Abstract: An insulating tube has one end and another end. An An avalanche photodiode (APD) is provided outside the one end of the insulating tube. The another end of the insulating tube is air-tightly connected to an outer flange through a stem inner wall. Capacitors electrically connected to the APD are provided in the insulating tube. The capacitors remove direct current components from signals that the APD generates when detecting electrons. By providing the capacitors in the insulating tube, response of output signals can be prevented from being impaired.

Abstract: In an electron tube, one end of an insulating tube is protruded toward the inside of an envelope, and an avalanche photodiode (APD) is provided on the one end of the insulating tube. Another end of the insulating tube is connected to an outer stem of the envelope. Alkali sources are provided inside the envelope. The alkali sources are disposed inside the envelope and generates alkali metal vapor to thereby form a photocathode on a predetermined part of the internal surface of the envelope. The alkali sources and insulating tube are isolated from each other by a separating member. When the electron tube is manufactured, the alkali metal vapor that is generated from the alkali sources is not deposited on the insulating tube due to existence of the separating member. This prevents voltage resistance between the envelope and APD from being decreased and the electrical field in the electron tube from being adversely affected, thereby preventing incident efficiency of electrons to the APD from being decreased.

Abstract: A photocathode is formed on a predetermined portion of the internal surface of an envelope of an electric tube. An avalanche photodiode (APD) is provided inside the envelope. The APD is surrounded by a cover and a tubular inner wall. A manganese bead and an antimony bead serving as evaporation sources are disposed in the vicinity outside the inner wall. The manganese bead and the antimony bead are surrounded by a tubular outer wall. The manganese bead and the antimony bead generate metal vapor to thereby form the photocathode. In forming the photocathode, the cover, inner wall, outer wall prevent the metal vapor from being deposited on the APD or an unintended portion inside the electron tube.

Abstract: A liquid scintillation counter 10 serving as an optical measurement apparatus includes: an HPD 24, a charge amplifier 26, a voltage amplifier 28, a comparator 30, a counter 32, a multi-channel analyzer 34, a display 38, and the like. The HPD 24 has a photocathode 24a and an APD 24b for outputting a signal that corresponds to the number of incident photons. The comparator 30 outputs a logic pulse signal, serving as a comparison result signal, only when the signal outputted from the HPD 24 and amplified by the charge amplifier 26 and voltage amplifier 28 is larger than a prescribed threshold value. This threshold value is set larger than an output signal that is outputted when a single photoelectron is emitted from the photocathode 24a and smaller than another output signal that is outputted when two or more photoelectrons are emitted.

Abstract: An optical measurement apparatus 10 primarily includes: a photon detection unit 12 for detecting incident photons, a time signal output unit 14 for outputting a time signal, and a storage unit 16 for storing the time signal outputted from the time signal output unit 14 when the photon detection unit 12 detects photons. The photon detection unit 12 includes a HPD 24 having a photocathode 24a and an APD 24b, a TZ amplifier 26, a peak holding circuit 28, and an A/D converter 30. The time signal output unit 14 includes a timer 32 and a counter 34. The storage unit 16 includes a comparator 36 and a memory 38. When photons impinge on the HPD 24, a trigger signal is outputted from the comparator 36, causing the photon-number outputted from the A/D converter 30 and the time data outputted from the counter 34 to be stored in the memory 38.

Abstract: In order to provide an imaging apparatus that uses an electron-bombarded multiplying tube with an internal solid imaging device with a long life, improved S/N ratio, high resolution, and moreover high sensitivity, an electron-bombarded multiplying tube with a photocathode 13 and a back-illuminated FT-CCD 11 sealed in a vacuum vessel is used as an imaging element. The vacuum vessel is made from a faceplate 12, a ceramic tube 16, and a ceramic stem 17. The photocathode 13 emits photo-electrons from a surface opposite from the incidence plane, in accordance with incident light. The FT-CCD 11 has an incidence plane disposed in the pathway of photo-electrons from the opposite surface. An imaging portion 11a of the FT-CCD 11 has pixels in the vertical direction in the same number as or in greater numbers than the number of output scan lines. A transfer electrode of the imaging portion 11a is constantly applied with a negative voltage during an image accumulation period.

