Abstract: Variations in charged-particle-beam (CPB) source location are determined by scanning an alignment aperture that is fixed with respect to a beam defining aperture in a CPB, particularly at edges of a defocused CPB illumination disk. The alignment aperture is operable to transmit a CPB portion to a secondary emission surface that produces secondary emission directed to a scintillator element. Scintillation light produced in response is directed out of a vacuum enclosure associated with the CPB via a light guide to an external photodetection system.

Abstract: Methods and systems for imaging a sample with a charged particle microscope comprises after scanning a region of interest (ROI) of a sample with an electron beam and acquiring X-rays emitted from the sample, scanning the ROI with an ion beam and acquiring ion-induced photons emitted from the sample. A spatial distribution of multiple elements in the sample may be determined based on both the acquired X-rays and the acquired ion-induced photons.

Abstract: Variations in charged-particle-beam (CPB) source location are determined by scanning an alignment aperture that is fixed with respect to a beam defining aperture in a CPB, particularly at edges of a defocused CPB illumination disk. The alignment aperture is operable to transmit a CPB portion to a secondary emission surface that produces secondary emission directed to a scintillator element. Scintillation light produced in response is directed out of a vacuum enclosure associated with the CPB via a light guide to an external photodetection system.

Abstract: Methods and systems for imaging a sample with a charged particle microscope comprises after scanning a region of interest (ROI) of a sample with an electron beam and acquiring X-rays emitted from the sample, scanning the ROI with an ion beam and acquiring ion-induced photons emitted from the sample. A spatial distribution of multiple elements in the sample may be determined based on both the acquired X-rays and the acquired ion-induced photons.

Abstract: A focused ion beam (FIB) is used to mill beam spots into a substrate at a variety of ion beam column settings to form a set of training images that are used to train a convolutional neural network. After the neural network is trained, an ion beam can be adjusted by obtaining spot image which is processed with the neural network. The neural network can provide a magnitude and direction of defocus, aperture position, lens adjustments, or other ion beam or ion beam column settings. In some cases, adjustments are not made by the neural network, but serve to indicate that the ion beam and associated ion column continue to operate stably, and additional adjustment is not required.

Abstract: Disclosed herein are example embodiments for performing microscopy using microscope systems that combine both scanning-electron-microscope-cathodoluminescence (SEM-CL) microscopy and focused-ion-beam ion-induced optical emission (FIB-IOE) microscopy. Certain embodiments comprise operating a microscopy system in a first microscopy mode in which an electron beam interacts with a sample at a sample location and causes first-mode photons and electrons to be emitted, the first-mode photons including photons generated through a cathodoluminescence process; and operating a microscopy system in a second microscopy mode in which an ion beam interacts with a sample at the sample location and causes second-mode photons to be emitted, the second-mode photons including photons generated through an ion-induced luminescence process and photons generated through an atomic de-excitation process.

Abstract: A focused ion beam (FIB) is used to mill beam spots into a substrate at a variety of ion beam column settings to form a set of training images that are used to train a convolutional neural network. After the neural network is trained, an ion beam can be adjusted by obtaining spot image which is processed with the neural network. The neural network can provide a magnitude and direction of defocus, aperture position, lens adjustments, or other ion beam or ion beam column settings. In some cases, adjustments are not made by the neural network, but serve to indicate that the ion beam and associated ion column continue to operate stably, and additional adjustment is not required.

Abstract: Apparatus include a reflector positioned adjacent to a sample location that is situated to receive a charged particle beam (CPB) along a CPB axis from a CPB focusing assembly so that the reflector is situated to receive light emitted from a sample at the sample location based on a CPB-sample interaction or a photon-sample interaction and to direct the light to a photodetector, and a steering electrode situated adjacent to the reflector so as to direct secondary charged particles emitted from the sample based on the CPB-sample interaction away from the reflector and CPB axis. Methods and systems are also disclosed.

Abstract: Disclosed herein are example embodiments for performing microscopy using microscope systems that combine both scanning-electron-microscope-cathodoluminescence (SEM-CL) microscopy and focused-ion-beam ion-induced optical emission (FIB-IOE) microscopy. Certain embodiments comprise operating a microscopy system in a first microscopy mode in which an electron beam interacts with a sample at a sample location and causes first-mode photons and electrons to be emitted, the first-mode photons including photons generated through a cathodoluminescence process; and operating a microscopy system in a second microscopy mode in which an ion beam interacts with a sample at the sample location and causes second-mode photons to be emitted, the second-mode photons including photons generated through an ion-induced luminescence process and photons generated through an atomic de-excitation process.

