Abstract: According to an aspect of the present invention, it is possible to visually show both of information which is originally visually recognizable and information which is originally not seen that have been provided from equipment on the same image, so that it is possible to grasp the content of information and the source of providing the information corresponding to or in association with each other. Furthermore, it is possible to view information difficult to visually recognize together with visually recognizable information, and it is possible to clearly grasp, in addition to information which can be visually obtained at the place where a user currently stays, information related to the visually obtained information, from an image visually indicating the association.

Abstract: An imaging device includes a solid state imaging element that includes a plurality of pixels; and a driving unit; wherein each pixel includes: a photoelectric converting element includes a pair of electrodes stacked above a semiconductor substrate and a photoelectric converting layer arranged between the electrodes; a connecting portion that is arranged in the semiconductor substrate; a potential barrier portion; a first charge accumulating portion; and a signal output circuit, and wherein the driving unit drives the solid state imaging element so that the connecting portion and the potential barrier portion are set to a same potential by injecting charges into the connecting portion.

Abstract: The present invention relates to a technology which acquires information specific to a device by an image pickup element and remotely controls a desired device based on the acquired device-specific information. Particularly, the present invention relates to a technology which displays information for performing detailed remote control easily. In the present invention, it is intended to display information about manipulation of a desired device as needed and to facilitate remote manipulation of the device. As a result, according to an aspect of the present invention, since detailed information of a desired device can be selected to be viewed, detailed information of each of multiple devices can be easily identified by a single controller as needed.

Abstract: An image pickup apparatus includes: a solid-state image sensing device that includes a plurality of pixels, each of the pixels including: a photoelectric conversion film; and a photoelectric conversion element that is formed in the semiconductor substrate below the photoelectric conversion film, are made up of at least three types of photoelectric conversion elements for detecting light in different wave ranges, of visible light, and absorbs light in a wave range different from the wave ranges detected in the at least three types of photoelectric conversion elements and generates a charge responsive to the absorbed light, the image pickup apparatus further including: a monochrome image data generation unit; a color image data generation unit; and a record image data generation unit.

Abstract: A lower electrode, a photoelectric conversion layer, and an upper electrode are stacked in order above a semiconductor substrate, and a charge storage section that stores charge generated in the photoelectric conversion layer is connected to the lower electrode. The charge stored in the charge storage section is swept away by a charge sweeping away section for a given time from the endpoint of exposure. The given time is a time taken until the residual image charge existing in the photoelectric conversion layer at the exposure end point time is sufficiently discharged to the outside of the photoelectric conversion layer in a state in which the same bias as that at the exposure start time point is applied to the photoelectric conversion layer.

Abstract: An imaging device includes a solid state imaging element that includes a plurality of pixels; and a driving unit; wherein each pixel includes: a photoelectric converting element includes a pair of electrodes stacked above a semiconductor substrate and a photoelectric converting layer arranged between the electrodes; a connecting portion that is arranged in the semiconductor substrate; a potential barrier portion; a first charge accumulating portion; and a signal output circuit, and wherein the driving unit executes such a same potential driving that the connecting portion and the potential barrier portion are set to have a same potential by varying the potential of the potential barrier portion.

Abstract: The present invention relates to a technique for acquiring information specific to a device via an imaging element and performing remote-control of a desired device based on the acquired information specific to the device, and an object thereof is to suspend information display of certain devices in order to suppress disorderliness of a screen and enable remote control of devices to be easily performed. By arranging displaying of the information specific to the device to be suspended according to device state information, the present invention can reduce the risk of remote control being impeded by specific information displayed in an indiscriminant and disordered manner, and efficient remote control operations may be achieved.

Abstract: A spectroscopy device that separates input light into a plurality of wavelength ranges. A metal body has a hole or aperture which is open on the upper side. The hole or aperture is formed in a polygonal shape having at least a pair of opposite faces not parallel to each other in horizontal cross-section. Inner side faces of the hole or aperture are finished as mirror like reflection surfaces. Polarized input light inputted from the opening to the hole or aperture is reflected by the reflection surfaces and a standing wave is generated inside of the hole or aperture by self interference, whereby the input light is separated into a plurality of wavelength ranges.

Abstract: An imaging device includes: a plurality of pixel portions including color filters and photoelectric conversion portions, respectively, each of the photoelectric conversion portions generating charge according to light incident thereon, the color filters being provided on a light incidence side of the respective photoelectric conversion portions, a distance between the photoelectric conversion portions and the color filters being shorter than or equal to 3 ?m; and a separation wall which is provided between adjoining ones of the color filters and separates the color filters from each other.

Abstract: A solid-state imaging device includes: a plurality of pixel portions each comprising a photoelectric conversion portion disposed in a semiconductor substrate; and a light shield layer disposed over the semiconductor substrate and having openings which are located over parts of the photoelectric conversion portions, respectively, each of the pixel portions further includes: a transistor comprising a gate electrode, a channel region, and a charge storage portion which is located between the semiconductor substrate and the gate electrode and stores charge generated in the photoelectric conversion portion, the channel region and the charge storage portion are covered with the light shield layer, and the photoelectric conversion portion extends to under the channel region of the transistor.

