Abstract: A semiconductor device includes: an insulated circuit substrate including a conductive plate on a top surface side; a semiconductor chip mounted on the conductive plate; a printed circuit board provided over and electrically connected to the semiconductor chip; a first external connection terminal electrically connected to the conductive plate and extending upward from the conductive plate; a first conductive block provided to surround an outer circumference of the first external connection terminal in an insulated state; and a sealing member provided to seal the semiconductor chip, the printed circuit board, and the first conductive block.

Abstract: A semiconductor module, including a board that has first and second conductive plates located side by side on a first insulating plate, a first external connection terminal located on the first conductive plate, first and second semiconductor chips respectively disposed on the first and second conductive plates, and a printed-circuit board including a second insulating plate and first and second wiring boards located on a first principal plane of the second insulating plate. The first wiring board electrically connects an upper surface electrode of the first semiconductor chip and a relay area on the second conductive plate. The second wiring board is electrically connected to an upper surface electrode of the second semiconductor chip. The semiconductor module further includes a second external connection terminal electrically connected to an end portion of the second wiring board and formed on the second principal plane of the second insulating plate.

Abstract: A semiconductor module having a first metal wiring board, a second metal wiring board, a third metal wiring board, and a first semiconductor element and a second semiconductor element that each include an emitter electrode and a collector electrode. The second metal wiring board is disposed over a principal surface of the first metal wiring board with an insulation material therebetween. The third metal wiring board has a principal surface thereof facing the first metal wiring board. The first and second semiconductor elements are disposed to face directions opposite to each other. The collector electrodes of the first and second semiconductor elements respectively face the principal surfaces of the first and third metal wiring boards. The emitter electrodes of the first and second semiconductor elements are respectively connected to the principal surfaces of the third and second metal wiring boards.

Abstract: A power converter includes a capacitor and a substrate on which a plurality of switching elements for power conversion are mounted. The power converter includes a cooler for cooling the plurality of switching elements and a housing that accommodates the capacitor, the substrate, and the cooler. The power converter includes a power connector exposed from the housing and an output connector exposed from the housing. The power converter includes a plurality of lines that include a plurality of power lines each electrically connected to the capacitor, given switching elements, and the power connector. The plurality of lines include a plurality of output lines each electrically connected to given switching elements and the output connector. At least one among the plurality of lines is a line that includes a conductive pattern formed on the substrate.

Abstract: A power converter includes a positive busbar electrically connected to a positive terminal and the first capacitor electrode, and includes a negative busbar electrically connected to a negative terminal and the second capacitor electrode. The power converter includes output busbars each electrically connected to a given output terminal among multiple output terminals, a given high-side switching element among a plurality of high-side switching elements, and a given low-side switching element among a plurality of low-side switching elements. The power converter includes a cooler that cools the high-side switching elements and the low-side switching elements. The power converter includes a housing that accommodates a supply tube and a discharge tube. The positive terminal, the negative terminal, the output terminals, the inlet port, and the outlet port are exposed on the housing. The inlet port, the outlet port, the supply tube, and the discharge tube are separate members from the housing.

Abstract: A semiconductor device includes a wiring board that includes a first insulating layer, a first conductive layer arranged over the first insulating layer, a second conductive layer arranged under the first insulating layer, the wiring board further including a magnetic layer that is arranged between the first insulating layer and the first or second conductive layer and that has a higher specific magnetic permeability than the first and second conductive layers, and a carbon layer that is arranged between the first insulating layer and the first or second conductive layer and that has a higher thermal conductivity in a planary direction than the first and second conductive layers; a semiconductor chip electrically connected to the first and second conductive layers; and an insulating circuit board arranged separately from the wiring board and that has the semiconductor chip mounted thereon.

Abstract: A semiconductor device having a semiconductor module that includes a first conductor layer and a second conductor layer facing each other, a group of semiconductor elements that are formed between the first and second conductor layers, and are connected to the second conductor layer respectively via a group of conductor blocks, and a circuit board having one end portion thereof located in a space between the semiconductor elements and the second conductor layer. Each semiconductor element includes first and second main electrodes respectively formed on first and second main surfaces thereof, and a control electrode that is formed on the second main surface. The first main electrode is electrically connected to the first conductor layer. The second main electrode is electrically connected to the second conductor layer via the respective conductor block. The circuit board includes a first wiring layer electrically connected to the control electrodes of the semiconductor elements.

