Abstract: The present invention relates to an information providing apparatus and an information providing apparatus. Images which are consecutive in time series are sequentially enlarged and displayed such that the enlarged images are continuous spirally in the time-series order from the inner circumferential side. In this manner, according to the present invention, it is possible to understand easily a before-after relationship between a large number of images which are consecutive in time series by applying the present invention to a set-top box for digital satellite broadcasting, for example.

Abstract: A method for manufacturing a semiconductor device includes the steps of preparing a semiconductor substrate, forming a lower electrode having a laminated film of Ir and IrO2 whose thickness is 100 nm or less over the semiconductor substrate, forming a capacity insulating film comprised of a metal oxide dielectric on the lower electrode, and forming an upper electrode comprised of a precious metal film on the capacity insulating film.

Abstract: A method of manufacturing a semiconductor device includes: forming a circuit element on a semiconductor substrate; forming a first insulation film on top to cover the circuit element; forming a first electrode on top; forming a ferroelectric film on the first electrode; forming a second electrode on the ferroelectric film; forming a mask film on the second electrode; etching the second electrode with the semiconductor substrate or a mounting electrode set to a first temperature using the mask film as a mask; etching the ferroelectric film with the semiconductor substrate or the mounting electrode set to a second temperature using the mask film as a mask, the second temperature being lower than the first temperature; and etching the first electrode with the semiconductor substrate or the mounting electrode set to a third temperature using the mask film as a mask, the third and first temperatures being approximately the same.

Abstract: With the objective of enabling a reduction in the size of a final semiconductor device and its thinning, and attaining facilitation of a manufacturing process, the semiconductor device includes a circuit chip having a flat mounted surface, a circuit chip smaller in size than the former circuit chip, and a sheet-like support. The latter circuit chip is formed over a substrate and has a flat back surface fixed to the substrate and a flat surface positioned on the side opposite to the back surface. The support is bonded to the surface of the latter circuit chip and supports the latter circuit chip. Then, the back surface of the latter circuit chip supported by the support is peeled from the substrate and pressed against the mounted surface, thereby fixing the back surface of the latter circuit chip and the mounted surface by an intermolecular bonding force (e.g., hydrogen bonding).

Abstract: A desired image is quickly retrieved from many images that have been stored. Reproduced images are horizontally arranged on time axis. Horizontal lines are displayed above the plurality of images. The horizontal lines are delimited every image group such that images that belong to the same image group are visually identified. Dots are displayed on individual lines corresponding to representative images P11 and P12 that belong to individual image groups. In addition, photographed dates and times are displayed only on representative images P11 and P21 that belong to image groups. A plurality of reproduced images are simultaneously displayed on an LCD 13. Among these reproduced images, representative images are identifiably displayed. When a desired image is selected from reproduced images, left and right feed buttons of a cross key 27 are pressed and representative images that belong to individual image groups are selected.

Abstract: A currently captured image R of an object is displayed nearly at a center portion of a display frame SC on a display screen ST1 that is a shooting mode. When a time dial 22 is rotated for one step in the counterclockwise direction, the currently captured image R is moved rightward. A reproduced image P1 captured before the currently captured image R is displayed on the left thereof. A reproduced image P2 captured before the reproduced image P1 is displayed on the left thereof. The currently captured image R and the reproduced images P1 and P2 are displayed at the same time on a display screen ST2 as a co-existent state of a shooting mode and a reproducing mode. When the time dial 22 is rotated for one step in the counterclockwise direction, only the reproduced images P1 to P4 are displayed on a display screen ST3 that is a reproducing mode. As a plurality of reproduced images, the reproduced images P1 to P4 are displayed along a time axis.

