Abstract: Here are disclosed a pellicle for EUV and an assembly made up of this pellicle and a mask, which brings about a projection of low contrast (intensity) shadows of a mesh structure on the mask, thus minimizing the adverse effect of the shadow on the lithographic printing; also a method for assembling such assembly is disclosed wherein the pellicle is rotated relative to the mask to minimize the shadow contrast, in terms of a contrast ratio, of the mesh structure; the angle of the rotation is 30 degrees or smaller, and the resultant contrast ratio should be 25% or lower.

Abstract: The present invention intends to provide silicon-containing particles that, when used as a negative electrode active material for a nonaqueous electrolyte secondary battery, can form a nonaqueous electrolyte secondary battery that is less in volume change during charge/discharge and has high initial efficiency and excellent cycle characteristics. The present invention provides silicon-containing particles that are used as a negative electrode active material for a nonaqueous electrolyte secondary battery and have a diffraction line with a peak at 2?=28.6° in X-ray diffractometry, a negative electrode material for a nonaqueous electrolyte secondary battery therewith, a nonaqueous electrolyte secondary battery, and a method of manufacturing the silicon-containing particles.

Abstract: A pellicle for EUV including a silicon film and a mesh work structure supporting the silicon film, and this pellicle is improved in that the grid frames of the mesh work structure are tapered in such a manner that the width of each grid frame lessens as the distance from the silicon film is increased.

Abstract: Here are disclosed a pellicle for EUV and an assembly made up of this pellicle and a mask, which brings about a projection of low contrast (intensity) shadows of a mesh structure on the mask, thus minimizing the adverse effect of the shadow on the lithographic printing; also a method for assembling such assembly is disclosed wherein the pellicle is rotated relative to the mask to minimize the shadow contrast, in terms of a contrast ratio, of the mesh structure; the angle of the rotation is 30 degrees or smaller, and the resultant contrast ratio should be 25% or lower.

Abstract: A pellicle for EUV including a silicon film and a mesh work structure supporting the silicon film, and this pellicle is improved in that the grid frames of the mesh work structure are tapered in such a manner that the width of each grid frame lessens as the distance from the silicon film is increased.

Abstract: The present invention intends to provide silicon-containing particles that, when used as a negative electrode active material for a nonaqueous electrolyte secondary battery, can form a nonaqueous electrolyte secondary battery that is less in volume change during charge/discharge and has high initial efficiency and excellent cycle characteristics. The present invention provides silicon-containing particles that are used as a negative electrode active material for a nonaqueous electrolyte secondary battery and have a diffraction line with a peak at 2?=28.6° in X-ray diffractometry, a negative electrode material for a nonaqueous electrolyte secondary battery therewith, a nonaqueous electrolyte secondary battery, and a method of manufacturing the silicon-containing particles.

Abstract: A titania-doped quartz glass containing 3-12 wt % of titania at a titania concentration gradient less than or equal to 0.01 wt %/?m and having an apparent transmittance to 440 nm wavelength light of at least 30% at a thickness of 6.35 mm is of such homogeneity that it provides a high surface accuracy as required for EUV lithographic members, typically EUV lithographic photomask substrates.

Abstract: The present invention provides a silicon manufacturing method for purifying silicon metal to manufacture solar cell silicon by reducing boron contained as impurities in the silicon metal. The present invention provides a silicon manufacturing method including preparing a mixture containing both silicon in a molten state and a molten salt, introducing a gas containing a chlorine atom into the mixture, and introducing moisture vapor together with the chlorine-atom containing gas. The chlorine-atom containing gas may preferably be a chlorine gas or silicon tetrachloride. The molten salt may preferably be composed of a mixture containing at least silicon dioxide and calcium oxide, and the mixture may additionally contain calcium fluoride.

Abstract: A method of solidifying metallic silicon, characterized by monodirectionally solidifying a metallic silicon of 800 ppm or less iron concentration. Any metal impurity components of the metallic silicon can be effectively removed with reduced cost through shortened steps.

Abstract: A titania-doped quartz glass containing 3-12 wt % of titania at a titania concentration gradient less than or equal to 0.01 wt %/?m and having an apparent transmittance to 440 nm wavelength light of at least 30% at a thickness of 6.35 mm is of such homogeneity that it provides a high surface accuracy as required for EUV lithographic members, typically EUV lithographic photomask substrates.

Abstract: A titania-doped quartz glass containing 3-12 wt % of titania at a titania concentration gradient less than or equal to 0.01 wt %/?m and having an apparent transmittance to 440 nm wavelength light of at least 30% at a thickness of 6.35 mm is of such homogeneity that it provides a high surface accuracy as required for EUV lithographic members, typically EUV lithographic photomask substrates.