Abstract: A semiconductor device includes circuit substrates 3 and 9 including circuit pattern layers 3c/9b, a semiconductor element 5 mounted to the circuit pattern layer 3c, a connecting pin 7 connecting the semiconductor element 5 to the circuit pattern layer 9b, a pin-shaped terminal 17 connected to the circuit pattern layer 9b, a sealing member 2 sealing the circuit substrates 3 and 9, the semiconductor element 5, and the connecting pin 7, and an external terminal 27 including a flat plate portion 27s and an extending portion 27t bent from the flat plate portion 27s and extends away from the circuit substrate 9, in which the flat plate portion 27s is connected to the pin-shaped terminal 17 and arranged in parallel with the circuit pattern layer 9b, and the extending portion 27t is provided in a range of a width in a transverse direction of the sealing member 2.

Abstract: A semiconductor module includes a laminated substrate having an insulating plate, a circuit pattern on an upper surface of the insulating plate and a heat dissipating plate on a lower surface of the insulating plate. The module further includes a semiconductor device having upper and lower surfaces, and including a collector electrode on the device upper surface, an emitter electrode and a gate electrode on the device lower surface, and the emitter electrode and the gate electrode each being bonded to an upper surface of the circuit pattern via a bump, and a block electrode bonded to the collector electrode. The block electrode includes a flat plate portion covering over the semiconductor device, and a pair of projecting portions projecting toward the circuit pattern from both ends of the flat plate portion in a thickness direction orthogonal to a surface of the insulating plate, and being bonded to the circuit pattern.

Abstract: A semiconductor device having a semiconductor module that includes a first conductor layer and a second conductor layer facing each other, a group of semiconductor elements that are formed between the first and second conductor layers, and are connected to the second conductor layer respectively via a group of conductor blocks, and a circuit board having one end portion thereof located in a space between the semiconductor elements and the second conductor layer. Each semiconductor element includes first and second main electrodes respectively formed on first and second main surfaces thereof, and a control electrode that is formed on the second main surface. The first main electrode is electrically connected to the first conductor layer. The second main electrode is electrically connected to the second conductor layer via the respective conductor block. The circuit board includes a first wiring layer electrically connected to the control electrodes of the semiconductor elements.

Abstract: A semiconductor device having a semiconductor module. The semiconductor module includes first and second conductor layers facing each other, a first semiconductor element provided between the first and second conductor layers, positive and negative electrode terminals respectively provided on edge portions of the first and second conductor layers at a first side of the semiconductor module in a top view of the semiconductor module, control wiring that is electrically connected to the first control electrode, and that extends out of the first and second conductor layers at a second side of the semiconductor module that is opposite to the first side in the top view, and a control terminal that is electrically connected to the control wiring, that is positioned outside the first and second conductor layers in the top view, and that has an end portion that is aligned with the positive and negative electrode terminals.

Abstract: A semiconductor module, including a board that has first and second conductive plates located side by side on a first insulating plate, a first external connection terminal located on the first conductive plate, first and second semiconductor chips respectively disposed on the first and second conductive plates, and a printed-circuit board including a second insulating plate and first and second wiring boards located on a first principal plane of the second insulating plate. The first wiring board electrically connects an upper surface electrode of the first semiconductor chip and a relay area on the second conductive plate. The second wiring board is electrically connected to an upper surface electrode of the second semiconductor chip. The semiconductor module further includes a second external connection terminal electrically connected to an end portion of the second wiring board and formed on the second principal plane of the second insulating plate.

Abstract: A semiconductor module having a first metal wiring board, a second metal wiring board, a third metal wiring board, and a first semiconductor element and a second semiconductor element that each include an emitter electrode and a collector electrode. The second metal wiring board is disposed over a principal surface of the first metal wiring board with an insulation material therebetween. The third metal wiring board has a principal surface thereof facing the first metal wiring board. The first and second semiconductor elements are disposed to face directions opposite to each other. The collector electrodes of the first and second semiconductor elements respectively face the principal surfaces of the first and third metal wiring boards. The emitter electrodes of the first and second semiconductor elements are respectively connected to the principal surfaces of the third and second metal wiring boards.

