Abstract: A white light emitting device is disclosed. The white light emitting device is composed by two light-emitting layers that emit light with wavelength ?1 and ?2 respectively. Then a first phosphor is used to absorb part of the two wavelength light and emit light having a wavelength of ?3. Or use a second phosphor to absorb part of the light with one of the two wavelength of the light-emitting layers and emit light with wavelength ?4. By mixing the light of the two light emitting layers with wavelength ?1 and ?2 with the light having a wavelength of ?3 individually, or further with the light with a wavelength of ?4, a white light is generated.

Abstract: A method for fabricating GaN-based LED is provided. The method first forms a first contact spreading metallic layer on top of the texturing surface of the p-type ohmic contact layer. The method then forms a second and a third contact spreading metallic layers on top of the first contact spreading layer. The p-type transparent metallic conductive layer composed of the three contact spreading metallic layers, after undergoing an alloying process within an oxygenic or nitrogenous environment under a high temperature, would have a superior conductivity. The p-type transparent metallic conductive layer could enhance the lateral contact uniformity between the p-type metallic electrode and the p-type ohmic contact layer, so as to avoid the localized light emission resulted from the uneven distribution of the second contact spreading metallic layer within the third contact spreading metallic layer. The GaN-based LED's working voltage and external quantum efficiency are also significantly improved.

Abstract: A GaN-based light-emitting device and the fabricating method for the same are described. The light-emitting device is a light-emitting body with a light extraction layer thereon. The light-emitting body has some GaN-based layers and is capable of emitting a light when energy is applied. The light extraction layer is a double layered structure having a current spreading layer and a micro-structure layer, or a single layered structure without the current spreading layer. The micro-structure layer is a TiN layer with a nano-net structure obtained by nitridation of a Ti layer or a Pt layer with metal clusters thereon obtained by annealing of a Pt layer.

Abstract: A flip-chip packaged SMD-type (surface-mount device) light emitting diode is provided. The light emitting diode chip is packaged in flip chip packages and is connected with an electrostatic protection device such as a transient voltage suppressor (TVS) or a Zener diode. The electrostatic protection device is attached with a substrate so as to form a flip-chip packaged SMD-type light emitting diode. The light emitting diode chip is connected to a lead frame of the substrate by a high electrical and heat conductive component thus the device needs no wire bonding. Due to the electrostatic protection device, the device has static control effect.

Abstract: This invention discloses a light emitting device that uses a light emitting diode (LED) to simultaneously emit two light sources of different wavelengths in combination with selected specific fluorescent materials to absorb one of the foregoing two lights source of different wavelengths and then generate a third light source of another different wavelength to form a white light spectrum by combining with the two different wavelengths of the light sources of the LED.

Abstract: An epitaxial stricture of a gallium nitride series semiconductor device and a process of forming the same are described. A first buffer layer of gallium nitride is epitaxially formed on a substrate at a first temperature. A second buffer layer of indium gallium nitride is formed on the first buffer layer at a second temperature. The second temperature increases up to a third temperature, during which precursors including In(CH3)3 and NH3 are used for surface treatment. A high-temperature gallium nitride is formed at the third temperature. The buffer layer and the way to form such a buffer layer allow improved crystal configuration and lowered defect density, thereby increasing the performance and service life of a semiconductor device.

Abstract: A light-emitting gallium nitride-based III-V group compound semiconductor device with enhanced brightness includes a substrate, a first-type conductive semiconductor layer, a light-emitting layer, a second-type conductive semiconductor layer, a transparent conductive layer, and two electrodes. During the manufacturing process of chips, a single or a pair of diamond scribing tool inclined in a certain angle is/are used, in combination with following breaking procedures, to make four sides of the chips of light emitting diode are trapezoid or parallelogram in the side view. Therefore, the external quantum efficiency of the light-emitting device is increased.

Abstract: A high light efficiency of GaN-series of light emitting diode and its manufacturing method thereof disclose a process and structure of a p-type semiconductor layer of surface texture structure generation. The optical waveguide effect can be interrupted and the possibility of hexagonal shaped pits defect generated can be reduced through said texture structure. The method explores that controlling the tension and compression of strain while a p-type cladding layer and a p-type transition layer are generated, and then a p-type ohmic contact is formed on said p-type transition layer. Through the control and its structure of said epitaxial growth process, the surface of said p-type semiconductor layer is with texture structure to increase external quantum efficiency and its operation life.

Abstract: A light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency that features on a substrate with concave and/or convex surface, a texturing surface layer, and a transparent conductive window layer. Therefore, the operating voltage is decreased and the efficiency of light extracting is improved.