Abstract: Apparatus include a reflector positioned adjacent to a sample location that is situated to receive a charged particle beam (CPB) along a CPB axis from a CPB focusing assembly so that the reflector is situated to receive light emitted from a sample at the sample location based on a CPB-sample interaction or a photon-sample interaction and to direct the light to a photodetector, and a steering electrode situated adjacent to the reflector so as to direct secondary charged particles emitted from the sample based on the CPB-sample interaction away from the reflector and CPB axis. Methods and systems are also disclosed.

Abstract: A charged-particle microscope having a vacuum chamber comprises a specimen holder, a particle-optical column, a detector and an exchangeable column extending element. The specimen holder is for holding a specimen. The particle-optical column is for producing and directing a beam of charged particles along an axis so as to irradiate the specimen. The column has a terminal pole piece at an extremity facing the specimen holder. The detector is for detecting a flux of radiation emanating from the specimen in response to irradiation by the beam. The exchangeable column extending element is magnetically mounted on the pole piece in a space between the pole piece and the specimen holder. Methods of using the microscope are also disclosed.

Abstract: Applicants have found that energetic neutral particles created by a charged exchange interaction between high energy ions and neutral gas molecules reach the sample in a ion beam system using a plasma source. The energetic neutral create secondary electrons away from the beam impact point. Methods to solve the problem include differentially pumped chambers below the plasma source to reduce the opportunity for the ions to interact with gas.

Abstract: The present invention provides a method for optimizing a shaped working beam having a sharp edge for making sufficiently precise cuts and a high beam current for faster processing. An ion beam is directed along an optical column through a reference aperture to form a reference beam that has a preferred shape and an associated reference current. The reference beam is optimized using selected parameters of the optical components within the optical column. The ion beam is then directed through a working aperture to form a working beam for use in a processing application. The working beam has a different shape from the reference beam and an associated working current that is higher than the reference current. The reference aperture and working aperture have at least one corresponding dimension. The working beam is then optimized using the selected optical component parameters used to align and focus the reference beam.

Abstract: The present invention provides a method for optimizing a shaped working beam having a sharp edge for making sufficiently precise cuts and a high beam current for faster processing. An ion beam is directed along an optical column through a reference aperture to form a reference beam that has a preferred shape and an associated reference current. The reference beam is optimized using selected parameters of the optical components within the optical column. The ion beam is then directed through a working aperture to form a working beam for use in a processing application. The working beam has a different shape from the reference beam and an associated working current that is higher than the reference current. The reference aperture and working aperture have at least one corresponding dimension. The working beam is then optimized using the selected optical component parameters used to align and focus the reference beam.

Abstract: The invention provides a charged particle beam system wherein the middle section of the focused ion beam column is biased to a high negative voltage allowing the beam to move at higher potential than the final beam energy inside that section of the column. At low kV potential, the aberrations and coulomb interactions are reduced, which results in significant improvements in spot size.

Abstract: Applicants have found that energetic neutral particles created by a charged exchange interaction between high energy ions and neutral gas molecules reach the sample in a ion beam system using a plasma source. The energetic neutral create secondary electrons away from the beam impact point. Methods to solve the problem include differentially pumped chambers below the plasma source to reduce the opportunity for the ions to interact with gas.

Abstract: The invention provides a charged particle beam system wherein the middle section of the focused ion beam column is biased to a high negative voltage allowing the beam to move at higher potential than the final beam energy inside that section of the column. At low kV potential, the aberrations and coulomb interactions are reduced, which results in significant improvements in spot size.

Abstract: Applicants have found that energetic neutral particles created by a charged exchange interaction between high energy ions and neutral gas molecules reach the sample in a ion beam system using a plasma source. The energetic neutral create secondary electrons away from the beam impact point. Methods to solve the problem include differentially pumped chambers below the plasma source to reduce the opportunity for the ions to interact with gas.

Abstract: The invention provides a charged particle beam system wherein the middle section of the focused ion beam column is biased to a high negative voltage allowing the beam to move at higher potential than the final beam energy inside that section of the column. At low kV potential, the aberrations and coulomb interactions are reduced, which results in significant improvements in spot size.

Abstract: The invention provides a charged particle beam system wherein the middle section of the focused ion beam column is biased to a high negative voltage allowing the beam to move at higher potential than the final beam energy inside that section of the column. At low kV potential, the aberrations and coulomb interactions are reduced, which results in significant improvements in spot size.