Abstract: Semiconductor equipment includes semiconductor modules sealed with a resin, each having first and second connection terminals exposed from the resin, a capacitor including third and fourth connection terminals, a cooler directly contacting the semiconductor modules and the capacitor, a busbar including a first busbar connecting the first connection terminal to the third connection terminal, a second busbar connecting the second connection terminal to the fourth connection terminal, and a first insulating layer sandwiched by the first and second busbars, main surfaces of the first and second busbars being parallel to each other, a control circuit board configured to control the semiconductor modules, and a heat transfer component including a main body connected to the cooler, and a second insulating layer arranged on the main body, the main body being in contact with the busbar and the control circuit via the second insulating layer.

Abstract: A semiconductor device includes circuit substrates 3 and 9 including circuit pattern layers 3c/9b, a semiconductor element 5 mounted to the circuit pattern layer 3c, a connecting pin 7 connecting the semiconductor element 5 to the circuit pattern layer 9b, a pin-shaped terminal 17 connected to the circuit pattern layer 9b, a sealing member 2 sealing the circuit substrates 3 and 9, the semiconductor element 5, and the connecting pin 7, and an external terminal 27 including a flat plate portion 27s and an extending portion 27t bent from the flat plate portion 27s and extends away from the circuit substrate 9, in which the flat plate portion 27s is connected to the pin-shaped terminal 17 and arranged in parallel with the circuit pattern layer 9b, and the extending portion 27t is provided in a range of a width in a transverse direction of the sealing member 2.

Abstract: A semiconductor device includes a base plate, a plurality of semiconductor units provided in parallel on the base plate, the plurality of semiconductor units implementing a pair, each semiconductor unit including a semiconductor chip and a rod-shaped unit-side control terminal, the unit-side control terminal being connected to the semiconductor chip, the unit-side control terminal extending opposite to the base plate; and an interface unit including a box-shaped accommodating portion, the accommodating portion being provided on the plurality of semiconductor units, the accommodating portion including an internal wiring and a rod-shaped external-connecting control terminal, the internal wiring being connected to each of the plurality of the unit-side control terminals extending from the plurality of semiconductor units, the external-connecting control terminal extending to the outside opposite to the semiconductor units, the external-connecting control terminal being connected to the internal wiring.

Abstract: Semiconductor equipment includes semiconductor modules sealed with a resin, each having first and second connection terminals exposed from the resin, a capacitor including third and fourth connection terminals, a cooler directly contacting the semiconductor modules and the capacitor, a busbar including a first busbar connecting the first connection terminal to the third connection terminal, a second busbar connecting the second connection terminal to the fourth connection terminal, and a first insulating layer sandwiched by the first and second busbars, main surfaces of the first and second busbars being parallel to each other, a control circuit board configured to control the semiconductor modules, and a heat transfer component including a main body connected to the cooler, and a second insulating layer arranged on the main body, the main body being in contact with the busbar and the control circuit via the second insulating layer.

Abstract: The semiconductor device includes a first conductive layer, semiconductor elements bonded to the upper surface of the first conductive layer, a second conductive layer separated from the first conductive layer, a control terminal bonded to the second conductive layer, a control resistor bonded to the upper surface of the second conductive layer, a control-resistor pin bonded to the upper surface of the control resistor and a wiring board having a control-wiring layer for electrically connecting the semiconductor elements and the control-resistor pin.

Abstract: A semiconductor device 100 includes a semiconductor element 12 having an electrode on a front surface, a wire 15 bonded to the electrode of the semiconductor element 12, a resin layer 22b covering a bonding portion of the wire 15 on the front surface of the semiconductor element 12, and a gel filler material 23 that seals the semiconductor element 12, the wire 15, and the resin layer 22b. By protecting the bonding portion of the wire 15 with the resin layer 22b, degradation of the wire 15 is ameliorated and the reliability of the semiconductor device 100 is improved.

Abstract: The semiconductor device includes a first conductive layer, semiconductor elements bonded to the upper surface of the first conductive layer, a second conductive layer separated from the first conductive layer, a control terminal bonded to the second conductive layer, a control resistor bonded to the upper surface of the second conductive layer, a control-resistor pin bonded to the upper surface of the control resistor and a wiring board having a control-wiring layer for electrically connecting the semiconductor elements and the control-resistor pin.