Abstract: A method for forming an isolation region on a semiconductor substrate with a high yield, comprising partially covering the surface of a semiconductor substrate with an oxidation inhibitor film, depositing a material for side-wall parts on the oxidation inhibitor film and also on an exposed region of the surface, which is revealed through an opening of the oxidation inhibitor film, to form side-wall parts at the edge portions of the oxidation inhibitor film, then, removing by a plasma etching process the unnecessary portions of said side-wall material deposited on the oxidation inhibitor film and on the exposed region of the substrate and leaving intact the side-wall parts at the edge portions of the oxidation inhibitor film, and cleaning the exposed region on the surface of the semiconductor substrate, revealed through the opening of the oxidation inhibitor film, before subsequent heat treatment to generate a field oxide film.

Abstract: A method for forming an isolation region on a semiconductor substrate with a high yield, comprising partially covering the surface of a semiconductor substrate with an oxidation inhibitor film, depositing a material for side-wall parts on the oxidation inhibitor film and also on an exposed region of the surface, which is revealed through an opening of the oxidation inhibitor film, to form side-wall parts at the edge portions of the oxidation inhibitor film, then, removing by a plasma etching process the unnecessary portions of said side-wall material deposited on the oxidation inhibitor film and on the exposed region of the substrate and leaving intact the side-wall parts at the edge portions of the oxidation inhibitor film, and cleaning the exposed region on the surface of the semiconductor substrate, revealed through the opening of the oxidation inhibitor film, before subsequent heat treatment to generate a field oxide film.

Abstract: A method for dry etching is disclosed which incorporates the steps of preparing a substrate having a metal film thereon in which aluminium is contained therein; generating a plasma by interacting a mixture gas consisting of a chloride gas, an oxygen gas and a nitrogen gas or a mixture of a chloride gas, a chlorine gas, an oxygen gas and a nitrogen gas with a microwave in a magnetic field, and etching the metal film in the plasma, whereby the metal film which contains aluminum can be etched without undercutting it and forming residues.

Abstract: In a method of fabricating a semiconductor device, a trench is formed on a semiconductor substrate on which a circuit element or electrode conductor is formed, and is filled with polysilicon, a planarizing material is applied with polyvinyl alcohol (PVA) aqueous solution onto the polysilicon to form a PVA film, and the entire surface of the semiconductor substrate is dry-etched with etching conditions that makes the ratio of the etching rate of the PVA film and the polysilicon film to be within the range of 1:1 to 1:2.