound semiconductor, such as GaN. Implanted regions of a workpiece increase, reduce, or prevent growth of this compound semiconductor. Combinations of implants may be performed to cause increased growth in certain regions of the workpiece, such as between regions where growth is reduced. Growth also may be reduced or prevented at the periphery of the workpiece.

Abstract: Oxygen, silicon, germanium, carbon, or nitrogen is selectively implanted into a workpiece. The workpiece is annealed to incorporate the ions into the workpiece. A compound semiconductor is then formed on the workpiece. For example, gallium nitride may be formed on a silicon, silicon carbide, or sapphire workpiece. The width of the implanted regions can be configured to compensate for any shrinkage during annealing.

Abstract: In one embodiment, a method of growing a heteroepitaxial layer comprises providing a patterned substrate containing patterned features having sidewalls. The method also includes directing ions toward the sidewalls in an exposure, wherein altered sidewall regions are formed, and depositing the heteroepitaxial layer under a set of deposition conditions effective to preferentially promote epitaxial growth on the sidewalls in comparison to other surfaces of the patterned features.

Abstract: A workpiece is implanted to improve growth of a compound semiconductor, such as GaN. This workpiece may be implanted such that the workpiece has a dose at a center different from a dose at a periphery. This workpiece also may be implanted one or more times to form a pattern of lines, which may be a grid, a series of circles, or other shapes. The distance between certain pairs of lines may be different across the workpiece.

Abstract: A workpiece is implanted to a first depth to form a first amorphized region. This amorphized region is then etched to the first depth. After etching, the workpiece is implanted to a second depth to form a second amorphized region below a location of the first amorphized region. The second amorphized region is then etched to the second depth. The implant and etch steps may be repeated until structure is formed to the desired depth. The workpiece may be, for example, a compound semiconductor, such as GaN, a magnetic material, silicon, or other materials.

Abstract: In one embodiment, a method of growing a heteroepitaxial layer comprises providing a patterned substrate containing patterned features having sidewalls. The method also includes directing ions toward the sidewalls in an exposure, wherein altered sidewall regions are formed, and depositing the heteroepitaxial layer under a set of deposition conditions effective to preferentially promote epitaxial growth on the sidewalls in comparison to other surfaces of the patterned features.