Abstract: A screen ST1 of an LCD with which a digital camera is provided displays an icon of a folder F1 indicating that the folder F1 has been selected. Image files P11 and P12 are captured reproduced images. A display frame SC displays a currently captured picture of an object, files P11 and P12, and the icon of the folder F1. To switch the folder F1 to a folder F2, the user presses a down button of a cross key 27. When the user presses the down button on the screen ST1, the screen ST1 is switched to a screen ST3 through a screen ST2. On the screen ST2, the number denoted in the icon is changed. The screen ST2 displays a state of which the folders are being switched. An icon displayed on the screen ST3 indicates that the folder F1 was switched to the folder F2.

Abstract: An image pickup device includes a display that displays one of image data including an operation menu or operation key image data representing operation keys; an external output section that outputs the image data including the operation menu to the outside; an output state detector that detects that the external output section is in a state capable of outputting the image data to the outside; a display data instruction section that instructs to display the operation key image data on the display and to display the image data including the operation menu on an external display device, which is an output destination of the image data in the external output section, when the external output section is detected to be in the capable state, and instructs to display the image data including the operation menu on the display when the external output section is not detected to be in the capable state; a display data supply that supplies one of the display or the external output section with one of the image data incl

Abstract: An SOI layer is formed on a substrate of a semiconductor device, and one or more elements are formed on the SOI layer. One or more grooves are formed in a substrate of the semiconductor device by removing part of the substrate. The groove is formed directly below an element for which dielectric loss caused by the substrate is assumed. Because silicon crystal constituting a dielectric is only present thinly at the groove or is completely absent therefrom, the dielectric loss of the element located above this groove is then very small. If this element is a constituent element of a high frequency circuit, the high frequency circuit thus displays high responsiveness and stability with respect to high frequency signal processing.

Abstract: A method for manufacturing a semiconductor device includes the steps of preparing a semiconductor substrate, forming a lower electrode having a laminated film of Ir and IrO2 whose thickness is 100 nm or less over the semiconductor substrate, forming a capacity insulating film comprised of a metal oxide dielectric on the lower electrode, and forming an upper electrode comprised of a precious metal film on the capacity insulating film.

Abstract: A method for manufacturing a ferroelectric capacitor having a lower electrode, a ferroelectric film, and an upper electrode stacked on one another comprises the steps of performing batch dry-etching thereto, processing and forming the upper electrode, the ferroelectric film, and lower electrode, performing a process for removing reactive products adhered to sidewall portions of the ferroelectric capacitor, cleaning the ferroelectric capacitor with concentrated sulfuric acid, and performing a process for passivating sidewall portions of the ferroelectric film.

Abstract: A method of manufacturing a semiconductor device includes: forming a circuit element on a semiconductor substrate; forming a first insulation film on top to cover the circuit element; forming a first electrode on top; forming a ferroelectric film on the first electrode; forming a second electrode on the ferroelectric film; forming a mask film on the second electrode; etching the second electrode with the semiconductor substrate or a mounting electrode set to a first temperature using the mask film as a mask; etching the ferroelectric film with the semiconductor substrate or the mounting electrode set to a second temperature using the mask film as a mask, the second temperature being lower than the first temperature; and etching the first electrode with the semiconductor substrate or the mounting electrode set to a third temperature using the mask film as a mask, the third and first temperatures being approximately the same.

Abstract: An information processing apparatus includes a first display controller, an icon-specifying device and a second display controller. The first display controller controls a display of first icons on a first hierarchical layer, second icons on a second hierarchical layer at a level lower than the first hierarchical layer, so as to exhibit an array of the first icons as a column or a row on a screen and an array of the second icons as another column or another row on the screen according to the size of a display area on the screen. The second display controller changes the array hierarchical structure displayed on the screen so as to display third icons to replace the second icons in the array hierarchical structure on the screen, and display the second icons to replace the first icons when one of the second icons in the array hierarchical structure is specified.

Abstract: The present invention relates to an information providing apparatus and an information providing apparatus. The display screen is switched to a predetermined display screen and receives processing on this predetermined display screen by operation of another operation key. Thus, in case where the present invention is applied to a set-top box for digital satellite broadcasting or the like to provide a large number of programs by various selection methods, the number of operation keys of a remote control device is prevented from being increased, so the operationality can be improved.