Abstract: In an electron tube 1, a space S between a periphery part 15b of a semiconductor device 15 and a stem 11 is filled with an insulating resin 20. The insulating resin 20 functions as a reinforcing member while the electron tube 1 is assembled under high-temperature condition, thereby preventing a bump 16 from coming off a bump connection portion 19. Since the space S is only partly closed by the resin 20, the space between the semiconductor device 15 and the stem 11 is ensured a ventilability. That is, no air reservoir is formed between an electron incidence part 15a at the center of the semiconductor device 15 and the surface C of the stem 11, whereby air expanding at high temperature does not damage the electron incidence part 15a of the back-illuminated semiconductor device 15.

Abstract: An electron tube 10 mainly includes a sleeve 12, an input plate 14 having a photocathode surface 18, a stem 16 and a CCD 20. A vacuum is provided in an interior of the electron tube 10. The CCD 20 is fixed onto the stem such that a rear surface B faces the photocathode surface 18. In the CCD 20, on a single conductive type semiconductor substrate 64, a buried layer 66, a barrier region 68, a SiO2 layer 70, a storage electrode layer 72, a transmission electrode layer 74, and a barrier electrode layer 76 are formed at their predetermined positions. A PSG film 78 is formed at an entire front surface A over these layers to flatten the surface of the CCD 20. Further, SiN film 106 mainly composed of SiN is formed above the PSG film over the entire front surface A.

Abstract: A photodetecting device is characterized by comprising a photodetecting section having a photoelectric surface for emitting photoelectrons upon incidence of light, a semiconductor detection element having an electron incident surface on which the photoelectrons can be incident, and a vacuum vessel in which the photoelectric surface is arranged on one inner surface, and the semiconductor detection element is arranged on the other inner surface opposing the one surface, and cooling means for cooling a structure on the semiconductor detection element side of the vacuum vessel.

Abstract: The system comprises a main body unit 4 which has a first terminal 7 and a head unit 6 which has a second terminal 9 attachable to and detachable from the first terminal 7 and which is attachable to and detachable from the main body unit 4. The head unit 6 has a photosensor 18 connected to the second terminal 9 and adapted to generate photocurrent according to incident optical power, and a capacitor 20 connected to the photosensor 18. The main body unit 4 has a charging circuit 31 connected to the first terminal 7 and being capable of charging the capacitor 20 while the first terminal 7 is coupled to the second terminal 9, and a reading circuit 31 capable of reading a voltage of the capacitor 20 while the first terminal 7 is coupled to the second terminal 9. The capacitor 20 is discharged as the photocurrent is generated.

Abstract: This invention relates to an electron tube having a structure for enabling a stable operation for a long time. In the electron tube, at least a confining mechanism is arranged between a photocathode and the electron incident surface of a semiconductor device, which are arranged to oppose each other. In the arrangement, the area of the opening of the confining mechanism is at least equal to or smaller than that of the electron incident surface, thereby confining the orbits of photoelectrons from the photocathode. This structure avoids bombardment of electrons arriving at portions other than the electron incident surface of the semiconductor device and prevents the semiconductor device from being unnecessarily charged.

Abstract: The present invention relates to an electron tube comprising, at least, a cathode electrode, a face plate having a photocathode, and an electron entrance surface provided at a position where the electron emitted from the photocathode reaches. The object of the present invention is to provide an electron tube which can reduce its size and has a structure for improving the workability in its assembling process. In particular, the electron tube according to the present invention has a bonding ring, provided between the face plate and the cathode electrode, for bonding the face plate and the cathode electrode together. The bonding ring is made of a metal material selected from the group consisting of In, Au, Pb, alloys containing In, and alloys containing Pb.

Abstract: To provide an electron tube having good airtightness and being appropriate for mass production, indium affixed to the inner surface of a sealing metal support member is provided between a side tube and input faceplate. The input faceplate is pushed against the side tube. As a result, the indium is squeezed by a pressure receiving surface provided on the end face of the side tube. Since the pressure receiving surface is in a generally declining shape from the inside out, the force of the pressing surface causes the indium to flow outward toward the sealing metal support member. Therefore, the indium is firmly affixed to the pressure receiving surface, and the side tube and input faceplate can be reliably sealed by the indium.

