Abstract: A metallic laminate shaped flow path member has both a surface roughness of a flow path inner surface and corrosion resistance at such a level as to be utilizable as a flow path member for use in a supply line for a corrosive fluid in a semiconductor device manufacturing apparatus. A metallic substrate constituting the metallic laminate shaped flow path member has surface irregularities, the inner surface of the flow path of the metallic laminate shaped flow path member is formed with a glass coating layer in such a manner as to fill at least recessed regions of the surface irregularities of the metallic substrate, and the glass coating layer includes at least one of a layer of a P2O5—ZnO—Al2O3 based glass, a layer of a Bi2O3—ZnO—B2O3 based glass, and a layer of an SiO2—B2O3—Na2O based glass.

Abstract: A voltage nonlinear resistor according to the present invention includes a sintered body consisting essentially of zinc oxide and containing bismuth, antimony, and boron as accessory components. The accessory components are bismuth oxide of 1.5 to 2.5 mol %, antimony oxide of 1 to 2 mol %, and boron oxide of 0.3 mol % or less in terms of oxides.

Abstract: A semiconductor chip includes a semiconductor substrate made of SiC, a front surface electrode formed in a principal surface of the semiconductor substrate, and a rear surface electrode (drain electrode) formed in a rear surface of the semiconductor substrate. The front surface electrode is bonded to a wire, and includes an Al alloy film containing a high melting-point metal. The Al alloy film contains a columnar Al crystal which extends along a thickness direction of the Al alloy film, and an intermetallic compound is precipitated therein.

Abstract: A semiconductor chip includes a semiconductor substrate made of SiC, a front surface electrode formed in a principal surface of the semiconductor substrate, and a rear surface electrode (drain electrode) formed in a rear surface of the semiconductor substrate. The front surface electrode is bonded to a wire, and includes an Al alloy film containing a high melting-point metal. The Al alloy film contains a columnar Al crystal which extends along a thickness direction of the Al alloy film, and an intermetallic compound is precipitated therein.

Abstract: A voltage nonlinear resistor according to the present invention includes a sintered body consisting essentially of zinc oxide and containing bismuth, antimony, and boron as accessory components. The accessory components are bismuth oxide of 1.5 to 2.5 mol %, antimony oxide of 1 to 2 mol %, and boron oxide of 0.3 mol % or less in terms of oxides.

Abstract: An objective of the invention is to provide a method and system for separating a particular rare earth element from a rare earth magnet at a high separation ratio and by a simple process. There is provided a rare earth separation method for separating a first and a second groups of rare earth elements contained in a magnet, the method including: a starting powder preparation step from the magnet; a magnet component oxidation heat treatment step; a rare earth oxide separation step from the magnet components oxide powder; a powder size optimization step; a chlorinating agent mixing step; a chlorination/oxychlorination heat treatment step of forming a “first group rare earth chlorides”/“second group rare earth oxychlorides” mixture; a selective dissolution step of selectively dissolving the first group rare earth chlorides in the solvent and leaving the second group rare earth oxychlorides undissolved in solid phase form; and a solid-liquid separation step.

Abstract: A method for separating and recovering a plurality of rare-earth elements, the method including a step of introducing, into a liquid, a mixture containing a rare-earth oxychloride and a rare-earth chloride, the rare-earth oxychloride constituted from a rare-earth element different from a rare-earth element constituting the rare-earth chloride, thereby obtaining an insoluble matter containing the rare-earth oxychloride and a liquid in which the rare-earth chloride is dissolved, a step of recovering the rare-earth oxychloride from the insoluble matter, and a step of recovering the rare-earth chloride from the liquid in which the rare-earth chloride is dissolved.

Abstract: An objective of the invention is to provide a method and system for separating a particular rare earth element from a rare earth magnet at a high separation ratio and by a simple process. There is provided a rare earth separation method for separating a first and a second groups of rare earth elements contained in a magnet, the method including: a starting powder preparation step from the magnet; a magnet component oxidation heat treatment step; a rare earth oxide separation step from the magnet components oxide powder; a powder size optimization step; a chlorinating agent mixing step; a chlorination/oxychlorination heat treatment step of forming a “first group rare earth chlorides”/“second group rare earth oxychlorides” mixture; a selective dissolution step of selectively dissolving the first group rare earth chlorides in the solvent and leaving the second group rare earth oxychlorides undissolved in solid phase form; and a solid-liquid separation step.

Abstract: A method for separating and recovering a plurality of rare-earth elements, the method including a step of introducing, into a liquid, a mixture containing a rare-earth oxychloride and a rare-earth chloride, the rare-earth oxychloride constituted from a rare-earth element different from a rare-earth element constituting the rare-earth chloride, thereby obtaining an insoluble matter containing the rare-earth oxychloride and a liquid in which the rare-earth chloride is dissolved, a step of recovering the rare-earth oxychloride from the insoluble matter, and a step of recovering the rare-earth chloride from the liquid in which the rare-earth chloride is dissolved.

Abstract: In order to provide a semiconductor junction element consisted of an oxide semiconductor glass, which does not contain a toxic element and rare metal element, and various semiconductor devices using it, semiconductor glasses which contain vanadium oxide and have different polarities are connected each other in a semiconductor junction element of the present invention. Moreover, a semiconductor glass containing vanadium oxide is connected to an element semiconductor or a compound semiconductor which have different polarity from the semiconductor glass. Furthermore, a semiconductor glass containing vanadium oxide is connected to a metal.