Abstract: The present invention aims to provide a method of manufacturing a semiconductor device having an SOI structure, which is capable of setting an etching process so as to cause contact etching to widely have a process margin even in a semiconductor elemental device using an extra-thin SOI layer. The present method is a method of manufacturing a fully depleted-SOI device. A cobalt layer is formed on an SOI layer. Cobalt is transformed into a cobalt silicide layer by heat treatment. An interlayer insulating film is formed on the cobalt silicide layer, and a contact hole is defined in the interlayer insulating film by dry etching. As an etching gas used in such a dry etching step, a CHF3/CO gas is used. An etching condition is set through the use of a dry etching rate held substantially constant by use of the etching gas. Described specifically, etching time is suitable set.

Abstract: A step for forming a wiring on a semiconductor substrate, a step for forming a first silicon oxide film on the semiconductor substrate having the wiring, and a step for forming an interlayer insulating film composed of a material bearing a low specific inductive capacity on the first silicon oxide film are sequentially executed to form a multilayered wiring. The interlayer insulating film is formed to have a smaller thickness relative to a step of the first silicon oxide film, so as not to extend beyond the step of the first silicon oxide film.

Abstract: An SOI layer is formed on a substrate of a semiconductor device, and one or more elements are formed on the SOI layer. One or more grooves are formed in a substrate of the semiconductor device by removing part of the substrate. The groove is formed directly below an element for which dielectric loss caused by the substrate is assumed. Because silicon crystal constituting a dielectric is only present thinly at the groove or is completely absent therefrom, the dielectric loss of the element located above this groove is then very small. If this element is a constituent element of a high frequency circuit, the high frequency circuit thus displays high responsiveness and stability with respect to high frequency signal processing.

Abstract: When a step for forming a wiring (2) on a semiconductor substrate (1), a step for forming a first silicon oxide film (4) on the semiconductor substrate (1) having the wiring (2), and a step for forming an interlayer insulting film (5) composed of a material bearing a low specific inductive capacity on the first silicon oxide film (4) are sequentially executed to form a multilayered wiring, the interlayer insulating film (5) is formed to a thin thickness corresponding to a step of the first silicon oxide film (4) so as not to extend beyond the step of the first silicon oxide film (4).

Abstract: The present invention aims to provide a method of manufacturing a semiconductor device having an SOI structure, which is capable of setting an etching process so as to cause contact etching to widely have a process margin even in a semiconductor elemental device using an extra-thin SOI layer. The present method is a method of manufacturing a fully depleted-SOI device. A cobalt layer is formed on an SOI layer. Cobalt is transformed into a cobalt silicide layer by heat treatment. An interlayer insulating film is formed on the cobalt silicide layer, and a contact hole is defined in the interlayer insulating film by dry etching. As an etching gas used in such a dry etching step, a CHF3/CO gas is used. An etching condition is set through the use of a dry etching rate held substantially constant by use of the etching gas. Described specifically, etching time is suitable set.

Abstract: A method for forming an isolation region on a semiconductor substrate with a high yield, comprising partially covering the surface of a semiconductor substrate with an oxidation inhibitor film, depositing a material for side-wall parts on the oxidation inhibitor film and also on an exposed region of the surface, which is revealed through an opening of the oxidation inhibitor film, to form side-wall parts at the edge portions of the oxidation inhibitor film, then, removing by a plasma etching process the unnecessary portions of said side-wall material deposited on the oxidation inhibitor film and on the exposed region of the substrate and leaving intact the side-wall parts at the edge portions of the oxidation inhibitor film, and cleaning the exposed region on the surface of the semiconductor substrate, revealed through the opening of the oxidation inhibitor film, before subsequent heat treatment to generate a field oxide film.