Abstract: Provided are a composition for forming porous film which can form a porous film having practical mechanical strength in a simple and low cost process; a porous film and a method for forming the film; and an inexpensive, high-performing and highly reliable semiconductor device comprising the porous film inside.

Abstract: Provided are a composition for forming film which can form porous film excelling in dielectric constant, adhesiveness, uniformity of the film, mechanical strength and having low hygroscopicity; porous film and a method for forming the film; and a high-performing and highly reliable semiconductor device comprising the porous film inside.

Abstract: Provided are a coating liquid for forming porous film which can produce desirably controlled thickness of the film and which excels in stability, and a semiconductor device comprising the porous film inside.

Abstract: Provided are a film formation composition which can produce a film having high strength and low dielectric constant, a method for manufacturing the same, a method for forming a porous film, a porous film, and a semiconductor device containing the porous film internally.

Abstract: There is disclosed an anti-reflection film material used in lithography containing at least a polymer compound having repeating units for copolymerization represented by the following general formula (1), or those containing a polymer compound having repeating units for copolymerization represented by the following general formula (2) and a polymer compound having repeating units for copolymerization represented by the following general formula (3). There can be provided an anti-reflection film material which has an excellent reflection preventive effect to exposure at short wavelength, and has high etch selectivity, namely, an etch rate is higher enough than the photoresist film, an etch rate is sufficiently slower than a substrate to be processed, wherein the shape of the resist pattern formed in the photoresist film on the anti-reflection film can be made perpendicular.

Abstract: According to the invention, the thin film having the thickness controlled desirably can be easily formed using common semiconductor processes. Provided is a coating liquid for forming the porous film having an excellent dielectric property and mechanical property. Specifically, the coating liquid for forming a porous film comprises the condensation product obtained by condensation of one or more silicate compounds represented by the formula (X2O) i(SiO2)j(H2O)k and one more organosilate compounds represented by the formula (X2O)a(RSiO1.5)b(H2O)c. Thus, the porous insulating film having sufficient mechanical strength and dielectric properties for use in the semiconductor manufacturing process can be manufactured.

Abstract: A composition comprising (A) a silanol group-bearing silicone resin comprising 30-100 mol % of T units: R1—SiZ3 and among the entire T units, 30-80 mol % of T-2 units containing only one silanol group: R1—Si(OH)Z′2 wherein R1 is a monovalent hydrocarbon group, Z is OH, hydrolyzable group or siloxane residue, at least one Z being a siloxane residue, and Z′ is a siloxane residue, and having a number average molecular weight of at least 100, and (B) a polymer resulting from an acrylate and/or methacrylate monomer is applied to a substrate and heated above the decomposition temperature of polymer (B) to form a porous film. The porous film is flat and uniform despite porosity, and has a low permittivity and high mechanical strength. It is best suited as an interlayer insulating layer when used in semiconductor device fabrication.

Abstract: A composition comprising (A) a silanol group-bearing silicone resin comprising 30-100 mol % of T units: R1—SiZ3 and among the entire T units, 30-80 mol % of T-2 units containing only one silanol group: R1—Si(OH)Z′2 wherein R1 is a monovalent hydrocarbon group, Z is OH, hydrolyzable group or siloxane residue, at least one Z being a siloxane residue, and Z′ is a siloxane residue, and having a number average molecular weight of at least 100, and (B) a polymer resulting from an acrylate and/or methacrylate monomer is applied to a substrate and heated above the decomposition temperature of polymer (B) to form a porous film. The porous film is flat and uniform despite porosity, and has a low permittivity and high mechanical strength. It is best suited as an interlayer insulating layer when used in semiconductor device fabrication.

Abstract: An organopolysiloxane composition comprising (A) 80-95 parts by weight of a silicone resin comprising units of R3SiO1/2 and SiO4/2 in a molar ratio of from 0.6/1 to 1.1/1, wherein R typically represents methyl, (B) 5-20 parts by weight of a diorganopolysiloxane, and (C) from more than 40 to 500 parts by weight of an organic solvent is applied to various substrates and fired into a ceramic film having improved heat resistance and adhesion.

Abstract: A process for preparing hexamethylcyclo-trisilazane by heating octamethylcyclotetra-silazane in the presence of a catalyst such as a Lewis acid or a sulfur compound of the following formula ##STR1## wherein M represents Ca, Mg, Al, Fe or NH.sub.4, R represents OH, a phenyl group or a substituted phenyl group, x is 0, 1 or 2 and y is 0, 1, 2 or 3 provided that x and y are not zero at the same time, and z is 0, 1, 2 or 3.

Abstract: An N-tert-butyldialkylsilylmaleimide represented by the following general formula: ##STR1## wherein R's represent C.sub.1 to C.sub.5 alkyl groups which may be the same or different and a method of producing the compound. Said N-tert-butyldialkylsilylmaleimide is useful as a silylating agent, which does not produce hydrogen chloride or the like as a by-product and therefore does not require to use a neutralizing agent additionally. Further this compound is useful as a compound which provides a maleimido group.

Abstract: Thexyl (C.sub.1 -C.sub.4) alkyl dialkoxy silanes are proposed as a class of novel organosilicon compounds such as thexyl methyl dimethoxy silane and thexyl n-butyl dimethoxy silane. These silane compounds can be synthesized by several different routes. For example, thexyl methyl dimethoxy silane is prepared starting from methyl phenyl chlorosilane which is subjected to the hydrosilation reaction with 2,3-dimethyl-2-butene to introduce a thexyl group and the compound is converted by the reaction with hydrogen chloride into thexyl methyl dichlorosilane which is methoxylated by the reaction with methyl alcohol.

Abstract: Several thexyl trialkoxy silanes as a novel class of organosilicon compounds were synthesized by the reaction of dehydrochlorination condensation between thexyl trichlorosilane and an alcohol, e.g., methyl, ethyl, isopropyl and isobutyl alcohols, and characterized by the analytical data. These compounds are useful as an intermediate in the synthetic preparation of other organosilicon compounds, starting material of various silicones, surface-treatment agent of inorganic materials and additive in complex catalysts.

Abstract: Cyclopentyl trichlorosilane can be efficiently prepared by the hydrosiliaton reaction of trichlorosilane and cyclopentene which can proceed only to a very low extent by the use of conventional platinum catalysts effective in other hydrosilation reactions. Thus, an equimolar mixture of the reactants is heated in the presence of a chlorine-deficient chloroplatinic acid catalyst of a specified chlorine:platinum atomic ratio at a temperature higher than the boiling point of the mixture under normal pressure in a pressurizable vessel so that the desired product can be obtained in a yield of 90% of the theoretical value or higher.