Abstract: A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.

Abstract: Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.

Abstract: Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.

Abstract: A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.

Abstract: A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.

Abstract: A system and method to form a stacked barrier layer for copper contacts formed on a substrate. The substrate is serially exposed to first and second reactive gases to form an adhesion layer. Then, the adhesion layer is serially exposed to third and fourth reactive gases to form a barrier layer adjacent to the adhesion layer. This is followed by deposition of a copper layer adjacent to the barrier layer.

Abstract: A method and apparatus to form a refractory metal layer on a substrate features nucleating a substrate using sequential deposition techniques in which the substrate is serially exposed to first and second reactive gases followed by forming a layer, employing vapor deposition, to subject the nucleation layer to a bulk deposition of a compound contained in one of the first and second reactive gases.

Abstract: A substrate processing system having a transfer chamber having two processing chambers and two load lock chambers coupled thereto is generally provided. The transfer chamber includes a body having a first transfer area and a second transfer area defined therein on either side of a center axis. A first passage couples one of the load locks with the first transfer area and a second passage couples the other one of the load locks with the second transfer area. The first passage and the second passage form an acute angle about the center axis. A transfer platform is disposed between the first transfer area and the second transfer area. A first transfer robot and a second transfer robot are disposed in the first and second transfer areas, respectively. Each robot is adapted to transfer substrates between the load locks, the transfer platform and a processing chamber.

Abstract: Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.

Abstract: Methods of depositing titanium nitride (TiN) films on a substrate are disclosed. The titanium nitride (TiN) films may be formed using a cyclical deposition process by alternately adsorbing a titanium-containing precursor and a NH3 gas on the substrate. The titanium-containing precursor and the NH3 gas react to form the titanium nitride (TiN) layer on the substrate. The titanium nitride (TiN) films are compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, an interconnect structure is fabricated. The titanium nitride films may also be used as an electrode of a three-dimensional capacitor structure such as for example, trench capacitors and crown capacitors.

Abstract: A substrate processing system having a transfer chamber having two processing chambers and two load lock chambers coupled thereto is generally provided. The transfer chamber includes a body having a first transfer area and a second transfer area defined therein on either side of a center axis. A first passage couples one of the load locks with the first transfer area and a second passage couples the other one of the load locks with the second transfer area. The first passage and the second passage form an acute angle about the center axis. A transfer platform is disposed between the first transfer area and the second transfer area. A first transfer robot and a second transfer robot are disposed in the first and second transfer areas, respectively. Each robot is adapted to transfer substrates between the load locks, the transfer platform and a processing chamber.

Abstract: A method and system to form a refractory metal layer on a substrate features a bifurcated deposition process that includes nucleating a substrate using ALD techniques to serially expose the substrate to first and second reactive gases followed forming a bulk layer, adjacent to the nucleating layer, using CVD techniques to concurrently exposing the nucleation layer to the first and second gases.

Abstract: A method and apparatus for forming a metal interconnect is provided. A tungsten plug is first deposited by selective WCVD within a feature having an aspect ratio of 3:1 or greater to at least partially fill the feature. An IMP barrier layer is next deposited over the tungsten plug. A PVD copper seed layer followed by an ECP copper layer is then deposited over the barrier layer to fill the feature. The tungsten plug has a thickness of about 1,000 to about 5,000 angstroms and fills less than about 50% of the volume of the feature.

Abstract: Refractory metal nitride layers for integrated circuit fabrication are described. The refractory metal nitride layer may be formed by sequentially chemisorbing alternating monolayers of a nitrogen-containing compound and a refractory metal compound onto a substrate. A composite refractory metal nitride layer is also described. The composite refractory metal nitride layer may be formed by sequentially chemisorbing monolayers of a nitrogen-containing compound and two or more refractory metal compounds onto a substrate.

Abstract: A system and method to form a stacked barrier layer for copper contacts formed on a substrate. The substrate is serially exposed to first and second reactive gases to form an adhesion layer. Then, the adhesion layer is serially exposed to third and fourth reactive gases to form a barrier layer adjacent to the adhesion layer. This is followed by deposition of a copper layer adjacent to the barrier layer.

Abstract: An apparatus and process for limiting residue remaining after the etching of metal in a semiconductor manufacturing process, such as etching back a tungsten layer to form tungsten plugs, by passivating the surface of a wafer with a halogen-containing gas are disclosed. The wafer is exposed to the halogen-containing gas in a chamber before a metal layer is deposited on the wafer. The exposure can occur in the same chamber as the metal deposition, or a different chamber. The wafer can remain in the chamber or be moved to another chamber for etching after exposure and deposition.

Abstract: An apparatus and process for limiting residue remaining after the etching of metal in a semiconductor manufacturing process, such as etching back a tungsten layer to form tungsten plugs, by passivating the surface of a wafer with a halogen-containing gas are disclosed. The wafer is exposed to the halogen-containing gas in a chamber before a metal layer is deposited on the wafer. The exposure can occur in the same chamber as the metal deposition, or a different chamber. The wafer can remain in the chamber or be moved to another chamber for etching after exposure and deposition.

Abstract: The present invention discloses susceptor used in vacuum CVD chambers which provides a purge gas delivery and removal system that inhibits the deposition of process gas on the edge and back side of a substrate, while providing access to the entire surface of the substrate for processing. The susceptor has a substrate receiving surface having a perimeter. A purge gas such as argon is passed over the perimeter of the surface using a purge gas system having an inlet disposed adjacent to the substrate receiving surface. The purge gas is removed by a pump system having an outlet disposed adjacent to the substrate receiving surface.

Abstract: An apparatus and process for limiting residue remaining after the etching of metal in a semiconductor manufacturing process by injecting a halogen-containing gas without a plasma into a processing chamber. The wafer is then exposed to the remnants of the halogen-containing gas in the chamber before the metal is deposited on the wafer. The exposure can occur in the same chamber as the metal deposition, or a different chamber. The wafer can remain in the chamber or be moved to another chamber for etching after exposure and deposition.