Abstract: A master-slave flip-flop may be operable to sense a signal, received by a slave circuit from a master circuit, at a pair of serially coupled NMOS transistors and/or at a pair of serially coupled PMOS transistors in the slave circuit. The flip-flop may generate a corresponding output signal at an output terminal based on the sensing of the signal received by the slave circuit. The flip-flop may receive, in a feedback path of the slave circuit, a SET signal. An inverted version of the SET signal may be received via a gate terminal of a PMOS transistor in the master circuit. The flip-flop may receive, in a feedback path of the master circuit, a RESET signal. The RESET signal may also be received via a gate of a NMOS transistor in the master circuit. The flip-flop may disable an input terminal utilizing the SET signal and/or the RESET signal.

Abstract: In one embodiment, NMOS transistors have their source coupled to a common source node such that the NMOS transistors conduct a leakage current if the common source node is grounded. To reduce this leakage current, the common source node is raised in potential. Similarly, PMOS transistors have their source coupled to a common source node such that the PMOS transistors conduct a leakage current if the common source node is charged to a power supply voltage VDD. To reduce this leakage current, the common source node is lowered in potential.

Abstract: In one embodiment, NMOS transistors have their source coupled to a common source node such that the NMOS transistors conduct a leakage current if the common source node is grounded. To reduce this leakage current, the common source node is raised in potential. Similarly, PMOS transistors have their source coupled to a common source node such that the PMOS transistors conduct a leakage current if the common source node is charged to a power supply voltage VDD. To reduce this leakage current, the common source node is lowered in potential.

Abstract: In one embodiment, a CAM is provided that includes; a plurality of memory cells grouped to store a word, wherein the memory cells are organized into a plurality of ripple groups, each ripple group including a complex logic gate configured to determine whether a stored content for the ripple group's memory cells matches a corresponding portion of a comparand word if an enable input for the ripple group is asserted, each complex logic gate asserting an output if the determination indicates a match, the ripple groups being arranged from a first ripple group to a last ripple group such that the output from the first ripple group's complex logic gate functions as the enable input for a second ripple group's complex logic gate and so on such that an output from a next-to-last ripple group's complex logic gate functions as the enable input for the last ripple group's complex logic gate.

Abstract: In one embodiment, a sense amplifier includes: a differential amplifier adapted to amplify a voltage difference between a pair of bit lines; and a self-bias generation circuit adapted to reduce an offset bias in the differential amplifier with regard to the amplification of the voltage difference between the pair of bit lines.

Abstract: In one embodiment, NMOS transistors have their source coupled to a common source node such that the NMOS transistors conduct a leakage current if the common source node is grounded. To reduce this leakage current, the common source node is raised in potential. Similarly, PMOS transistors have their source coupled to a common source node such that the PMOS transistors conduct a leakage current if the common source node is charged to a power supply voltage VDD. To reduce this leakage current, the common source node is lowered in potential.

Abstract: In one embodiment, a die arrangement is disclosed in which a wire-bond pad may be operatively coupled to a power supply via a wire bond. A first pad may be operatively coupled to the wire-bond pad. A second pad may be operatively coupled to the first pad via a redistribution layer.

Abstract: A hierarchical memory structure having memory cells, and sense amplifiers and decoders coupled with the memory cells to form first tier memory module, and subsequent tiers being formed by having (n-1)-tier memory modules, which are coupled with (n)-tier sense amplifiers and (n)-tier decoders. Also provided are a single-ended sense amplifier having sample-and-hold reference, and a charge-share limited-swing-driver sense amplifier; an asynchronously-resettable decoder; a wordline decoder having row redundancy; a redundancy device having redundant memory cells operated by a redundancy controller; a diffusion replica delay circuit; a high-precision delay measurement circuit; and a data transfer bus circuit imposing a limited voltage swing on a data bus. Methods are provided for a write-after-read operation without an interposed precharge cycle, and write-after-write operation with an interposed precharge cycle are provided, either operation being completed in less than one memory access cycle.

Abstract: A decoder providing asynchronous reset, redundancy, or both. an asynchronously-resettable decoder with redundancy. The decoder has a synchronous portion, responsive to a clocked signal; an asynchronous portion coupled with an asynchronous circuit; a feedback-resetting portion, which substantially isolates the synchronous portion from the asynchronous portion coupled with, and interposed between the synchronous portion in response to a asynchronous reset signal; a signal input; a first memory output coupled with a first memory cell group; a second memory output coupled with a second memory cell group; and a selector coupled between the signal input, the first memory output, and the second memory output. This decoder can be memory row-oriented, and thus provide an asynchronously-resettable row decoder with row redundancy, or an asynchronously-resettable column decoder with column redundancy.

