Patents by Inventor Mu-Shih YEH

Mu-Shih YEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fin field effect transistor (finFET) device structure with ultra-thin body and method for forming the same
    Patent number: 10361085
    Abstract: A method for forming a semiconductor device structure is provided that includes forming an oxide layer over a substrate and forming a semiconductor layer over the oxide layer. The method includes patterning the semiconductor layer to form a fin structure over the oxide layer and removing a portion of the fin structure to form a U-shaped trench in the fin structure. The method also includes forming a gate structure on the U-shaped trench.
    Type: Grant
    Filed: April 10, 2017
    Date of Patent: July 23, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Cheng-Chieh Lai, Kuang-Hsin Chen, Yung-Chun Wu, Mu-Shih Yeh
  • FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH ULTRA-THIN BODY AND METHOD FOR FORMING THE SAME
    Publication number: 20170213738
    Abstract: A method for forming a semiconductor device structure is provided that includes forming an oxide layer over a substrate and forming a semiconductor layer over the oxide layer. The method includes patterning the semiconductor layer to form a fin structure over the oxide layer and removing a portion of the fin structure to form a U-shaped trench in the fin structure. The method also includes forming a gate structure on the U-shaped trench.
    Type: Application
    Filed: April 10, 2017
    Publication date: July 27, 2017
    Inventors: Cheng-Chieh LAI, Kuang-Hsin CHEN, Yung-Chun WU, Mu-Shih YEH
  • Fin field effect transistor (FinFET) device structure with ultra-thin body and method for forming the same
    Patent number: 9620645
    Abstract: A FinFET device structure and method for forming the same is provided. The FinFET device structure includes an oxide layer formed over a substrate and a fin structure formed over the oxide layer. The fin structure is made of a semiconductor layer, and the semiconductor layer includes a first portion, a second portion and a third portion. The second portion is between the first portion and the third portion. The first portion, the second portion and the third portion construct a U-shaped trench, and the second portion is below the U-shaped trench. The FinFET device structure further includes a gate structure formed in the U-shaped trench.
    Type: Grant
    Filed: September 30, 2015
    Date of Patent: April 11, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Cheng-Chieh Lai, Kuang-Hsin Chen, Yung-Chun Wu, Mu-Shih Yeh
  • FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH ULTRA-THIN BODY AND METHOD FOR FORMING THE SAME
    Publication number: 20170092756
    Abstract: A FinFET device structure and method for forming the same is provided. The FinFET device structure includes an oxide layer formed over a substrate and a fin structure formed over the oxide layer. The fin structure is made of a semiconductor layer, and the semiconductor layer includes a first portion, a second portion and a third portion. The second portion is between the first portion and the third portion. The first portion, the second portion and the third portion construct a U-shaped trench, and the second portion is below the U-shaped trench. The FinFET device structure further includes a gate structure formed in the U-shaped trench.
    Type: Application
    Filed: September 30, 2015
    Publication date: March 30, 2017
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Cheng-Chieh LAI, Kuang-Hsin CHEN, Yung-Chun WU, Mu-Shih YEH