Abstract: A filament winding apparatus includes a rail extending in a first direction, a core material support device that supports a core material, and a winding device that winds a fiber bundle onto an outer peripheral surface of the core material, the winding device including: a guide unit having an opening through which the core material passes, and guiding the fiber bundle; and a main frame on which the guide unit is mounted; wherein the main frame is movable relative to the core material in the first direction, the main frame is movable in a second direction orthogonal to the first direction, and the main frame is rotatable around a first rotational axis extending in a third direction orthogonal to each of the first direction and the second direction.

Abstract: A filament winding device includes a fiber bundle retainer that temporarily retains fiber bundles. The fiber bundle retainer includes: a reel member including an outer peripheral portion having pins movable in the axial direction relative to the fiber bundles supplied through fiber bundle guides and rotatable about the axis of the liner, the reel member capable of winding the fiber bundles onto the outer peripheral portion; a first cutting unit configured to cut a part of each of the fiber bundles in the circumferential direction, the part being between a part of the fiber bundle wound on the outer peripheral portion and a part of the fiber bundle wound on the liner; and a second cutting unit different from the first cutting unit and configured to cut a part of each of the fiber bundles in the axial direction, the part being wound on the outer peripheral portion.

Abstract: A plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma processing, including, at an upper side therein, a dielectric plate, through which microwaves are transmitted; a radio frequency power supply which supplies radio frequency power for the microwaves; a cavity resonator which resonates microwaves transmitted from the radio frequency power supply through a waveguide and is placed above the dielectric plate; and a magnetic field forming mechanism which forms a magnetic field in the processing chamber. The plasma processing apparatus further includes: a ring-shaped conductor placed inside the cavity resonator; and a circular conductor which is placed inside the cavity resonator and placed in an opening at the center of the ring-shaped conductor.

Abstract: A vehicle includes a power source, a requested driving force calculator, and an actual driving force calculator, and a driving controller. The requested driving force calculator calculates a requested driving force on the basis of a driving operation. The actual driving force calculator calculates an actual driving force following the requested driving force, while limiting a rate of change in the actual driving force. The driving controller controls the power source to output the actual driving force calculated. The actual driving force calculator changes the rate of change in the actual driving force, on the basis of a difference between the requested driving force and the actual driving force, and a lapsed time of limiting the rate of change in the actual driving force.

Abstract: In a plasma processing apparatus including a processing chamber disposed in a vacuum chamber, a sample stage disposed in the processing chamber and on which a sample is placed, in the vacuum chamber, a second shower plate disposed above the sample stage, a first shower plate disposed above the second shower plate, and a dielectric window disposed above the first shower plate, first gas is supplied from a first gas supply unit to a space between the dielectric window and the first shower plate, and second gas is supplied from a second gas supply unit to a space between the first shower plate and the second shower plate.

Abstract: An object of the invention is to provide a plasma processing apparatus capable of both isotropic etching in which a flux of ions to a sample is reduced and anisotropic etching in which ions are incident on a sample in the same chamber.

Abstract: A tubephragm pump includes a tubephragm that has a pump head portion that forms a pump chamber, a driving head that holds the tubephragm and expands and contracts the pump chamber by directly pressing and pulling the pump head portion in a direction intersecting with a transfer direction of a transfer fluid, a driving unit that drives the driving head back and forth in a driving direction to expand and contract the pump chamber, and a control unit that controls the driving unit. The tubephragm is in a flat shape with a cross-sectional shape intersecting with the transfer direction of the transfer fluid of the pump chamber having a length in a direction intersecting with the driving direction longer than a length in the driving direction. A pair of liquid contacting surfaces opposing in the driving direction of the pump chamber move while maintaining a parallel state.

Abstract: A vehicle includes a power source, a requested driving force calculator, and an actual driving force calculator, and a driving controller. The requested driving force calculator calculates a requested driving force on the basis of a driving operation. The actual driving force calculator calculates an actual driving force following the requested driving force, while limiting a rate of change in the actual driving force. The driving controller controls the power source to output the actual driving force calculated. The actual driving force calculator changes the rate of change in the actual driving force, on the basis of a difference between the requested driving force and the actual driving force, and a lapsed time of limiting the rate of change in the actual driving force.

Abstract: A tubephragm pump includes a tubephragm that has a pump head portion that forms a pump chamber, a driving head that holds the tubephragm and expands and contracts the pump chamber by directly pressing and pulling the pump head portion in a direction intersecting with a transfer direction of a transfer fluid, a driving unit that drives the driving head back and forth in a driving direction to expand and contract the pump chamber, and a control unit that controls the driving unit. The tubephragm is in a flat shape with a cross-sectional shape intersecting with the transfer direction of the transfer fluid of the pump chamber having a length in a direction intersecting with the driving direction longer than a length in the driving direction. A pair of liquid contacting surfaces opposing in the driving direction of the pump chamber move while maintaining a parallel state.

Abstract: A plasma processing apparatus includes a processing chamber configured to perform a plasma processing on a sample, a first radio frequency power supply configured to generate a plasma, a sample stage configured to place the sample thereon, a second radio frequency power supply configured to supply a radio frequency power to the sample stage, a mass flow controller configured to supply a gas into the processing chamber, and a control device configured to change the radio frequency power supplied from the first radio frequency power supply or the second radio frequency power supply based on a change of plasma impedance after a first gas is switched to a second gas.

