Patents by Inventor Motoki ETO
Motoki ETO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10950571Abstract: The present invention provides a bonding wire for a semiconductor device suitable for cutting-edge high-density LSIs and on-vehicle LSIs by improving the formation rate of Cu—Al IMC in ball bonds. A bonding wire for a semiconductor device contains Pt of 0.1 mass % to 1.3 mass %, at least one dopant selected from a first dopant group consisting of In, Ga, and Ge, for a total of 0.05 mass % to 1.25 mass %, and a balance being made up of Cu and incidental impurities.Type: GrantFiled: February 14, 2018Date of Patent: March 16, 2021Assignees: NIPPON STEEL CHEMICAL & MATERIAL CO., LTD., NIPPON MICROMETAL CORPORATIONInventors: Tetsuya Oyamada, Tomohiro Uno, Takashi Yamada, Daizo Oda, Motoki Eto
-
Publication number: 20200373226Abstract: Provided is a Pd coated Cu bonding wire for a semiconductor device capable of sufficiently obtaining bonding reliability of a ball bonded portion in a high temperature environment of 175° C. or more, even when the content of sulfur in the mold resin used in the semiconductor device package increases. The bonding wire for a semiconductor device comprises a Cu alloy core material; and a Pd coating layer formed on a surface of the Cu alloy core material; and contains 0.03 to 2% by mass in total of one or more elements selected from Ni, Rh, Ir and Pd in the bonding wire and further 0.002 to 3% by mass in total of one or more elements selected from Li, Sb, Fe, Cr, Co, Zn, Ca, Mg, Pt, Sc and Y. The bonding wire can be sufficiently obtained bonding reliability of a ball bonded portion in a high temperature environment of 175° C. or more, even when the content of sulfur in the mold resin used in the semiconductor device package increases by being used.Type: ApplicationFiled: December 28, 2017Publication date: November 26, 2020Inventors: Daizo ODA, Takashi YAMADA, Motoki ETO, Taruo HAIBARA, Tomohiro UNO
-
Publication number: 20200312808Abstract: In a copper alloy bonding wire for semiconductor devices, the bonding longevity of a ball bonded part under high-temperature and high-humidity environments is improved. The copper alloy bonding wire for semiconductor devices includes in total 0.03% by mass or more to 3% by mass or less of at least one or more kinds of elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt (first element), with the balance Cu and inevitable impurities. The inclusion of a predetermined amount of the first element suppresses production of an intermetallic compound susceptible to corrosion under high-temperature and high-humidity environments at the wire bonding interface and improves the bonding longevity of a ball bonded part.Type: ApplicationFiled: June 13, 2017Publication date: October 1, 2020Applicants: NIPPON MICROMETAL CORPORATION, NIPPON STEEL Chemical & Material Co., Ltd.Inventors: Daizo ODA, Takashi YAMADA, Motoki ETO, Teruo HAIBARA, Tomohiro UNO
-
Publication number: 20190326246Abstract: The present invention provides a bonding wire for a semiconductor device suitable for cutting-edge high-density LSIs and on-vehicle LSIs by improving the formation rate of Cu—Al IMC in ball bonds. A bonding wire for a semiconductor device contains Pt of 0.1 mass % to 1.3 mass %, at least one dopant selected from a first dopant group consisting of In, Ga, and Ge, for a total of 0.05 mass % to 1.25 mass %, and a balance being made up of Cu and incidental impurities.Type: ApplicationFiled: February 14, 2018Publication date: October 24, 2019Applicants: NIPPON STEEL CHEMICAL & MATERIAL CO., LTD., NIPPON MICROMETAL CORPORATIONInventors: Tetsuya OYAMADA, Tomohiro UNO, Takashi YAMADA, Daizo ODA, Motoki ETO
-
Patent number: 10121758Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 ?m. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.Type: GrantFiled: December 22, 2017Date of Patent: November 6, 2018Assignees: Nippon Micrometal Corporation, Nippon Steel & Sumikin Materials Co., Ltd.Inventors: Daizo Oda, Motoki Eto, Kazuyuki Saito, Teruo Haibara, Ryo Oishi, Takashi Yamada, Tomohiro Uno
-
Patent number: 10032741Abstract: There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices. The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains In of 0.011 to 1.2% by mass and has the Pd coating layer of a thickness of 0.015 to 0.150 ?m. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material contains one or more elements of Pt, Pd, Rh and Ni in an amount, for each element, of 0.05 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 175° C. or more.Type: GrantFiled: June 5, 2015Date of Patent: July 24, 2018Assignees: NIPPON MICROMETAL CORPORATION, NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.Inventors: Daizo Oda, Motoki Eto, Takashi Yamada, Teruo Haibara, Ryo Oishi, Tomohiro Uno, Tetsuya Oyamada
-
Publication number: 20180122765Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 ?m. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.Type: ApplicationFiled: December 22, 2017Publication date: May 3, 2018Inventors: Daizo ODA, Motoki ETO, Kazuyuki SAITO, Teruo HAIBARA, Ryo OISHI, Takashi YAMADA, Tomohiro UNO
-
Patent number: 9887172Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 ?m. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.Type: GrantFiled: September 17, 2015Date of Patent: February 6, 2018Assignees: NIPPON MICROMETAL CORPORATION, NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.Inventors: Daizo Oda, Motoki Eto, Kazuyuki Saito, Teruo Haibara, Ryo Oishi, Takashi Yamada, Tomohiro Uno
-
Publication number: 20170323864Abstract: There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices. The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains In of 0.011 to 1.2% by mass and has the Pd coating layer of a thickness of 0.015 to 0.150 ?m. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material contains one or more elements of Pt, Pd, Rh and Ni in an amount, for each element, of 0.05 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 175° C. or more.Type: ApplicationFiled: June 5, 2015Publication date: November 9, 2017Inventors: Daizo ODA, Motoki ETO, Takashi YAMADA, Teruo HAIBARA, Ryo OISHI, Tomohiro UNO, Tetsuya OYAMADA
-
Publication number: 20170194280Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 ?m. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.Type: ApplicationFiled: September 17, 2015Publication date: July 6, 2017Inventors: Daizo ODA, Motoki ETO, Kazuyuki SAITO, Teruo HAIBARA, Ryo OISHI, Takashi YAMADA, Tomohiro UNO