Abstract: A light-emitting device of gallium nitride-based III-V group compound semiconductor includes a substrate, a texturing surface area arranged over the substrate; a n-type gallium nitride-based III-V group compound semiconductor layer having an ohmic contact area with texturing surface disposed over the substrate; a light-emitting layer arranged over the n-type gallium nitride-based III-V group compound semiconductor layer; a p-type gallium nitride-based III-V group compound semiconductor layer disposed over the light-emitting layer; a texturing surface layer covered over the p-type gallium nitride-based III-V group compound semiconductor layer; a transparent conductive oxide layer arranged over the texturing surface layer and establishing an ohmic contact with the texturing surface layer; a first electrode electrically coupling with the ohmic contact area with texturing surface of the n-type gallium nitride-based III-V group compound semiconductor layer; a second electrode electrically coupling with the transpa

Abstract: A gallium nitride (GaN) vertical light emitting diode (LED) structure and a method of separating a substrate and a thin film thereon in the GaN vertical LED are described. The structure has a metal reflective layer for reflecting light. The method provides a laser array over the substrate. A laser light emitted by the laser array is least partially be transparent to the substrate and its energy may be absorbed by the thin film. The thin film is irradiated through the substrate. The substrate is then separated from the thin film.

Abstract: A GaN-based light-emitting device and the fabricating method for the same are described. The light-emitting device is a light-emitting body with a light extraction layer thereon. The light-emitting body has some GaN-based layers and is capable of emitting a light when energy is applied. The light extraction layer is a double layered structure having a current spreading layer and a micro-structure layer, or a single layered structure without the current spreading layer. The micro-structure layer is a TiN layer with a nano-net structure obtained by nitridation of a Ti layer or a Pt layer with metal clusters thereon obtained by annealing of a Pt layer.

Abstract: A flip-chip packaged SMD-type (surface-mount device) light emitting diode is provided. The light emitting diode chip is packaged in flip chip packages and is connected with an electrostatic protection device such as a transient voltage suppressor (TVS) or a Zener diode. The electrostatic protection device is attached with a substrate so as to form a flip-chip packaged SMD-type light emitting diode. The light emitting diode chip is connected to a lead frame of the substrate by a high electrical and heat conductive component thus the device needs no wire bonding. Due to the electrostatic protection device, the device has static control effect.

Abstract: A white light emitting diode discloses a transparently conductive an adhesion layer combining the light emitting diode of GaN and ZnTe or ZnSe as the substrate of light transfer layer. While the light emitting diode of GaN emits a blue wavelength, the blue part is absorbed by the light transfer layer either in ZnTe or in ZnSe thereto emits another yellow wavelength. After the yellow light and the blue light mix together, the white light is produced.

Abstract: A GaN-based light-emitting device and the fabricating method for the same are described. The light-emitting device is a light-emitting body with a light extraction layer thereon. The light-emitting body has some GaN-based layers and is capable of emitting a light when energy is applied. The light extraction layer is a double layered structure having a current spreading layer and a micro-structure layer, or a single layered structure without the current spreading layer. The micro-structure layer is a TiN layer with a nano-net structure obtained by nitridation of a Ti layer or a Pt layer with metal clusters thereon obtained by annealing of a Pt layer.

Abstract: An epitaxial structure of a gallium nitride series semiconductor device and a process of forming the same are described. A first buffer layer of gallium nitride is epitaxially formed on a substrate at a first temperature. A second buffer layer of indium gallium nitride is formed on the first buffer layer at a second temperature. The second temperature increases up to a third temperature, during which precursors including In(CH3)3 and NH3 are used for surface treatment. A high-temperature gallium nitride is formed at the third temperature. The buffer layer and the way to form such a buffer layer allow improved crystal configuration and lowered defect density, thereby increasing the performance and service life of a semiconductor device.

Abstract: A vertical electrode structure of GaN-based light emitting diode discloses an oxide window layer constructing the GaN-based light emitting diode of vertical electrode structure, which effectively decreases the Fresnel reflection loss and total reflection, and further advances the luminous efficiency. Moreover, the further included metal reflecting layer causes the reflection without the selective angle of incidence, thus increasing the coverage of the reflecting angles and further reflecting the light emitted from a light emitting layer effectively. In addition, the invented structure can also advance the function of heat elimination and the electrostatic discharge (ESD) so as to the increase the operating life of the component and to be applicable to the using under the high current driving. Moreover, the vertical electrode structure of the present invention is able to lower down the manufacturing square of the chip and facilitate the post stage of the conventional wire bonding process.

Abstract: In a GaN-based light-emitting diode structure, a transparent conductive oxide layer is formed as a window layer on a GaN contact layer having a surface textured layer, and the textured layer acts as an ohmic contact layer with the transparent conductive oxide layer. Therefore, it is possible to reduce effectively the contact resistance and the working voltage, while the optical guiding effect is interrupted by the textured layer, to obtain thereby an enhancement of light extraction efficiency and thus an increase in the external quantum yield.