Abstract: A reciprocating pump includes: a pump head having an inner space; a diaphragm configured to partition the inner space of the pump head into a pump chamber into which a transfer fluid is to be introduced and a working chamber into which working air is to be introduced; a driving device including a reciprocating member coupled to the diaphragm, the driving device being capable of driving the reciprocating member with the working air at least in a direction that the diaphragm is retracted; and a working air switching device.

Abstract: A plasma processing apparatus includes a processing chamber, a radio frequency power source, and a magnetic-field generation unit. In the processing chamber, a sample is subjected to plasma processing. The radio frequency power source supplies radio frequency power for a microwave. The magnetic-field generation unit forms a magnetic field for generating plasma by an interaction with the microwave. The magnetic-field generation unit includes a first power source and a second power source. The first power source causes a current to flow in a first magnetic-field forming coil configured to forma magnetic field in the processing chamber. The second power source causes a current to flow in a second magnetic-field forming coil configured to form a magnetic field in the processing chamber. Sensitivity for magnetic-field changing by the first magnetic-field forming coil is higher than sensitivity for magnetic-field changing by the second magnetic-field forming coil.

Abstract: Provided is a plasma processing apparatus or method in which a procedure containing processing steps of supplying a predetermined amount of processing gas into a processing chamber disposed in a vacuum vessel through a gas supply unit, and processing a wafer placed on a sample table disposed in the processing chamber by generating plasma in the processing chamber using the processing gas supplied on each different condition. The procedure includes a first transition step of adjusting and supplying the rare gas to make a pressure of the rare gas equal to a condition of the processing gas used in the former processing step, and a second transition step of adjusting and supplying the rare gas after the first transition step such that a pressure and a flow rate of the rare gas come to be equal to a condition of the processing gas used in the later processing step.

Abstract: One object is to reduce an allowable torque of a driving device. A driving device for driving a panel of a heliostat includes a second axis driving portion for rotating the panel around a second axis non-parallel to a first axis around which the panel is turned with respect to a horizontal plane. The second axis of the second axis driving portion is inclined at a predetermined angle with respect to a panel surface of the panel.

Abstract: In a plasma processing apparatus comprising a processing chamber arranged in a vacuum chamber, a sample stage arranged under the processing chamber and having its top surface on which a wafer to be processed is mounted, a vacuum decompression unit for evacuating the interior of the processing chamber to reduce the pressure therein, and introduction holes arranged above said sample stage to admit process gas into the processing chamber, the wafer having its top surface mounted with a film structure and the film structure being etched by using plasma formed by using the process gas, the film structure is constituted by having a resist film or a mask film, a poly-silicon film and an insulation film laminated in this order from top to bottom on a substrate and before the wafer is mounted on the sample stage and the poly-silicon film underlying the mask film is etched, plasma is formed inside the processing chamber to cover the surface of members inside the processing chamber with a coating film containing a compo

Abstract: A panel driving device rotates a panel structure to vary a tilt thereof or turns the panel structure about a vertical axis, the panel structure including a panel for receiving sunlight, the panel driving device including: a drive source including a rotational portion capable of rotating; and a transmission mechanism including a connection portion connected to the panel structure, and configured to convert a rotational movement of the rotational portion into rotation or turning of the panel structure without converting the rotational movement of the rotational portion into a linear movement, wherein the connection portion is offset from a rotation axis of the rotational portion.

Abstract: In a plasma processing apparatus comprising a processing chamber arranged in a vacuum chamber, a sample stage arranged under the processing chamber and having its top surface on which a wafer to be processed is mounted, a vacuum decompression unit for evacuating the interior of the processing chamber to reduce the pressure therein, and introduction holes arranged above said sample stage to admit process gas into the processing chamber, the wafer having its top surface mounted with a film structure and the film structure being etched by using plasma formed by using the process gas, the film structure is constituted by having a resist film or a mask film, a poly-silicon film and an insulation film laminated in this order from top to bottom on a substrate and before the wafer is mounted on the sample stage and the poly-silicon film underlying the mask film is etched, plasma is formed inside the processing chamber to cover the surface of members inside the processing chamber with a coating film containing a compo

Abstract: In a plasma processing apparatus comprising a processing chamber arranged in a vacuum chamber, a sample stage arranged under the processing chamber and having its top surface on which a wafer to be processed is mounted, a vacuum decompression unit for evacuating the interior of the processing chamber to reduce the pressure therein, and introduction holes arranged above said sample stage to admit process gas into the processing chamber, the wafer having its top surface mounted with a film structure and the film structure being etched by using plasma formed by using the process gas, the film structure is constituted by having a resist film or a mask film, a poly-silicon film and an insulation film laminated in this order from top to bottom on a substrate and before the wafer is mounted on the sample stage and the poly-silicon film underlying the mask film is etched, plasma is formed inside the processing chamber to cover the surface of members inside the processing chamber with a coating film containing a compo

Abstract: A plasma processing apparatus includes a processing chamber configured to perform a plasma processing on a sample, a first radio frequency power supply configured to generate a plasma, a sample stage configured to place the sample thereon, a second radio frequency power supply configured to supply a radio frequency power to the sample stage, a mass flow controller configured to supply a gas into the processing chamber, and a control device configured to change the radio frequency power supplied from the first radio frequency power supply or the second radio frequency power supply based on a change of plasma impedance after a first gas is switched to a second gas.