Abstract: An electron tube in which a side tube and a faceplate are sealed together using a malleable metal with a low melting point. The metal is made to spread out along the outer surface of the faceplate due to pressure from a first sealing portion of a sealing metal support member and along the peripheral surface of the electron tube due to pressure from a second sealing portion of the sealing metal support member. Accordingly, the outer side of the corner portion formed by the faceplate and the side tube is covered with the metal. This construction not only reliably secures the input faceplate to the side tube, but also is extremely effective in preserving the airtightness of the electron tube. Since the first sealing portion is pressed toward the faceplate, an appropriate pressure can be applied to the metal interposed between the first sealing portion and the faceplate, improving the sealability of the metal against the faceplate and the first sealing portion.

Abstract: This invention relates to an electron tube which stabilizes the orbits of electrons accelerated and focused by an electron lens and has a structure for effectively suppressing noise generated due to discharge. This electron tube has, at two ends of an insulating container, a cathode electrode and an anode electrode which constitute the electron lens. Particularly, in the electron tube, one end of the cathode electrode and a photocathode are supported by a conductive member arranged at one end of the insulating container, and the cathode electrode is electrically connected to the photocathode. The cathode electrode partially extends to a stem along the inner wall of the insulating container and is tapered toward the stem so that the distal end portion of the cathode electrode is separated from the inner wall of the insulating container.

Abstract: The present invention relates to an electron tube includes, at least, a cathode electrode and a face plate having a photocathode which are arranged at one end of a body, and a stem arranged at the other end of the body for defining the position of an electron entrance surface where the electron emitted from the photocathode reaches. The object of the present invention is to provide an electron tube which can reduce its size and has a structure for improving the workability in its assembling process. In particular, the electron tube in accordance with the present invention comprises a bonding ring, provided between the face plate and the cathode electrode, for bonding the face plate and the cathode electrode together. The bonding ring is made of a metal material selected from the group consisting of In, Au, Pb, alloys containing In, and alloys containing Pb.

Abstract: This invention relates to an electron tube having a structure for enabling a stable operation for a long time. In the electron tube, at least a confining mechanism is arranged between a photocathode and the electron incident surface of a semiconductor device, which are arranged to oppose each other through a container. Particularly, the area of the opening of the confining mechanism is smaller than that of the electron incident surface, thereby confining the orbits of photoelectrons from the photocathode. This structure avoids bombardment of electrons arriving at portions other than the electron incident surface of the semiconductor device and prevents the semiconductor device from being unnecessarily charged.

Abstract: When light is incident on the photoelectric surface of this electron tube, photoelectrons are emitted. These photoelectrons are accelerated and incident on an electron beam irradiation diode. A reverse voltage of about 100 V is applied to the electron beam irradiation diode to form a depletion region almost throughout an anode layer and near the p-n junction interface of a silicon substrate. The incident accelerated electrons release a kinetic energy in a heavily doped p-type layer having an electron incidence surface and the depleted anode layer to form electron-hole pairs. In this case, since the heavily doped p-type layer having the electron incidence surface is very thin, the energy is hardly released in this layer, and almost all energy is released in the depletion region. Signal charges extracted from the electron-hole pairs formed upon releasing the energy are output as a signal from two electrodes.

Abstract: To eliminate a distortion of an output image detected by a semiconductor device serving as an anode in an electron tube, a faceplate is configured to a planar shape and a window provided on the semiconductor device has a pincushion outer profile in which points on the outer profile of the window that correspond to points on the outer profile of the faceplate are outwardly positioned farther than the corresponding points in the outer profile of the faceplate that are apart from the center of the faceplate. Further, the window is divided into a plurality of segments to define picture elements.

Abstract: In a photomultiplier of the present invention, a semiconductor device arranged in an envelope to oppose a photocathode is constituted by a semiconductor substrate of a first conductivity type, a carrier multiplication layer of a second conductivity type different from the first conductivity type, which is formed on the semiconductor substrate by opitaxial growth, a breakdown voltage control layer of the second conductivity type, which is formed on the carrier multiplication layer and has a dopant concentration higher than that of the carrier multiplication layer, a first insulating layer formed on the breakdown voltage control layer and said carrier multiplication layer while partially exposing the surface of the breakdown voltage control layer as a receptor for photoelectrons and consisting of a nitride, and an ohmic electrode layer formed on a peripheral surface portion of the receptor of the breakdown voltage control layer.