Abstract: An oscillator having multi-phase complementary outputs comprises a first plurality of single ended amplifiers connected in series to form an input and an output and a second plurality of single ended amplifiers connected in series to form an input and an output. The first and second plurality have the same odd number of amplifiers, A first feedback path connects the output to the input of the first plurality of amplifiers to establish oscillations in the first plurality of amplifiers at a frequency dependent upon the delay time from the input to the output of the first plurality. A second feedback path connects the output to the input of the second plurality of amplifiers to establish oscillations in the second plurality of amplifiers at a frequency dependent upon the delay time from the input to the output of the second plurality.

Abstract: A content addressable memory cell (10) includes a circuit (20) operating from a predetermined supply voltage (VDD) for storing a first bit of data at a first point (35) and a second bit of complementary data at a second point (36). A first transistor (40) comprising a first gate (42) is switchable to first and second states in response to predetermined relationships between the first and second bits and third and fourth test bits transmitted on first and second lines (14 and 16). Second and third transistors (50, 60) comprise gates (52, 62) coupled to the first line (14) and second line (16) and comprise circuit paths (54, 56, 64, 66) coupling the first and second points to the first gate.

Abstract: A digital memory system (30) includes a memory cell (52), a bit line (50), a transfer gate (60) a reference voltage generator (40), a sense amplifier (70) and a control circuit (80). The control circuit precharges the bit line to a bit line precharge voltage, which is sampled and stored. A corresponding reference voltage is generated after the bit line is isolated. The bit line and reference voltage are coupled to the sense amplifier so that a voltage is received based on charge stored in the memory cell. The sense amplifier then is isolated from the bit line and reference voltage and the sense amplifier is energized so that an output voltage is derived from the charge and reference voltage.

Abstract: A content addressable memory cell (10) comprises a word line 12, a first bit line (14), and a second bit line (16). A pair of transistors (30-31) is arranged to store bits of data at first and second points (35 and 36). A first transistor (26) is coupled to the word line, the first bit line and the first point. A second transistor (27) is coupled to the word line, the second bit line and the second point. The word line voltage is changed in accordance with process parameters to allow conduction by the first and second transistors to compensate for leakage by the pair of transistors. For example, the first and second transistors may be operated in a triode mode.

Abstract: A non-volatile memory cell (10) includes a charge-storing node (16). An electrically insulating first layer (76) is coupled between the node and a source of a first voltage (22). An electrically insulating second layer (66) is coupled between the node and a source of a second voltage (20-21). The area of the first layer is smaller than the area of the second layer. A controller (90) is arranged to cause the first voltage to be greater than the second voltage so that charge is extracted from the node and is arranged to cause the second voltage to be greater than the first voltage so that charge is injected into the node.

Abstract: A sense amplifier adapted to sense an input signal on global bitlines, having an amplifier offset cancellation network and an offset equalization network. The amplifier offset cancellation network mitigates an inherent offset signal value, a dynamic offset signal value, or both, yet produces a residual offset signal value, which is substantially eliminated by the offset equalization network. The sense amplifier also can include an isolation circuit to isolate the sense amplifier from the corresponding global bitlines when the sense amplifier is unused. Also, a charge-sharing circuit is used to share charge between the bitlines when the sense amplifier is activated, thus producing a limited voltage swing on the bit lines. The sense amplifier uses an amplifier offset cancellation network having multiple precharge-and-balance transistors, and an offset equalization network having at least one balancing transistor.

Abstract: A static latch can be converted to a dynamic latch by closing a pair of switches. When the switches are open, a first pair of back-to-back transistors serves as the static latch. When the switches are closed, a second pair of back-to-back transistors is connected to the first pair so the two pairs acting together serve as a dynamic latch.

Abstract: An integrated CMOS image sensor comprising pixel rows integrated on a substrate, each pixel row having pixel circuits, each pixel circuit providing a voltage signal in response to absorbed photons; and an opaque layer deposited above the pixel rows to define a set of dark pixels for each pixel row. For each pixel row, dark voltage signals indicative of the voltage signals provided by the set of dark pixels are stored and used to dark correct the voltage signals from the other pixels. The image sensor also comprises voltage-to-current converters for converting the voltage signals to currents for all pixel columns for each frame and followers to reduce the voltage swings on the outputs of the voltage-to-current converters. The currents are multiplexed in serial fashion to a current-to-voltage converter. The output of the current-to-voltage converter provides the dark voltage signals.

Abstract: A method is disclosed for reducing an offset for an image sensor. According to an embodiment of the invention, an offset for the image sensor is determined. A level of a reset voltage for the image sensor is adjusted based at least in part on the offset. The offset is reduced by applying the reset voltage to the image sensor.

Abstract: A read out circuit for an active pixel sensor array is provided. The read out circuit includes an amplifier that has a first and second input devices and an output port. The first input device is included in a pixel of an active pixel sensor array to receive an input signal indicative of an intensity of light detected by the pixel. The amplifier generates at an output thereof an output signal proportional to the input signal.

Abstract: A method is disclosed for reducing an offset for an image sensor. According to an embodiment of the invention, an offset for the image sensor is determined. A level of a reset voltage for the image sensor is adjusted based at least in part on the offset. The offset is reduced by applying the reset voltage to the image sensor.