Abstract: A solid-state imaging device includes photo-sensitive cells for converting incident light to signal charges, and a transfer path for transferring, in response to a drive signal fed through a transfer electrode, the signal charges read out from the photo-sensitive cells. The solid-state imaging device outputs electrical signals corresponding to the signal charges thus transferred. The transfer electrode is divided into a first transfer electrode for transferring the signal charges and a second transfer electrode for reading out the signal charges from the photo-sensitive cells.

Abstract: A solid-state image sensor includes: photoelectric conversion section; a floating gate provided above a semiconductor substrate; a first transistor for accumulating charge generated in said photoelectric conversion section into said floating gate; and a second transistor for reading a signal corresponding to the charge accumulated in said floating gate. A distance between a gate electrode of said first transistor and said floating gate is shorter than a distance between a gate electrode of said second transistor and said floating gate.

Abstract: A solid-state image sensor includes: a photoelectric conversion section; a floating gate provided above a semiconductor substrate; a first transistor for accumulating charge generated in said photoelectric conversion section into said floating gate; and a second transistor for reading a signal corresponding to the charge accumulated in said floating gate. In an oxide film formed between said floating gate and said semiconductor substrate, at least a part of said oxide film in a region overlapping with the gate electrode of said first transistor is formed thinner than said oxide film in a region overlapping with the gate electrode of said second transistor.

Abstract: An imaging device includes a solid state imaging element that includes a plurality of pixels; and a driving unit; wherein each pixel includes: a photoelectric converting element includes a pair of electrodes stacked above a semiconductor substrate and a photoelectric converting layer arranged between the electrodes; a connecting portion that is arranged in the semiconductor substrate; a potential barrier portion; a first charge accumulating portion; and a signal output circuit, and wherein the driving unit drives the solid state imaging element so that the connecting portion and the potential barrier portion are set to a same potential by injecting charges into the connecting portion.

Abstract: An imaging device includes a solid state imaging element that includes a plurality of pixels; and a driving unit; wherein each pixel includes: a photoelectric converting element includes a pair of electrodes stacked above a semiconductor substrate and a photoelectric converting layer arranged between the electrodes; a connecting portion that is arranged in the semiconductor substrate; a potential barrier portion; a first charge accumulating portion; and a signal output circuit, and wherein the driving unit executes such a same potential driving that the connecting portion and the potential barrier portion are set to have a same potential by varying the potential of the potential barrier portion.

Abstract: A solid state imaging device is provided and includes: a semiconductor substrate a photoelectric conversion element including a pair of electrodes and a photoelectric conversion layer sandwiched between the pair of electrodes; a signal output circuit including an MOS transistor for outputting a signal responsive to an electric charge generated by the photoelectric conversion layer; a first electric charge storage section which is provided in the semiconductor substrate and in which the electric charge generated by the photoelectric conversion layer is directly stored; a second electric charge storage section provided in the semiconductor substrate and connected to a gate of an output transistor in the signal output circuit; and an electric charge transfer section that transfers the electric charge, stored in the first electric charge storage section, to the second electric charge storage section.

Abstract: An image pickup apparatus includes: a solid-state image sensing device that includes a plurality of pixels, each of the pixels including: a photoelectric conversion film; and a photoelectric conversion element that is formed in the semiconductor substrate below the photoelectric conversion film, are made up of at least three types of photoelectric conversion elements for detecting light in different wave ranges, of visible light, and absorbs light in a wave range different from the wave ranges detected in the at least three types of photoelectric conversion elements and generates a charge responsive to the absorbed light, the image pickup apparatus further including: a monochrome image data generation unit; a color image data generation unit; and a record image data generation unit.

Abstract: A spectroscopy device that separates input light into a plurality of wavelength ranges. A metal body has a hole or aperture which is open on the upper side. The hole or aperture is formed in a polygonal shape having at least a pair of opposite faces not parallel to each other in horizontal cross-section. Inner side faces of the hole or aperture are finished as mirror like reflection surfaces. Polarized input light inputted from the opening to the hole or aperture is reflected by the reflection surfaces and a standing wave is generated inside of the hole or aperture by self interference, whereby the input light is separated into a plurality of wavelength ranges.

Abstract: A lower electrode, a photoelectric conversion layer, and an upper electrode are stacked in order above a semiconductor substrate, and a charge storage section that stores charge generated in the photoelectric conversion layer is connected to the lower electrode. The charge stored in the charge storage section is swept away by a charge sweeping away section for a given time from the endpoint of exposure. The given time is a time taken until the residual image charge existing in the photoelectric conversion layer at the exposure end point time is sufficiently discharged to the outside of the photoelectric conversion layer in a state in which the same bias as that at the exposure start time point is applied to the photoelectric conversion layer.

Abstract: A solid-state imaging element contains a plurality of photoelectric converting regions, vertical transfer portions, a horizontal transfer portion, and an output portion. These photoelectric converting regions are arranged on a surface of a semiconductor substrate along a row direction, and a column direction perpendicular to the row direction. The photoelectric converting regions are subdivided into main regions “m” having relatively wide light-receiving areas, and sub-regions “s” having relatively narrow light-receiving areas. These main areas “m” and sub-areas “s” produce signal electron charges corresponding to light having predetermined spectral sensitivities, and then store the produced signal electron charges. A partial photoelectric converting region within the photoelectric converting regions corresponds to different color light with respect to the main region “m” and the subregion “s.