Abstract: It is an object of the present invention to provide a spacer which has an adequate Young's modulus for a spacer used in an image display panel and allows free adjustment of an electric resistance value, and an image display panel using the spacer. The spacer SPC holds a gap between a back panel PNL1 including a signal line CL, a scanning line GL, and an electronic source ELS provided for the main surface of a back substrate SUB1, and a front panel PNL2 including a fluorescent material PH, a black matrix BM, and an anode AD provided for the main surface of a front substrate SUB2. The spacer comprises phosphate glass including the same transition metal element with different valences. For electrical conduction, the included same transition metal element with different valences allows the use of hopping conduction between transition metal atoms with different valences to perform adjustment of electric resistance relatively easily.

Abstract: A high-accuracy EGR sensor is provided. A recirculation system is provided which controls the flow rate of EGR by use of the sensor. A thermal gas flowmeter includes a heating resistor disposed in a flow of gas to be measured for detecting the flow rate of the gas, and an external circuit electrically connected to the heating resistor for outputting a signal according to the flow rate of the gas to be measured using the heating resistor. The heating resistor is controlled to be heated at a temperature equal to or higher than a vapor film forming temperature for forming a vapor film.

Abstract: The objects of the present invention are to provide a high-accuracy EGR sensor, and EGR system which adopts the above sensor to measure EGR rate. The gas flow meter comprises a sensor section for measuring fluid flow rate and controller for controlling signals transmitted into and out of the sensor section, and is controlled at a working temperature of 350 to 700° C., wherein a protective coat formed on the sensor section has resistance to temperature at which deposition of a PM component in exhaust gases can be prevented.

Abstract: An MIM electron source is comprised of a lower electrode, an insulation film and an upper electrode. By depositing a coat film on the upper electrode through a sputter process using a sputter target of alkaline glass having a modifier component of an alkaline metal oxide or alkaline earth metal oxide, the work function of the upper electrode can be lowered. As a result, the electron emission efficiency can be increased stably.

Abstract: The purpose of the present invention is to provide a plasma display panel containing black colored parts which have high resistant against degradation in blackness or peeling by high-temperature oxidation.

Abstract: A plasma display panel comprising a front substrate and a back substrate formed opposite each other and bonded to each other at the peripheries, electrodes formed on the front substrate, a dielectric layer formed on the electrodes, a protective layer formed on the dielectric layer, another electrode and another dielectric layer formed on the back substrate, barrier ribs to keep spaces between the front substrate and the back substrate, and fluorescent materials packed in the spaces formed by the barrier ribs, the front substrate, and the back substrate. The barrier ribs include glass at least containing oxide of tungsten, phosphorus, barium, and vanadium.

Abstract: To prevent sucking of a sealing material in steps of sealing and exhaust of a plasma display panel. The plasma display panel includes a front substrate and a rear substrate, in which the peripheries thereof are sealed by a glass sealing material. A sealing portion formed by the glass sealing material is formed of a multi-layered structure including at least two types of glass with different softening points. The entirety or part of the sealing portion on an inner side of the panel is formed of glass with the highest softening point. Since the high-temperature softened glass serves as a barrier for preventing sucking of the low-temperature softened glass into the panel, it is possible to prevent sucking of the sealing material into the panel. This can improve image display characteristics.

Abstract: To prevent occurrence of abnormal discharge which would reduce the quality of images in a PDP. At least one of an address electrode, a bus electrode, a bus main electrode, and a black electrode of a display electrode formed on a substrate is formed of metal particles and high-resistance glass to dissipate charge accumulated on a dielectric through the high-resistance glass and to prevent charging in a glass component itself, thereby reducing abnormal discharge. The high-resistance glass is preferably realized by vanadium phosphate glass containing vanadium, phosphorus, antimony, and barium. The metal particles desirably contain flaky particles.

Abstract: The purpose of the invention is to improve the mass productivity of display devices by using a glass substrate that prevents the degradation of an electrode caused by glass of the display device. The present invention provides a flat panel display device containing at least two substrates and a light emitting part provided between the two substrates, wherein at least one substrate of the two substrates contains SiO2 as a main component and contains 1% to 10% by weight of at least one type selected from the group consisting of La, Y, Gd, Yb, and Lu in terms of oxides, 5% to 25% by weight of R2O (R denotes one or more types selected from a group consisting of Li, K, Cs, and Rb), and 8% to 20% by weight of Al2O3, and wherein the surface electric resistance at 350° C. of the glass material is higher than 1×108 (?/square).

Abstract: The purpose of the present invention is to provide a spacer having a small absolute value of the temperature coefficient of resistance, the spacer being excellent in suppressing a thermal runaway, the spacer being excellent in voltage endurance so as not to cause an abnormal discharge even if a high voltage of over 10 kV is applied, the spacer being unlikely to cause deflection of an electron beam, and a flat panel display device provided with this spacer. The spacer of the flat panel display device includes, on the surface of a glass substrate, a thin film that comprises substances exhibiting metal-like electrical conductivity dispersed in an oxide matrix exhibiting semiconductor-like electrical conductivity.