Abstract: A titania-doped quartz glass containing 3-12 wt % of titania at a titania concentration gradient less than or equal to 0.01 wt %/?m and having an apparent transmittance to 440 nm wavelength light of at least 30% at a thickness of 6.35 mm is of such homogeneity that it provides a high surface accuracy as required for EUV lithographic members, typically EUV lithographic photomask substrates.

Abstract: Synthetic quartz glass is produced by feeding a silica-forming raw material gas, hydrogen gas, oxygen gas and a fluorine compound gas from a burner to a reaction zone, flame hydrolyzing the silica-forming raw material gas in the reaction zone to form fine particles of fluorine-containing silica, depositing the silica fine particles on a rotatable substrate in the reaction zone so as to create a fluorine-containing porous silica matrix, and heat vitrifying the porous silica matrix in a fluorine compound gas-containing atmosphere. This process enables the low-cost manufacture of a synthetic quartz glass having a higher and more uniform transmittance to light in the vacuum ultraviolet region than has hitherto been achieved.

Abstract: In a quartz glass, a mark is internally made such that a retardation generated in close proximity to the end of the mark is up to 20 nm. The internally marked quartz glass in which internal marks are created without sacrificing optical precision finds use as quartz glass substrates for optical members in the electronic industry.

Abstract: In a quartz glass, a mark is internally made such that a retardation generated in close proximity to the end of the mark is up to 20 nm. The internally marked quartz glass in which internal marks are created without sacrificing optical precision finds use as quartz glass substrates for optical members in the electronic industry.

Abstract: A fluorine-containing synthetic quartz glass article is produced by feeding a silica-forming reactant gas, hydrogen gas, oxygen gas, and optionally, a fluorine compound gas from a burner to a reaction zone, flame hydrolyzing the silica-forming reactant gas in the reaction zone to form fine particles of silica, depositing the silica particles on a rotatable substrate in the reaction zone to form a porous silica matrix, heating and vitrifying the porous silica matrix in a fluorine compound gas-containing atmosphere to form a synthetic quartz glass ingot, removing a surface portion from the ingot, and heating and molding the surface-removed ingot. The article is optically homogeneous as demonstrated by a high transmittance to vacuum UV light of less than 200 nm like ArF or F2 excimer laser light as well as a low birefringence and a small refractive index distribution.

Abstract: A process for manufacturing synthetic quartz glass involves feeding a quartz glass-forming raw material to a high-temperature gas zone within a chamber, converting the quartz glass-forming raw material into quartz soot, and forming synthetic quartz glass from the soot. A suspended soot-discharging gas which has been flow-straightened in a suspended soot discharging direction flows through the chamber in the vicinity of the high-temperature gas zone. This process keeps free suspended soot from settling onto the surface of the quartz ingot where fusion and growth take place, thereby preventing the formation of bubbles within the quartz glass under growth.

Abstract: Synthetic quartz glass is produced by feeding a silica-forming raw material gas, hydrogen gas, oxygen gas and a fluorine compound gas from a burner to a reaction zone, flame hydrolyzing the silica-forming raw material gas in the reaction zone to form fine particles of fluorine-containing silica, depositing the silica fine particles on a rotatable substrate in the reaction zone so as to create a fluorine-containing porous silica matrix, and heat vitrifying the porous silica matrix in a fluorine compound gas-containing atmosphere. This process enables the low-cost manufacture of a synthetic quartz glass having a higher and more uniform transmittance to light in the vacuum ultraviolet region than has hitherto been achieved.

Abstract: A polyhydroxystyrene having a 2,4-diamino-s-triazinyl group substituted for 1-50 mol % of its hydroxyl group and a weight average molecular weight of 3,000-50,000 is provided. A negative radiation-sensitive resist composition comprising the polymer, preferably along with a photo-acid generator and a crosslinking agent has high resolution and developability, affords a resist pattern of rectangular profile, and is shelf stable. The composition is thus very useful as resist material for LSI manufacture.

Abstract: A polyhydroxystyrene having a 2,4-diamino-s-triazinyl group substituted for 1-50 mol % of its hydroxyl group and a weight average molecular weight of 3,000-50,000 is provided. A negative radiation-sensitive resist composition comprising the polymer, preferably along with a photo-acid generator and a crosslinking agent has high resolution and developability, affords a resist pattern of rectangular profile, and is shelf stable. The composition is thus very useful as resist material for LSI manufacture.